公开(公告)号：US06806546B2

公开(公告)日：2004-10-19

申请号：US10078234

申请日：2002-02-14

申请人： Harry Liu ,  Lonny Berg ,  William L Larson ,  Shaoping Li ,  Theodore Zhu ,  Joel Drewes

发明人： Harry Liu ,  Lonny Berg ,  William L Larson ,  Shaoping Li ,  Theodore Zhu ,  Joel Drewes

IPC分类号： H01L4300

CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/15 ,  H01L43/08 ,  H01L43/12

摘要： A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

公开(公告)号：US06760181B2

公开(公告)日：2004-07-06

申请号：US10021158

申请日：2001-12-13

申请人： Shaoping Li ,  Charles Potter ,  Wenzhong Zhu ,  Tom Rasmussen

发明人： Shaoping Li ,  Charles Potter ,  Wenzhong Zhu ,  Tom Rasmussen

IPC分类号： G11B2102

CPC分类号： G11B5/5552 ,  G11B5/4873

摘要： A microactuating suspension assembly used for a disc drive is disclosed. The microactuating suspension assembly has a suspension load beam and a microactuator placed on the suspension load beam for bending the suspension load beam at the front end thereof during a sustained period of data read/write time and thus achieving a desired average fly-height which is different from an unaltered average fly-height which would have been achieved without the microactuator. In particular, the microactuating suspension assembly can be used to achieve a very low fly-height. Additionally, very large bandwidth and very short seeking time is made possible when a bimorph piezoelectric microactuator is used.

摘要翻译： 公开了一种用于磁盘驱动器的微型制动悬架组件。 微型制动悬挂组件具有悬挂载荷梁和微型致动器，其放置在悬架载荷梁上，用于在持续的数据读/写时间期间在其前端弯曲悬架载荷梁，从而实现期望的平均飞行高度， 不同于没有微型致动器将实现的未改变的平均飞行高度。 特别地，微型制动悬挂组件可用于实现非常低的飞行高度。 此外，当使用双压电晶片压电微致动器时，可以实现非常大的带宽和非常短的寻道时间。

公开(公告)号：US06731473B2

公开(公告)日：2004-05-04

申请号：US09835246

申请日：2001-04-12

申请人： Shaoping Li ,  Charles Potter

发明人： Shaoping Li ,  Charles Potter

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3948 ,  G11B2005/3996 ,  Y10S977/934

摘要： This invention presents a method and system for fabricating a dual GMR read head, which possess a pseudo spin valve structure. The spin valve structure includes a first thick Co-alloy based reference layer with first and second surfaces. The structure includes a first spacer layer including a first surface contacting the first surface of the first thick Co-alloy layer and a second surface contacting a first surface of a first free layer. The structure also includes a second spacer layer including a first surface separated from the second surface of the first free layer and a second surface contacting a first surface of a second thick Co-alloy layer. The thickness of the first and second thick Co-based alloy can be approximately between 30 and 55 Å.

摘要翻译： 本发明提供了一种制造双重GMR读取头的方法和系统，其具有伪自旋阀结构。 自旋阀结构包括具有第一和第二表面的第一厚Co基合金基准参考层。 该结构包括第一间隔层，第一间隔层包括与第一厚Co合金层的第一表面接触的第一表面和与第一自由层的第一表面接触的第二表面。 该结构还包括第二间隔层，其包括与第一自由层的第二表面分离的第一表面和与第二厚Co合金层的第一表面接触的第二表面。 第一和第二厚Co基​​合金的厚度可以在大约30和55之间。

公开(公告)号：US06424564B1

公开(公告)日：2002-07-23

申请号：US09964217

申请日：2001-09-26

申请人： Shaoping Li ,  Theodore Zhu ,  Anthony S. Arrott ,  Harry Liu ,  William L. Larson ,  Yong Lu

发明人： Shaoping Li ,  Theodore Zhu ,  Anthony S. Arrott ,  Harry Liu ,  William L. Larson ,  Yong Lu

IPC分类号： G11C1100

摘要： MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

公开(公告)号：US06424561B1

公开(公告)日：2002-07-23

申请号：US09618504

申请日：2000-07-18

申请人： Shaoping Li ,  Theodore Zhu ,  Anthony S. Arrott ,  Harry Liu ,  William L. Larson ,  Yong Lu

发明人： Shaoping Li ,  Theodore Zhu ,  Anthony S. Arrott ,  Harry Liu ,  William L. Larson ,  Yong Lu

IPC分类号： G11C1100

CPC分类号： G11C11/16 ,  G11C11/15 ,  H01L27/222

摘要： MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

摘要翻译： 公开了在不显着降低存储器的封装密度的情况下产生增加的写入裕度和写入选择性的MRAM架构。 磁阻位的主轴相对于数字线的轴线偏移，以从沿着磁阻位的长轴延伸的数字线电流产生磁场分量。

公开(公告)号：US09432800B1

公开(公告)日：2016-08-30

申请号：US14680069

申请日：2015-04-07

申请人： Ge Yi ,  Jinwen Wang ,  Dujiang Wan ,  Shaoping Li

发明人： Ge Yi ,  Jinwen Wang ,  Dujiang Wan ,  Shaoping Li

IPC分类号： H04B5/00 ,  H04W4/00

CPC分类号： H04W4/008 ,  H04W4/80

摘要： A wireless magnetic field communication system working within the range of less than 1.5 m without induction induced interference during listening mode is proposed. The system comprises at least a transmitter and a receiver. Several novel transmitter designs using either active-connection-control solenoid or spin-orbit torque (SOT) based patterned thin film element(s) are proposed. The system has intrinsic high data security level due to its limited working range, as well as large data transfer rate. The system is suitable to establish a temporary off-the grid magnetic field communication network. It also provides a new data communication approach among modules instead of data cable in industry equipment. The system can be used as a standalone or built-in system for communication between devices or modularized components of a system.

摘要翻译： 提出了一种在小于1.5米的范围内工作的无线磁场通信系统，在听觉模式下没有感应干扰。 该系统至少包括发射机和接收机。 提出了使用有源连接控制螺线管或基于旋转轨道转矩（SOT）的图案化薄膜元件的几种新颖的发射机设计。 该系统由于其工作范围有限，数据传输速率大，因此具有内在的高数据安全级别。 该系统适合建立一个临时离网电磁场通信网络。 它还在模块之间提供了一种新的数据通信方式，而不是工业设备中的数据电缆。 该系统可用作独立或内置系统，用于系统的设备或模块化组件之间的通信。

公开(公告)号：US09293694B2

公开(公告)日：2016-03-22

申请号：US13288860

申请日：2011-11-03

申请人： Ge Yi ,  Shaoping Li ,  Dong Li ,  Yunjun Tang ,  Zongrong Liu

发明人： Ge Yi ,  Shaoping Li ,  Dong Li ,  Yunjun Tang ,  Zongrong Liu

IPC分类号： G11C11/00 ,  H01L43/08 ,  G11C11/16

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675

摘要： A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.

公开(公告)号：US09012265B2

公开(公告)日：2015-04-21

申请号：US13429440

申请日：2012-03-26

申请人： Ge Yi ,  Zongrong Liu ,  Yunjun Tang ,  Shaoping Li

发明人： Ge Yi ,  Zongrong Liu ,  Yunjun Tang ,  Shaoping Li

IPC分类号： H01L21/68 ,  H01L23/00

CPC分类号： H01L24/83 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/80 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05547 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/08146 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1162 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/80121 ,  H01L2224/80143 ,  H01L2224/80169 ,  H01L2224/80801 ,  H01L2224/81121 ,  H01L2224/81143 ,  H01L2224/81169 ,  H01L2224/81801 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/01078 ,  H01L2924/01024 ,  H01L2224/80 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00

摘要： A high-precision alignment method with high throughput is proposed, which can be used for wafer-to-wafer, chip-to-wafer or chip-to-chip bonding. The scheme implements pairing patterned magnets predetermined designed and made using wafer level process on two components (wafer or chip). The magnetization in patterned magnet can be set at predetermined configuration before bonding starts. When, the two components are bought to close proximity after a coarse alignment, the magnetic force will bring the magnet pairs together and aligned the patterned magnet on one component with its mirrored or complimentary patterned magnets on the other component to minimize the overall the magnetic energy of the pairing magnet. A few patterned magnet structures and materials, with their unique merits are proposed as examples for magnet pair for the self-alignment purpose. This method enables solid contact at the bonding interface via patterned magnets under the magnetic force, which avoid the wafer drafting due to the formation of the liquid phases.

摘要翻译： 提出了一种高精度的高通量对准方法，可用于晶圆到晶圆，晶片到晶圆或芯片间的接合。 该方案实现了使用晶片级处理在两个部件（晶片或芯片）上预先设计和制造的配对图案化磁体。 在接合开始之前，图案化磁体中的磁化可以被设定为预定的配置。 当两个部件在粗对准之后被购买成靠近时，磁力将使磁体对在一起，并将其上的图案化磁体与其另一部件上的镜像或互补的图案化磁体对准，以最小化整个磁能 的配对磁铁。 提出了一些具有独特优点的图案化磁体结构和材料作为用于自对准目的的磁体对的示例。 该方法能够在磁力下通过图案化的磁体在接合界面处实现牢固的接触，从而避免由于液相的形成引起的晶片牵伸。

公开(公告)号：US08797686B1

公开(公告)日：2014-08-05

申请号：US12978242

申请日：2010-12-23

申请人： Zhigang Bai ,  Peng Luo ,  Shaoping Li ,  Ut Tran

发明人： Zhigang Bai ,  Peng Luo ,  Shaoping Li ,  Ut Tran

IPC分类号： G11B5/31 ,  G11B5/23

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/232 ,  G11B5/235 ,  G11B5/3116 ,  G11B5/315

摘要： A magnetic recording transducer for use in a data storage device includes a writer pole with a ABS surface, trailing edge bevel and a trailing shield. The effective throat height of the writer main pole is reduced by the use two gap layers between the writer main pole and the trailing shield. A first gap layer is on and in contact with the writer pole trailing surface, and a second gap layer is on a section of the first gap layer on the writer pole trailing edge bevel, from a point removed from the ABS surface and absent from a part on a section of the first gap layer on the writer pole trailing edge bevel nearest the ABS. A method of fabricating the transducer is also provided.

摘要翻译： 用于数据存储装置的磁记录传感器包括具有ABS表面的写入极，后缘斜面和后屏蔽。 通过使用写主机和后盾之间的两个间隙层，减小了作者主极的有效喉部高度。 第一间隙层与写入器极后表面接触并接触，并且第二间隙层位于写入器极后缘斜面上的第一间隙层的一部分上，从从ABS表面移除的点不在 部分位于最靠近ABS的作者极后缘的第一间隙层的一部分。 还提供了制造换能器的方法。

公开(公告)号：US08599520B1

公开(公告)日：2013-12-03

申请号：US13332275

申请日：2011-12-20

申请人： Feng Liu ,  Laurence L. Chen ,  Yimin Guo ,  Amritpal S. Rana ,  Shaoping Li

发明人： Feng Liu ,  Laurence L. Chen ,  Yimin Guo ,  Amritpal S. Rana ,  Shaoping Li

IPC分类号： G11B5/127 ,  G11B5/39

CPC分类号： G11B5/398 ,  G01R33/09 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/3932

摘要： A method and system provide a magnetic read transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a second shield, and a read sensor between the first shield and the second shield. The read sensor extends along a stripe height direction perpendicular to the ABS. A first portion of the read sensor at the ABS has a first width in a track width direction parallel to the ABS. A second portion of the read sensor is recessed from the ABS along the stripe height direction and has a second width in the track width direction. The second width is greater than the first width.

摘要翻译： 一种方法和系统提供具有空气轴承表面（ABS）的磁读取换能器。 磁换能器包括在第一屏蔽和第二屏蔽之间的第一屏蔽，第二屏蔽和读取传感器。 读取传感器沿垂直于ABS的条带高度方向延伸。 ABS处的读取传感器的第一部分具有平行于ABS的轨道宽度方向上的第一宽度。 读取传感器的第二部分沿着条带高度方向从ABS凹入，并且在轨道宽度方向上具有第二宽度。 第二宽度大于第一宽度。