摘要:
A lithographic projection apparatus contains a projection system configured to project a patterned beam of radiation onto a target portion of a substrate. The projection system contains one or more optically active mirrors and heat shields located to intercept heat radiation to or from the mirrors and/or their support. The heat shields are actively cooled and the mirrors and the heat shields and the mirrors are supported separately on a support frame to reduce vibration of the mirrors due to active cooling. The heat shields may include heat shields that intercept heat radiation to or from the support and/or respective heat shields for individual mirrors that intercept heat radiation to or from the mirrors.
摘要:
An arrangement for use in a projection exposure tool (100) for microlithography comprises a reflective optical element (10; 110) and a radiation detector (30; 32; 130). The reflective optical element (10; 110) comprises a carrier element (12) guaranteeing the mechanical strength of the optical element (10; 110) and a reflective coating (18) disposed on the carrier element (12) for reflecting a use radiation (20a). The carrier element (12) is made of a material which upon interaction with the use radiation (20a) emits a secondary radiation (24) the wavelength of which differs from the wavelength of the use radiation (20a), and the radiation detector (30; 32; 130) is configured to detect the secondary radiation (24).
摘要:
An apparatus for changing an intensity distribution of a light within an illumination field includes a structure configured to be positioned within the illumination field so that a first portion of the light within the illumination field impinges upon the structure, where the structure is translucent or opaque to a wavelength of the light. The apparatus also includes an actuator configured to cause a movement of a first portion of the structure so that a second portion of the light within the illumination field impinges upon the structure. The light within the illumination field is produced by a source configured so that a pupil fill of a beam of the light is uncontrolled, but the beam of the light downstream of the structure is substantially telecentric before and after the movement of the first portion of the structure. Related methods are also presented.
摘要:
The mask in a lithographic apparatus is clamped on a first side using a first clamping device and on a second side, different from the first side, using a second clamping device. The clamping forces are preferably applied using thin membranes. The first clamp clamps the substrate in directions parallel to the plane of the patterning device, perpendicular to the plane of the patterning device and rotationally. The second clamping device clamps the patterning device only in directions parallel to the plane of the substrate.
摘要:
An immersion lithographic apparatus has a plurality of substrate holders arranged to hold substrates, each substrate holder having a conduit therein for passing a temperature control fluid. The thermal responses of the different substrate holders are calibrated and flow rates calculated and used so that all the holders return to a predetermined temperature in the same time.
摘要:
A lithographic apparatus has a patterning support constructed to support a patterning device and a substrate support constructed to support a substrate. At least one of the patterning support and the substrate support is moved by an electromagnetic actuator. The actuator has a first part and a second part that are movable relative to each other. The first part has a coil structure, and the second part including a plurality of permanent magnets interacting with the coil structure. The second part is provided with a cooling structure arranged adjacent the permanent magnets. Cooling ducts are arranged between adjacent permanent magnets, or on a side of the permanent magnets facing the coil structure.
摘要:
A measurement unit to determine a position in a first and second dimension includes a diffraction type encoder and an interferometer. The diffraction type encoder determines by means of a diffraction on a first and a second diffraction grating the position in the first dimension of the second grating with respect to the first grating, The interferometer determines the position in the second dimension of a mirror. The measurement unit includes a combined optical unit to transfer an encoder measurement beam as well as an interferometer measurement beam. Further, the measurement unit may include a combined light source for the encoder as well as the interferometer. One of the first and second diffraction gratings may further show some degree of zero order reflection to provide the mirror of the interferometer.
摘要:
In order to improve the productivity of a lithographic apparatus, a stage apparatus to hold two patterning devices is described. The patterning devices are arranged such that the distance between the patterns in the scanning direction corresponds to the length of the pattern in the scanning direction. By doing so, an improved exposure sequence may be performed by exposing a first die with a first pattern, skipping a second die adjacent to the first die, and exposing a third die adjacent to the second die using a second pattern.
摘要:
A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.
摘要:
A liquid immersion lithography system includes projection optics and a showerhead. The projection optics are configured to expose a substrate with a patterned beam. The showerhead includes a first nozzle and a second nozzle that are configured to be at different distances from a surface of the substrate during an exposure operation.