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    Methods for preventing plasma un-confinement events in a plasma processing chamber
    1.
    发明授权
    Methods for preventing plasma un-confinement events in a plasma processing chamber 有权

    公开(公告)号：US09928995B2

    公开(公告)日：2018-03-27

    申请号：US12820020

    申请日：2010-06-21

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： B23P6/00 ,  H01J37/32

    CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

    摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

    Dual plasma volume processing apparatus for neutral/ion flux control
    3.
    发明授权
    Dual plasma volume processing apparatus for neutral/ion flux control 有权
    用于中性/离子通量控制的双等离子体体积处理装置

    公开(公告)号：US09184028B2

    公开(公告)日：2015-11-10

    申请号：US12850559

    申请日：2010-08-04

    申请人： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

    IPC分类号： C23F1/00 ,  H01L21/306 ,  H01J37/32

    CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

    摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

    摘要翻译： 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

    Integrated capacitive and inductive power sources for a plasma etching chamber
    4.
    发明授权
    Integrated capacitive and inductive power sources for a plasma etching chamber 有权
    用于等离子体蚀刻室的集成电容和感应电源

    公开(公告)号：US08911590B2

    公开(公告)日：2014-12-16

    申请号：US11363703

    申请日：2006-02-27

    申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32

    CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

    摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

    摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

    Chuck assembly for plasma processing
    5.
    发明授权
    Chuck assembly for plasma processing 有权
    用于等离子体处理的卡盘组件

    公开(公告)号：US08898889B2

    公开(公告)日：2014-12-02

    申请号：US13419369

    申请日：2012-03-13

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    IPC分类号： B23P19/00 ,  H01J37/32 ,  H01L21/683

    CPC分类号： H01J37/32577 ,  H01J37/32715 ,  H01L21/6831 ,  Y10T29/49117 ,  Y10T29/53178 ,  Y10T279/23

    摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.

    摘要翻译： 提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。 根据一个实施例，提供了一种用于等离子体处理的卡盘组件。 卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

    Triode reactor design with multiple radiofrequency powers
    7.
    发明授权
    Triode reactor design with multiple radiofrequency powers 有权
    具有多个射频功率的三极管反应器设计

    公开(公告)号：US08652298B2

    公开(公告)日：2014-02-18

    申请号：US13301725

    申请日：2011-11-21

    申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32091 ,  H01J37/32165

    摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

    摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

    METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM
    8.
    发明申请
    METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM 有权
    在等离子体处理系统中选择性地修改射频电流的方法和装置

    公开(公告)号：US20130240482A1

    公开(公告)日：2013-09-19

    申请号：US13423281

    申请日：2012-03-19

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    IPC分类号： C23F1/08 ,  G01N33/00

    CPC分类号： H01J37/32935 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/3299 ,  H01J2237/327 ,  H01J2237/3343

    摘要： Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.

    摘要翻译： 公开了用于修改RF电流路径长度的方法和装置。 装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。 包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。 包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个 的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。