公开(公告)号：US09608004B2

公开(公告)日：2017-03-28

申请号：US14953077

申请日：2015-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Mayumi Mizukami ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L27/12 ,  H01L21/20 ,  H01L21/762 ,  H01L33/44 ,  G02F1/1362 ,  H01L29/24 ,  H01L29/786 ,  G02F1/136

CPC classification number: H01L27/1266 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1362 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/44 ,  H01L2227/326 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

公开(公告)号：US09508620B2

公开(公告)日：2016-11-29

申请号：US14704303

申请日：2015-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L21/00 ,  H01L23/29 ,  H01L27/12 ,  H01L29/786 ,  H01L51/00 ,  H01L27/32 ,  H01L29/66

CPC classification number: H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

公开(公告)号：US20150255325A1

公开(公告)日：2015-09-10

申请号：US14644375

申请日：2015-03-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

IPC: H01L21/762 ,  H01L21/308

CPC classification number: H01L21/76275 ,  H01L21/308 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/32 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/56

Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

Abstract translation: 具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是 以及制造半导体器件的方法。 在本发明中，元件不形成在塑料膜上。 相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂 用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层） （第二接合部件（16））。 以这种方式，本发明实现了薄膜的薄化和重量的减轻。

公开(公告)号：US09093324B2

公开(公告)日：2015-07-28

申请号：US14010735

申请日：2013-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L29/04 ,  H01L31/20 ,  H01L29/22 ,  H01L33/00 ,  H01L23/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12

CPC classification number: H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

公开(公告)号：US08937020B2

公开(公告)日：2015-01-20

申请号：US13922323

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC: H01L21/302 ,  H01L21/461 ,  C04B41/00 ,  H01L29/786 ,  C04B35/453 ,  C23C14/34 ,  H01L21/02 ,  H01L29/423 ,  C04B35/01 ,  C23C14/56 ,  C04B35/645 ,  C23C14/10 ,  B29C31/00 ,  H01L29/417 ,  H01L29/66 ,  C04B41/80 ,  H01L29/45 ,  C04B111/00

CPC classification number: H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Abstract translation: 一个目的是提供一种用于形成氧化物半导体膜的沉积技术。 通过使用包含含氢浓度低的金属氧化物的烧结体（例如低于1×1016原子/ cm3）的溅射靶形成氧化物半导体膜，氧化物半导体膜含有少量的杂质如 含有以H 2 O或氢原子为代表的氢的化合物。 此外，该氧化物半导体膜用作晶体管的有源层。

公开(公告)号：US08679875B2

公开(公告)日：2014-03-25

申请号：US13922795

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hirokazu Yamagata ,  Shunpei Yamazaki ,  Toru Takayama

IPC: H01L33/44

CPC classification number: H01L51/524 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/0003 ,  H01L51/5056 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5253 ,  H01L51/56 ,  Y10S438/976

Abstract: A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

Abstract translation: 提供了一种高品质的发光装置，其具有不含常规问题的持久发光元件，因为能够降低劣化的结构，并且提供了制造发光器件的方法。 在形成堤之后，使用基于PVA（聚乙烯醇）的多孔物质等将暴露的阳极表面擦拭以使表面平整并从表面除去灰尘。 在TFT的层间绝缘膜和阳极之间形成绝缘膜。 或者，在表面改性用TFT上的层间绝缘膜的表面进行等离子体处理。

公开(公告)号：US20130126883A1

公开(公告)日：2013-05-23

申请号：US13743914

申请日：2013-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC: H01L33/62

CPC classification number: H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

Abstract translation: 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa时，膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并且具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US10693097B2

公开(公告)日：2020-06-23

申请号：US15646146

申请日：2017-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Hiroki Adachi ,  Toru Takayama ,  Natsuko Takase

IPC: H01L51/50 ,  G09G5/02 ,  H01L51/52 ,  G09G3/20 ,  G02F1/1362 ,  G09G3/3233 ,  G09G3/36 ,  G02F1/1335

Abstract: A first display element includes a first pixel electrode that reflects visible light, a liquid crystal layer, and a first common electrode that transmits visible light. A second display element includes a second pixel electrode that transmits visible light, a light-emitting layer, and a second common electrode that reflects visible light. A separation layer that reflects visible light is formed over a formation substrate, an insulating layer is formed over the separation layer, and the second display element is formed over the insulating layer. The formation substrate and a second substrate are bonded to each other. Then, the formation substrate and the separation layer are separated from each other. The exposed separation layer is processed into the first pixel electrode. The liquid crystal layer is positioned between the first common electrode and the first pixel electrode and a first substrate and the second substrate are bonded to each other.

公开(公告)号：US10325940B2

公开(公告)日：2019-06-18

申请号：US15347967

申请日：2016-11-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L27/12 ,  H01L21/762 ,  H01L27/32 ,  B60R1/00 ,  B60R11/02 ,  B60R11/04 ,  H01L21/683 ,  B60R11/00

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

公开(公告)号：US10186682B2

公开(公告)日：2019-01-22

申请号：US15582851

申请日：2017-05-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L51/00

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.