公开(公告)号：US20170115571A1

公开(公告)日：2017-04-27

申请号：US15401385

申请日：2017-01-09

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Keiyu OU ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/09 ,  G03F7/039 ,  G03F7/40 ,  G03F7/32 ,  G03F7/095 ,  G03F7/16 ,  G03F7/30 ,  G03F7/038 ,  G03F7/20

CPC classification number: G03F7/094 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/095 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/3085 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40

Abstract: A pattern forming method includes (A) a step of forming a first resist film on a substrate by using a first resist composition, (B) a step of exposing the first resist film, (C) a step of forming a first pattern by developing the exposed first resist film, (D) a step of forming a planarization layer on the substrate provided with the first pattern by using composition for forming a planarization layer (a), (E) a step of forming a second resist film on the planarization layer by using a second resist composition, (F) a step of exposing the second resist film, and (G) a step of forming a second pattern by developing the exposed second resist film in this order, in which the first pattern is insoluble in the composition for forming the planarization layer (a), and a method for manufacturing an electronic device using the pattern forming method.

公开(公告)号：US20170115569A1

公开(公告)日：2017-04-27

申请号：US15400491

申请日：2017-01-06

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Masafumi KOJIMA ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/039 ,  C08F220/18 ,  G03F7/16 ,  G03F7/40 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/004 ,  G03F7/09

CPC classification number: G03F7/0397 ,  C08F212/14 ,  C08F220/10 ,  C08F220/18 ,  C08F220/22 ,  C08F220/26 ,  C08F220/28 ,  C08F220/36 ,  C08F2220/1858 ,  C08F2220/282 ,  C08F2220/283 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/26 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274

Abstract: Provided are an active-light-sensitive or radiation-sensitive resin composition having high DOF and excellent LWR, a pattern forming method using the composition, and a method for manufacturing an electronic device. The composition is an active-light-sensitive or radiation-sensitive resin composition containing a resin (P), in which the resin (P) includes a repeating unit (a) having a group that decomposes by the action of an acid to generate a polar group, including at least a specific repeating unit (a1) represented by General Formula (1); a repeating unit (b1) having at least one of a lactone structure, a sultone structure, or a carbonate structure; and a repeating unit (b2) having at least one of a lactone structure, a sultone structure, or a carbonate structure, which is different from the repeating unit (b1), the Ohnishi parameter of the repeating unit (b1) is larger than the Ohnishi parameter of the repeating unit (b2), and the difference between both the Ohnishi parameters is 0.85 or more.

公开(公告)号：US20170059995A1

公开(公告)日：2017-03-02

申请号：US15350913

申请日：2016-11-14

Applicant: FUJIFILM Corporation

Inventor： Hajime FURUTANI ,  Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Masahiro YOSHIDOME ,  Masafumi KOJIMA

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/038

CPC classification number: G03F7/322 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2006 ,  G03F7/325

Abstract: A pattern forming method includes a pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition in which ΔDth represented by the following Formula (1) satisfies 0.8 or more (in the formula, Dth(PTI) represents the threshold deprotection rate of the acid-decomposable group with respect to the film thickness of the actinic ray-sensitive or radiation-sensitive film after development using the alkali developer, and Dth(NTI) represents the threshold deprotection rate of the acid-decomposable group with respect to the film thickness of the actinic ray-sensitive or radiation-sensitive film after development using the developer including an organic solvent). ΔDth=Dth(PTI)/Dth(NTI)  (1)

Abstract translation: 使用被配置为使得由式（1）表示的ΔDth为0.8以上的活性光敏性或辐射敏感性树脂组合物的图案形成方法。 ΔDth= Dth（PTI）/ Dth（NTI）（1）（在公式中，Dth（PTI）表示酸分解基团与显影后的有源光敏感或辐射敏感膜的膜厚度的阈值去保护率 碱性显影剂液体; Dth（NTI）表示使用含有有机溶剂的显影剂液体显影后的酸分解基团与活性的光敏感或感光性膜的膜厚度的阈值去保护比。）

公开(公告)号：US20160004157A1

公开(公告)日：2016-01-07

申请号：US14853574

申请日：2015-09-14

Applicant: FUJIFILM CORPORATION

Inventor： Junichi ITO ,  Akinori SHIBUYA ,  Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Fumihiro YOSHINO

IPC: G03F7/038 ,  G03F7/32 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/038 ,  C07C381/12 ,  C08F220/14 ,  C08F220/18 ,  C08F220/26 ,  C08F220/28 ,  C08F220/30 ,  C08F220/36 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274

Abstract: A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.

Abstract translation: 形成图案的方法包括（a）形成光化射线或辐射敏感性树脂组合物的膜，（b）将膜曝光，和（c）用包含有机溶剂的显影剂显影曝光的膜 从而形成负模式。 光化射线或辐射敏感性树脂组合物包括（A）当在含有有机溶剂的显影剂中的溶解度降低的树脂（A）作用于酸时，树脂含有具有通式（III）的内酯结构的重复单元 1）和（B）当暴露于光化射线或辐射时产生酸的化合物。

公开(公告)号：US20150331314A1

公开(公告)日：2015-11-19

申请号：US14811926

申请日：2015-07-29

Applicant: FUJIFILM CORPORATION

Inventor： Shuhei YAMAGUCHI ,  Takamitsu TOMIGA ,  Fumihiro YOSHINO ,  Hajime FURUTANI ,  Michihiro SHIRAKAWA ,  Mitsuhiro FUJITA

IPC: G03F7/004 ,  C07D409/02 ,  G03F7/32 ,  C07C311/48 ,  G03F7/038 ,  G03F7/20

CPC classification number: G03F7/0045 ,  C07C311/48 ,  C07C381/12 ,  C07C2601/16 ,  C07D409/02 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/325

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a group capable of decomposing by an action of an acid to produce a polar group, (C1) a compound containing a group capable of generating a first acidic functional group upon irradiation with an actinic ray or radiation and a group capable of generating a second acidic functional group different from the first acidic functional group upon irradiation with an actinic ray or radiation, and (C2) at least one compound containing two or more groups selected from the group consisting of the groups capable of generating the structures represented by the specific formulae upon irradiation with an actinic ray or radiation.

Abstract translation: 提供了一种光化射线敏感性或辐射敏感性树脂组合物，其包含：（A）具有能够通过酸的作用分解以产生极性基团的基团的树脂，（C1）含有能够产生的基团的化合物 通过光化射线或辐射照射后的第一酸性官能团和能够产生与光化射线或辐射照射时不同于第一酸性官能团的第二酸性官能团的基团，和（C2）至少一种含有两个 或更多选自由能够产生由光化射线或辐射照射的特定化学式表示的结构的基团组成的组。

公开(公告)号：US20140141360A1

公开(公告)日：2014-05-22

申请号：US14164389

申请日：2014-01-27

Applicant: FUJIFILM Corporation

Inventor： Shuhei YAMAGUCHI ,  Hidenori TAKAHASHI ,  Michihiro SHIRAKAWA ,  Fumihiro YOSHINO

IPC: G03F7/038

CPC classification number: G03F7/0382 ,  C08F20/10 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

Abstract: A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit represented by the following formula (I) or (II) as defined in the specification in an amount of 20 mol % or more based on all repeating units in the resin (P) and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, so as to form an exposed film; and (iii) a step of developing the exposed film by using a developer containing an organic solvent to form a negative pattern.

Abstract translation: 图案形成方法包括：（i）从含有（P）具有（a1）由下式（I）表示的重复单元的树脂或（a1）由下式（I）表示的重复单元的树脂的光化射线敏感性或辐射敏感性树脂组合物形成膜的步骤， （II），基于树脂（P）中的所有重复单元为20摩尔％以上，（B）在光化射线或辐射照射时能够产生酸的化合物; （ii）曝光胶片的步骤，以形成曝光胶片; 和（iii）通过使用包含有机溶剂的显影剂形成负图案来显影所述曝光的薄膜的步骤。

公开(公告)号：US20240427243A1

公开(公告)日：2024-12-26

申请号：US18827449

申请日：2024-09-06

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Satomi TAKAHASHI

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: It is an object of the present invention to provide an actinic ray-sensitive or radiation-sensitive resin composition capable of forming a pattern with high LWR performance, a resist film, a pattern forming method, a method for producing an electronic device, and an electronic device. An actinic ray-sensitive or radiation-sensitive resin composition according to the present invention includes a resin that includes a repeating unit represented by a formula (Ia) and a repeating unit represented by a formula (IIa) and has a main chain that is cleaved by exposure, and an ionic compound represented by a formula (III), and the resin satisfies a requirement 1 and a requirement 2.

公开(公告)号：US20240248397A1

公开(公告)日：2024-07-25

申请号：US18610965

申请日：2024-03-20

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0045 ,  G03F7/038 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/325

Abstract: An object of the present invention to provide an actinic ray-sensitive or radiation-sensitive resin composition that has high preservation stability and is characterized in that when etching treatment is performed using a resist pattern formed from the resist composition as a mask, defects are less likely to occur in a pattern formed. Another object of the present invention is to provide a method for producing a resist pattern.
An actinic ray-sensitive or radiation-sensitive resin composition according to the present invention contains a resin that becomes more polar under the action of acid, a photoacid generator, a compound Y that is at least one selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2), and a metal atom. The mass ratio of the content of the compound Y to the content of the metal atom is 1.0×10 to 1.0×109.

公开(公告)号：US20210011380A1

公开(公告)日：2021-01-14

申请号：US17036576

申请日：2020-09-29

Applicant: FUJIFILM Corporation

Inventor： Wataru NIHASHI ,  Michihiro SHIRAKAWA ,  Michihiro OGAWA

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).

公开(公告)号：US20210011377A1

公开(公告)日：2021-01-14

申请号：US17035746

申请日：2020-09-29

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Hajime FURUTANI ,  Hironori OKA

IPC: G03F7/004 ,  G03F7/20 ,  C08L101/04 ,  G03F7/32

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[0]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[0]×16+[F]×19+[S]×32+[I]×127)  Formula (1): Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.