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    Micro-pixelated fluid-assay precursor structure
    51.
    发明申请
    Micro-pixelated fluid-assay precursor structure 有权
    微像素化流体测定前体结构

    公开(公告)号：US20080085214A1

    公开(公告)日：2008-04-10

    申请号：US11827335

    申请日：2007-07-10

    Applicant: John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele

    Inventor： John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele

    IPC: B01J19/00

    CPC classification number: B01L3/5027 ,  B01L3/502707 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0654 ,  B01L2300/0819 ,  B01L2300/0877 ,  G01N2035/00158

    Abstract: A pixel-by-pixel, digitally-addressable, pixelated, precursor, fluid-assay, active-matrix micro-structure including plural pixels formed preferably on a glass or plastic substrate, wherein each pixel, formed utilizing low-temperature TFT and Si technology, includes (a) at least one non-functionalized, digitally-addressable assay sensor, and (b), disposed operatively adjacent this sensor, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the at least one assay sensor, an ambient electromagnetic field environment which is structured to assist in functionalizing, as a possession on said at least one assay sensor, at least one digitally-addressable assay site which will display an affinity for a selected fluid-assay material.

    Abstract translation: 逐像素，可数字寻址，像素化，前体，流体测定，包括优选在玻璃或塑料衬底上形成的多个像素的有源矩阵微结构，其中每个像素利用低温TFT和Si技术形成 包括（a）至少一个非功能化的，可数字寻址的测定传感器，和（b）可操作地邻近该传感器设置数字寻址和激励的电磁场产生结构，其可选择性地激励以产生在 所述至少一个测定传感器，环境电磁场环境，其被构造为协助在所述至少一个测定传感器上占有功能化至少一个可显示对所选流体测定法的亲和性的可数字寻址的测定位点 材料。

    Method of forming high-luminescence silicon electroluminescence device
    53.
    发明授权
    Method of forming high-luminescence silicon electroluminescence device 失效
    形成高发光硅电致发光器件的方法

    公开(公告)号：US07259055B2

    公开(公告)日：2007-08-21

    申请号：US11066713

    申请日：2005-02-24

    Applicant: Tingkai Li ,  Pooran Chandra Joshi ,  Wei Gao ,  Yoshi Ono ,  Sheng Teng Hsu

    Inventor： Tingkai Li ,  Pooran Chandra Joshi ,  Wei Gao ,  Yoshi Ono ,  Sheng Teng Hsu

    IPC: H01L21/8238

    CPC classification number: H01L31/03046 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).

    Abstract translation: 提供一种用于形成高发光Si电致发光（EL）荧光体的方法，其具有由Si荧光体制成的EL器件。 该方法包括：用Si纳米晶体沉积富含氧的氧化物（SRO）膜，折射率在1.5至2.1范围内，孔隙率在5至20％的范围内; 并且在氧气氛中对SRO膜进行后退火。 DC溅射或PECVD工艺可用于沉积SRO膜。 在一个方面，该方法还包括：HF缓冲氧化物蚀刻（BOE）SRO膜; 并且再次氧化SRO膜，以在SRO膜中的Si纳米晶体周围形成SiO 2层。 在一个方面，SRO膜通过在氧气气氛中退火再次氧化。 以这种方式，在具有1至5纳米（nm）范围内的厚度的Si纳米晶体周围形成SiO 2层。

    High density plasma process for silicon thin films
    54.
    发明授权
    High density plasma process for silicon thin films 失效
    硅薄膜的高密度等离子体工艺

    公开(公告)号：US07186663B2

    公开(公告)日：2007-03-06

    申请号：US10871939

    申请日：2004-06-17

    Applicant: Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  John W. Hartzell

    Inventor： Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  John W. Hartzell

    IPC: H01L21/31

    CPC classification number: C23C16/24 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/049 ,  H01L21/31612

    Abstract: A method is provided for forming a Si and Si—Ge thin films. The method comprises: providing a low temperature substrate material of plastic or glass; supplying an atmosphere; performing a high-density (HD) plasma process, such as an HD PECVD process using an inductively coupled plasma (ICP) source; maintaining a substrate temperature of 400 degrees C., or less; and, forming a semiconductor layer overlying the substrate that is made from Si or Si-germanium. The HD PECVD process is capable of depositing Si at a rate of greater than 100 Å per minute. The substrate temperature can be as low as 50 degrees C. Microcrystalline Si, a-Si, or a polycrystalline Si layer can be formed over the substrate. Further, the deposited Si can be either intrinsic or doped. Typically, the supplied atmosphere includes Si and H. For example, an atmosphere can be supplied including SiH4 and H2, or comprising H2 and Silane with H2/Silane ratio in the range of 0–100.

    Abstract translation: 提供了形成Si和Si-Ge薄膜的方法。 该方法包括：提供塑料或玻璃的低温基材; 提供气氛; 执行高密度（HD）等离子体处理，例如使用电感耦合等离子体（ICP）源的HD PECVD工艺; 保持基板温度在400摄氏度以下; 并且形成由Si或Si-锗制成的衬底上的半导体层。 HD PECVD工艺能够以每分钟大于100埃的速率沉积Si。 衬底温度可以低至50摄氏度。可以在衬底上形成微晶Si，a-Si或多晶Si层。 此外，沉积的Si可以是固有的或掺杂的。 通常，供给的气氛包括Si和H.例如，可以提供包括SiH 4和H 2的气体，或者包含H 2和硅烷，H 2 /硅烷比在0-100范围内。

    Method for fabricating oxide thin films
    55.
    发明授权
    Method for fabricating oxide thin films 失效
    氧化物薄膜的制造方法

    公开(公告)号：US07087537B2

    公开(公告)日：2006-08-08

    申请号：US10801374

    申请日：2004-03-15

    Applicant: Pooran Chandra Joshi ,  Apostolos T. Voutsas

    Inventor： Pooran Chandra Joshi ,  Apostolos T. Voutsas

    IPC: H01L21/26 ,  H01L21/469

    CPC classification number: H01L21/02164 ,  C23C16/402 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32706 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/32105 ,  H01L29/4908

    Abstract: A method for fabricating a thin film oxide is provided. The method includes: forming a substrate; treating the substrate at temperatures equal to and less than 360° C. using a high density (HD) plasma source; and forming an M oxide layer overlying the substrate where M is an element selected from a group including elements chemically defined as a solid and having an oxidation state in a range of +2 to +5. In some aspects, the method uses an inductively coupled plasma (ICP) source. In some aspects the ICP source is used to plasma oxidize the substrate. In other aspects, HD plasma enhanced chemical vapor deposition is used to deposit the M oxide layer on the substrate. In some aspects of the method, M is silicon and a silicon layer and an oxide layer are incorporated into a TFT.

    Abstract translation: 提供了制造薄膜氧化物的方法。 该方法包括：形成衬底; 使用高密度（HD）等离子体源在等于或小于360℃的温度下处理衬底; 以及在衬底上形成M氧化物层，其中M是选自化学上定义为固体并具有+2至+5范围内的氧化态的元素的基团的元素。 在一些方面，该方法使用电感耦合等离子体（ICP）源。 在某些方面，ICP源用于等离子体氧化底物。 在其他方面，使用HD等离子体增强化学气相沉积在基底上沉积M氧化物层。 在该方法的一些方面，M是硅，并且硅层和氧化物层被结合到TFT中。

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