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1.发明申请Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body 有权温度控制模块采用气体压力来控制液体冷却液和组件体之间的热导率公开(公告)号：US20090111276A1
公开(公告)日：2009-04-30
申请号：US12289657
申请日：2008-10-31
IPC分类号： H01L21/3065 , G05D7/00 , C23C16/513 , G06F19/00 , G05D23/00
CPC分类号： H01J37/32724 , C23C16/4557 , C23C16/45572 , C23C16/46 , G05D23/192 , G05D23/22 , H01J37/32522
摘要： A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.
摘要翻译： 用于半导体处理室的温度控制模块包括导热部件主体，部件主体中的一个或多个通道和与其同心的一个或多个管，使得充满气体的空间围绕管。 通过在管中流动传热液体并调节空间中的气体压力，可以精确地控制组件主体的局部温度。 一个或多个加热元件可以布置在每个区域中，并且传热液体可以通过管子，以通过激活加热元件和/或改变空间中的气体的压力来实现每个区域的加热或冷却。
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2.发明申请TEMPERATURE CONTROL MODULE USING GAS PRESSURE TO CONTROL THERMAL CONDUCTANCE BETWEEN LIQUID COOLANT AND COMPONENT BODY 有权采用气体压力控制液体冷却液和组分体之间的热导率的温度控制模块公开(公告)号：US20120070914A1
公开(公告)日：2012-03-22
申请号：US13304893
申请日：2011-11-28
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32724 , C23C16/4557 , C23C16/45572 , C23C16/46 , G05D23/192 , G05D23/22 , H01J37/32522
摘要： A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.
摘要翻译： 用于半导体处理室的温度控制模块包括导热部件主体，部件主体中的一个或多个通道和与其同心的一个或多个管，使得充满气体的空间围绕管。 通过在管中流动传热液体并调节空间中的气体压力，可以精确地控制组件主体的局部温度。 一个或多个加热元件可以布置在每个区域中，并且传热液体可以通过管子，以通过激活加热元件和/或改变空间中的气体的压力来实现每个区域的加热或冷却。
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3.发明授权Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body 有权温度控制模块采用气体压力来控制液体冷却液和组件体之间的热导率公开(公告)号：US08083855B2
公开(公告)日：2011-12-27
申请号：US12289657
申请日：2008-10-31
IPC分类号： C23C16/00 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/50 , H01L21/3065
CPC分类号： H01J37/32724 , C23C16/4557 , C23C16/45572 , C23C16/46 , G05D23/192 , G05D23/22 , H01J37/32522
摘要： A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.
摘要翻译： 用于半导体处理室的温度控制模块包括导热部件主体，部件主体中的一个或多个通道和与其同心的一个或多个管，使得充满气体的空间围绕管。 通过在管中流动传热液体并调节空间中的气体压力，可以精确地控制组件主体的局部温度。 一个或多个加热元件可以布置在每个区域中，并且传热液体可以通过管子，以通过激活加热元件和/或改变空间中的气体的压力来实现每个区域的加热或冷却。
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4.发明授权Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body 有权温度控制模块采用气体压力来控制液体冷却液和组件体之间的热导率公开(公告)号：US08216486B2
公开(公告)日：2012-07-10
申请号：US13304893
申请日：2011-11-28
IPC分类号： C23C16/00 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/50 , H01L21/3065
CPC分类号： H01J37/32724 , C23C16/4557 , C23C16/45572 , C23C16/46 , G05D23/192 , G05D23/22 , H01J37/32522
摘要： A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.
摘要翻译： 用于半导体处理室的温度控制模块包括导热部件主体，部件主体中的一个或多个通道和与其同心的一个或多个管，使得充满气体的空间围绕管。 通过在管中流动传热液体并调节空间中的气体压力，可以精确地控制组件主体的局部温度。 一个或多个加热元件可以布置在每个区域中，并且传热液体可以通过管子，以通过激活加热元件和/或改变空间中的气体的压力来实现每个区域的加热或冷却。
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公开(公告)号：US09928995B2
公开(公告)日：2018-03-27
申请号：US12820020
申请日：2010-06-21
申请人： Andreas Fischer , Rajinder Dhindsa
发明人： Andreas Fischer , Rajinder Dhindsa
CPC分类号： H01J37/32495 , H01J37/32082 , H01J37/32623 , Y10T29/49718
摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.
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6.发明授权Methods and apparatus for correcting for non-uniformity in a plasma processing system 有权用于校正等离子体处理系统中的不均匀性的方法和装置公开(公告)号：US09230779B2
公开(公告)日：2016-01-05
申请号：US13423279
申请日：2012-03-19
申请人： Sang Ki Nam , Rajinder Dhindsa
发明人： Sang Ki Nam , Rajinder Dhindsa
IPC分类号： H01J37/32 , C23C16/44 , C23C16/455 , C23C16/509 , A23G3/26 , B05B12/00 , B05B13/04 , H01L21/67
CPC分类号： H01J37/32183 , A23G3/26 , B05B12/00 , B05B13/0431 , B05B13/0452 , C23C16/4401 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32009 , H01J37/32082 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32935 , H01J37/32972 , H01J37/3299 , H01L21/67069 , H01L21/6715 , H01L21/67253
摘要： A plasma processing system having a plasma processing chamber comprising at least one of a chamber wall and a chamber liner is disclosed. The plasma processing system includes a plurality of ground straps disposed around a circumference of a chamber surface, the chamber surface being one of the chamber walls and the chamber liner of the plasma processing chamber. The plasma processing system further includes at least a first impedance device coupled to at least a first ground strap of the plurality of ground straps, wherein a second ground strap of the plurality of ground straps is not provided with a second impedance device having the same impedance value as the first impedance device.
摘要翻译： 公开了一种具有等离子体处理室的等离子体处理系统，其包括室壁和腔室衬套中的至少一个。 等离子体处理系统包括围绕室表面的圆周设置的多个接地带，室表面是等离子体处理室的室壁和室衬套之一。 等离子处理系统还包括耦合到多个接地带的至少第一接地带的至少第一阻抗器件，其中多个接地带的第二接地带没有设置具有相同阻抗的第二阻抗器件 值作为第一阻抗器件。
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7.发明授权公开(公告)号：US09184028B2
公开(公告)日：2015-11-10
申请号：US12850559
申请日：2010-08-04
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01L21/67069 , H01L21/67259 , H01L21/6831 , H01L22/26
摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
摘要翻译： 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。
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8.发明授权Integrated capacitive and inductive power sources for a plasma etching chamber 有权用于等离子体蚀刻室的集成电容和感应电源公开(公告)号：US08911590B2
公开(公告)日：2014-12-16
申请号：US11363703
申请日：2006-02-27
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。
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公开(公告)号：US08898889B2
公开(公告)日：2014-12-02
申请号：US13419369
申请日：2012-03-13
IPC分类号： B23P19/00 , H01J37/32 , H01L21/683
CPC分类号： H01J37/32577 , H01J37/32715 , H01L21/6831 , Y10T29/49117 , Y10T29/53178 , Y10T279/23
摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.
摘要翻译： 提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。 根据一个实施例，提供了一种用于等离子体处理的卡盘组件。 卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。
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公开(公告)号：US08709202B2
公开(公告)日：2014-04-29
申请号：US12967750
申请日：2010-12-14
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译： 等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。 为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。 由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。 剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。
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