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公开(公告)号：US10431958B1
公开(公告)日：2019-10-01
申请号：US16032997
申请日：2018-07-11
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , Alexander Sztein , Po Shan Hsu , James W. Raring
IPC: H01S5/00 , H01S5/20 , H01S5/22 , H01L33/16 , H01S5/022 , H01S5/028 , H01S5/32 , H01L29/20 , H01S5/042 , H01S5/343 , H01S5/02 , H01L23/00 , H01L33/50
Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between the reference crystal orientation and the selected direction of the first handle substrate. A processed region is formed overlying each of the substrates.
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公开(公告)号：US20190179016A1
公开(公告)日：2019-06-13
申请号：US16011443
申请日：2018-06-18
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Melvin McLaurin , Paul Rudy , Vlad Novotny
CPC classification number: G01S17/10 , F21K9/64 , F21V29/70 , G01S7/4817 , G01S7/487 , G01S17/023 , G01S17/89 , G01S17/936 , H01S5/0085 , H01S5/02469
Abstract: The present disclosure provides a mobile machine including a laser diode based lighting system having an integrated package holding at least a gallium and nitrogen containing laser diode and a wavelength conversion member. The gallium and nitrogen containing laser diode is configured to emit a first laser beam with a first peak wavelength. The wavelength conversion member is configured to receive at least partially the first laser beam with the first peak wavelength to excite an emission with a second peak wavelength that is longer than the first peak wavelength and to generate the white light mixed with the second peak wavelength and the first peak wavelength. The mobile machine further includes a light detection and ranging (LIDAR) system configured to generate a second laser beam and manipulate the second laser beam to sense a spatial map of target objects in a remote distance.
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53.发明申请公开(公告)号：US20190109432A1
公开(公告)日：2019-04-11
申请号：US16199974
申请日：2018-11-26
Applicant: Soraa Laser Diode, Inc.
Inventor： Alexander Sztein , Melvin McLaurin , Po Shan Hsu , James W. Raring
Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.
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公开(公告)号：US10186841B1
公开(公告)日：2019-01-22
申请号：US15887217
申请日：2018-02-02
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
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公开(公告)号：US09972974B1
公开(公告)日：2018-05-15
申请号：US15410231
申请日：2017-01-19
Applicant: Soraa Laser Diode, Inc.
Inventor： Po Shan Hsu , Melvin McLaurin , Thiago P. Melo , James W. Raring
CPC classification number: H01S5/34333 , H01S5/0425 , H01S5/20 , H01S5/2031 , H01S5/22 , H01S5/2201 , H01S5/222 , H01S5/3063 , H01S5/3086 , H01S5/3202 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01S5/3219 , H01S5/34346 , H01S2304/02 , H01S2304/04
Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.
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Patent Agency Ranking
公开(公告)号：US09882353B2
公开(公告)日：2018-01-30
申请号：US15356302
申请日：2016-11-18
Applicant: Soraa Laser Diode, Inc.
Inventor： Po Shan Hsu , Melvin McLaurin , James W. Raring , Alexander Sztein , Benyamin Buller
CPC classification number: H01S5/34333 , H01S5/0202 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/22 , H01S2304/00
Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.
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公开(公告)号：US09755398B2
公开(公告)日：2017-09-05
申请号：US15173441
申请日：2016-06-03
Applicant: Soraa Laser Diode, Inc.
Inventor： Alexander Sztein , Melvin McLaurin , Po Shan Hsu , James W. Raring
CPC classification number: H01S5/0203 , H01S5/0202 , H01S5/0205 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/3202 , H01S5/34333 , H01S5/34346
Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.
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公开(公告)号：US20170063047A1
公开(公告)日：2017-03-02
申请号：US15351326
申请日：2016-11-14
Applicant: Soraa Laser Diode, Inc.
Inventor： Dan Steigerwald , Melvin McLaurin , Eric Goutain , Alexander Sztein , Po Shan Hsu , Paul Rudy , James W. Raring
CPC classification number: H01S5/4087 , H01S5/005 , H01S5/0202 , H01S5/0203 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/0218 , H01S5/0425 , H01S5/22 , H01S5/34333 , H01S5/4012 , H01S5/4031 , H01S5/4056 , H01S5/4093
Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.
Abstract translation: 多发射体激光二极管器件包括从载体晶片分离的载体芯片。 载体芯片具有长度和宽度，宽度限定第一间距。 该器件还包括从衬底转移到载体芯片并在键合区附接到载体芯片的多个外延台面区域。 每个外延台面区域以基本上平行的构造布置在载体芯片上，并且以限定相邻外延台面区域之间的距离的第二间距定位。 多个外延台面区域中的每一个包括外延材料，其包括n型包层区域，具有至少一个有源层区域的有源区域和p型包层区域。 该器件还包括一个或多个激光二极管条纹区域，每个区域具有形成空腔区域的一对小面。
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公开(公告)号：US09520697B2
公开(公告)日：2016-12-13
申请号：US14600506
申请日：2015-01-20
Applicant: Soraa Laser Diode, Inc.
Inventor： Dan Steigerwald , Melvin McLaurin , Eric Goutain , Alexander Sztein , Po Shan Hsu , Paul Rudy , James W. Raring
CPC classification number: H01S5/4087 , H01S5/005 , H01S5/0202 , H01S5/0203 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/0218 , H01S5/0425 , H01S5/22 , H01S5/34333 , H01S5/4012 , H01S5/4031 , H01S5/4056 , H01S5/4093
Abstract: A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
Abstract translation: 一种用于制造多发射体激光二极管器件的方法，包括提供具有表面区域并形成覆盖在表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，活性区域包括至少一层有源层， n型包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。
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60.发明授权公开(公告)号：US09502859B1
公开(公告)日：2016-11-22
申请号：US14593259
申请日：2015-01-09
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass
CPC classification number: H01S5/3202 , H01S5/0422 , H01S5/2009 , H01S5/2031 , H01S5/2205 , H01S5/3063 , H01S5/3211 , H01S5/3216 , H01S5/32308 , H01S5/32341 , H01S5/34333 , H01S5/34386 , H01S2301/173
Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
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