公开(公告)号：US08038834B2

公开(公告)日：2011-10-18

申请号：US12754662

申请日：2010-04-06

Applicant: Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

Inventor： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的基板的基板保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US08032348B2

公开(公告)日：2011-10-04

申请号：US10673138

申请日：2003-09-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G06F17/50 ,  G06G7/48 ,  G06F19/00 ,  H01L21/00

CPC classification number: G06F17/5009 ,  G06F2217/16

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to facilitate the process performed by the semiconductor processing tool.

Abstract translation: 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理有关的数据，并输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果，并且第一原理模拟结果用于促进由半导体处理工具执行的处理。

公开(公告)号：US07723648B2

公开(公告)日：2010-05-25

申请号：US11525815

申请日：2006-09-25

Applicant: Yuji Tsukamoto ,  Eric J. Strang

Inventor： Yuji Tsukamoto ,  Eric J. Strang

IPC: H05B3/68 ,  F27B5/14

CPC classification number: F27D5/0037 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67103

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Abstract translation: 用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。

公开(公告)号：US07666479B2

公开(公告)日：2010-02-23

申请号：US11746779

申请日：2007-05-10

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/455 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  H05H1/24 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/45523 ,  C23C16/45574 ,  H01J37/3244 ,  Y10T137/0318 ,  Y10T137/0324

Abstract: An apparatus and method for gas injection sequencing in order to increase the gas injection total pressure while satisfying an upper limit to the process gas flow rate, thereby achieving gas flow uniformity during a sequence cycle and employing practical orifice configurations. The gas injection system includes a gas injection electrode having a plurality of regions, through which process gas flows into the process chamber. The gas injection system further includes a plurality of gas injection plenums, each independently coupled to one of the aforesaid regions and a plurality of gas valves having an inlet end and an outlet end, where the outlet end is independently coupled to one of the aforesaid plurality of gas injection plenums. The gas injection system includes a controller coupled to the plurality of gas valves for sequencing the flow of process gas through the aforesaid plurality of regions.

Abstract translation: 一种用于气体喷射排序的装置和方法，以便在满足工艺气体流量的上限的同时增加气体注入总压力，从而在顺序循环期间实现气流均匀性并采用实用的孔结构。 气体注入系统包括具有多个区域的气体注入电极，工艺气体通过该多个区域流入处理室。 气体注入系统还包括多个气体注入气室，每个气体注入气室各自独立地连接到前述区域中的一个区域，以及具有入口端和出口端的多个气体阀，其中出口端独立地与上述多个 的气体注入气室。 气体注入系统包括耦合到多个气体阀的控制器，用于对通过前述多个区域的处理气体的流动进行排序。

公开(公告)号：US07482757B2

公开(公告)日：2009-01-27

申请号：US10472553

申请日：2002-03-25

Applicant: Bill H. Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric J. Strang

Inventor： Bill H. Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric J. Strang

IPC: H01J7/24

CPC classification number: H01J37/321 ,  H01J37/32357 ,  H01J37/3266

Abstract: A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.

Abstract translation: 公开了一种高密度等离子体源（100）。 源包括环形绝缘体（300），其内部形成有环形空腔（316）。 用作天线的电感线圈（340）布置在环形空腔内，并且可操作以在等离子体管道（60）内部区域（72）内产生第一磁场，并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体（400）围绕环形绝缘体。 静电屏蔽（360）被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上，下磁环（422和424）优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通，并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件，该工件位于与至少一个源连通的等离子体室中。

公开(公告)号：US07384876B2

公开(公告)日：2008-06-10

申请号：US10539705

申请日：2003-12-19

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: H01L21/302

CPC classification number: H01J37/3244 ,  H01J37/32935

Abstract: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal. A method of determining the state of the consumable gas inject plate comprises: measuring a change in the gas injection pressure associated with either a change in the process gas mass flow rate or the processing pressure; determining a response time for the change in pressure; and comparing the response time during erosion to a response time during no erosion.

Abstract translation: 描述了包括气体注入系统的等离子体处理装置，其中气体注入系统包括气体注入组件主体，联接到气体注入组件主体的可消耗气体注入板，以及耦合到气体注入系统 气体注入系统体和消耗气体注入板。 气体注入系统被配置为从至少一个质量流量控制器接收处理气体并将处理气体分配到等离子体处理装置内的处理区域，并且压力传感器被配置成测量气体注入气室内的气体注入压力 。 耦合到压力传感器的控制器被配置为从压力传感器接收信号并且基于该信号来确定可消耗气体注入板的状态。 确定可消耗气体注入板的状态的方法包括：测量与处理气体质量流量或处理压力的变化相关联的气体注入压力的变化; 确定压力变化的响应时间; 并将侵蚀期间的响应时间与不侵蚀期间的响应时间进行比较。

公开(公告)号：US07353141B2

公开(公告)日：2008-04-01

申请号：US11736789

申请日：2007-04-18

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G01N21/88

CPC classification number: G01B11/0683 ,  H01J37/32935 ,  H01J37/32963

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract translation: 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

公开(公告)号：US07311782B2

公开(公告)日：2007-12-25

申请号：US11103542

申请日：2005-04-12

Applicant: Eric J. Strang ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Wayne L. Johnson

IPC: C23C16/00 ,  H01L21/00

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

Abstract translation: 一种用于在半导体制造期间对衬底进行热处理的方法和装置。 该方法包括使用加热组件将衬底加热至预定温度，使用冷却组件将衬底冷却至预定温度，该冷却组件位于加热组件和冷却组件之间提供导热区域，并调节热电导率 导电区域以帮助加热和冷却基板。 该装置包括加热组件，冷却组件，其定位成使得在加热和冷却组件之间设置热传导区域，以及用于调节导热区域的热导率的结构或构造。

公开(公告)号：US06913703B2

公开(公告)日：2005-07-05

申请号：US10291763

申请日：2002-11-12

Applicant: Eric J. Strang ,  Thomas F. A. Bibby, Jr. ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Thomas F. A. Bibby, Jr. ,  Wayne L. Johnson

IPC: H01L21/3065 ,  H01J37/32 ,  H01B13/00

CPC classification number: H01J37/32009 ,  H01J37/32532 ,  H01J37/32559 ,  H01J37/32862

Abstract: A method of adjusting the relative thickness of an electrode assembly (10) in a plasma processing system (6) capable of supporting a plasma (20, 120) in a reactor chamber (16). The electrode assembly is arranged in the reactor chamber and includes at least one electrode having a lower surface that may have defined by at least one sacrificial protective plate (100). The electrode has a nonuniform thickness resulting from a plasma processing operation performed in the reactor chamber. The method includes a step of forming a plasma (120) designed to selectively etch the at least one electrode at the lower surface, followed by a step of etching the electrode with the aid of the plasma to reduce the nonuniformity in thickness (T(X,Z)) of the at least one electrode. The thickness of the electrode may be measured in situ using an acoustic transducer (210) during the processing of workpieces as well as during the restorative plasma etching of the electrode.

Abstract translation: 一种在能够支撑反应室（16）中的等离子体（20,120）的等离子体处理系统（6）中调节电极组件（10）的相对厚度的方法。 电极组件布置在反应器室中并且包括至少一个电极，其具有可由至少一个牺牲保护板（100）限定的下表面。 电极具有由在反应器室中执行的等离子体处理操作产生的不均匀的厚度。 该方法包括形成等离子体（120）的步骤，该等离子体（120）被设计成选择性地蚀刻下表面上的至少一个电极，随后借助等离子体蚀刻电极以减小厚度不均匀性（T（X ，Z））。 可以在加工工件期间以及在电极的修复等离子体蚀刻期间使用声换能器（210）在原位测量电极的厚度。

公开(公告)号：US06872259B2

公开(公告)日：2005-03-29

申请号：US10252209

申请日：2002-09-23

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/503 ,  C23C16/509 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C16/45565 ,  C23C16/45589 ,  C30B25/14 ,  H01J37/3244 ,  H01J37/32449

Abstract: A method of and apparatus for providing tunable gas injection in a plasma processing system (10, 10′). The apparatus includes a gas injection manifold (50) having a pressurizable plenum (150) and an array of adjustable nozzle units (250), or an array of non-adjustable nozzles (502, 602), through which gas from the plenum can flow into the interior region (40) of a plasma reactor chamber (14) capable of containing a plasma (41). The adjustable nozzle units include a nozzle plug (160) arranged within a nozzle bore (166). A variety of different nozzle units are disclosed. The nozzle plugs are axially translatable to adjust the flow of gas therethrough. In one embodiment, the nozzle plugs are attached to a plug plate (154), which is displacable relative to an injection plate (124) via displacement actuators (170) connecting the two plates. The displacement actuators are controlled by a displacement actuator control unit (180), which is in electronic communication with a plasma processing system control unit (80). The gas flow into the chamber interior region is preferably controlled by monitoring the pressure in the plenum and in the chamber and adjusting the nozzle units accordingly. Where the nozzle units are not adjustable, a portion of the nozzles are sized to a first flow condition, and another portion of the nozzles are sized to a second flow condition.

Abstract translation: 一种用于在等离子体处理系统（10,10'）中提供可调气体注入的方法和装置。 该装置包括具有可加压气室（150）和可调节喷嘴单元（250）的阵列的气体注入歧管（50）或不可调节的喷嘴阵列（502,602），来自气室的气体可以流经 进入能够容纳等离子体（41）的等离子体反应器室（14）的内部区域（40）中。 可调喷嘴单元包括布置在喷嘴孔（166）内的喷嘴塞（160）。 公开了各种不同的喷嘴单元。 喷嘴塞可轴向平移以调节气体通过其中的流动。 在一个实施例中，喷嘴塞附接到插塞板（154），其通过连接两个板的位移致动器（170）相对于注射板（124）可置换。 位移致动器由与等离子体处理系统控制单元（80）电子通信的位移致动器控制单元（180）控制。 优选地通过监测气室和室内的压力并相应地调节喷嘴单元来控制进入室内部区域的气流。 在喷嘴单元不可调节的情况下，一部分喷嘴的尺寸设定为第一流动状态，并且喷嘴的另一部分的尺寸设定为第二流动状态。