公开(公告)号：US11502230B2

公开(公告)日：2022-11-15

申请号：US16668325

申请日：2019-10-30

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Gyu Jang ,  Chan Seob Shin ,  Seom Geun Lee ,  Ho Joon Lee ,  Jong Hyeon Chae

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/62 ,  H01L33/52

Abstract: A light emitting device including first, second, and third light emitting parts disposed one over another and each including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, a first conductive pattern at least partially disposed between the second and third light emitting parts, the first conductive pattern including a first portion electrically coupled with at least one of the first-type and second-type semiconductor layers of the first and second light emitting parts, and a second portion extending from the first portion and disposed on one surface of the second light emitting part between the second and third light emitting parts, and a second conductive pattern disposed on the third light emitting part and electrically coupled with the first conductive pattern, in which the second conductive pattern at least partially overlaps with the second portion of the first conductive pattern.

公开(公告)号：US11362073B2

公开(公告)日：2022-06-14

申请号：US16782594

申请日：2020-02-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Chan Seob Shin ,  Ho Joon Lee ,  Seong Kyu Jang

IPC: H01L25/13 ,  H01L33/62 ,  H01L33/42 ,  H01L33/08

Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first semiconductor layer, an active layer, and a second semiconductor layer, first, second, and third transparent electrodes in ohmic contact with a lower surface of the first LED stack, an upper surface of the second LED stack, and an upper surface of the third LED stack, respectively, a first electrode pad disposed on the first semiconductor layer of the third LED stack, a lower second electrode pad disposed on the third transparent electrode, and first, second, and third bump pads disposed on the first LED stack and electrically connected to the LED stacks, respectively, and a common bump pad disposed electrically connected to each LED stack, in which an upper surface of the first electrode pad is located at substantially the same elevation as that of the lower second electrode pad.

公开(公告)号：US11211528B2

公开(公告)日：2021-12-28

申请号：US16815823

申请日：2020-03-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Chan Seob Shin ,  Seom Geun Lee ,  Ho Joon Lee

IPC: H01L33/24 ,  H01L33/62 ,  H01L25/075 ,  G02B27/01 ,  G06F1/16

Abstract: A light emitting device for a display including first, second, and third LED stacks, and bump pads disposed on the first LED stack, in which each LED stack includes a first semiconductor layer and a second semiconductor layer exposing a portion of the first semiconductor layer, the first LED stack includes upper through-holes and the second LED stack includes lower through-holes, the bump pads include a first bump pad electrically connected to the second semiconductor layer of the first LED stack, a second bump pad electrically connected to the second semiconductor layer of the second LED stack through the upper through-hole, a third bump pad electrically connected to the second semiconductor layer of the third LED stack through the upper through-hole and the lower through-hole, and a common bump pad electrically connected to the first semiconductor layers of each LED stack in common.

公开(公告)号：US10396250B2

公开(公告)日：2019-08-27

申请号：US15870687

申请日：2018-01-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chan Seob Shin ,  Myoung Hak Yang ,  Yeo Jin Yoon ,  Seom Geun Lee

IPC: H01L33/42 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38

Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

公开(公告)号：US10283498B2

公开(公告)日：2019-05-07

申请号：US15894810

申请日：2018-02-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  So Ra Lee ,  Myoung Hak Yang

IPC: H01L33/06 ,  H01L27/02 ,  H01L33/62 ,  H01L27/15 ,  H01L33/40 ,  H01L25/16 ,  H01L33/32 ,  H01L33/44

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

公开(公告)号：US10193017B2

公开(公告)日：2019-01-29

申请号：US15905224

申请日：2018-02-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32 ,  H01L33/20

Abstract: A light emitting diode includes a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：US20180190864A1

公开(公告)日：2018-07-05

申请号：US15905224

申请日：2018-02-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/14 ,  H01L33/62 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：USD770401S1

公开(公告)日：2016-11-01

申请号：US29537274

申请日：2015-08-24

Applicant: Seoul Viosys Co., Ltd.

Designer： Mae Yi Kim ,  Seom Geun Lee ,  Yeo Jin Yoon

公开(公告)号：US20160218096A1

公开(公告)日：2016-07-28

申请号：US14991829

申请日：2014-07-10

Applicant: SEOUL VIOSYS CO., LTD

Inventor： Seom Geun Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  So Ra Lee ,  Myoung Hak Yang

IPC: H01L27/02 ,  H01L25/16 ,  H01L33/40 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

Abstract translation: 这里公开了具有ESD保护的发光二极管芯片。 示例性实施例提供了一种倒装芯片型发光二极管芯片，其包括在基板上对准的发光二极管部件和设置在基板上并连接到发光二极管部件的反并联二极管部件。 在倒装芯片型发光二极管芯片内，发光二极管部分与反并联二极管部分一起放置，从而提供显示出对静电放电具有很强抵抗力的发光二极管芯片。

公开(公告)号：US09287462B2

公开(公告)日：2016-03-15

申请号：US14791824

申请日：2015-07-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Mae Yi Kim

IPC: H01L29/18 ,  H01L33/42 ,  H01L33/62 ,  H01L27/15 ,  H01L33/08 ,  H01L33/46 ,  H01L33/14 ,  H01L33/44

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.

Abstract translation: 示例性实施例公开了一种包括第一发光单元和设置在基板上的第二发光单元的发光二极管，第一发光单元和第二发光单元彼此间隔开。 发光二极管还包括设置在第一发光单元上的第一氧化锌（ZnO）层，第一ZnO层电连接到第一发光单元。 发光二极管还包括设置在第一发光单元的一部分和第一ZnO层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在互连之间的绝缘层 和第一发光单元的侧面。 电流阻挡层和绝缘层的第一侧彼此连接。