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    SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体衬底和制造方法

    公开(公告)号：US20110260285A1

    公开(公告)日：2011-10-27

    申请号：US13177585

    申请日：2011-07-07

    申请人： Shunpei YAMAZAKI ,  Mitsuhiro ICHIJO ,  Makoto FURUNO ,  Takashi OHTSUKI ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO

    发明人： Shunpei YAMAZAKI ,  Mitsuhiro ICHIJO ,  Makoto FURUNO ,  Takashi OHTSUKI ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO

    IPC分类号： H01L29/06

    CPC分类号： H01L21/76254 ,  H01L21/84

    摘要： To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. The semiconductor substrate includes a bonding layer which forms a bonding plane, a barrier layer formed of an insulating material containing nitrogen, a relief layer which is formed of an insulating material that includes nitrogen at less than 20 at. % and hydrogen at 1 at. % to 20 at. %, and an insulating layer containing a halogen, between a supporting substrate and a single-crystal semiconductor layer. The semiconductor device includes the above-described structure at least partially, and a gate insulating layer formed by a microwave plasma CVD method using SiH4 and N2O as source gases is in contact with the single-crystal semiconductor layer.

    摘要翻译： 为了提供包括适用于实际使用的结晶半导体层的半导体衬底，以及使用与半导体层的材料不同的材料用于支撑衬底，以及使用该半导体衬底的半导体器件。 半导体基板包括形成接合面的接合层，由含氮的绝缘材料形成的阻挡层，由包含小于20at的氮的绝缘材料形成的凸版层。 ％和氢气在1 at。 ％至20 at。 ％，以及含有卤素的绝缘层，在支撑基板和单晶半导体层之间。 半导体器件至少部分地包括上述结构，并且通过使用SiH 4和N 2 O作为源气体的微波等离子体CVD方法形成的栅极绝缘层与单晶半导体层接触。

    METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    形成微晶半导体膜的方法和制造半导体器件的方法

    公开(公告)号：US20120021570A1

    公开(公告)日：2012-01-26

    申请号：US13184589

    申请日：2011-07-18

    申请人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Ryo TOKUMARU ,  Yuji EGI ,  Erika KATO ,  Miyako MORIKUBO

    发明人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Ryo TOKUMARU ,  Yuji EGI ,  Erika KATO ,  Miyako MORIKUBO

    IPC分类号： H01L21/336 ,  H01L21/20

    CPC分类号： H01L29/78696 ,  C30B25/105 ,  C30B25/183 ,  C30B29/06 ,  C30B29/08 ,  H01L29/04 ,  H01L29/78618 ,  H01L29/78648

    摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.

    摘要翻译： 在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至 填充混合晶粒之间的空间。 在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。 在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。

    METHOD FOR FORMING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    形成半导体膜的方法和制造半导体器件的方法

    公开(公告)号：US20120208360A1

    公开(公告)日：2012-08-16

    申请号：US13368379

    申请日：2012-02-08

    申请人： Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Takashi OHTSUKI ,  Ryota TAJIMA ,  Erika KATO

    发明人： Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Takashi OHTSUKI ,  Ryota TAJIMA ,  Erika KATO

    IPC分类号： H01L21/336 ,  H01L21/3065

    CPC分类号： H01L29/66765 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/78648 ,  H01L29/78696

    摘要： A microcrystalline semiconductor film is formed over a substrate using a plasma CVD apparatus which includes a reaction chamber in such a manner that a deposition gas and hydrogen are supplied to the reaction chamber in which the substrate is set between a first electrode and a second electrode; and plasma is generated in the reaction chamber by supplying high-frequency power to the first electrode. Note that the plasma density in a region overlapping with an end portion of the substrate in a region where the plasma is generated is set to be higher than that in a region which is positioned more on the inside than the region overlapping with the end portion of the substrate, so that the microcrystalline semiconductor film is formed over a region which is positioned more on the inside than the end portion of the substrate.

    摘要翻译： 使用等离子体CVD装置在基板上形成微晶半导体膜，所述等离子体CVD装置包括反应室，使得将沉积气体和氢气供应到反应室中，其中基板设置在第一电极和第二电极之间; 并且通过向第一电极提供高频电力而在反应室中产生等离子体。 注意，在等离子体产生的区域中与衬底的端部重叠的区域中的等离子体密度设定为高于在位于更内侧的区域中的等离子体密度 使得微结晶半导体膜形成在位于比衬底的端部更靠内侧的区域上。