公开(公告)号：US20080282979A1

公开(公告)日：2008-11-20

申请号：US11750539

申请日：2007-05-18

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: C23C16/00

CPC classification number: H01L21/67069 ,  H01J37/32192 ,  H01J37/3244

Abstract: A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.

Abstract translation: 描述了一种通过处理系统中的腔室部件引入过程流体的方法和系统。 腔室部件包括腔室元件，腔室元件具有在腔室元件的供给侧上的第一表面和腔室元件的过程侧上的第二表面，其中处理侧与供给侧相对。 此外，腔室部件包括从供应侧延伸穿过腔室元件到管道侧的管道，其中管道包括被配置为接收过程流体的入口和被配置为分配过程流体的出口。

公开(公告)号：US20080223873A1

公开(公告)日：2008-09-18

申请号：US11684853

申请日：2007-03-12

Applicant: Lee Chen ,  Radha Sundararajan ,  Merritt Funk

Inventor： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC: C23F1/02

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/0324 ,  Y10T428/215

Abstract: A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.

Abstract translation: 描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。 用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。 所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与 一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

公开(公告)号：US20080220340A1

公开(公告)日：2008-09-11

申请号：US11684154

申请日：2007-03-09

Applicant: John Kulp ,  Michael A. Carcasi ,  Merritt Funk

Inventor： John Kulp ,  Michael A. Carcasi ,  Merritt Funk

IPC: B05D3/10 ,  G03F1/14

CPC classification number: H01L21/6715 ,  G03F7/3021 ,  H01L21/67109

Abstract: Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.

Abstract translation: 本文通常描述用于加热衬底和牺牲层的装置和方法的实施例。 可以描述和要求保护其他实施例。

公开(公告)号：US07292906B2

公开(公告)日：2007-11-06

申请号：US10890410

申请日：2004-07-14

Applicant: Merritt Funk ,  Kevin Augustine Pinto ,  Asao Yamashita ,  Wesley Natzle

Inventor： Merritt Funk ,  Kevin Augustine Pinto ,  Asao Yamashita ,  Wesley Natzle

IPC: G06F19/00 ,  H01L21/302

CPC classification number: H01L22/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A processing method of processing a substrate is presented that includes: receiving pre-process data, wherein the pre-process data comprises a desired process result and actual measured data for the substrate; determining a required process result, wherein the required process result comprises the difference between the desired process result and the actual measured data; creating a new process recipe by modifying a nominal recipe obtained from a processing tool using at least one of a static recipe and a formula model, wherein the new process recipe provides a new process result that is approximately equal to the required process result; and sending the new process recipe to the processing tool and the substrate.

Abstract translation: 提出了一种处理衬底的处理方法，包括：接收预处理数据，其中预处理数据包括所需的处理结果和衬底的实际测量数据; 确定所需的处理结果，其中所需的处理结果包括期望的处理结果与实际测量数据之间的差异; 通过使用静态配方和公式模型中的至少一个修改从处理工具获得的名义配方来创建新的过程配方，其中新的过程配方提供近似等于所需过程结果的新的过程结果; 并将新的工艺配方发送到处理工具和衬底。

公开(公告)号：US20070239369A1

公开(公告)日：2007-10-11

申请号：US11394859

申请日：2006-03-31

Applicant: Merritt Funk ,  Daniel Prager

Inventor： Merritt Funk ,  Daniel Prager

IPC: G06F19/00

CPC classification number: G01B11/24 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615

Abstract: A method of creating a virtual profile library includes obtaining a reference signal. The reference signal was generated by measuring a signal off a reference structure on a semiconductor wafer with a metrology device. The reference signal is compared to a plurality of signals in a first library. The comparison is stopped if a first matching criteria is met. The reference signal is compared to a plurality of signals in a second library. The comparison is stopped if a second matching criteria is met. A virtual profile data space is created when the first and second matching criteria are not met. The virtual profile data space is created using differences between a profile data space associated with the first library and a profile data space associated with the second library. A first virtual profile signal is created in the virtual profile data space. A virtual profile shape and/or virtual profile parameters is created based on the first virtual profile signal. A difference is calculated between the reference signal and the first virtual profile signal. The difference is compared to a virtual profile library creation criteria. If the virtual profile library creation criteria is met, the first virtual profile signal and the virtual profile data, which includes the virtual profile shape and/or virtual profile parameters, associated with the first virtual profile signal is stored. Or, if the virtual profile library creation criteria is not met, a corrective action is applied.

Abstract translation: 创建虚拟简档库的方法包括获得参考信号。 通过用测量装置测量半导体晶片上的参考结构的信号来产生参考信号。 将参考信号与第一库中的多个信号进行比较。 如果满足第一个匹配条件，则停止比较。 将参考信号与第二库中的多个信号进行比较。 如果满足第二个匹配条件，则停止比较。 当不满足第一和第二匹配标准时，创建虚拟简档数据空间。 使用与第一库相关联的简档数据空间与与第二库关联的简档数据空间之间的差异来创建虚拟简档数据空间。 在虚拟配置文件数据空间中创建第一虚拟配置文件信号。 基于第一虚拟简档信号创建虚拟简档形状和/或虚拟简档参数。 在参考信号和第一虚拟轮廓信号之间计算差。 将差异与虚拟简档库创建标准进行比较。 如果满足虚拟简档库创建标准，则存储与第一虚拟简档信号相关联的第一虚拟简档信号和包括虚拟简档形状和/或虚拟简档参数的虚拟简档数据。 或者，如果虚拟配置文件库创建条件不满足，则应用纠正措施。

公开(公告)号：US20050187649A1

公开(公告)日：2005-08-25

申请号：US11087071

申请日：2005-03-23

Applicant: Merritt Funk ,  Raymond Peterson

Inventor： Merritt Funk ,  Raymond Peterson

IPC: G05B19/418 ,  G05B23/02 ,  H01L21/00 ,  H01L21/66 ,  G06F19/00

CPC classification number: G05B19/4184 ,  G05B19/41865 ,  G05B23/0259 ,  G05B23/0264 ,  G05B23/0267 ,  G05B2219/31186 ,  G05B2219/32126 ,  G05B2219/32128 ,  G05B2219/33148 ,  G05B2219/33225 ,  G05B2219/45031 ,  H01L21/67276 ,  H01L22/20 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  Y02P90/86

Abstract: An Advanced Process Control (APC) system including Graphical User Interfaces (GUIs) is presented for monitoring and controlling a semiconductor manufacturing process that is performed by a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors, and the APC system comprises an APC server, database, interface server, client workstation, and GUI component. The GUI is web-based and is viewable by a user using a web browser.

Abstract translation: 提出了包括图形用户界面（GUI）的高级过程控制（APC）系统，用于监控和控制由半导体处理系统执行的半导体制造过程。 半导体处理系统包括多个处理工具，多个处理模块（室）和多个传感器，APC系统包括APC服务器，数据库，接口服务器，客户端工作站和GUI组件。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。

公开(公告)号：US09151286B2

公开(公告)日：2015-10-06

申请号：US13606689

申请日：2012-09-07

Applicant: Merritt Funk ,  Lee Chen

Inventor： Merritt Funk ,  Lee Chen

IPC: F04B49/06 ,  C23C16/44 ,  H01L21/67 ,  F04D19/04 ,  F04D27/02

CPC classification number: F04B49/06 ,  C23C16/4412 ,  F04D19/042 ,  F04D27/0246 ,  H01L21/67017 ,  H01L21/67253

Abstract: An apparatus and method for controlling pumping characteristics within a semiconductor processing chamber are provided. The apparatus includes levitation of a hollow shaft turbo pump or pump elements, and is configured to control pumping by including adjustments for orientation, position, geometries, and other aspects of the turbo pump. The method includes adjusting design and operational parameters, to control pumping characteristics within the processing chamber.

Abstract translation: 提供一种用于控制半导体处理室内的泵浦特性的装置和方法。 该装置包括悬挂空心轴涡轮泵或泵元件，并且构造成通过包括对涡轮泵的取向，位置，几何形状和其它方面的调整来控制泵送。 该方法包括调整设计和操作参数，以控制处理室内的泵送特性。

公开(公告)号：US08816281B2

公开(公告)日：2014-08-26

申请号：US13433088

申请日：2012-03-28

Applicant: Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC: G01T1/16 ,  H01J37/32 ,  H05H1/00 ,  H01J49/48

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

Abstract translation: 制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。 处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。 处理第三衬底以形成其中具有第三通道的离子收集器。 入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

公开(公告)号：US08747610B2

公开(公告)日：2014-06-10

申请号：US13436760

申请日：2012-03-30

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: C23F1/00

CPC classification number: H01J37/32834 ,  H01J37/32504 ,  H01J37/32633 ,  H01J37/32935

Abstract: A plasma processing system. The processing system comprises a process chamber having first and second ends arranged such that the first end opposes the second end. A substrate support is positioned at the first end of the process chamber and is configured to support a substrate. An exhaust system is positioned proximate the second end of the process chamber and draws a vacuum on the process chamber. Between the exhaust system and substrate support there is a plurality of super-Debye openings, and between the exhaust system and the plurality of super-Debye openings is a plurality of sub-Debye openings. The super-Debye openings are configured to limit diffusion of plasma while the sub-Debye openings are configured to quench plasma.

Abstract translation: 等离子体处理系统 处理系统包括处理室，该处理室的第一和第二端被布置为使得第一端与第二端相对。 衬底支撑件定位在处理室的第一端处并且被配置为支撑衬底。 排气系统定位在处理室的第二端附近并在处理室上抽真空。 在排气系统和基板支撑件之间存在多个超级德拜开口，并且在排气系统和多个超级德拜开口之间是多个次德开口。 超级德拜开口被配置为限制等离子体的扩散，而副德拜开口被配置为猝灭等离子体。

公开(公告)号：US08415884B2

公开(公告)日：2013-04-09

申请号：US12555080

申请日：2009-09-08

Applicant: Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

Inventor： Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

IPC: H05B31/26

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有多个槽的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型，其中第一凹槽构型基本上与多个槽中的槽的第一布置对准，以及形成在等离子体表面中的第二凹槽构型，其中第二凹槽 配置部分地与多个槽中的槽的第二布置部分对准或者不与多个槽中的槽的第二布置对准。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。