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    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE
    53.
    发明申请
    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE 有权
    具有动态栅极导通电容的半导体器件

    公开(公告)号：US20130009227A1

    公开(公告)日：2013-01-10

    申请号：US13614479

    申请日：2012-09-13

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    IPC分类号： H01L27/07 ,  H01L21/8234

    CPC分类号： H01L27/0808 ,  H01L21/26513 ,  H01L27/0811 ,  H01L27/088 ,  H01L29/7836

    摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

    摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

    INTEGRATED CIRCUIT HAVING COMPENSATION COMPONENT
    56.
    发明申请
    INTEGRATED CIRCUIT HAVING COMPENSATION COMPONENT 有权
    具有补偿组件的集成电路

    公开(公告)号：US20120032255A1

    公开(公告)日：2012-02-09

    申请号：US13277820

    申请日：2011-10-20

    申请人： Armin Willmeroth ,  Holger Kapels

    发明人： Armin Willmeroth ,  Holger Kapels

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/7824

    摘要： An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

    摘要翻译： 公开了一种集成电路和部件。 在一个实施例中，组件是补偿部件，公开了以V形方式构造漂移区域中的补偿区域，以实现空间电荷区域从补偿区域的上端到下端的会聚。

    Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production
    57.
    发明授权
    Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production 有权
    具有半导体主体中的载流子补偿结构的半导体器件及其制造方法

    公开(公告)号：US08101997B2

    公开(公告)日：2012-01-24

    申请号：US12111749

    申请日：2008-04-29

    申请人： Armin Willmeroth ,  Michael Rueb

    发明人： Armin Willmeroth ,  Michael Rueb

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7395

    摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.

    摘要翻译： 在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。 半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。 漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。 朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。 朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

    Integrated circuit including a charge compensation component
    59.
    发明授权
    Integrated circuit including a charge compensation component 有权
    集成电路包括电荷补偿元件

    公开(公告)号：US07968919B2

    公开(公告)日：2011-06-28

    申请号：US11961235

    申请日：2007-12-20

    申请人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

    发明人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7813

    摘要： A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the center of the drift path.

    摘要翻译： 具有两个电极之间的漂移路径的电荷补偿组件，电极和反电极及其制造方法。 漂移路径具有第一导电类型的漂移区和相对于第一导电类型的互补导电类型的电荷补偿区。 包括垂直延伸的漂移路径的水平漂移路径层的掺杂位置的体积积分的漂移路径层掺杂包括布置在漂移路径层中的漂移区域和电荷补偿区域在电极附近较大， 在漂移路径的中心方向。

    MOS TRANSISTOR WITH ELEVATED GATE DRAIN CAPACITY
    60.
    发明申请
    MOS TRANSISTOR WITH ELEVATED GATE DRAIN CAPACITY 有权
    具有高度门排水能力的MOS晶体管

    公开(公告)号：US20110089481A1

    公开(公告)日：2011-04-21

    申请号：US12976107

    申请日：2010-12-22

    申请人： Armin Willmeroth ,  Michael Treu

    发明人： Armin Willmeroth ,  Michael Treu

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

    摘要： A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.

    摘要翻译： 描述了具有增加的栅 - 漏电容的MOS晶体管。 一个实施例提供了第一导电类型的漂移区。 至少一个晶体管单元具有体区，通过体区与漂移区分离的源极区以及邻近体区设置并通过栅介质与体区介电绝缘的栅电极。 在漂移区域中布置有至少一个第一导电类型的补偿区域。 至少一个反馈电极被布置在与身体区隔一定距离处，该区域通过反馈电介质与漂移区介电绝缘，并且与电极导电连接。