Abstract:
An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.
Abstract:
An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.
Abstract:
A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.
Abstract:
An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.
Abstract:
A bulk-acoustic wave resonator includes: a membrane layer disposed on a substrate and forming a cavity; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer, and including a frame part disposed at an edge of an active area and having a thickness greater than that of a portion of the upper electrode disposed in a central portion of the active area; and a frequency adjusting layer disposed on the piezoelectric layer and the upper electrode. The frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than that of other portions of the frequency adjusting layer. The frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode.
Abstract:
A bulk-acoustic wave filter device includes: a lower electrode layer disposed on the substrate; a bonding part disposed on the lower electrode layer, at an edge of the substrate; a ground part spaced apart from the bonding part; and a flow suppressing part disposed between the bonding part and the ground part, and offset with respect to the bonding part and the ground part.
Abstract:
A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer provided between the first electrode and the second electrode. Either one or both of the first electrode and the second electrode include a molybdenum-tungsten alloy having a weight ratio of molybdenum to tungsten in a range of 3:1 to 1:3.
Abstract:
A resonator includes a resonating portion including a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode; and a frame provided at an outer edge of the resonating portion, at least a portion of the frame covering an outer end portion of the second electrode.
Abstract:
Embodiments of the invention provide a composite powder including a core layer disposed at the center thereof and formed of a reflecting material, a first coating layer formed on a surface of the core layer, and a second coating layer formed on a surface of the first coating layer and having a refractive index higher than that of the first coating layer. According to at least one embodiment, high whiteness is more effectively implemented through a bezel in a thin film shape by forming a bezel layer and a reflecting layer of a touch sensor.
Abstract:
Embodiments of the invention provide a touch sensor including a substrate, and an electrode on the substrate. The electrode includes a first diffusion barrier contacting the substrate, an intermediate layer formed on the first diffusion barrier, and a second diffusion barrier formed on the intermediate layer. According to an embodiment of the invention, corrosion of the intermediate layer and performance degradation caused by diffusion may be prevented by forming the intermediate layer on the first diffusion barrier contacting the substrate and forming the second diffusion barrier on the intermediate layer.