公开(公告)号：US20050068672A1

公开(公告)日：2005-03-31

申请号：US10631579

申请日：2003-07-30

申请人： Kim Lee ,  Chun-Ming Wang

发明人： Kim Lee ,  Chun-Ming Wang

IPC分类号： G11B5/147 ,  G11B5/31 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/461

CPC分类号： G11B5/3163 ,  H01L21/0272 ,  Y10T29/49021

摘要： A method is invented for processing a thin-film head/semiconductor wafer. A layer of polymer is applied onto a wafer. A layer of dielectric material is added above the polymer layer. A layer of photoresist is added above the dielectric layer. The photoresist layer is patterned using a photolithography process. Exposed portions of the dielectric layer are removed. Exposed portions of the polymer layer are removed. Exposed portions of the wafer are removed. The polymer layer and any material thereabove is removed after hard bias/leads deposition.

摘要翻译： 发明了一种用于处理薄膜头/半导体晶片的方法。 将一层聚合物施加到晶片上。 在聚合物层之上添加介电材料层。 在介电层上方添加一层光致抗蚀剂。 使用光刻工艺对光致抗蚀剂层进行图案化。 除去介电层的露出部分。 去除聚合物层的暴露部分。 去除晶片的暴露部分。 在硬偏压/引线沉积之后，去除聚合物层和其上的任何材料。

公开(公告)号：US06261727B1

公开(公告)日：2001-07-17

申请号：US09473030

申请日：1999-12-28

申请人： Chun-Ming Wang

发明人： Chun-Ming Wang

IPC分类号： G03F900

CPC分类号： G03F7/701 ,  G03F7/70308

摘要： A process and apparatus are described for a projection system having improved depth of focus. This has been achieved by introducing into a standard projection system, of the type suitable for photolithography, both a quadrupole mask in the pupil plane of the illuminator lens and a phase-type filter in the pupil plane of the projection lens. Detailed data for the design of both these filters is provided. If these guidelines are followed the result is a projection system whose depth of focus has been increased to a sufficient degree to allow the formation, in a single exposure, of a photoresist wafer suitable for simultaneously etching both isolated and densely packed contact holes.

摘要翻译： 对于具有改善的焦深的投影系统描述了一种处理和装置。 这已经通过引入适合于光刻的类型的标准投影系统，在照明器透镜的光瞳平面中的四极掩模和投影透镜的光瞳平面中的相位滤光器来实现。 提供了这两个滤波器设计的详细数据。 如果遵循这些指导原则，结果就是一个投影系统，其深度的焦点已经提高到一个足够的程度，允许在一次曝光中形成适合于同时蚀刻隔离和密集接触孔的光刻胶晶片。

公开(公告)号：US08313992B2

公开(公告)日：2012-11-20

申请号：US12897257

申请日：2010-10-04

申请人： Chen-Che Huang ,  Chun-Ming Wang ,  Masaaki Higashitani

发明人： Chen-Che Huang ,  Chun-Ming Wang ,  Masaaki Higashitani

IPC分类号： H01L21/336 ,  H01L21/8234 ,  G03F1/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： G03F1/36

摘要： A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.

摘要翻译： 光刻掩模包括形成在掩模基板上的多个图案化特征以及基本上垂直于掩模基板上的图案化特征形成的第一多个次分辨率辅助特征（SRAF）。

公开(公告)号：US20120258387A1

公开(公告)日：2012-10-11

申请号：US13081268

申请日：2011-04-06

申请人： Chun-Ming Wang ,  Chenche Huang ,  Masaaki Higashitani

发明人： Chun-Ming Wang ,  Chenche Huang ,  Masaaki Higashitani

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F7/70433 ,  G03F1/26 ,  G03F1/32 ,  G03F1/36 ,  G03F7/70091

摘要： A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Also a photolithography method that includes a step of providing a substantially opaque mask having N stepped rows of offset, substantially transparent, rectangular mask features, where N is an integer and N≧2. The method also includes illuminating a photoresist layer located over an underlying material with dipole illumination through the substantially transparent, rectangular mask features in the substantially opaque mask to form 2N rows of exposed regions in the photoresist layer. The exposed regions have a substantially elliptical or substantially circular shape when viewed from above the photoresist layer.

摘要翻译： 一种包括多个掩模特征的光刻掩模。 相邻的掩模特征由间隙分隔开并且彼此偏移，使得各个掩模特征具有单侧致密部分和两侧致密部分。 还有一种光刻方法，其包括提供具有偏移的，基本上透明的矩形掩模特征的N个阶梯行的基本不透明掩模的步骤，其中N是整数，N≥2。 该方法还包括通过偶极照明通过基本上不透明掩模中的基本上透明的矩形掩模特征照亮位于下层材料上的光致抗蚀剂层，以在光致抗蚀剂层中形成2N排暴露区域。 当从光致抗蚀剂层的上方观察时，暴露区域具有基本上椭圆形或大致圆形形状。

公开(公告)号：US08221943B2

公开(公告)日：2012-07-17

申请号：US12729088

申请日：2010-03-22

申请人： Chun-Ming Wang ,  Chen-Che Huang ,  Masaaki Higashitani

发明人： Chun-Ming Wang ,  Chen-Che Huang ,  Masaaki Higashitani

IPC分类号： G03F1/36 ,  G03C5/00

CPC分类号： G03F1/36

摘要： A photomask for exposure of a semiconductor wafer using dipole illumination and method of manufacturing the same is disclosed. A method of forming a pattern on a semiconductor using the photomask is also disclosed. The photomask may have an array of islands that are used for printing lines using dipole illumination. The photomask may have sub-resolution assist features (SRAF) to assist in printing the lines. The SRAF may include an array of holes.

摘要翻译： 公开了一种用于使用偶极照明曝光半导体晶片的光掩模及其制造方法。 还公开了使用光掩模在半导体上形成图案的方法。 光掩模可以具有用于使用偶极照明打印线的岛阵列。 光掩模可以具有辅助分辨率辅助特征（SRAF）以帮助印刷线。 SRAF可以包括一组孔。

公开(公告)号：US08218229B2

公开(公告)日：2012-07-10

申请号：US12711634

申请日：2010-02-24

申请人： Teruo Sasagawa ,  Clarence Chui ,  Manish Kothari ,  SuryaPrakash Ganti ,  Jeffrey B. Sampsell ,  Chun-Ming Wang

发明人： Teruo Sasagawa ,  Clarence Chui ,  Manish Kothari ,  SuryaPrakash Ganti ,  Jeffrey B. Sampsell ,  Chun-Ming Wang

IPC分类号： G02B26/00 ,  G02B26/08

CPC分类号： G02B26/0841 ,  B81B2201/042 ,  B81B2203/0307 ,  B81C1/00595 ,  B81C2201/014 ,  G02B26/001

摘要： A microelectromechanical systems device having support structures formed of sacrificial material surrounded by a protective material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a sacrificial material.

摘要翻译： 具有由保护材料围绕的牺牲材料形成的支撑结构的微机电系统装置。 微机电系统装置包括其上形成有电极的基板。 另一电极通过空腔与第一电极分离，并形成可移动层，该可移动层由牺牲材料形成的支撑结构支撑。

公开(公告)号：US20110199667A1

公开(公告)日：2011-08-18

申请号：US13092827

申请日：2011-04-22

申请人： Chun-Ming Wang ,  Ming-Hau Tung ,  Surya Prakash Ganti

发明人： Chun-Ming Wang ,  Ming-Hau Tung ,  Surya Prakash Ganti

IPC分类号： G02B26/02 ,  G02F1/13357

CPC分类号： G02B26/001

摘要： Methods and apparatus for providing lighting in a display are provided. In one embodiment, a microelectromechanical system (MEMS) is provided that includes a transparent substrate and a plurality of interferometric modulators. The interferometric modulators include an optical stack coupled to the transparent substrate, a reflective layer over the optical stack, and one or more posts to support the reflective layer and to provide a path for light from a backlight for lighting the display.

摘要翻译： 提供了用于在显示器中提供照明的方法和装置。 在一个实施例中，提供了包括透明基板和多个干涉式调制器的微机电系统（MEMS）。 干涉式调制器包括耦合到透明衬底的光学叠层，光学叠层上的反射层，以及支撑反射层的一个或多个柱，以及为来自背光源的光提供用于点亮显示器的路径。

公开(公告)号：US07835093B2

公开(公告)日：2010-11-16

申请号：US12702132

申请日：2010-02-08

申请人： Chun-Ming Wang

发明人： Chun-Ming Wang

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

摘要： Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

摘要翻译： 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US07795061B2

公开(公告)日：2010-09-14

申请号：US11321134

申请日：2005-12-29

申请人： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

发明人： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

IPC分类号： H01L21/00

CPC分类号： B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

摘要： MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

摘要翻译： 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

公开(公告)号：US07781269B2

公开(公告)日：2010-08-24

申请号：US12216109

申请日：2008-06-30

申请人： Chun-Ming Wang ,  Yung-Tin Chen ,  Roy E. Scheuerlein

发明人： Chun-Ming Wang ,  Yung-Tin Chen ,  Roy E. Scheuerlein

IPC分类号： H01L21/82

CPC分类号： H01L27/101 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32139 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： A method of making a semiconductor device includes forming at least one device layer over a substrate, forming a plurality of spaced apart first features over the device layer, where each three adjacent first features form an equilateral triangle, forming sidewall spacers on the first features, filling a space between the sidewall spacers with a plurality of filler features, selectively removing the sidewall spacers, and etching the at least one device layer using at least the plurality of filler features as a mask. A device contains a plurality of bottom electrodes located over a substrate, a plurality of spaced apart pillars over the plurality of bottom electrodes, and a plurality of upper electrodes contacting the plurality of pillars. Each three adjacent pillars form an equilateral triangle, and each pillar comprises a semiconductor device. The plurality of pillars include a plurality of first pillars having a first shape and a plurality of second pillars having a second shape different from the first shape.

摘要翻译： 制造半导体器件的方法包括在衬底上形成至少一个器件层，在器件层上形成多个间隔开的第一特征，其中每三个相邻的第一特征形成等边三角形，在第一特征上形成侧壁间隔物， 用多个填料特征填充侧壁间隔件之间的空间，选择性地去除侧壁间隔物，以及使用至少多个填料特征作为掩模蚀刻至少一个器件层。 一种器件包含位于衬底上方的多个底部电极，多个底部电极上的多个间隔开的支柱以及与多个支柱接触的多个上部电极。 每三个相邻的柱形成等边三角形，每个柱包括半导体器件。 多个支柱包括具有第一形状的多个第一支柱和具有不同于第一形状的第二形状的多个第二支柱。