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    Camptothecin compound containing stable 7-membered lactone ring, preparation method and use
    53.
    发明授权
    Camptothecin compound containing stable 7-membered lactone ring, preparation method and use 有权
    喜树碱化合物含有稳定的7元内酯环，制备方法和用途

    公开(公告)号：US09115150B2

    公开(公告)日：2015-08-25

    申请号：US14112583

    申请日：2012-04-13

    申请人： Wei Lv ,  Shanbao Yu ,  Yu Luo ,  Yi Chen ,  Jian Ding

    发明人： Wei Lv ,  Shanbao Yu ,  Yu Luo ,  Yi Chen ,  Jian Ding

    IPC分类号： C07D491/22

    CPC分类号： C07D491/22

    摘要： Provided are a camptothecin compound containing 7-membered lactone ring, as shown in general formula I, and pharmaceutically acceptable salt thereof, as well as the preparation method and use thereof. In general formula I, R1 is H, a C1˜C3 alkyl, acetyl or propionyl; R2 is H, a C1˜C6 alkyl, a C3˜C6 cycloalkyl, piperidyl; or a C1˜C6 alkyl substituted by an amino; R3 is H, a C1˜C3 alkyl, or a C1˜C6 alkyl substituted by an amino; R4 is H, a hydroxyl, or a C1˜C6 alkoxy; R5 is H, or a C1˜C6 alkoxyl; or R4 and R5 are linked to each other to form —OCH2O— or —OCH2CH2O—. The compound has good anti-tumor activity, and can be clinically used via oral administration, intravenous injection, and intramuscular injection, among others.

    摘要翻译： 提供了如通式I所示的含有7-元内酯环的喜树碱化合物及其药学上可接受的盐以及其制备方法和用途。 在通式I中，R 1是H，C 1 -C 3烷基，乙酰基或丙酰基; R2是H，C1〜C6烷基，C3〜C6环烷基，哌啶基; 或被氨基取代的C 1-6烷基; R3是H，C1〜C3烷基或被氨基取代的C1〜C6烷基; R4是H，羟基或C1〜C6烷氧基; R5是H或C1〜C6烷氧基; 或R 4和R 5彼此连接形成-OCH 2 O-或-OCH 2 CH 2 O-。 该化合物具有良好的抗肿瘤活性，可以通过口服给药，静脉内注射和肌内注射等临床使用。

    Camptothecin derivatives and their use
    54.
    发明授权
    Camptothecin derivatives and their use 有权
    喜树碱衍生物及其用途

    公开(公告)号：US08685997B2

    公开(公告)日：2014-04-01

    申请号：US12282397

    申请日：2007-01-17

    申请人： Wei Lu ,  Jian Ding ,  Heyong Gao ,  Liping Lin ,  Yi Chen

    发明人： Wei Lu ,  Jian Ding ,  Heyong Gao ,  Liping Lin ,  Yi Chen

    IPC分类号： A61K31/44 ,  C07D471/00

    CPC分类号： C07D491/22

    摘要： New camptothecin derivatives with the following structure of the formula (I), their use and the pharmaceutical compositions containing the same. The compounds of the present invention have good anti-tumor activities and good solubility in water, and can be used in development of medicines.

    摘要翻译： 具有以下结构式（I）的新的喜树碱衍生物，它们的用途和含有它们的药物组合物。 本发明化合物具有良好的抗肿瘤活性和在水中的良好溶解性，可用于药物的开发。

    Massager
    55.
    外观设计
    Massager 有权

    公开(公告)号：USD701614S1

    公开(公告)日：2014-03-25

    申请号：US29466913

    申请日：2013-09-12

    申请人： Jian Ding

    设计人： Jian Ding

    Triptolide derivatives and their uses
    58.
    发明授权
    Triptolide derivatives and their uses 有权
    雷公藤内酯衍生物及其用途

    公开(公告)号：US07626044B2

    公开(公告)日：2009-12-01

    申请号：US10540908

    申请日：2003-01-28

    申请人： Yuanchao Li ,  Jianping Zuo ,  Fan Zhang ,  Ru Zhou ,  Jian Ding

    发明人： Yuanchao Li ,  Jianping Zuo ,  Fan Zhang ,  Ru Zhou ,  Jian Ding

    IPC分类号： C07D307/77 ,  C07F9/06

    CPC分类号： C07D493/22 ,  A61K31/34

    摘要： Triptolide derivatives of Formula (I), their pharmaceutically acceptable salts and optical isomers, Formula (I): wherein, C5 and C6 are connect with each other by a C-C single bond or double bond; when C5 and C6 are connected with C-C single bond, X and Y represent independently hydrogen, oxygen, hydroxyl, halogen, lower alkyl-oxy, lower alkyl-amino, mercapto, lower alkyl-thio, the group of formula —OCOR, —OSO2OR or —OPO(OH)2, each of which is attached to C5 and C6, R represents —(CH2)nCO2Na, —(CO2)nCO2K, or —(CH2)nCH3, wherein n=1-6; Z represents hydrogen, oxygen, hydroxyl, halogen, lower alkyl-oxy, lower alkyl-amino, mercapto, lower alkyl-thio, the group of formula -OCOR, -OSO2OR or —OPO(OH)2, each of which is linked at C14-position, R represents —(CH2)nCO2Na, —(CO2)nCO2K, or —(CH2)nCH2, wherein n=1-6; wherein, the“______” linked with X, Y, and Z represents the stereochemistry orientations “” or “” , but X and Y cannot both be hydrogen atom at the same time, methods for preparing the triptolides and their use as antiphiogistic agent, immunosuppressive agent or therapeutic agent for other related diseases.

    摘要翻译： 式（I）的雷公藤内酯衍生物，其药学上可接受的盐和旋光异构体，式（I）：其中C5和C6通过C-C单键或双键相互连接; 当C5和C6与CC单键连接时，X和Y独立地表示氢，氧，羟基，卤素，低级烷基氧基，低级烷基 - 氨基，巯基，低级烷基 - 硫基，式-OCOR，-OSO2OR 或-OPO（OH）2，其各自连接到C5和C6，R表示 - （CH2）nCO2Na， - （CO2）nCO2K或 - （CH2）nCH3，其中n = 1-6; Z代表氢，氧，羟基，卤素，低级烷基 - 氧基，低级烷基 - 氨基，巯基，低级烷基 - 硫基，式-OCOR，-OSO2OR或-OPO（OH）2基团， C14-位，R表示 - （CH2）nCO2Na， - （CO2）nCO2K或 - （CH2）nCH2，其中n = 1-6; 其中，与X，Y和Z相连的“______”表示立体化学取向“”或“”，但X和Y不能同时为氢原子， 制备雷公藤内酯的方法及其作为抗氧化剂，免疫抑制剂或其他相关疾病的治疗剂的用途。

    In-situ integrated oxide etch process particularly useful for copper dual damascene
    59.
    发明授权
    In-situ integrated oxide etch process particularly useful for copper dual damascene 失效
    原位一体化氧化物蚀刻工艺特别适用于铜双镶嵌

    公开(公告)号：US06380096B2

    公开(公告)日：2002-04-30

    申请号：US09201590

    申请日：1998-11-30

    申请人： Hoiman Hung ,  Joseph P Caulfield ,  Sum-Yee Betty Tang ,  Jian Ding ,  Tianzong Xu

    发明人： Hoiman Hung ,  Joseph P Caulfield ,  Sum-Yee Betty Tang ,  Jian Ding ,  Tianzong Xu

    IPC分类号： H01L21302

    CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76808 ,  Y10S438/906 ,  Y10S438/954

    摘要： An integrated in situ oxide etch process particularly useful for a counterbore dual-damascene structure over copper having in one inter-layer dielectric level a lower nitride stop layer, a lower oxide dielectric, a lower nitride stop layer, an upper oxide dielectric layer, and an anti-reflective coating (ARC). The process is divided into a counterbore etch and a trench etch with photolithography for each, and each step is preferably performed in a high-density plasma reactor having an inductively coupled plasma source primarily generating the plasma and a capacitively coupled pedestal supporting the wafer and producing the bias power. The counterbore etch preferably includes at least four substeps of opening the ARC, etching through the upper oxide and nitride layers, selectively etching the lower oxide layer but stopping on the lower nitride layer, and a post-etch treatment for removing residue. The trench etch preferably includes the five substeps of opening the ARC, etching through the upper oxide layer but stopping on the upper nitride layers, a first post-etch treatment for removing residue, a nitride removal of the exposed portions of the upper and lower nitride layers, and a second post-etch treatment for remaining further residues. The oxide etches selective to nitride are accomplished using a fluorocarbon chemistry with high bias and a high temperature for a silicon-based scavenger for fluorine placed next to the plasma. The nitride etches and removal are accomplished by adding an oxygen-containing gas to a fluorocarbon. The final nitride removal is accomplished with very low bias power to increase selectivity to nitride and reduce sputtering of the underlying copper. The post-etch treatments are oxygen plasmas with zero bias power.

    摘要翻译： 一种集成的原位氧化物蚀刻工艺，特别适用于铜上的沉孔双镶嵌结构，具有一层间电介质层，一层较低的氮化物阻挡层，一层较低的氧化物介电层，一层较低的氮化物阻挡层， 抗反射涂层（ARC）。 该工艺分别用光刻法分为沉孔蚀刻和沟槽蚀刻，并且每个步骤优选在具有主要产生等离子体的电感耦合等离子体源的高密度等离子体反应器和支撑晶片的电容耦合基座并且产生 偏置力。 沉孔蚀刻优选包括打开ARC的至少四个子步骤，蚀刻通过上部氧化物和氮化物层，选择性地蚀刻低氧化物层但停止在下部氮化物层上，以及用于去除残留物的蚀刻后处理。 沟槽蚀刻优选包括打开ARC的五个子步骤，蚀刻穿过上部氧化物层但停止在上部氮化物层上，第一次蚀刻后处理以除去残余物，去除上部和下部氮化物的暴露部分的氮化物 层，以及用于剩余另外的残余物的第二次蚀刻后处理。 对氮化物的选择性的氧化物蚀刻是使用氟离子化学方法实现的，该化合物具有高偏压和高温，用于放置在等离子体旁边的用于氟的硅基清除剂。 通过向碳氟化合物中加入含氧气体来实现氮化物蚀刻和去除。 最终的氮化物去除通过非常低的偏置功率实现，以增加对氮化物的选择性并减少底层铜的溅射。 蚀刻后处理是具有零偏压功率的氧等离子体。

    High-density plasma etching of carbon-based low-k materials in a integrated circuit
    60.
    发明授权
    High-density plasma etching of carbon-based low-k materials in a integrated circuit 失效
    集成电路中碳基低k材料的高密度等离子体蚀刻

    公开(公告)号：US06284149B1

    公开(公告)日：2001-09-04

    申请号：US09156956

    申请日：1998-09-18

    申请人： Zongyu Li ,  Karsten Schneider ,  Axel Walter ,  Jian Ding

    发明人： Zongyu Li ,  Karsten Schneider ,  Axel Walter ,  Jian Ding

    IPC分类号： H01L21033

    CPC分类号： H01L21/7681 ,  H01J37/321 ,  H01J37/32706 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76807

    摘要： A plasma etching process for etching a carbon-based low-k dielectric layer in a multi-layer inter-level dielectric. The low-k dielectric may be divinyl siloxane-benzocyclobutene (BCB), which contains about 4% silicon, the remainder being carbon, hydrogen, and a little oxygen. The BCB etch uses an etching gas of oxygen, a fluorocarbon, and nitrogen and no argon. An N2/O2 ratio of between 1:1 and 3:1 produces vertical walls in the BCB. In a dual-damascene structure, the inter-level dielectric includes two BCB layers, each underlaid by a respective stop layer. Photolithography with an organic photoresist needs a hard mask of silicon oxide or nitride over the upper BCB layer. After the BCB etch has cleared all the photoresist, the bias power applied to the cathode supporting the wafer needs to be set to a low value while the separately controlled plasma source power is set reasonably high, thereby reducing faceting of the exposed hard mask. Chamber pressures of no more than 5 milliTorr increase the selectivity of BCB over photoresist. Substrate temperatures of less than 0° C. increase the BCB etch rate. A low fluorocarbon flow increases the etch rate, but a minimum amount of fluorocarbon is required for the silicon component of BCB. In a counterbore dual-damascene etch, the lower stop layer is composed of nitride, and the preferred fluorocarbon is difluoroethane (CH2F2). A silicon-free carbon-based low-k dielectric can be etched under similar chamber conditions with a etching gas of oxygen and nitrogen in about equal amounts but including no fluorocarbon nor argon.

    摘要翻译： 一种用于蚀刻多层级间电介质中的碳基低k电介质层的等离子体蚀刻工艺。 低k电介质可以是二乙烯基硅氧烷 - 苯并环丁烯（BCB），其含有约4％的硅，其余是碳，氢和少量的氧。 BCB蚀刻使用氧气，碳氟化合物和氮气的蚀刻气体，而不使用氩气。 在1：1和3：1之间的N2 / O2比率在BCB中产生垂直壁。 在双镶嵌结构中，层间电介质包括两个BCB层，每个BCB层由相应的停止层覆盖。 使用有机光致抗蚀剂的光刻法需要在上BCB层上的氧化硅或氮化物的硬掩模。 在BCB蚀刻已经清除了所有光致抗蚀剂之后，施加到支撑晶片的阴极的偏置功率需要被设置为低值，而单独控制的等离子体源功率被设置得相当高，从而减少了暴露的硬掩模的刻痕。 室压不超过5毫乇可提高BCB对光致抗蚀剂的选择性。 衬底温度小于0℃会增加BCB蚀刻速率。 低碳氟化合物流量增加了蚀刻速率，但BCB的硅组分需要最少量的碳氟化合物。 在沉孔双镶嵌蚀刻中，下停止层由氮化物组成，优选的碳氟化合物是二氟乙烷（CH 2 F 2）。 可以在类似的腔室条件下用大约相等量的氧和氮的蚀刻气体蚀刻无硅碳基低k电介质，但不包括氟碳和氩。