公开(公告)号：US20110260285A1

公开(公告)日：2011-10-27

申请号：US13177585

申请日：2011-07-07

申请人： Shunpei YAMAZAKI ,  Mitsuhiro ICHIJO ,  Makoto FURUNO ,  Takashi OHTSUKI ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO

发明人： Shunpei YAMAZAKI ,  Mitsuhiro ICHIJO ,  Makoto FURUNO ,  Takashi OHTSUKI ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO

IPC分类号： H01L29/06

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. The semiconductor substrate includes a bonding layer which forms a bonding plane, a barrier layer formed of an insulating material containing nitrogen, a relief layer which is formed of an insulating material that includes nitrogen at less than 20 at. % and hydrogen at 1 at. % to 20 at. %, and an insulating layer containing a halogen, between a supporting substrate and a single-crystal semiconductor layer. The semiconductor device includes the above-described structure at least partially, and a gate insulating layer formed by a microwave plasma CVD method using SiH4 and N2O as source gases is in contact with the single-crystal semiconductor layer.

摘要翻译： 为了提供包括适用于实际使用的结晶半导体层的半导体衬底，以及使用与半导体层的材料不同的材料用于支撑衬底，以及使用该半导体衬底的半导体器件。 半导体基板包括形成接合面的接合层，由含氮的绝缘材料形成的阻挡层，由包含小于20at的氮的绝缘材料形成的凸版层。 ％和氢气在1 at。 ％至20 at。 ％，以及含有卤素的绝缘层，在支撑基板和单晶半导体层之间。 半导体器件至少部分地包括上述结构，并且通过使用SiH 4和N 2 O作为源气体的微波等离子体CVD方法形成的栅极绝缘层与单晶半导体层接触。

公开(公告)号：US20110089425A1

公开(公告)日：2011-04-21

申请号：US12969789

申请日：2010-12-16

申请人： Mitsuhiro ICHIJO ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

发明人： Mitsuhiro ICHIJO ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L29/92

CPC分类号： H01L27/1266 ,  C23C16/02 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/31155 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/67207 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/13

摘要： A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH4), nitrous oxide (N2O), and a rare gas are introduced into a chamber to generate high-density plasma at a pressure higher than or equal to 10 Pa and lower than or equal to 30 Pa so that an insulating film is formed over a substrate having an insulating surface. After that, the supply of a monosilane gas is stopped, and nitrous oxide (N2O) and a rare gas are introduced without exposure to the air to perform plasma treatment on a surface of the insulating film.

摘要翻译： 提供了用作半导体集成电路的绝缘膜的绝缘膜的制造方法，其即使厚度小也能够确保其可靠性。 特别地，提供了一种在低基板温度下在具有绝缘表面的基板上制造高品质绝缘膜的方法，该绝缘表面可以被扩大。 将甲硅烷气体（SiH 4），一氧化二氮（N 2 O）和稀有气体引入室中以在高于或等于10Pa且低于或等于30Pa的压力下产生高密度等离子体，使得绝缘 膜形成在具有绝缘表面的基板上。 之后，停止供给单硅烷气体，一边不暴露于空气中一氧化二氮（N2O）和稀有气体被引入到绝缘膜的表面进行等离子体处理。

公开(公告)号：US20090011611A1

公开(公告)日：2009-01-08

申请号：US12130307

申请日：2008-05-30

申请人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI ,  Naoya SAKAMOTO

发明人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI ,  Naoya SAKAMOTO

IPC分类号： H01L21/469

CPC分类号： H01L21/31608 ,  C23C16/4404 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/4908

摘要： It is an object to provide a method for manufacturing a semiconductor device that has a semiconductor element including a film in which mixing impurities is suppressed. It is another object to provide a method for manufacturing a semiconductor device with high yield. In a method for manufacturing a semiconductor device in which an insulating film is formed in contact with a semiconductor layer provided over a substrate having an insulating surface with use of a plasma CVD apparatus, after an inner wall of a reaction chamber of the plasma CVD apparatus is coated with a film that does not include an impurity to the insulating film, a substrate is introduced in the reaction chamber, and the insulating film is deposited over the substrate. As a result, an insulating film in which the amount of impurities is reduced can be formed.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件具有包含其中抑制混合杂质的膜的半导体元件。 另一个目的是提供一种以高产率制造半导体器件的方法。 在制造半导体器件的方法中，其中绝缘膜与使用等离子体CVD装置的具有绝缘表面的衬底上提供的半导体层形成接触，在等离子体CVD装置的反应室的内壁 涂覆有不含杂质的薄膜，在反应室中引入基板，并将绝缘膜沉积在基板上。 结果，可以形成其中杂质减少量的绝缘膜。

公开(公告)号：US20110111557A1

公开(公告)日：2011-05-12

申请号：US12938527

申请日：2010-11-03

申请人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

发明人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

IPC分类号： H01L21/44

CPC分类号： H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

摘要翻译： 本发明的目的是高速驱动半导体器件或提高半导体器件的可靠性。 在半导体器件的制造方法中，其中在绝缘性的衬底上形成栅电极，在栅电极上形成栅极绝缘膜，并且在栅极绝缘膜上形成氧化物半导体膜，栅极 通过使用高密度等离子体的沉积处理形成绝缘膜。 因此，栅极绝缘膜中的悬挂键减少，并且栅极绝缘膜和氧化物半导体之间的界面的质量得到改善。

公开(公告)号：US20110053358A1

公开(公告)日：2011-03-03

申请号：US12860175

申请日：2010-08-20

申请人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

发明人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/20

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US20090233425A1

公开(公告)日：2009-09-17

申请号：US12400844

申请日：2009-03-10

申请人： Makoto FURUNO ,  Tetsuo SUGIYAMA ,  Taichi NOZAWA ,  Mitsuhiro ICHIJO ,  Ryota TAJIMA ,  Shunpei YAMAZAKI

发明人： Makoto FURUNO ,  Tetsuo SUGIYAMA ,  Taichi NOZAWA ,  Mitsuhiro ICHIJO ,  Ryota TAJIMA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/205 ,  C23C14/34

CPC分类号： H01L27/127 ,  C23C16/24 ,  C23C16/509 ,  H01L21/67207 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline semiconductor film and an amorphous semiconductor film are stacked in the same reaction chamber where the pressure is reduced to ultra-high vacuum. By forming the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film, oxidation of the microcrystalline semiconductor film is prevented.

摘要翻译： 通过包括串联连接的第一和第二涡轮分子泵的抽空单元，将反应室中的极限压力降低到超高真空。 通过刀刃式金属密封法兰，反应室中的泄漏量减少。 将微晶半导体膜和非晶半导体膜堆叠在相同的反应室中，其中压力降低至超高真空。 通过形成覆盖微晶半导体膜的表面的非晶半导体膜，可以防止微晶半导体膜的氧化。

公开(公告)号：US20120248470A1

公开(公告)日：2012-10-04

申请号：US13486017

申请日：2012-06-01

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

IPC分类号： H01L33/08

CPC分类号： H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

摘要翻译： 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

公开(公告)号：US20130001571A1

公开(公告)日：2013-01-03

申请号：US13615805

申请日：2012-09-14

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

IPC分类号： H01L33/08

CPC分类号： H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

摘要翻译： 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

公开(公告)号：US20120129329A1

公开(公告)日：2012-05-24

申请号：US13362049

申请日：2012-01-31

申请人： Taketomi ASAMI ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Shunpei YAMAZAKI

发明人： Taketomi ASAMI ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/28

CPC分类号： H01L27/127 ,  H01L21/32136 ,  H01L21/67207 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.

摘要翻译： 提供本发明是为了消除由于形成TFT的每个膜的界面的污染物杂质引起的污染，这是降低TFT的可靠性的主要因素。 通过连接洗涤室和成膜室，可以在从洗涤步骤到成膜步骤的时间内不将TFT暴露于空气中进行成膜，并且可以保持形成的每个膜的界面的清洁度 TFT。

公开(公告)号：US20110020989A1

公开(公告)日：2011-01-27

申请号：US12838023

申请日：2010-07-16

申请人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Hidekazu MIYAIRI ,  Mitsuhiro ICHIJO ,  Taichi NOZAWA

发明人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Hidekazu MIYAIRI ,  Mitsuhiro ICHIJO ,  Taichi NOZAWA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/28 ,  C23C16/45523 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78684

摘要： A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.

摘要翻译： 形成具有高结晶度的微晶半导体膜。 此外，具有优选的电特性和高可靠性的薄膜晶体管和包括薄膜晶体管的显示装置以高生产率制造。 以第一流量引入包含硅或锗的沉积气体的步骤，并且以固定速率引入氢气，并且以固定速率引入氢气，并且以第二流量引入含有硅或锗的沉积气体的步骤，从而 将含有硅或锗的氢气和沉积气体混合，供给高频电力。 因此，在基板上形成微晶半导体膜。