摘要:
An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1≦x≦2.2, 1.0≦y≦2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Cr, Mo, W, Mn and Re, and X includes O.
摘要:
A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.
摘要:
A probe memory device carries out positioning with the use of a servo pattern provided in a servo area on a recording medium, and the recording medium and a probe head section are reciprocatingly moved (scan-moved) by vibration at a specific frequency in a one-axis direction. At this time, based on information from the servo area, relative position information between the recording medium and the probe head section is acquired, the relative position information is processed at a control section, and then, feedback control is carried out for carrying out position correction relative to an actuator.
摘要:
A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.
摘要:
A nonvolatile latch circuit includes: a first gate part controlling to load or intercept an input signal based on a gate signal; a first logic gate functioning as an inverter or a gate outputting a constant voltage in response to the first control signal; a second logic gate functioning as an inverter or a gate outputting the constant voltage in response to the first control signal; a second gate part controlling to load or intercept the output of the second logic gate based on an inverted signal of the gate signal and sends the output of the second logic gate to an first input terminal of the first logic gate; and first and second injection type MTJ elements provided between the driving power supply and the first and second logic gates and changing in resistance depending upon a current flow direction.
摘要:
A motion reduction apparatus has an orthorhombic shaped floating main body (11), a plumb plate supported vertically on one side section of the floating main body by stay members (13), and flow sections (15) for flooding with incoming water are provided between the floating main body and the plumb plate in such a way that an upper end section of the plumb plate is at about the same height as the bottom surface of the floating main body.
摘要:
A method of dyeing a lens, comprises the steps of: (a) applying a dyeing ink containing a sublimable dye onto a base material to produce a dyeing base body; (b) placing the dyeing base body and the lens so that a dye-applied surface of the dyeing base body and a surface of the lens to be dyed face each other in noncontact relation, and heating the dyeing base body under substantially a vacuum condition to sublimate and deposit the applied dye on the lens; and (c) heating the dye deposited surface of the lens by irradiation of infrared rays from one direction to fix the deposited dye on the lens.
摘要:
There is proposed a nonvolatile information recording/reproducing device with low power consumption and high thermal stability. The information recording/reproducing device according to an aspect of the present invention includes a recording layer, and mechanism for recording information by generating a phase change in the recording layer while applying a voltage to the recording layer. The recording layer is comprised one of a Wolframite structure and a Scheelite structure.
摘要:
There is provided a magnetic material having a TbCu.sub.7 phase as a principal phase and excellent in residual magnetic flux density. This magnetic material is formed of a composition represented by a general formula: R1.sub.x R2.sub.y B.sub.z A.sub.u M.sub.100-x-y-z-u wherein R1 is at least one element selected from rare earth elements including Y; R2 is at least one element selected from Zr, Hf and Sc; A is at least one element selected from H, N, C and P; M is at least one element selected from Fe and Co; x, y, z and u represent are atomic percent individually defined as 2.ltoreq.x, 2.ltoreq.x+y.ltoreq.20, 0.001.ltoreq.z.ltoreq.10, 0.ltoreq.u.ltoreq.20; and a principal phase of the magnetic material having a TbCu.sub.7 type crystal structure.
摘要:
A permanent magnet is composed of a magnetic material which is represented by a general formula R1.sub.x R2.sub.y A.sub.z Co.sub.u Fe.sub.100-x-y-z-u (where R1 is at least one element selected from rare earth elements, R2 is at least one element selected from the group consisting of Sc, Zr and Hf, A is at least one element selected from the group of C, N and P, and x,y,z and u are atomic percent defined as 2.ltoreq.x, 4.ltoreq.x+y.ltoreq.20, 0.ltoreq.z.ltoreq.20, 0.ltoreq.u.ltoreq.70), wherein the material includes a principal phase of TbCu.sub.7 structure and .alpha.-Fe, a peak width at half height of the main peak of X-ray diffraction of the principal phase obtained by using Cu-K.alpha. X-rays with the resolution of 0.02.degree. or less is about 0.8.degree. or less, and a ratio of peak intensity between the principal phase and .alpha.-Fe satisfies a relation that the value of I.sub.Fe /(I.sub.p +I.sub.Fe) is about 0.4 or less where I.sub.p is the peak intensity of main peak of X-ray diffraction of the principal phase obtained by using Cu-K.alpha. X-rays and I.sub.Fe is that of .alpha.-Fe.