公开(公告)号：US20110118500A1

公开(公告)日：2011-05-19

申请号：US13012199

申请日：2011-01-24

申请人： Tetsuya Yamamoto ,  Kenji Yagi ,  Kenya Ishida

发明人： Tetsuya Yamamoto ,  Kenji Yagi ,  Kenya Ishida

IPC分类号： C07C69/78 ,  C07C69/533 ,  C07C69/63 ,  C07C69/24 ,  C07C69/708

CPC分类号： C12P7/26 ,  A23L2/56 ,  A23L27/204 ,  A61K8/37 ,  A61Q11/00 ,  A61Q13/00 ,  C07B53/00 ,  C07B2200/07 ,  C07C403/08 ,  C07C403/12 ,  C07C403/14 ,  C07C2601/16 ,  C12G3/06 ,  C12P41/004

摘要： Provided that a method for inexpensively producing optically active α-ionone with a high yield and a high asymmetric yield and with good workability in a short process, and a perfume composition comprising the optically active α-ionone obtained by the aforementioned method. A method for producing optically active α-ionone, comprising allowing α-ionone as a mixture of optical isomers to react with an esterification agent, and hydrolyzing the obtained α-ionone enol ester; a method for producing optically active α-ionone comprising subjecting α-ionone as a mixture of optical isomers to an asymmetric reduction, allowing the obtained optically active α-ionol to react with an esterification agent to give an optically active α-ionol ester, hydrolyzing the obtained optically active α-ionol ester after purification as necessary, and then oxidizing the obtained optically active α-ionol; and a perfume composition comprising thus obtained optically active α-ionone.

摘要翻译： 本发明提供了一种低成本地生产光学活性α-紫罗兰酮的方法，其具有高产率和高不对称产率，并且在短时间内具有良好的可加工性，以及包含通过上述方法获得的光学活性α-紫罗兰酮的香料组合物。 一种光学活性α-紫罗兰酮的制造方法，其特征在于，使作为旋光异构体的混合物的α-紫罗烯酮与酯化反应，水解得到的α-紫罗烯酮烯醇酯; 一种光学活性α-紫罗兰酮的制造方法，其特征在于，将α-紫罗烯酮作为光学异构体的混合物进行不对称还原，使得所得光学活性α-离子酚与酯化反应，得到光学活性α-离子醇酯，水解 根据需要纯化后得到的光学活性α-离子醇酯，然后氧化所得光学活性α-离子醇; 和包含这样得到的光学活性α-紫罗兰酮的香料组合物。

公开(公告)号：US07902404B2

公开(公告)日：2011-03-08

申请号：US11991966

申请日：2006-09-13

申请人： Tetsuya Yamamoto ,  Kenji Yagi ,  Kenya Ishida

发明人： Tetsuya Yamamoto ,  Kenji Yagi ,  Kenya Ishida

IPC分类号： C07C45/42

CPC分类号： C12P7/26 ,  A23L2/56 ,  A23L27/204 ,  A61K8/37 ,  A61Q11/00 ,  A61Q13/00 ,  C07B53/00 ,  C07B2200/07 ,  C07C403/08 ,  C07C403/12 ,  C07C403/14 ,  C07C2601/16 ,  C12G3/06 ,  C12P41/004

摘要： Provided that a method for inexpensively producing optically active α-ionone with a high yield and a high asymmetric yield and with good workability in a short process, and a perfume composition comprising the optically active α-ionone obtained by the aforementioned method. A method for producing optically active α-ionone, comprising allowing α-ionone as a mixture of optical isomers to react with an esterification agent, and hydrolyzing the obtained α-ionone enol ester; a method for producing optically active α-ionone comprising subjecting α-ionone as a mixture of optical isomers to an asymmetric reduction, allowing the obtained optically active α-ionol to react with an esterification agent to give an optically active α-ionol ester, hydrolyzing the obtained optically active α-ionol ester after purification as necessary, and then oxidizing the obtained optically active α-ionol; and a perfume composition comprising thus obtained optically active α-ionone.

公开(公告)号：US20100328992A1

公开(公告)日：2010-12-30

申请号：US12817327

申请日：2010-06-17

申请人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

发明人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/005 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C17/16 ,  G11C29/50 ,  G11C2029/4402 ,  Y10S977/935

摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

摘要翻译： 存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层 经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。

公开(公告)号：US20100314673A1

公开(公告)日：2010-12-16

申请号：US12796802

申请日：2010-06-09

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： H01L27/115

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3277 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.

摘要翻译： 存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体 层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间 第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

公开(公告)号：US20100181654A1

公开(公告)日：2010-07-22

申请号：US12664605

申请日：2009-06-13

申请人： Toshihito Fujiwara ,  Toshihiko Nishimori ,  Toshiya Watanabe ,  Naoki Yasuda ,  Hideharu Nobutoki ,  Teruhiko Kumada ,  Chiho Mizushima ,  Takuya Kamiyama ,  Tetsuya Yamamoto

发明人： Toshihito Fujiwara ,  Toshihiko Nishimori ,  Toshiya Watanabe ,  Naoki Yasuda ,  Hideharu Nobutoki ,  Teruhiko Kumada ,  Chiho Mizushima ,  Takuya Kamiyama ,  Tetsuya Yamamoto

IPC分类号： H01L23/58 ,  H01L21/471

CPC分类号： H01L21/02118 ,  C23C16/342 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/76801

摘要： An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film. The production process comprises a film forming step of supplying a mixed gas containing a carrier gas and a raw material gas, which is a gasified material having borazine skeletal molecules, into a chamber, causing the mixed gas to be in a plasma state, applying a bias to the substrate placed in the chamber, and carrying out gas-phase polymerization by using the borazine skeletal molecule as a fundamental unit so as to form the insulating film on the substrate; and a reaction promoting step of, after the film forming step, bringing the bias applied to the substrate to a different magnitude from the bias in the film forming step, supplying the mixed gas while gradually reducing only the raw material gas, which is the gasified material having the borazine skeletal molecules, treating the insulating film with a plasma mainly comprising the carrier gas.

摘要翻译： 提供具有低介电常数，低泄漏电流和高机械强度特性的半导体器件绝缘膜的目的是经历这些特性的小的时间依赖性变化，并且具有优异的耐水性，并且提供制造 以及使用该绝缘膜的半导体器件的制造方法。 制造方法包括：将含有载气的混合气体和作为具有环硼氮烷骨架分子的气化材料的原料气体供给到室中的成膜工序，使混合气体处于等离子体状态， 偏置于放置在室内的基板上，通过使用环硼氮烷骨架分子作为基本单元进行气相聚合，以在基板上形成绝缘膜; 以及反应促进步骤，在成膜步骤之后，使得施加到基板上的偏压与成膜步骤中的偏压大小不同，供给混合气体，同时逐渐减少气化的原料气体 具有环硼烷骨架分子的材料，以主要包含载气的等离子体处理绝缘膜。

公开(公告)号：US20100135068A1

公开(公告)日：2010-06-03

申请号：US12629660

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/02 ,  H01L43/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.

摘要翻译： 提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化 使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。 堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。

公开(公告)号：US20100132197A1

公开(公告)日：2010-06-03

申请号：US12595198

申请日：2008-03-24

申请人： Masaharu Hori ,  Tetsuya Yamamoto

发明人： Masaharu Hori ,  Tetsuya Yamamoto

IPC分类号： F16C43/02 ,  F16C17/10 ,  B21D53/10

CPC分类号： F16C43/02 ,  F16C17/026 ,  F16C17/10 ,  F16C17/107 ,  F16C33/107 ,  Y10T29/49639 ,  Y10T29/49696

摘要： Easy and precise setting of a predetermined thrust bearing gap is made possible.An axial gap 13 having a dimension that is equal to the sum of two thrust bearing gaps is first provided between the flange part 2b of the shaft member 2 and the bearing member or bearing sleeve 8. The shaft member 2 and the bearing sleeve 8 are accommodated inside the housing 7 with this gap dimension 8 being kept, and the bearing sleeve 8 is secured to the housing 7.

摘要翻译： 可以容易且精确地设定预定的推力轴承间隙。 首先，在轴构件2的凸缘部2b与轴承构件或轴承套筒8之间设置尺寸等于两个推力轴承间隙的总和的轴向间隙13.轴构件2和轴承套筒8是 容纳在壳体7内，保持该间隙尺寸8，并且轴承套筒8固定到壳体7。

公开(公告)号：US07654375B2

公开(公告)日：2010-02-02

申请号：US10591160

申请日：2005-03-02

申请人： Koichi Okada ,  Takahide Saito ,  Hiroshi Bunko ,  Tetsuya Yamamoto

发明人： Koichi Okada ,  Takahide Saito ,  Hiroshi Bunko ,  Tetsuya Yamamoto

IPC分类号： F16D27/102 ,  F16D27/14

CPC分类号： F16D41/088 ,  F16D27/112 ,  F16D48/064 ,  F16D2027/002 ,  F16D2027/005 ,  F16D2027/008 ,  F16D2500/1022 ,  F16D2500/1045 ,  F16D2500/30415 ,  F16D2500/501 ,  F16D2500/70418

摘要： A rotation transmission device includes a roller clutch unit for selectively engaging an inner member mounted on a rotary shaft with an outer ring through rollers, and an electromagnetic clutch unit for electromagnetically controlling the selective engagement by the rollers. The current until the clutch engages is set so as to correspond to a state in which a maximum current according to the revolving speed is required and is varied according to the revolving speed of the rotary shaft to reduce power consumption and the size of the electromagnetic coil.

摘要翻译： 一种旋转传递装置，包括：滚子离合器单元，用于通过滚子选择性地将安装在旋转轴上的内部构件与外圈接合;以及电磁离合器单元，用于电磁控制由辊选择性地接合。 直到离合器接合的电流被设定为对应于需要根据转速的最大电流并根据旋转轴的转速而变化的状态，以降低功率消耗和电磁线圈的尺寸 。

公开(公告)号：US20090236722A1

公开(公告)日：2009-09-24

申请号：US12400390

申请日：2009-03-09

申请人： Taku Nishiyama ,  Tetsuya Yamamoto ,  Naohisa Okumura ,  Takuya Futatsuyama

发明人： Taku Nishiyama ,  Tetsuya Yamamoto ,  Naohisa Okumura ,  Takuya Futatsuyama

IPC分类号： H01L23/48 ,  H01L23/12

CPC分类号： H01L23/5388 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor memory card includes a wiring board having an outer shape where a cut-out portion is provided at a first long-edge. A second surface of the wiring board includes connection pads disposed along a portion except the cut-out portion of the first long-edge. A memory device is mounted on the second surface of the wiring board. The memory device includes electrode pads arranged along a long-edge positioning in a vicinity of the first long-edge of the wiring board, and one-sidedly disposed so as to correspond to disposed positions of the connection pads. A controller device is stacked on the memory device.

摘要翻译： 半导体存储卡包括具有外部形状的布线板，其中切口部分设置在第一长边缘处。 布线板的第二表面包括沿着除了第一长边缘的切口部分之外的部分设置的连接焊盘。 存储器件安装在布线板的第二表面上。 存储装置包括沿着布线板的第一长边缘附近的长边定位布置的电极焊盘，并且一边设置成与连接焊盘的布置位置相对应。 控制器装置堆叠在存储器件上。

公开(公告)号：US07517720B2

公开(公告)日：2009-04-14

申请号：US11984941

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/00

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.