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公开(公告)号：US20150079704A1
公开(公告)日：2015-03-19
申请号：US14027368
申请日：2013-09-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Jung-Huei Peng , Yi-Shao Liu , Fei-Lung Lai , Shang-Ying Tsai
CPC classification number: B01J19/0046 , B01J2219/00286 , B01J2219/00353 , B01J2219/00387 , B01J2219/00418 , B01J2219/0043 , B01J2219/00596 , B01J2219/00605 , B01J2219/00623 , B01J2219/00659 , B01J2219/00698 , B05C11/1039 , B05D1/18 , B05D5/04 , G01N27/4145 , G01R1/06783 , G01R31/2886 , G01R31/2887 , G01R31/2889
Abstract: The present disclosure relates to a micro-fluidic probe card that deposits a fluidic chemical onto a substrate with a minimal amount of fluidic chemical waste, and an associated method of operation. In some embodiments, the micro-fluidic probe card has a probe card body with a first side and a second side. A sealant element, which contacts a substrate, is connected to the second side of the probe card body in a manner that forms a cavity within an interior of the sealant element. A fluid inlet, which provides a fluid from a processing tool to the cavity, is a first conduit extending between the first side and the second side of the probe card body. A fluid outlet, which removes the fluid from the cavity, is a second conduit extending between the first side and the second side of the probe card body.
Abstract translation: 本公开涉及一种微流体探针卡，其将流体化学品沉积在具有最少量的流体化学废物的基底上，以及相关联的操作方法。 在一些实施例中，微流体探针卡具有带有第一侧和第二侧的探针卡体。 接触基板的密封元件以在密封元件的内部形成空腔的方式连接到探针卡体的第二侧。 从处理工具向腔体提供流体的流体入口是在探针卡体的第一侧和第二侧之间延伸的第一导管。 从腔体去除流体的流体出口是在探针卡体的第一侧和第二侧之间延伸的第二导管。
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52.发明申请METHOD TO INTEGRATE DIFFERENT FUNCTION DEVICES FABRICATED BY DIFFERENT PROCESS TECHNOLOGIES 有权整合不同工艺技术制作的不同功能器件的方法公开(公告)号：US20140183611A1
公开(公告)日：2014-07-03
申请号：US13729281
申请日：2012-12-28
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Kuei-Sung Chang , Chun-Wen Cheng , Alex Kalnitsky , Chia-Hua Chu
CPC classification number: H01L27/0629 , H01L23/10 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L25/16 , H01L28/90 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/13124 , H01L2224/13144 , H01L2224/14051 , H01L2224/16268 , H01L2224/29124 , H01L2224/29144 , H01L2224/32268 , H01L2224/73103 , H01L2924/19041 , H01L2924/19104 , H01L2924/014 , H01L2924/00012
Abstract: The present disclosure is directed to an apparatus and method for manufacture thereof. The apparatus includes a first passive substrate bonded to a second active substrate by a conductive metal interface. The conductive metal interface allows for integration of different function devices at a wafer level.
Abstract translation: 本公开涉及一种用于其制造的装置和方法。 该装置包括通过导电金属界面结合到第二有源衬底的第一无源衬底。 导电金属界面允许在晶片级集成不同功能的器件。
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公开(公告)号：US12216077B2
公开(公告)日：2025-02-04
申请号：US17087112
申请日：2020-11-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Yi-Shao Liu , Fei-Lung Lai
IPC: H01L29/78 , G01N27/414 , H01L23/34 , H01L29/66 , H01L21/84
Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.
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公开(公告)号：US11486854B2
公开(公告)日：2022-11-01
申请号：US16727738
申请日：2019-12-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Alexander Kalnitsky , Yi-Shao Liu , Kai-Chih Liang , Chia-Hua Chu , Chun-Ren Cheng , Chun-Wen Cheng
Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
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公开(公告)号：US11342266B2
公开(公告)日：2022-05-24
申请号：US16934144
申请日：2020-07-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Chia-Hua Chu
IPC: H01L23/532 , B81C1/00 , H01L21/82
Abstract: An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.
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Patent Agency Ranking
公开(公告)号：US11292712B2
公开(公告)日：2022-04-05
申请号：US16731183
申请日：2019-12-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chuan Teng , Chun-Yin Tsai , Chia-Hua Chu , Chun-Wen Cheng
IPC: H01L41/113 , B81B3/00 , B81C1/00 , H04R19/00
Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.
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公开(公告)号：US11206493B2
公开(公告)日：2021-12-21
申请号：US16174159
申请日：2018-10-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chen Hsiung Yang , Chun-Wen Cheng , Chia-Hua Chu , En-Chan Chen
Abstract: A micro electro mechanical system (MEMS) microphone includes a first membrane, a second membrane, a third membrane disposed between the first membrane and the second membrane, a first cavity disposed between the first membrane and the third membrane and surrounded by a first wall, a second cavity disposed between the second membrane and the third membrane and surrounded by a second wall, and one or more first supports disposed in the first cavity and connecting the first membrane and the third membrane.
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公开(公告)号：US11184694B2
公开(公告)日：2021-11-23
申请号：US16813923
申请日：2020-03-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Chia-Hua Chu , Chun-Yin Tsai , Tzu-Heng Wu , Wen-Cheng Kuo
Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.
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公开(公告)号：US11089408B2
公开(公告)日：2021-08-10
申请号：US16907657
申请日：2020-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Chia-Hua Chu , Chun Yin Tsai
Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.
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公开(公告)号：US20210238030A1
公开(公告)日：2021-08-05
申请号：US17218358
申请日：2021-03-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Chia-Hua Chu , Wen Cheng Kuo
Abstract: Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.
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