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    Methods of forming semiconductor constructions
    53.
    发明授权
    Methods of forming semiconductor constructions 有权
    形成半导体结构的方法

    公开(公告)号：US09373636B2

    公开(公告)日：2016-06-21

    申请号：US14930504

    申请日：2015-11-02

    Applicant: Micron Technology, Inc.

    Inventor： Neal L. Davis ,  David A. Kewley

    IPC: H01L21/336 ,  H01L27/115

    CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/792 ,  H01L29/7926

    Abstract: Some embodiments include a semiconductor construction having a stack containing alternating levels of control gate material and intervening dielectric material. A channel material panel extends through the stack and along a first direction. The panel divides the stack into a first section on a first side of the panel and a second section on a second side of the panel. Memory cell stacks are between the channel material panel and the control gate material. The memory cell stacks include cell dielectric material shaped as containers having open ends pointing toward the channel material panel, and include charge-storage material within the containers. Some embodiments include methods of forming semiconductor constructions.

    Abstract translation: 一些实施例包括具有堆叠的半导体结构，所述堆叠包含交替的控制栅极材料和中间介电材料。 通道材料面板沿着第一方向延伸穿过堆叠。 所述面板将所述堆叠分成所述面板的第一侧上的第一部分和所述面板的第二侧上的第二部分。 存储单元堆叠在通道材料面板和控制栅极材料之间。 存储单元堆叠包括形状为具有指向通道材料面板的开口端的容器的单元电介质材料，并且在容器内包括电荷存储材料。 一些实施例包括形成半导体结构的方法。

    Substrates And Methods Of Forming A Pattern On A Substrate
    55.
    发明申请
    Substrates And Methods Of Forming A Pattern On A Substrate 有权
    基板和基板上形成图案的方法

    公开(公告)号：US20150321447A1

    公开(公告)日：2015-11-12

    申请号：US14788890

    申请日：2015-07-01

    Applicant: Micron Technology, Inc.

    Inventor： Vishal Sipani ,  David A. Kewley ,  Kyle Armstrong ,  Michael Dean Van Patten ,  Michael D. Hyatt

    IPC: B32B3/30

    CPC classification number: B32B3/30 ,  G03F7/0035 ,  G03F7/2002 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24521 ,  Y10T428/24612

    Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.

    Abstract translation: 衬底和在衬底上形成图案的方法。 图案包括重复图案区域和与重复图案区域相邻的图案中断区域。 在衬底上形成掩模，其中掩模包括重复图案区域和图案中断区域，并且使用两个单独的掩蔽步骤形成掩模。 该掩模用于将图案形成到其上接收掩模的下面的基底材料中。 还公开了包括掩模的基板。

    Patterning Methods and Methods of Forming Electrically Conductive Lines
    56.
    发明申请
    Patterning Methods and Methods of Forming Electrically Conductive Lines 有权
    形成导电线的图案化方法和方法

    公开(公告)号：US20150235938A1

    公开(公告)日：2015-08-20

    申请号：US14699664

    申请日：2015-04-29

    Applicant: Micron Technology, Inc.

    Inventor： Vishal Sipani ,  Kyle Armstrong ,  Michael D. Hyatt ,  Michael Dean Van Patten ,  David A. Kewley ,  Ming-Chuan Yang

    IPC: H01L23/525 ,  H01L23/532

    CPC classification number: H01L23/525 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53257 ,  H01L23/53271 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.

    Abstract translation: 一些实施例包括形成导电线的方法。 光致抗蚀剂特征形成在衬底上，其中至少一个光致抗蚀剂特征具有变窄的区域。 修整光致抗蚀剂特征，其穿过狭窄区域以形成间隙。 隔板沿光致抗蚀剂特征的侧壁形成。 间隙中的两个垫片合并在一起。 去除光致抗蚀剂特征以留下包括间隔物的图案。 该图案延伸到衬底中以在衬底内形成多个凹槽。 导电材料形成在凹槽内以形成导电线。 一些实施例包括在半导体衬底上具有多条线的半导体结构。 两条线彼此相邻并且基本上彼此平行，除了在所述两条线彼此合并的区域中。

    Methods of forming a mask and methods of correcting intra-field variation across a mask design used in photolithographic processing
    57.
    发明授权
    Methods of forming a mask and methods of correcting intra-field variation across a mask design used in photolithographic processing 有权
    形成掩模的方法和校正在光刻处理中使用的掩模设计的场内变化的方法

    公开(公告)号：US08966409B2

    公开(公告)日：2015-02-24

    申请号：US13722909

    申请日：2012-12-20

    Applicant: Micron Technology, Inc.

    Inventor： Yuan He ,  Hong Chen ,  David A. Kewley

    IPC: G06F17/50

    CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F1/78

    Abstract: A method of forming a mask includes creating a difference map between a desired intra-field pattern that is to be formed on substrates and an intra-field signature pattern. The intra-field signature pattern represents a pattern formed on an example substrate by an exposure field using an example E-beam-written mask. Modifications are determined to formation of mask features to be made using an E-beam mask writer if forming a modified E-beam-written mask having mask features modified from that of the example E-beam-written mask that will improve substrate feature variation identified in the difference map. The E-beam mask writer is programmed using the determined modifications to improve the substrate feature variation identified in the difference map. It is used to form the modified E-beam-written mask having the modified mask features. One or more substrates are photolithographically processed using the modified E-beam-written mask.

    Abstract translation: 形成掩模的方法包括在要形成在基板上的期望的场内图案和场内签名图案之间产生差分图。 场内签名图案表示通过使用示例电子束写入掩模的曝光场在示例基板上形成的图案。 确定修改以形成使用电子束掩模写入器进行的掩模特征，如果形成修改的电子束写入掩模，其具有从示例电子束写入掩模的掩模特征修改的掩模特征，该掩模特征将改善识别的基板特征变化 在差异地图中。 使用确定的修改来编程电子束掩模写入器以改善在差分图中识别的衬底特征变化。 它用于形成具有修改的掩模特征的经修改的电子束写入掩模。 使用经修改的电子束写入掩模对一个或多个基板进行光刻处理。

    Methods Of Forming A Mask And Methods Of Correcting Intra-Field Variation Across A Mask Design Used In Photolithographic Processing
    58.
    发明申请
    Methods Of Forming A Mask And Methods Of Correcting Intra-Field Variation Across A Mask Design Used In Photolithographic Processing 有权
    形成掩模的方法和校正在光刻处理中使用的掩模设计的场内变化的方法

    公开(公告)号：US20140181763A1

    公开(公告)日：2014-06-26

    申请号：US13722909

    申请日：2012-12-20

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Yuan He ,  Hong Chen ,  David A. Kewley

    IPC: G06F17/50

    CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F1/78

    Abstract: A method of forming a mask includes creating a difference map between a desired intra-field pattern that is to be formed on substrates and an intra-field signature pattern. The intra-field signature pattern represents a pattern formed on an example substrate by an exposure field using an example E-beam-written mask. Modifications are determined to formation of mask features to be made using an E-beam mask writer if forming a modified E-beam-written mask having mask features modified from that of the example E-beam-written mask that will improve substrate feature variation identified in the difference map. The E-beam mask writer is programmed using the determined modifications to improve the substrate feature variation identified in the difference map. It is used to form the modified E-beam-written mask having the modified mask features. One or more substrates are photolithographically processed using the modified E-beam-written mask.

    Abstract translation: 形成掩模的方法包括在要形成在基板上的期望的场内图案和场内签名图案之间产生差分图。 场内签名图案表示通过使用示例电子束写入掩模的曝光场在示例基板上形成的图案。 确定修改以形成使用电子束掩模写入器进行的掩模特征，如果形成修改的电子束写入掩模，其具有从示例电子束写入掩模的掩模特征修改的掩模特征，该掩模特征将改善识别的基板特征变化 在差异地图中。 使用确定的修改来编程电子束掩模写入器以改善在差分图中识别的衬底特征变化。 它用于形成具有修改的掩模特征的经修改的电子束写入掩模。 使用经修改的电子束写入掩模对一个或多个基板进行光刻处理。

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