Patent search ap:("Samsung Electronics Co. Page Ltd.") AND inv:"Jihong Kim"

51.

发明授权
Storage device for providing event data and operation method of storage device 有权

公开(公告)号：US12189475B2

公开(公告)日：2025-01-07

申请号：US18195607

申请日：2023-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihong Kim , Yongkoo Jeong , Jooyoung Kim

IPC: G06F11/10 , G06F11/07 , G06F11/30 , G06F13/16 , G06F13/28

Abstract: A storage device includes a non-volatile memory device that includes memory blocks each including one or more memory cells, a combo integrated circuit (IC) that includes a temperature sensor and a memory, and a controller that is connected with the combo IC through first channels and controls the non-volatile memory device to write or read data in or from selected memory cells. When the controller determines that a first event occurs based on temperature data read from the combo IC, the controller records first event data in the memory of the combo IC. In a first operation mode, the combo IC outputs the first event data to the controller through the first channels. In a second operation mode, under control of an external host, the combo IC outputs the first event data to the external host through second channels different from the first channels.

52.

发明公开
VERTICAL TYPE MEMORY DEVICE 审中-公开

公开(公告)号：US20240212756A1

公开(公告)日：2024-06-27

申请号：US18390258

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunmook Choi , Jihong Kim

IPC: G11C16/04 , H01L25/065 , H10B41/10 , H10B41/27 , H10B41/35 , H10B43/10 , H10B43/27 , H10B43/35 , H10B80/00

CPC classification number: G11C16/0483 , H01L25/0652 , H10B41/10 , H10B41/27 , H10B41/35 , H10B43/10 , H10B43/27 , H10B43/35 , H10B80/00 , H01L2225/06506

Abstract: A vertical type memory device includes a first pillar structure in a channel hole inside a word line mold, and a second pillar structure in a string select line hole overlapping the channel hole inside a string select line mold. The first pillar structure includes a first gate insulating layer and a cell channel layer on an inner wall of the channel hole, a variable resistance layer on one side of the cell channel layer, a first filling insulating layer filling the channel hole, and a connection pad in an upper portion of the first filling insulating layer. The second pillar structure includes a second gate insulating layer on an inner wall of the string select line hole, a select channel layer on one side of the second gate insulating layer, and a second filling insulating layer filling the string select line hole on the select channel layer.

53.

发明授权
Heat dissipation device formed of nonmetallic material and electronic device including the same 有权

公开(公告)号：US11497141B2

公开(公告)日：2022-11-08

申请号：US16577835

申请日：2019-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungha Koo , Kuntak Kim , Jihong Kim , Hongki Moon , Hajoong Yun , Haejin Lee , Seyoung Jang

IPC: H05K7/20 , F28F21/06 , F28D15/04

Abstract: A heat dissipation device is provided. The heat dissipation device includes a container including a first plate, and a second plate spaced apart from the first plate to define an interior space, at least one filler disposed between the first plate and the second plate and configured to support the first plate and the second plate, a wick layer located on an inner wall defined in the interior space by the first plate or the second plate, and a working fluid configured to flow in the interior space in a gaseous state, and flow in the wick layer in a liquefied state, wherein the container further includes a fluoride-based polymer having a predetermined gas permeability.

54.

发明授权
Module substrate and semiconductor module including the same 有权

公开(公告)号：US11490509B2

公开(公告)日：2022-11-01

申请号：US17358800

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunki Yun , Kwangkyu Bang , Jihong Kim , Eunji Yu , Kyungjae Kim , Yusuf Cinar

IPC: H05K1/02 , H05K1/11 , H05K1/14

Abstract: A module substrate for a semiconductor module including a wiring substrate having an upper surface and a lower surface opposite to each other and including a wiring formed therein, the wiring substrate having at least one through groove in at least one sidewall and extending in a thickness direction, and a through-groove test terminal including at least one contact pad, a surface of the contact pad being exposed from an inner wall of the through-groove, the contact pad being spaced apart from a vertical plane extending from the sidewall of the wiring substrate may be provided.

55.

发明授权
Cooler with wireless charging function for mobile electronic device 有权

公开(公告)号：US11243583B2

公开(公告)日：2022-02-08

申请号：US16726401

申请日：2019-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghoon Lee , Yongbum Kim , Jihong Kim , Sangwoo Park , Minchang Shim , Sangwon Lee , Sungbok Lee , Changhyung Lee , Hanshil Choi

IPC: G06F1/20 , H05K7/20 , H02J50/40 , H02J50/10 , H02J7/00

Abstract: Disclosed is a cooler according to various embodiments of the disclosure. The cooler may have an electronic device mounted thereon, which includes a front surface on which a display area is formed and a rear surface opposite the front surface. The cooler may include a housing including a first surface, a second surface opposite the first surface, and a third surface that surrounds an interior space between the first surface and the second surface, the first surface including a seating area on which the rear surface of the electronic device is seated and a recess area spaced apart from the rear surface of the electronic device by a predetermined gap, and a fan disposed in the interior space of the housing and including a rotary shaft formed in a direction toward the first surface from the second surface.

56.

发明授权
Storage device and access method thereof 有权

公开(公告)号：US11195583B2

公开(公告)日：2021-12-07

申请号：US16736881

申请日：2020-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihong Kim , Kyungduk Lee , Young-Seop Shim , Kirock Kwon , Myoung Seok Kim

IPC: G11C16/04 , G11C16/08 , G11C16/10 , G11C16/34 , G11C16/26 , G06F3/06 , G06F12/0804

Abstract: A method of accessing a nonvolatile memory device which includes a memory block where semiconductor layers including word lines are stacked includes receiving a write request for the memory block, determining whether the write request corresponds to one or more leading word lines, programming, in response to the write request determined as corresponding to the leading word lines, memory cells connected thereto in a first program mode, and programming, when the write request is determined as corresponding to a following word line different from the leading word lines, memory cells connected to the following word line in a second program mode. The second program mode is performed with a second program parameter including at least one of a number of program pulses, a number of program verify pulses, a program start voltage, and a program end voltage that is different from a corresponding first parameter of the first program mode.

57.

发明申请
AIR CONDITIONER 有权

公开(公告)号：US20210215389A1

公开(公告)日：2021-07-15

申请号：US17144495

申请日：2021-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunghyun CHUN , Junseok Kwon , Jihong Kim , Moonsun Shin , Wonhee Lee , Changsik Lee , Jaerim Jung , Changwoo Jung , Seoyoung Cho

IPC: F24F13/20 , F16H25/14 , F24F1/005

Abstract: Disclosed is an air conditioner including a main body, a panel assembly configured to cover a front surface of the main body and coupled to the main body, and a cam assembly including a cam and disposed below the panel assembly, wherein the cam includes a cam contact surface formed along a rotation direction of the cam, the cam contact surface includes a first contact portion and a second contact portion formed to be in contact with the panel assembly at different heights, and the panel assembly is configured to be detachable from the main body by moving up and down with the rotation of the cam.