公开(公告)号：US20100102312A1

公开(公告)日：2010-04-29

申请号：US12581200

申请日：2009-10-19

申请人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Shunichi ITO ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Shunichi ITO ,  Junichiro SAKATA

IPC分类号： H01L29/786 ,  H01L29/12 ,  H01L33/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/78618

摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.

摘要翻译： 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。 氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数） 小于50），还含有氢。 在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。 此外，氧化物半导体具有非晶结构。 这里，n优选为大于或等于50，更优选小于10的非整数。

公开(公告)号：US20130048978A1

公开(公告)日：2013-02-28

申请号：US13592942

申请日：2012-08-23

申请人： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

发明人： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/22

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78696

摘要： Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

摘要翻译： 提供了包括氧化物半导体并且具有稳定的电特性的半导体器件。 具体地，提供了包括氧化物半导体并且包括具有有利特性的栅极绝缘膜的半导体器件。 此外，提供了一种用于制造半导体器件的方法。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，以及与氧化物半导体膜接触的源电极和漏电极。 栅极绝缘膜至少包括形成在氧氮化硅膜上的氮氧化硅膜和氧释放型氧化物膜。 氧化物半导体膜与氧释放型氧化物膜形成并接触。

公开(公告)号：US20110210355A1

公开(公告)日：2011-09-01

申请号：US12871176

申请日：2010-08-30

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

IPC分类号： H01L33/36 ,  H01L33/00

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/52 ,  H01L2227/323

摘要： An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

摘要翻译： 目的在于提高发光装置的可靠性。 发光装置具有包括用于驱动电路的晶体管和包括用于一个衬底上的像素的晶体管的像素部分的驱动器电路部分。 用于驱动电路的晶体管和用于像素的晶体管是反向交错晶体管，每个晶体管包括与氧化物绝缘层的一部分接触的氧化物半导体层。 在像素部分中，在氧化物绝缘层上设置滤色器层和发光元件。 在用于驱动电路的晶体管中，在氧化物绝缘层上设置与栅电极层和氧化物半导体层重叠的导电层。 使用金属导电膜形成栅极电极层，源极电极层和漏极电极层。

公开(公告)号：US20110089425A1

公开(公告)日：2011-04-21

申请号：US12969789

申请日：2010-12-16

申请人： Mitsuhiro ICHIJO ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

发明人： Mitsuhiro ICHIJO ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L29/92

CPC分类号： H01L27/1266 ,  C23C16/02 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/31155 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/67207 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/13

摘要： A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH4), nitrous oxide (N2O), and a rare gas are introduced into a chamber to generate high-density plasma at a pressure higher than or equal to 10 Pa and lower than or equal to 30 Pa so that an insulating film is formed over a substrate having an insulating surface. After that, the supply of a monosilane gas is stopped, and nitrous oxide (N2O) and a rare gas are introduced without exposure to the air to perform plasma treatment on a surface of the insulating film.

摘要翻译： 提供了用作半导体集成电路的绝缘膜的绝缘膜的制造方法，其即使厚度小也能够确保其可靠性。 特别地，提供了一种在低基板温度下在具有绝缘表面的基板上制造高品质绝缘膜的方法，该绝缘表面可以被扩大。 将甲硅烷气体（SiH 4），一氧化二氮（N 2 O）和稀有气体引入室中以在高于或等于10Pa且低于或等于30Pa的压力下产生高密度等离子体，使得绝缘 膜形成在具有绝缘表面的基板上。 之后，停止供给单硅烷气体，一边不暴露于空气中一氧化二氮（N2O）和稀有气体被引入到绝缘膜的表面进行等离子体处理。

公开(公告)号：US20090011611A1

公开(公告)日：2009-01-08

申请号：US12130307

申请日：2008-05-30

申请人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI ,  Naoya SAKAMOTO

发明人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI ,  Naoya SAKAMOTO

IPC分类号： H01L21/469

CPC分类号： H01L21/31608 ,  C23C16/4404 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/4908

摘要： It is an object to provide a method for manufacturing a semiconductor device that has a semiconductor element including a film in which mixing impurities is suppressed. It is another object to provide a method for manufacturing a semiconductor device with high yield. In a method for manufacturing a semiconductor device in which an insulating film is formed in contact with a semiconductor layer provided over a substrate having an insulating surface with use of a plasma CVD apparatus, after an inner wall of a reaction chamber of the plasma CVD apparatus is coated with a film that does not include an impurity to the insulating film, a substrate is introduced in the reaction chamber, and the insulating film is deposited over the substrate. As a result, an insulating film in which the amount of impurities is reduced can be formed.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件具有包含其中抑制混合杂质的膜的半导体元件。 另一个目的是提供一种以高产率制造半导体器件的方法。 在制造半导体器件的方法中，其中绝缘膜与使用等离子体CVD装置的具有绝缘表面的衬底上提供的半导体层形成接触，在等离子体CVD装置的反应室的内壁 涂覆有不含杂质的薄膜，在反应室中引入基板，并将绝缘膜沉积在基板上。 结果，可以形成其中杂质减少量的绝缘膜。

公开(公告)号：US20110031493A1

公开(公告)日：2011-02-10

申请号：US12848406

申请日：2010-08-02

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

IPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/36

CPC分类号： H01L27/1225 ,  H01L21/385 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层，每个源电极层和漏极电极层的端部位于比半导体层的端部更靠内侧的形状。 在驱动电路部分的薄膜晶体管中，半导体层设置在栅电极层和导电层之间。 第一布线和第二布线通过氧化物导电层在设置在栅极绝缘层中的开口中电连接。

公开(公告)号：US20130043466A1

公开(公告)日：2013-02-21

申请号：US13572847

申请日：2012-08-13

申请人： Masafumi NOMURA ,  Kenichi OKAZAKI ,  Toshiyuki MIYAMOTO ,  Takashi HAMOCHI ,  Shunpei YAMAZAKI

发明人： Masafumi NOMURA ,  Kenichi OKAZAKI ,  Toshiyuki MIYAMOTO ,  Takashi HAMOCHI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/42

CPC分类号： H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use is provided. A method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film.

摘要翻译： 提供了包括氧化物半导体并且包括更优异的栅极绝缘膜的半导体器件。 本发明提供了一种从投入实际使用的大规模生产技术的膜结构，工艺条件，制造装置等的变化少的高可靠性和电稳定性的半导体装置。 提供一种半导体器件的制造方法。 半导体器件包括形成在栅电极上的栅电极，栅绝缘膜和形成在栅极绝缘膜上的氧化物半导体膜。 栅极绝缘膜包括在氮氧化硅膜上形成的氮氧化硅膜，氧氮化硅膜和在氧氮化硅膜上形成的金属氧化物膜。 氧化物半导体膜形成在金属氧化物膜上并与其接触。

公开(公告)号：US20130011962A1

公开(公告)日：2013-01-10

申请号：US13603484

申请日：2012-09-05

申请人： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

发明人： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC分类号： H01L21/363 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US20120298998A1

公开(公告)日：2012-11-29

申请号：US13473653

申请日：2012-05-17

申请人： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

摘要： The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

摘要翻译： 氧化物半导体膜中的杂质浓度降低，可以获得高可靠性。

公开(公告)号：US20110260285A1

公开(公告)日：2011-10-27

申请号：US13177585

申请日：2011-07-07

申请人： Shunpei YAMAZAKI ,  Mitsuhiro ICHIJO ,  Makoto FURUNO ,  Takashi OHTSUKI ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO

发明人： Shunpei YAMAZAKI ,  Mitsuhiro ICHIJO ,  Makoto FURUNO ,  Takashi OHTSUKI ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO

IPC分类号： H01L29/06

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. The semiconductor substrate includes a bonding layer which forms a bonding plane, a barrier layer formed of an insulating material containing nitrogen, a relief layer which is formed of an insulating material that includes nitrogen at less than 20 at. % and hydrogen at 1 at. % to 20 at. %, and an insulating layer containing a halogen, between a supporting substrate and a single-crystal semiconductor layer. The semiconductor device includes the above-described structure at least partially, and a gate insulating layer formed by a microwave plasma CVD method using SiH4 and N2O as source gases is in contact with the single-crystal semiconductor layer.

摘要翻译： 为了提供包括适用于实际使用的结晶半导体层的半导体衬底，以及使用与半导体层的材料不同的材料用于支撑衬底，以及使用该半导体衬底的半导体器件。 半导体基板包括形成接合面的接合层，由含氮的绝缘材料形成的阻挡层，由包含小于20at的氮的绝缘材料形成的凸版层。 ％和氢气在1 at。 ％至20 at。 ％，以及含有卤素的绝缘层，在支撑基板和单晶半导体层之间。 半导体器件至少部分地包括上述结构，并且通过使用SiH 4和N 2 O作为源气体的微波等离子体CVD方法形成的栅极绝缘层与单晶半导体层接触。