公开(公告)号：US10983412B1

公开(公告)日：2021-04-20

申请号：US16674711

申请日：2019-11-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  Siva P. Adusumilli ,  John J. Ellis-Monaghan

IPC: G02F1/225 ,  G02F1/025 ,  G02F1/01 ,  G02B6/122 ,  H01L31/0232 ,  G02B6/12 ,  G02B6/136 ,  G02F1/21

Abstract: Structures including a photodetector and methods of fabricating such structures. A substrate, which is composed of a semiconductor material, includes a first trench, a second trench, and a pillar of the semiconductor material that is laterally positioned between the first trench and the second trench. A first portion of a dielectric layer is located in the first trench and a second portion of the dielectric layer is located in the second trench. A waveguide core is coupled to the pillar at a top surface of the substrate.

公开(公告)号：US12154956B1

公开(公告)日：2024-11-26

申请号：US18632902

申请日：2024-04-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Johnatan Avraham Kantarovsky ,  Rajendran Krishnasamy ,  Mark D. Levy ,  John J. Ellis-Monaghan ,  Michael J. Zierak ,  Kristin Marie Welch

IPC: H01L29/51 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: Disclosed are a structure with a multi-level field plate and a method of forming the structure. The field plate includes multiple first conductors on a dielectric layer and separated from each other by spaces with different widths (e.g., by with progressively decreasing widths). A conformal additional dielectric layer extends over the first conductors and onto the dielectric layer within the spaces. The field plate also includes, on the additional dielectric layer, second conductor(s) with portions thereof extending into the spaces. Within the spaces, the second conductor portions are at different heights (e.g., at progressively increasing heights) above the dielectric layer. Such a field plate can be incorporated into a transistor (e.g., a high electron mobility transistor (HEMT)) to, not only reduce the peak of an electric field exhibited proximal to a gate terminal, but to ensure the electric field is essentially uniform level between the gate and drain terminals.

公开(公告)号：US11949034B2

公开(公告)日：2024-04-02

申请号：US17849285

申请日：2022-06-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Siva P. Adusumilli ,  Ramsey Hazbun

IPC: H01L31/105 ,  H01L31/0288 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/105 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/0216

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodetector and methods of manufacture. The structure includes: a photodetector; and a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the first dopant type from the second dopant type.

公开(公告)号：US11639895B2

公开(公告)日：2023-05-02

申请号：US17195887

申请日：2021-03-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  Steven M. Shank ,  Anthony K. Stamper ,  John J. Ellis-Monaghan ,  John J. Pekarik ,  Yusheng Bian

IPC: G01N21/64 ,  G01N21/85 ,  H01L31/0232 ,  H01L31/12 ,  H01L31/02

Abstract: A “lab on a chip” includes an optofluidic sensor and components to analyze signals from the optofluidic sensor. The optofluidic sensor includes a substrate, a channel at least partially defined by a portion of a layer of first material on the substrate, input and output fluid reservoirs in fluid communication with the channel, at least a first radiation source coupled to the substrate adapted to generate radiation in a direction toward the channel, and at least one photodiode positioned adjacent and below the channel.

公开(公告)号：US11611002B2

公开(公告)日：2023-03-21

申请号：US16935854

申请日：2020-07-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. Levy ,  Edward W. Kiewra ,  Siva P. Adusumilli ,  John J. Ellis-Monaghan

IPC: H01L29/868 ,  H01L31/107 ,  H01L29/66 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: a spiral fin structure comprising semiconductor substrate material and dielectric material; a photosensitive semiconductor material over sidewalls and a top surface of the spiral fin structure, the photosensitive semiconductor material positioned to capture laterally emitted incident light; a doped semiconductor material above the photosensitive semiconductor material; and contacts electrically contacting the semiconductor substrate material and the doped semiconductor material from a top surface thereof.

公开(公告)号：US11569405B2

公开(公告)日：2023-01-31

申请号：US16686973

申请日：2019-11-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Steven M. Shank ,  Vibhor Jain ,  Anthony K. Stamper ,  John J. Ellis-Monaghan ,  John J. Pekarik

IPC: H01L31/103 ,  H01L31/18 ,  H01L31/028

Abstract: Structures including a photodetector and methods of fabricating such structures. The photodetector is positioned over the top surface of the substrate. The photodetector includes a portion of a semiconductor layer comprised of a semiconductor alloy, a p-type doped region in the portion of the semiconductor layer, and an n-type doped region in the portion of the semiconductor layer. The p-type doped region and the n-type doped region converge along a p-n junction. The portion of the semiconductor layer has a first side and a second side opposite from the first side. The semiconductor alloy has a composition that is laterally graded from the first side to the second side of the portion of the semiconductor layer.

公开(公告)号：US20220291464A1

公开(公告)日：2022-09-15

申请号：US17196428

申请日：2021-03-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Nicholas A. Polomoff ,  Jae Kyu Cho ,  Frank Kuechenmeister ,  John J. Ellis-Monaghan ,  Michal Rakowski

IPC: G02B6/42 ,  G02B6/13 ,  F21V8/00 ,  G02B6/122

Abstract: Structures including an edge coupler and a crackstop, as well as methods of forming a structure including an edge coupler and a crackstop. A waveguide core and a crackstop are located over a top surface of a dielectric layer. A communication passageway is either optically coupled or electrically coupled to the waveguide core. The communication passageway, which may include an electric conductor or a buried waveguide core, extends laterally beneath the crackstop.

公开(公告)号：US11444160B2

公开(公告)日：2022-09-13

申请号：US17155182

申请日：2021-01-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anupam Dutta ,  Venkata N. R. Vanukuru ,  John J. Ellis-Monaghan

IPC: H01L29/10 ,  H01L21/761 ,  H01L21/762 ,  H01L29/08 ,  H01L29/861

Abstract: The disclosure provides an integrated circuit (IC) structure with a body contact to a well with multiple diode junctions. A first doped well is in a substrate. A transistor is on the first doped well. A trench isolation (TI) is adjacent a portion of the first doped well. A second doped well within the substrate has a bottom surface beneath a bottom surface of the first doped well. A sidewall of the TI horizontally abuts the second doped well. A first diode junction is between the second doped well and the first doped well. A second diode junction is between the second doped well and the substrate. A body contact is on the second doped well.

公开(公告)号：US20220223688A1

公开(公告)日：2022-07-14

申请号：US17684498

申请日：2022-03-02

Applicant: GlobalFoundries U.S. INC.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Vibhor Jain ,  John J. Ellis-Monaghan

IPC: H01L29/08 ,  H01L29/78

Abstract: The disclosure provides a field effect transistor (FET) stack with methods to form the same. The FET stack includes a first transistor over a substrate. The first transistor includes a first active semiconductor material including a first channel region between a first set of source/drain terminals, and a first gate structure over the first channel region. The first gate structure includes a first gate insulator of a first thickness above the first channel region. A second transistor is over the substrate and horizontally separated from the first transistor. A second gate structure of the second transistor may include a second gate insulator of a second thickness above a second channel region, the second thickness being greater than the first thickness. A shared gate node may be coupled to each of the first gate structure and the second gate structure.

公开(公告)号：US11374040B1

公开(公告)日：2022-06-28

申请号：US17113418

申请日：2020-12-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： John J. Ellis-Monaghan ,  Steven M. Shank ,  Rajendran Krishnasamy ,  Ramsey Hazbun

IPC: H01L27/144 ,  H01L31/028 ,  H01L31/18 ,  H01L31/103 ,  H01L31/0312

Abstract: Structures including multiple photodiodes and methods of fabricating a structure including multiple photodiodes. A substrate has a first trench extending to a first depth into the substrate and a second trench extending to a second depth into the substrate that is greater than the first depth. A first photodiode includes a first light-absorbing layer containing a first material positioned in the first trench. A second photodiode includes a second light-absorbing layer containing a second material positioned in the second trench. The first material and the second material each include germanium.