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公开(公告)号：US20250068060A1
公开(公告)日：2025-02-27
申请号：US18946683
申请日：2024-11-13
Inventor： Chun-Fu YANG , Pei-Cheng HSU , Ta-Cheng LIEN , Hsin-Chang LEE
Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.
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公开(公告)号：US20240369918A1
公开(公告)日：2024-11-07
申请号：US18771675
申请日：2024-07-12
Inventor： Hsin-Chang LEE , Pei-Cheng HSU , Ta-Cheng LIEN , Tzu Yi WANG
Abstract: In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.
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公开(公告)号：US20240345471A1
公开(公告)日：2024-10-17
申请号：US18133937
申请日：2023-04-12
Inventor： Pei-Cheng HSU , Hsin-Chang LEE , Huan-Ling LEE , Chin-Hsiang LIN
IPC: G03F1/64
CPC classification number: G03F1/64
Abstract: A pellicle for an EUV photo mask includes a membrane attached to a frame. The membrane includes nanotubes, Ru—O—X catalyst structures partially covering a surface of each nanotube, and a protection layer to cover the Ru—O—X catalyst structures and the surface of each nanotube. X is a metal element of Mo, Ti, Zr or Nb. The Ru—O—X catalyst structures include first nano-particles of a X-containing material formed on the surface of each nanotube, and second nano-particles of a Ru-containing material formed on the first nano-particles, thereby forming catalysts or catalyst bridges. The pellicle advantageously has high EUV light transmittance and improved endurance against attacking particles (such as hydrogen particles), thereby having prolonged lifetime.
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公开(公告)号：US20240337951A1
公开(公告)日：2024-10-10
申请号：US18745211
申请日：2024-06-17
Inventor： Chien-Cheng CHEN , Chia-Jen CHEN , Hsin-Chang LEE , Shih-Ming CHANG , Tran-Hui SHEN , Yen-Cheng HO , Chen-Shao HSU
CPC classification number: G03F7/70441 , G03F1/36 , G03F1/78 , G03F1/76 , G03F7/2002 , G03F7/70358 , G03F7/70608 , G03F7/70616 , G03F7/70716 , H01J37/3174 , H01J2237/31771
Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
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公开(公告)号：US20240310744A1
公开(公告)日：2024-09-19
申请号：US18671174
申请日：2024-05-22
Inventor： Chung-Hsuan LIU , Chen-Yang LIN , Ku-Hsiang SUNG , Da-Wei YU , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
CPC classification number: G03F7/70925 , B08B7/0035 , B08B13/00 , H01L21/02057 , H01L22/12 , H05H1/01
Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.
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Patent Agency Ranking
公开(公告)号：US20240094625A1
公开(公告)日：2024-03-21
申请号：US18522942
申请日：2023-11-29
Inventor： Hsin-Chang LEE , Ping-Hsun LIN , Chih-Cheng LIN , Chia-Jen CHEN
Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.
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公开(公告)号：US20240085781A1
公开(公告)日：2024-03-14
申请号：US18517828
申请日：2023-11-22
Inventor： Hsin-Chang LEE , Pei-Cheng HSU , Hao-Ping CHENG , Ta-Cheng LIEN
Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.
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公开(公告)号：US20240045318A1
公开(公告)日：2024-02-08
申请号：US17880019
申请日：2022-08-03
Inventor： Hsin-Chang LEE , Pei-Cheng HSU , Wei-Hao LEE , Bo-Wei SHIH , Ta-Cheng LIEN
CPC classification number: G03F1/24 , G03F1/54 , G03F1/80 , C23C14/221
Abstract: An extreme ultraviolet (EUV) mask includes a substrate, a reflective multilayer stack on the substrate, a diffusion barrier layer, a capping layer and a patterned absorber layer. The reflective multilayer stack comprises alternately stacked first layers and second layers. The diffusion barrier layer is on the reflective multilayer stack. The diffusion barrier layer has a composition different from compositions of the first layers and the second layers. The capping layer is on the diffusion barrier layer. The patterned absorber layer is on the reflective multilayer stack.
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公开(公告)号：US20230251563A1
公开(公告)日：2023-08-10
申请号：US18130262
申请日：2023-04-03
Inventor： Hsin-Chang LEE , Chia-Jen CHEN , Pei-Cheng HSU , Ta-Cheng LIEN
Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.
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公开(公告)号：US20230161240A1
公开(公告)日：2023-05-25
申请号：US17736772
申请日：2022-05-04
Inventor： Wei-Che HSIEH , Chia-Ching CHU , Ya-Lun CHEN , Yu-Chung SU , Tzu-Yi WANG , Yahru CHENG , Ta-Cheng LIEN , Hsin-Chang LEE , Ching-Yu CHANG
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: In a method of manufacturing a reflective mask, an adhesion layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an absorber layer disposed over the capping layer, and a hard mask layer disposed over the absorber layer. A photoresist pattern is formed over the adhesion layer, the adhesion layer is patterned, the hard mask layer is patterned, and the absorber layer is patterned using the patterned hard mask layer as an etching mask. The photoresist layer has a higher adhesiveness to the adhesion layer than to the hard mask layer.
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