摘要:
Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
摘要:
An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.
摘要:
An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要:
A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. Various layers in the laser diode are formed using Be.
摘要:
A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.
摘要:
Solid state lighting devices include a first luminescent element (612) emitting light having a first spectrum, and a second luminescent element (614) emitting light having a second spectrum. The first luminescent element includes a first electroluminescent element (612a) that emits a first pump light, and a first light converting element (612b) that converts at least some of the first pump light to a first re-emitted light component. The second luminescent element includes a second electroluminescent element (614a) that emits a second pump light, and a second light converting element (614b) that converts at least some second pump light to a second re-emitted light component. The first and/or second light converting element includes a potential well. Light emitted by the first and second luminescent elements combine to provide a device output, which can approximate a Planckian locus over a range of color temperatures and exhibit a color rendering index of at least 60, 70, or 80.
摘要:
Methods of making flexible circuit films include providing a polymer film or other flexible substrate having a plurality of alignment marks and a photosensitive material thereon. The substrate passes around a suitable roller, belt, or other inelastic conveyor such that the substrate and the conveyor move together at least from a first location to a second location. Positions of a first set of the alignment marks on a first portion of the substrate are measured when such portion is at the first location, and the measured positions can be used to calculate a distortion of the substrate. The photosensitive material is then patternwise exposed when the first portion of the substrate has moved to the second location. The patternwise exposing is based on the measured positions of the first set of alignment marks, and may include exposing the web with a distortion-adjusted pattern. Related systems and articles are also disclosed.
摘要:
A lighting system provides a system optical output, such as white light, as a function of an applied electrical signal. The system output can be characterized by a color temperature or other measure that represents the color or output spectrum of the output. The system is designed so that the color temperature changes as a function of the applied electrical signal. The changes in color temperature are at least in part a result of a phenomenon known as “current crowding”.
摘要:
Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one or more sides of the light emitting system. The optical cavity includes a semiconductor multilayer stack that receives the emitted first wavelength light and converts at least a portion of the received light to light of a second wavelength. The semiconductor multilayer stack includes a II-VI potential well. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 10 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要:
Light emitting systems and method of fabricating the same are disclosed. The light emitting system includes two or more monolithically integrated luminescent elements. Each luminescent element includes an electroluminescent device and a dedicated switching circuit for driving the electroluminescent device. At least one luminescent element includes a potential well for down converting light emitted by the electroluminescent device in the luminescent element.