公开(公告)号：US06743368B2

公开(公告)日：2004-06-01

申请号：US10062952

申请日：2002-01-31

申请人： Heon Lee

发明人： Heon Lee

IPC分类号： B32B300

CPC分类号： B29C59/022 ,  B29C2059/023 ,  B81C99/009 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24579 ,  Y10T428/24595

摘要： A wide-area nano-size imprinting stamp is disclosed. The wide-area nano-size imprinting stamp includes a substrate having a base surface upon which is formed a plurality of micro-features. Each micro-feature includes a plurality of spacers disposed on opposed side surfaces thereof. The spacers extend laterally outward of the opposed side surfaces and the micro-features and the spacers extend outward of the base surface. The micro-features and the spacers are selectively etched to differing heights to define an imprint stamp having an imprint profile. The imprint stamps can be formed on substantially all of a useable area of the substrate and can have complex shapes that vary among the imprint stamps. The imprint stamps can be used as a template for transferring the imprint profile to a mask layer in which the imprint profile will be replicated.

摘要翻译： 公开了一种广域纳米尺寸印记。 广域纳米尺寸压印印模包括具有基面的基底，在其上形成多个微特征。 每个微特征包括设置在其相对侧表面上的多个间隔物。 间隔件在相对的侧表面的横向外侧延伸，并且微特征和间隔件从基部表面向外延伸。 微特征和间隔物被选择性地蚀刻到不同的高度以限定具有印记轮廓的压印印模。 压印邮票可以形成在基板的基本上所有的可用区域上，并且可以具有在压印邮票之间变化的复杂形状。 印记戳可用作模板，用于将压印轮廓传送到掩模层，在该掩模层中可以复制压印轮廓。

公开(公告)号：US06670628B2

公开(公告)日：2003-12-30

申请号：US10116507

申请日：2002-04-04

申请人： Heon Lee ,  Dennis M. Lazaroff

发明人： Heon Lee ,  Dennis M. Lazaroff

IPC分类号： H01L4700

CPC分类号： H01L45/06 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16

摘要： A low heat loss and small contact area electrode structure for a phase change media memory device is described. The memory device includes a composite electrode that includes a dielectric mandrel that is connected with a substrate and having a tapered shape that terminates at a vertex. An electrically conductive material conformally covers the dielectric mandrel and terminates at a tip. A first dielectric layer covers all of the composite electrode except an exposed portion of the composite electrode that is adjacent to the tip. A phase change media is in contact with the exposed portion. The exposed portion is only a small percentage of an overall surface area of the composite electrode so that a contact footprint between the exposed portion and the phase change media is small relative to a surface area of the phase change media and Joule heat transfer from the phase change media into the composite electrode is reduced.

摘要翻译： 描述了用于相变介质存储装置的低热损失和小的接触面积电极结构。 存储器件包括复合电极，该复合电极包括与基底连接并具有终止于顶点的锥形形状的介质心轴。 导电材料保形地覆盖介电心轴并终止于尖端。 除了与尖端相邻的复合电极的暴露部分之外，第一电介质层覆盖所有复合电极。 相变介质与暴露部分接触。 暴露部分仅是复合电极的整个表面积的一小部分，使得暴露部分和相变介质之间的接触面积相对于相变介质的表面积较小，并且来自相的焦耳热传递 将介质转化成复合电极减少。

公开(公告)号：US06664193B2

公开(公告)日：2003-12-16

申请号：US10264569

申请日：2002-10-03

申请人： Heon Lee ,  Chung-Ching Yang ,  Peter Hartwell

发明人： Heon Lee ,  Chung-Ching Yang ,  Peter Hartwell

IPC分类号： H01L21302

CPC分类号： B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/149 ,  H01L21/764 ,  Y10S977/723

摘要： A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

公开(公告)号：US06573192B1

公开(公告)日：2003-06-03

申请号：US09667053

申请日：2000-09-21

申请人： Heon Lee

发明人： Heon Lee

IPC分类号： H01L2131

CPC分类号： H01L21/31111 ,  H01L21/3105 ,  H01L21/31662 ,  H01L21/823462

摘要： A method of forming on a common semiconductor body (substrate) silicon oxide layers of different thicknesses uses plasma treatment on selected portions of an original thermally grown silicon oxide layer. The plasma treated portions are completely etched away to expose a portion of the surface of the body while non-selected portions of the original silicon oxide layer are little effected by the etch. A thermally grown second layer of silicon oxide is formed with the result being that the silicon oxide layer formed in the exposed portions of the body is thinner than elsewhere. The use of dual thickness silicon oxide layers is useful with dynamic random access memories (DRAMs) as gate oxide layers of field transistors of memory cells of the DRAM typically require different electrical characteristics than transistors of support circuitry of the DRAM.

摘要翻译： 在公共半导体本体（衬底）上形成不同厚度的氧化硅层的方法在原始热生长氧化硅层的选定部分上使用等离子体处理。 等离子体处理的部分被完全蚀刻掉，以露出主体表面的一部分，而原始氧化硅层的未被选择的部分几乎不受蚀刻影响。 形成热生长的第二层氧化硅，其结果是形成在身体的暴露部分中的氧化硅层比其它地方薄。 由于DRAM的存储器单元的场晶体管的栅极氧化层通常需要与DRAM的支持电路的晶体管不同的电特性，所以使用双重厚度的氧化硅层对于动态随机存取存储器（DRAM）是有用的。

公开(公告)号：US06537846B2

公开(公告)日：2003-03-25

申请号：US09823550

申请日：2001-03-30

申请人： Heon Lee ,  Chung Ching Yang

发明人： Heon Lee ,  Chung Ching Yang

IPC分类号： H01L2106

CPC分类号： H01L21/2007 ,  H01L21/76251

摘要： A selenidation reaction for bonding one or more active substrates to a base substrate is disclosed. A bonded-substrate is fabricated by forming a first multi-stacked layer of selenium and indium on a bonding surface of an active substrate and forming a second multi-stacked layer of selenium and indium on a mounting surface of a base substrate. The first and second multi-stacked layers are placed into contact with each other with substantially no pressure. Then the active substrate and the base substrate are bonded to each other by annealing them in an inert ambient to form an indium-selenium compound bond layer that adhesively bonds the substrates to each other. The annealing can occur at a lower temperature than prior wafer-bonding processes and the first and second multi-stacked layers can be deposited over a wide range of relatively low temperatures including room temperature. Additionally, tellurium can be added to the selenium of either one or both of the first and second multi-stacked layers to reduce the annealing temperature and to form an indium-selenium-tellurium compound bond layer that adhesively bonds the substrates to each other. Elemental compounds or amorphous compounds can be used for the materials of the first and second multi-stacked layers to form a polycrystalline or amorphous compound bond layer respectively. One advantage of the compound bond layer is that it can be dissolved using a selective wet etching material so that the active substrate and the base substrate can be non-destructively detached from each other.

公开(公告)号：US06228277B1

公开(公告)日：2001-05-08

申请号：US09172456

申请日：1998-10-14

申请人： Avinoam Kornblit ,  Tseng-Chung Lee ,  Heon Lee ,  Helen Louise Maynard

发明人： Avinoam Kornblit ,  Tseng-Chung Lee ,  Heon Lee ,  Helen Louise Maynard

IPC分类号： H01L2166

CPC分类号： H01L22/26 ,  G01B11/0683 ,  H01J37/32935 ,  H01J2237/334

摘要： The specification describes an interferometric in-situ end point detection technique for plasma etching in which the end point is predicted before any overetching occurs. It is based on the recognition that the wavelength of the monitoring beam can be selected so that only a single interferometric fringe appears before clearing. Knowing there is only one fringe, detection is simplified and the etching process can be terminated while a finite but small thickness of the layer remains. This allows etching partial thicknesses of layers. It also allows a two step etch process wherein the etch chemistry can be changed to a highly selective etch to complete clearing of the layer.

摘要翻译： 本说明书描述了用于等离子体蚀刻的干涉式原位终点检测技术，其中在任何过蚀刻发生之前预测终点。 基于这样的认识，可以选择监测光束的波长，使得在清除之前仅出现单个干涉条纹。 知道只有一个边缘，检测被简化，并且蚀刻过程可以终止，同时层的有限但较小的厚度保留。 这允许蚀刻层的部分厚度。 它还允许两步蚀刻工艺，其中蚀刻化学物质可以改变为高选择性蚀刻以完成层的清除。

公开(公告)号：US06089735A

公开(公告)日：2000-07-18

申请号：US998786

申请日：1997-12-29

申请人： Heon Lee

发明人： Heon Lee

IPC分类号： F21S8/10 ,  B60Q1/00 ,  B60Q1/04 ,  F21V19/00 ,  F21Q1/00

CPC分类号： B60Q1/007 ,  F21S48/1104

摘要： A removable bulb assembly is provided for head lamp structures for automobiles. An upper surface of the housing of the structure has an opening through which the bulb assembly can be inserted or removed. A similar opening is provided in an upper surface of a reflector within the housing. The bulb assembly is removably mounted within the reflector. When necessary, the bulb assembly is removed from the housing to replace a bulb of the assembly.

摘要翻译： 为汽车的头灯结构提供了可移除的灯泡组件。 该结构的壳体的上表面具有开口，灯泡组件可以通过该开口插入或移除。 类似的开口设置在壳体内的反射器的上表面中。 灯泡组件可拆卸地安装在反射器内。 必要时，将灯泡组件从外壳中取出以更换组件的灯泡。

公开(公告)号：US6012550A

公开(公告)日：2000-01-11

申请号：US994265

申请日：1997-12-19

申请人： Heon Lee

发明人： Heon Lee

IPC分类号： F16H61/00 ,  F16H57/04 ,  F16H59/72 ,  F16K31/64 ,  F01M5/00

CPC分类号： F16H57/0412 ,  F16H57/0413 ,  F16H59/72

摘要： A bypass device for ATF (automatic transmission fluid) is disclosed. The bypass device of this invention has a valve housing with a plurality of ports. A spring-biased valve spool is movably received in the housing, while the thermal expansion bar is inserted into one end of the spool at a position opposite to a valve spring. The expansion bar selectively and thermally expands in accordance with the ATF temperature, thus moving the spool with two internal passages and one bypass passage being selectively formed in the valve housing. The device allows ATF to selectively bypass an ATF cooler in the event the ATF temperature is substantially low enough to allow the ATF to be free from any requirement of cooling, thus allowing the ATF at an appropriate temperature to circulate in the automatic transmission.

摘要翻译： 公开了一种用于ATF（自动变速器油）的旁通装置。 本发明的旁路装置具有带多个端口的阀壳体。 弹簧偏压的阀芯可移动地容纳在壳体中，而热膨胀杆在与阀弹簧相对的位置插入阀芯的一端。 膨胀杆根据ATF温度选择性地和热膨胀，从而使两个内部通道和一个旁通通道选择性地形成在阀壳体中移动。 该装置允许ATF选择性地旁路ATF冷却器，在ATF温度基本上足够低以允许ATF不需要冷却的情况下，从而允许ATF在适当温度下在自动变速器中循环。

公开(公告)号：US07522446B2

公开(公告)日：2009-04-21

申请号：US10698501

申请日：2003-10-31

申请人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

发明人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： H01L27/222 ,  G11C11/16 ,  G11C11/1675

摘要： A method for making magnetic random access memories (MRAM) which reduces heat conduction from memory cells in an MRAM array. The method uses grid of bit and word lines for selectively accessing data in the array of magnetic memory cells. The grid has a plurality of thermally and electrically resistive portions which provide connections to the magnetic memory cells. The resistive portions increase the thermal resistance for heat generated by each memory cell and during operation provide localized heating of active memory cells to ease cell state switching.

摘要翻译： 一种用于制造磁性随机存取存储器（MRAM）的方法，其减少MRAM阵列中的存储器单元的热传导。 该方法使用位和字线的网格来选择性地访问磁存储单元阵列中的数据。 栅极具有多个电阻和电阻部分，其提供到磁存储器单元的连接。 电阻部分增加了由每个存储单元产生的热的热阻，并且在操作期间提供有源存储器单元的局部加热以便于单元状态切换。

公开(公告)号：US20070190413A1

公开(公告)日：2007-08-16

申请号：US10566344

申请日：2004-07-29

申请人： Sung-Man Lee ,  Heon Lee ,  Moon Hong

发明人： Sung-Man Lee ,  Heon Lee ,  Moon Hong

IPC分类号： H01M4/58 ,  B05D5/12

CPC分类号： H01M4/1395 ,  H01M4/02 ,  H01M4/0471 ,  H01M4/049 ,  H01M4/13 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/139 ,  H01M4/366 ,  H01M4/386 ,  H01M4/48 ,  H01M4/485 ,  H01M4/625 ,  H01M10/0525 ,  Y02E60/122

摘要： Provided are an anode active material for a lithium secondary battery having high reversible capacity and excellent charge/discharge efficiency, comprising a complex composed of ultra-fine Si phase particles and an oxide surrounding the ultra-fine Si phase particles, and a carbon material; and a method for preparing the same. The present invention also provides a method for preparing an anode active material for a lithium secondary battery comprising producing a complex composed of ultra-fine Si particles and an oxide surrounding the ultra-fine Si particles by mixing a silicon oxide and a material having an absolute value of oxide formation enthalpy (ΔHfor) greater than that of the silicon oxide and negative oxide formation enthalpy by a mechanochemical process or subjecting them to a thermochemical reaction to reduce the silicon oxide; and mixing the Si phase-containing oxide complex and carbon material.

摘要翻译： 本发明提供一种锂二次电池的负极活性物质，其具有高的可逆容量和优异的充放电效率，包括由超细Si相颗粒和围绕超细Si相颗粒的氧化物组成的复合体和碳材料; 及其制备方法。 本发明还提供一种锂二次电池用负极活性物质的制造方法，其特征在于，通过混合氧化硅和绝缘材料，制造由超细Si粒子和超细Si粒子构成的氧化物构成的络合物 通过机械化学方法的氧化物形成焓值（ΔH）大于氧化硅的值和负氧化物形成焓值，或使其进行热化学反应以还原氧化硅; 并混合含Si相的氧化物络合物和碳材料。