公开(公告)号：US20130160948A1

公开(公告)日：2013-06-27

申请号：US13370765

申请日：2012-02-10

申请人： Hong Shih ,  Lin Xu ,  Rajinder Dhindsa ,  John Daugherty ,  Yan Fang ,  Siwen Li

发明人： Hong Shih ,  Lin Xu ,  Rajinder Dhindsa ,  John Daugherty ,  Yan Fang ,  Siwen Li

IPC分类号： B05C5/02 ,  C23C16/50

CPC分类号： C23C16/50 ,  C23C16/06 ,  C23C16/56

摘要： In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum (Ta).

摘要翻译： 在一个实施例中，等离子体处理装置可以包括等离子体处理室，等离子体区域，能量源和耐腐蚀部件。 等离子体处理室可以保持在真空压力并且可以限制等离子体处理气体。 能量源可以将能量传输到等离子体处理室中，并将至少一部分等离子体处理气体转化成等离子体区域内的等离子体。 耐腐蚀组分可位于等离子体处理室内。 耐腐蚀成分可暴露于等离子体处理气体中，与等离子体区域不一致。 耐腐蚀部件可以包括涂覆有钽（Ta）的外层的不锈钢内层。

公开(公告)号：US20130127124A1

公开(公告)日：2013-05-23

申请号：US13419369

申请日：2012-03-13

申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： B23B31/28 ,  H05K13/00

CPC分类号： H01J37/32577 ,  H01J37/32715 ,  H01L21/6831 ,  Y10T29/49117 ,  Y10T29/53178 ,  Y10T279/23

摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.

摘要翻译： 提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。 根据一个实施例，提供了一种用于等离子体处理的卡盘组件。 卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

公开(公告)号：US20130126476A1

公开(公告)日：2013-05-23

申请号：US13420949

申请日：2012-03-15

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ryan Bise ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la LIera

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ryan Bise ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la LIera

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32642 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32724 ,  H01L21/67109

摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.

摘要翻译： 等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。

公开(公告)号：US20130059448A1

公开(公告)日：2013-03-07

申请号：US13227404

申请日：2011-09-07

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC分类号： H01L21/3065 ,  H01L21/306 ,  C23F1/08

摘要： Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.

摘要翻译： 提供了用于在脉冲等离子体室中处理衬底的实施例。 具有两个腔室的处理装置，由流体连接腔室的板分开，包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频（RF）电源的电压和频率。 脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。 系统控制器可操作以设定参数以调节室之间的物质流动，以辅助负离子蚀刻，以在关闭期间中止余辉期间晶片表面上的过多正电荷，并且辅助重击 在ON期间的底部等离子体。

公开(公告)号：US08262922B2

公开(公告)日：2012-09-11

申请号：US12230236

申请日：2008-08-26

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  James H. Rogers ,  David Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  James H. Rogers ,  David Trussell

IPC分类号： H01L21/302

CPC分类号： H01J37/32623 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32642 ,  Y10S156/914 ,  Y10S156/915

摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.

摘要翻译： 提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。 等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。 热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

公开(公告)号：US20120214310A1

公开(公告)日：2012-08-23

申请号：US13029824

申请日：2011-02-17

申请人： Ben-Li Sheu ,  Rajinder Dhindsa ,  Vinay Pohray ,  Eric A. Husdon ,  Andrew D. Bailey, III

发明人： Ben-Li Sheu ,  Rajinder Dhindsa ,  Vinay Pohray ,  Eric A. Husdon ,  Andrew D. Bailey, III

IPC分类号： H01L21/311 ,  C23F1/08

CPC分类号： H01L21/31116 ,  H01L21/31144

摘要： A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.

摘要翻译： 一种用于蚀刻蚀刻层中的特征的方法。 提供了一种用于设置在蚀刻层上的非晶碳或多晶硅的图案化伪硬掩模的调理，其中调节包括提供包含烃气体的无氟沉积气体，从无氟沉积气体形成等离子体， 超过500伏，并且在图案化伪硬掩模的顶部上形成沉积物。 蚀刻层通过图案化伪硬掩模进行蚀刻。

公开(公告)号：US08216486B2

公开(公告)日：2012-07-10

申请号：US13304893

申请日：2011-11-28

申请人： Rajinder Dhindsa ,  Henry Povolny ,  Jerry K. Antolik

发明人： Rajinder Dhindsa ,  Henry Povolny ,  Jerry K. Antolik

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/3065

CPC分类号： H01J37/32724 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/46 ,  G05D23/192 ,  G05D23/22 ,  H01J37/32522

摘要： A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.

摘要翻译： 用于半导体处理室的温度控制模块包括导热部件主体，部件主体中的一个或多个通道和与其同心的一个或多个管，使得充满气体的空间围绕管。 通过在管中流动传热液体并调节空间中的气体压力，可以精确地控制组件主体的局部温度。 一个或多个加热元件可以布置在每个区域中，并且传热液体可以通过管子，以通过激活加热元件和/或改变空间中的气体的压力来实现每个区域的加热或冷却。

公开(公告)号：US08211324B2

公开(公告)日：2012-07-03

申请号：US12839375

申请日：2010-07-19

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32577

摘要： In a plasma processing chamber, a method for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The method includes providing first RF power to the chuck. The method also includes providing an edge ring RF voltage control arrangement, which is coupled to the edge ring to provide second RF power to the edge ring. The second RF power being delivered to the edge ring has a frequency of about 20 KHz to about 10 MHz, resulting in the edge ring having anedgering potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate, the substrate being processed while the edge ring RF voltage control arrangement is configured to control the second RF power to the edge ring such that a predefined potential difference is maintained between the edge ring and the substrate.

摘要翻译： 在等离子体处理室中，提供了一种处理基板的方法。 基板设置在卡盘上方并被与卡盘电隔离的边缘环包围。 该方法包括向卡盘提供第一RF功率。 该方法还包括提供边缘环RF电压控制装置，其耦合到边缘环以向边缘环提供第二RF功率。 传送到边缘环的第二RF功率具有约20KHz至约10MHz的频率，导致边缘环具有消除电位。 该方法还包括在等离子体处理室内产生等离子体以处理衬底，衬底正在被处理，同时边缘环RF电压控制装置被配置成控制到边缘环的第二RF功率，使得预定的电位差保持在 边缘环和基底。

公开(公告)号：US08012306B2

公开(公告)日：2011-09-06

申请号：US11355458

申请日：2006-02-15

申请人： Rajinder Dhindsa

发明人： Rajinder Dhindsa

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32862

摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism, apparatus and method. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an inner bottom electrode and an outer bottom electrode disposed outside of the inner bottom electrode, wherein the inner bottom electrode is configured to receive a substrate. The plasma processing chamber also includes a top electrode assembly with a top electrode, wherein the top capacitive electrode is disposed directly above the inner and outer bottom electrodes.

摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构，装置和方法。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括底部电极组件，其具有设置在内部底部电极外部的内部底部电极和外部底部电极，其中内部底部电极构造成接收衬底。 等离子体处理室还包括具有顶部电极的顶部电极组件，其中顶部电容电极直接设置在内部和外部底部电极的上方。

公开(公告)号：US08000082B2

公开(公告)日：2011-08-16

申请号：US12405906

申请日：2009-03-17

申请人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

发明人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

IPC分类号： H01L21/683 ,  H01T23/60

CPC分类号： H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.

摘要翻译： 公开了具有介电材料和/或具有变化的厚度，型材和/或形状的空腔的静电卡盘组件。 静电卡盘组件包括导电支架和静电卡盘陶瓷层。 电介质层或插入件位于导电支架和静电卡盘陶瓷层之间。 空腔位于静电卡盘陶瓷层的座面上。 可以可选地将嵌入式极图案并入静电卡盘组件中。 公开了制造静电卡盘组件的方法，是在等离子体处理过程中改进工件上方的磁通场的均匀性的方法。