摘要:
Disclosed is a power semiconductor module having improved heat dissipation performance, including an anodized metal substrate including a metal plate, an anodized layer formed on a surface of the metal plate, and a circuit layer formed on the anodized layer on the metal plate, a power device connected to the circuit layer, and a housing mounted on the metal plate and for defining a sealing space which accommodates a resin sealing material for sealing the circuit layer and the power device.
摘要:
An actuator used in a safety stop device for an elevator has: a movable portion displaceable between an actuation position where the safety stop device for the elevator is actuated and a normal position where the actuation of the safety stop device is released; and an electromagnetic coil for displacing the movable portion when a current flows through the electromagnetic coil. A device for inspecting operation of the actuator has a feeder circuit for supplying an amount of electricity required for a semi-operation which is less than that required for a full operation for displacing the movable portion from the normal position and the actuation position to the electromagnetic coil.
摘要:
A switchgear apparatus is provided in which an impact induced by a close operation is mitigated, featuring space saving and high reliability with low costs.The switchgear apparatus includes a switching unit 3 that is composed of a fixed electrode 1 and a movable electrode 2; a movable shaft 4 that is extended from the movable electrode 2; an operating mechanism 5 that produces driving force and transfers the driving force to the movable shaft 4; a switching-unit holder 6 that holds the switching unit 3 and the movable shaft 4 thereinside; and a holder supporting unit 7 that has a fixing plane so as to fix the switching-unit holder 6 thereonto. The switchgear apparatus is arranged in such a manner that the holder supporting unit 7 serving as the fixing plane is constituted of a plurality of plates layered in the axial direction along the movable shaft 4. In a case of the close operation, because kinetic energy in the overall system is consumed by the friction generated between the layered plates owing to distortion of the layered plates, energy that allows the movable electrode 2 to bounce back and forth is lowered, so that it is possible to shorten a chattering time.
摘要:
A mobile terminal includes a wireless communication unit, a memory, a touch screen, and a controller. The wireless communication unit establishes a connection to an external digital picture frame. The memory stores a plurality of images including one or more characters and information mapped to the characters. The touch screen displays a first image stored in the memory. And, the controller transmits the first image and first information mapped to the first image to the digital picture frame via the wireless communication unit.
摘要:
Disclosed herein are a power module using sintering die attach and a manufacturing method of the same. The power module includes: a substrate having an insulating layer formed on a surface of a metal plate; a circuit layer formed on the substrate and including a wiring pattern and an electrode pattern; a device mounted on the wiring pattern; a sintering die attach layer applying a metal paste between the wiring pattern and the device and sintering the metal paste to bond the wiring pattern to the device; and a lead frame electrically connecting the device to the electrode pattern, whereby making it possible to simplify and facilitate the process, increase electrical efficiency and improve radiation characteristics, and manufacture firm and reliable power module.
摘要:
A nonvolatile memory device includes memory cell blocks each configured to comprise memory cells erased by an erase voltage, supplied to a word line, and a bulk voltage supplied to a bulk, a bias voltage generator configured to generate a first erase voltage, having a first pulse width and a first amplitude, in order to perform the erase operation of the memory cells and a second erase voltage, having a second pulse width narrower than the first pulse width and a second amplitude lower than the first amplitude, in order to perform an additional erase operation if an unerased memory cell is detected after the erase operation is performed, and a bulk voltage generator configured to generate the bulk voltage.
摘要:
A large scale memory array includes a uniform pattern of uniformly sized dummy bit cells and active bit cells. Sub-arrays within the large scale memory array are separated by the dummy bit cells. Signal distribution circuitry is formed with a width or height corresponding to the width or height of the dummy bit cells so that the signal distribution circuitry occupies the same footprint as the dummy bit cells without disrupting the uniform pattern across the large scale array. Edge dummy cells of a similar size or larger than the standard size bit cells may be placed around the edge of the large scale array to further reduce pattern loading affects.
摘要:
Resistance memory cells of MRAM arrays are designated as reference cells and programmed to binary 0 and binary 1 states, reference cells from one MRAM array at binary 0 and at binary 1 are concurrently accessed to obtain a reference voltage to read resistance memory cells of another MRAM array, reference cells from the other MRAM array at binary 0 and binary 1 are concurrently accessed to obtain a reference voltage to read resistance memory cells of the one MRAM array.
摘要:
A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
摘要:
Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.