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    High-density plasma etching of carbon-based low-k materials in a integrated circuit
    1.
    发明授权
    High-density plasma etching of carbon-based low-k materials in a integrated circuit 失效
    集成电路中碳基低k材料的高密度等离子体蚀刻

    公开(公告)号：US06284149B1

    公开(公告)日：2001-09-04

    申请号：US09156956

    申请日：1998-09-18

    申请人： Zongyu Li ,  Karsten Schneider ,  Axel Walter ,  Jian Ding

    发明人： Zongyu Li ,  Karsten Schneider ,  Axel Walter ,  Jian Ding

    IPC分类号： H01L21033

    CPC分类号： H01L21/7681 ,  H01J37/321 ,  H01J37/32706 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76807

    摘要： A plasma etching process for etching a carbon-based low-k dielectric layer in a multi-layer inter-level dielectric. The low-k dielectric may be divinyl siloxane-benzocyclobutene (BCB), which contains about 4% silicon, the remainder being carbon, hydrogen, and a little oxygen. The BCB etch uses an etching gas of oxygen, a fluorocarbon, and nitrogen and no argon. An N2/O2 ratio of between 1:1 and 3:1 produces vertical walls in the BCB. In a dual-damascene structure, the inter-level dielectric includes two BCB layers, each underlaid by a respective stop layer. Photolithography with an organic photoresist needs a hard mask of silicon oxide or nitride over the upper BCB layer. After the BCB etch has cleared all the photoresist, the bias power applied to the cathode supporting the wafer needs to be set to a low value while the separately controlled plasma source power is set reasonably high, thereby reducing faceting of the exposed hard mask. Chamber pressures of no more than 5 milliTorr increase the selectivity of BCB over photoresist. Substrate temperatures of less than 0° C. increase the BCB etch rate. A low fluorocarbon flow increases the etch rate, but a minimum amount of fluorocarbon is required for the silicon component of BCB. In a counterbore dual-damascene etch, the lower stop layer is composed of nitride, and the preferred fluorocarbon is difluoroethane (CH2F2). A silicon-free carbon-based low-k dielectric can be etched under similar chamber conditions with a etching gas of oxygen and nitrogen in about equal amounts but including no fluorocarbon nor argon.

    摘要翻译： 一种用于蚀刻多层级间电介质中的碳基低k电介质层的等离子体蚀刻工艺。 低k电介质可以是二乙烯基硅氧烷 - 苯并环丁烯（BCB），其含有约4％的硅，其余是碳，氢和少量的氧。 BCB蚀刻使用氧气，碳氟化合物和氮气的蚀刻气体，而不使用氩气。 在1：1和3：1之间的N2 / O2比率在BCB中产生垂直壁。 在双镶嵌结构中，层间电介质包括两个BCB层，每个BCB层由相应的停止层覆盖。 使用有机光致抗蚀剂的光刻法需要在上BCB层上的氧化硅或氮化物的硬掩模。 在BCB蚀刻已经清除了所有光致抗蚀剂之后，施加到支撑晶片的阴极的偏置功率需要被设置为低值，而单独控制的等离子体源功率被设置得相当高，从而减少了暴露的硬掩模的刻痕。 室压不超过5毫乇可提高BCB对光致抗蚀剂的选择性。 衬底温度小于0℃会增加BCB蚀刻速率。 低碳氟化合物流量增加了蚀刻速率，但BCB的硅组分需要最少量的碳氟化合物。 在沉孔双镶嵌蚀刻中，下停止层由氮化物组成，优选的碳氟化合物是二氟乙烷（CH 2 F 2）。 可以在类似的腔室条件下用大约相等量的氧和氮的蚀刻气体蚀刻无硅碳基低k电介质，但不包括氟碳和氩。

    Etching an oxidized organo-silane film
    2.
    发明授权
    Etching an oxidized organo-silane film 失效
    蚀刻氧化有机硅烷膜

    公开(公告)号：US06168726A

    公开(公告)日：2001-01-02

    申请号：US09200086

    申请日：1998-11-25

    申请人： Zongyu Li ,  Jian Ding ,  Mehul Naik

    发明人： Zongyu Li ,  Jian Ding ,  Mehul Naik

    IPC分类号： B44C122

    CPC分类号： H01L21/76828 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76807

    摘要： A process for etching an oxidized organo-silane film exhibiting a low dielectric constant and having a most preferred atomic composition of 52% hydrogen, 8% carbon, 19% silicon, and 21% oxygen. The process of etching deep holes in the organo-silane film while stopping on a nitride or other non-oxide layer is preferably performed in an inductively coupled high-density plasma reactor with a main etching gas mixture of a fluorocarbon, such as C4F8, and argon while the pedestal electrode supporting the wafer is RF biased. For very deep and narrow holes, oxygen or nitrogen may be added to volatize carbon. In an integrated process in which an oxygen plasma is used either for the film etching or for post-etch treatments such as ashing or nitride removal, the oxygen plasma should be excited only when no RF bias is applied to the pedestal electrode, and thereafter the sample should be annealed in an inert environment to recover the low dielectric constant.

    摘要翻译： 具有低介电常数且具有52％氢，8％碳，19％硅和21％氧的最优选原子组成的氧化有机硅烷膜的方法。 在氮化物或其他非氧化物层上停止时蚀刻有机硅烷膜中的深孔的过程优选在具有碳氟化合物如C4F8的主蚀刻气体混合物的电感耦合高密度等离子体反应器中进行， 而支撑晶片的基座电极是RF偏置的。 对于非常深而窄的孔，可以加入氧气或氮气以挥发碳。 在其中使用氧等离子体用于薄膜蚀刻或蚀刻后处理如灰化或氮化物去除的整合方法中，只有当没有RF偏压施加到基座电极时，才应激发氧等离子体，此后， 样品应在惰性环境中退火以回收低介电常数。

    CAMPTOTHECIN COMPOUND CONTAINING STABLE 7-MEMBERED LACTONE RING, PREPARATION METHOD AND USE
    8.
    发明申请
    CAMPTOTHECIN COMPOUND CONTAINING STABLE 7-MEMBERED LACTONE RING, PREPARATION METHOD AND USE 有权
    包含稳定的7会员手环的化合物，制备方法和用途

    公开(公告)号：US20140128421A1

    公开(公告)日：2014-05-08

    申请号：US14112583

    申请日：2012-04-13

    申请人： Wei Lv ,  Shanbao Yu ,  Yu Luo ,  Yi Chen ,  Jian Ding

    发明人： Wei Lv ,  Shanbao Yu ,  Yu Luo ,  Yi Chen ,  Jian Ding

    IPC分类号： C07D491/22

    CPC分类号： C07D491/22

    摘要： Provided are a camptothecin compound containing 7-membered lactone ring, as shown in general formula I, and pharmaceutically acceptable salt thereof, as well as the preparation method and use thereof. In general formula I, R1 is H, a C1˜C3 alkyl, acetyl or propionyl; R2 is H, a C1˜C6 alkyl, a C3˜C6 cycloalkyl, piperidyl; or a C1˜C6 alkyl substituted by an amino; R3 is H, a C1˜C3 alkyl, or a C1˜C6 alkyl substituted by an amino; R4 is H, a hydroxyl, or a C1˜C6 alkoxy; R5 is H, or a C1˜C6 alkoxyl; or R4 and R5 are linked to each other to form —OCH2O— or —OCH2CH2O—. The compound has good anti-tumor activity, and can be clinically used via oral administration, intravenous injection, and intramuscular injection, among others.

    摘要翻译： 提供了如通式I所示的含有7-元内酯环的喜树碱化合物及其药学上可接受的盐以及其制备方法和用途。 在通式Ⅰ中，R 1是H，C 1 -C 3烷基，乙酰基或丙酰基; R2是H，C1〜C6烷基，C3〜C6环烷基，哌啶基; 或被氨基取代的C 1-6烷基; R3是H，C1〜C3烷基或被氨基取代的C1〜C6烷基; R4是H，羟基或C1〜C6烷氧基; R5是H或C1〜C6烷氧基; 或R 4和R 5彼此连接形成-OCH 2 O-或-OCH 2 CH 2 O-。 该化合物具有良好的抗肿瘤活性，可以通过口服给药，静脉内注射和肌内注射等临床使用。

    FLUIDICS DEVICE
    9.
    发明申请
    FLUIDICS DEVICE 有权
    流体装置

    公开(公告)号：US20120309644A1

    公开(公告)日：2012-12-06

    申请号：US13552356

    申请日：2012-07-18

    申请人： Lee O. Lomas ,  Jian Ding ,  Egisto Boschetti

    发明人： Lee O. Lomas ,  Jian Ding ,  Egisto Boschetti

    IPC分类号： C40B30/04 ,  G01N27/447 ,  B01D15/42 ,  F17D1/00

    CPC分类号： G01N30/461 ,  B01D15/325 ,  B01D15/362 ,  B01D15/363 ,  B01L3/5025 ,  B01L3/50255 ,  B01L3/563 ,  B01L2200/026 ,  B01L2200/028 ,  B01L2300/0681 ,  B01L2300/0829 ,  B01L2300/087 ,  B01L2400/0487 ,  C07K1/34 ,  G01N27/44704 ,  G01N27/44795 ,  G01N30/466 ,  G01N30/468 ,  Y10T137/2224 ,  Y10T137/794 ,  Y10T137/86187 ,  Y10T436/255

    摘要： The present invention contemplates various devices that are configured to separate a sample, which contains more than one unique species, into any desired number of sub-samples by passing the sample across a like number of separation media configured for a first separation protocol. Each of the sub-samples may be further separated by an additional separation protocol, thereby creating a plurality of mini-samples, each of which may be further separated and/or analyzed. The invention also contemplates using a simple method of using conduits to form a fluid path that passes through a plurality of separation media, each of which media is configured to isolate a particular sub-sample. After various sub-samples of the sample are isolated by the various separation media, the conduits may be removed, thereby enabling each of the isolated sub-samples to be further separated and/or analyzed independent of any other sub-sample.

    摘要翻译： 本发明考虑了通过将样品穿过配置用于第一分离方案的相似数量的分离介质，将被配置成将含有多于一种独特物种的样品分离成任何所需数量的子样品的各种装置。 每个子样品可以通过另外的分离方案进一步分离，从而产生多个微型样品，每个小样品可进一步分离和/或分析。 本发明还考虑使用简单的方法来使用导管来形成通过多个分离介质的流体路径，其中每个介质被配置为隔离特定的子样品。 在通过各种分离介质分离样品的各种亚样品之后，可以去除导管，从而使每个分离的子样品能够独立于任何其它亚样品进一步分离和/或分析。

    Process for etching a metal layer suitable for use in photomask fabrication
    10.
    发明授权
    Process for etching a metal layer suitable for use in photomask fabrication 有权
    用于蚀刻适用于光掩模制​​造的金属层的工艺

    公开(公告)号：US08202441B2

    公开(公告)日：2012-06-19

    申请号：US12728455

    申请日：2010-03-22

    申请人： Madhavi R. Chandrachood ,  Nicole Sandlin ,  Yung-Hee Yvette Lee ,  Jian Ding

    发明人： Madhavi R. Chandrachood ,  Nicole Sandlin ,  Yung-Hee Yvette Lee ,  Jian Ding

    IPC分类号： C03C15/00

    CPC分类号： C03C17/06 ,  C03C2217/26 ,  C03C2218/33 ,  C03C2218/34 ,  C23F4/00 ,  G03F1/54 ,  G03F1/80 ,  H01J37/321 ,  H01J2237/3341

    摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

    摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。