Abstract:
Apparatuses and methods for error correction coding and data bus inversion for semiconductor memories are described. An example apparatus includes an I/O circuit configured to receive first data and first ECC data associated with the first data, a memory array, and a control circuit. The control circuit is coupled between the I/O circuit and the memory array. The control circuit is configured to execute first ECC-decoding to produce corrected first data and corrected first ECC data responsive, at least in part, to the first data and the first ECC data. The control circuit is further configured to store both the corrected first data and the corrected first ECC data into the memory array.
Abstract:
In an example apparatus, a command path receives read commands and provides respective control signals for each read command. The command path is configured to provide initial control signals for an initial read command responsive to a first clock edge of a clock signal of a plurality of multiphase clock signals and to further provide respective control signals for subsequent read commands responsive to receipt of the subsequent read commands. The example apparatus further includes a read data output circuit configured to receive the control signals from the command path and further receive read data in parallel. The read data output circuit is configured to provide the read data serially responsive to the control signals.
Abstract:
A current sense amplifier may include one or more clamping circuits coupled between differential output nodes of the amplifier. The clamping circuits may be enabled during at least a portion of the time that the sense amplifier is sensing the state of a memory cell coupled to a differential input of the sense amplifier. The clamping circuits may be disabled during the time that the sense amplifier is sensing the state of a memory cell at different times in a staggered manner. The clamping circuits may be effecting in making the current sense amplifier less sensitive to noise signals.
Abstract:
Apparatuses and methods for implementing masked write commands are disclosed herein. An example apparatus may include a memory bank, a local buffer circuit, and an address control circuit. The local buffer circuit may be associated with the memory bank. The address control circuit may be coupled to the memory bank and configured to receive a command and an address associated with the command. The address control circuit may include a global buffer circuit configured to store the address. The address control circuit may further be configured to delay the command using one of a plurality of command paths based, at least in part, on a write latency and to provide the address stored in the global buffer circuit to the local buffer circuit to be stored therein.
Abstract:
Apparatuses and methods related to altering the timing of command signals for executing commands is disclosed. One such method includes calculating a forward path delay of a clock circuit in terms of a number of clock cycles of an output clock signal provided by the clock circuit and adding a number of additional clock cycles of delay to a forward path delay of a signal path. The forward path delay of the clock circuit is representative of the forward path delay of the signal path and the number of additional clock cycles is based at least in part on the number of clock cycles of forward path delay.
Abstract:
A memory, a system and a method for controlling dynamic burst length control data can generate clocks for both an upstream counter and a downstream counter by using substantially the same latency delayed received command indications. A downstream clock generation circuit generates a clock signal from a received command indication delayed by both a delay locked loop and latency delays stored in latency control circuits. An upstream clock generation circuit generates a clock signal from the received command indication delayed by the delay locked loop and capture indications from the latency control circuits.