公开(公告)号：US20140131731A1

公开(公告)日：2014-05-15

申请号：US14076626

申请日：2013-11-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul KIM ,  Shin Hyoung Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Jun Woong Lee ,  Tae Gyun Kim

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L2933/0016

Abstract: A light-emitting device according to an exemplary embodiment of the present invention includes a first conductivity-type semiconductor layer disposed on a substrate; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; and an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer. The irregular convex-concave pattern includes convex portions and concave portions, and the convex portions have irregular heights and the concave portions have irregular depths. The first conductivity-type semiconductor layer including the irregular convex-concave pattern is exposed from the active layer and the second conductivity-type semiconductor layer.

Abstract translation: 根据本发明的示例性实施例的发光器件包括设置在基板上的第一导电型半导体层; 设置在所述第一导电型半导体层上的有源层; 设置在有源层上的第二导电型半导体层; 以及设置在第一导电型半导体层的表面上的不规则的凸凹图案。 不规则的凸凹图案包括凸部和凹部，凸部具有不规则的高度，凹部具有不规则的深度。 包含不规则凸凹图案的第一导电型半导体层从有源层和第二导电型半导体层露出。

公开(公告)号：US20140110666A1

公开(公告)日：2014-04-24

申请号：US14126638

申请日：2012-06-15

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duck II Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/06

CPC classification number: H01L33/24 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L2933/0091

Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.

Abstract translation: 本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。 半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面 形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。 在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

公开(公告)号：US12071357B2

公开(公告)日：2024-08-27

申请号：US18373283

申请日：2023-09-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Young Choi ,  Woong Ki Jeong ,  Kyu Won Han ,  Yeo Jin Yoon

IPC: C02F1/32

CPC classification number: C02F1/325 ,  C02F2201/322 ,  C02F2303/04

Abstract: A light emitting module including a light source configured to irradiate ultraviolet light, a board on which the light source is disposed, a tube accommodating the board and including a transparent region to transmit the ultraviolet light emitted from the light source, a first base coupled to one side of the tube, a second base coupled to the other side of the tube, a fixation groove disposed in the tube and connected to at least one of the first and second bases, in which the board is coupled to be inserted into the fixation groove, and the fixation groove is spaced apart from a center of the first base when viewed in a cross-section perpendicular to a length direction of the tube.

公开(公告)号：US10069038B2

公开(公告)日：2018-09-04

申请号：US14732455

申请日：2015-06-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Kwon Kim ,  Sum Geun Lee ,  Kyung Wan Kim ,  Yeo Jin Yoon ,  Duk Il Suh ,  Ji Hye Kim

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/14 ,  H01L33/16 ,  H01L33/22 ,  H01L33/20 ,  H01L33/32 ,  H01L33/00 ,  H01L33/10

Abstract: Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconduct or layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.

公开(公告)号：US20180240793A1

公开(公告)日：2018-08-23

申请号：US15894810

申请日：2018-02-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  So Ra Lee ,  Myoung Hak Yang

IPC: H01L27/02 ,  H01L25/16

CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

公开(公告)号：US20180175105A1

公开(公告)日：2018-06-21

申请号：US15898644

申请日：2018-02-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam LEE ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/62 ,  H01L33/08 ,  H01L27/32

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

公开(公告)号：US09978910B2

公开(公告)日：2018-05-22

申请号：US15219086

申请日：2016-07-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

公开(公告)号：US09929315B2

公开(公告)日：2018-03-27

申请号：US14724436

申请日：2015-05-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duk Il Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Won Woo ,  Shin Hyoung Kim

IPC: H01L29/15 ,  H01L33/38 ,  H01L27/15 ,  H01L33/32 ,  H01L33/42 ,  H01L33/14 ,  H01L29/861 ,  H01L33/20

CPC classification number: H01L33/387 ,  H01L27/15 ,  H01L29/861 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A light emitting diode chip and a light emitting diode package including the same. The light emitting diode chip includes a substrate, a light emitting diode section disposed on the substrate, an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section. In the light emitting diode chip, the light emitting diode section is disposed together with the inverse parallel diode section.

公开(公告)号：US09847458B2

公开(公告)日：2017-12-19

申请号：US15056702

申请日：2016-02-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： So Ra Lee ,  Yeo Jin Yoon

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

Abstract: A light emitting diode includes an n-type semiconductor layer disposed on a substrate; a p-type semiconductor layer disposed on a portion of the n-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer and generating light through recombination of electrons and holes; an ohmic contact layer disposed on the p-type semiconductor layer and including an indium tin oxide (ITO) layer doped with a metal, a transparent conductive layer disposed on the ohmic contact layer to a different thickness than the ohmic contact layer and including an undoped ITO layer, and a reflective layer disposed on the transparent conductive layer and including an oxide layer. Accordingly, the light emitting diode exhibits excellent current-voltage characteristics through improvement in reliability and electrical conductivity of the ohmic contact layer while improving luminous efficacy through the reflective layer formed of an oxide.

公开(公告)号：US09793440B2

公开(公告)日：2017-10-17

申请号：US15200633

申请日：2016-07-01

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.