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    RESIST PROCESSING METHOD AND USE OF POSITIVE TYPE RESIST COMPOSITION
    56.
    发明申请
    RESIST PROCESSING METHOD AND USE OF POSITIVE TYPE RESIST COMPOSITION 审中-公开
    电阻加工方法和正极型电阻组合物的使用

    公开(公告)号：US20110183264A1

    公开(公告)日：2011-07-28

    申请号：US13063670

    申请日：2009-09-08

    申请人： Kazuhiko Hashimoto ,  Mitsuhiro Hata ,  Satoshi Yamamoto

    发明人： Kazuhiko Hashimoto ,  Mitsuhiro Hata ,  Satoshi Yamamoto

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/40

    摘要： A resist processing method has the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) including a structural unit represented by the formula (XX), and having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, and a photo acid generator (B) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern. wherein, Ra1 represents a hydrogen atom, a halogen atom or a C1 to C3 saturated hydrocarbon group which may be substituted with a halogen atom; Ra2 represents a single bond or a divalent organic group; Ra3 represents a hydrogen atom, a C1 to C12 saturated hydrocarbon group which may be substituted with a hydroxy group etc., and Ra4 represent a C1 to C12 saturated hydrocarbon group.

    摘要翻译： 抗蚀剂处理方法具有以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：包含由式（XX）表示的结构单元并具有酸不稳定基团的树脂（A） 在碱性水溶液中不溶或难溶，并且通过酸的作用使碱溶液和光酸产生剂（B）溶解在基材上并干燥; （2）预烘第一抗蚀膜; （3）曝光第一抗蚀膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）对第一抗蚀剂图案进行硬烘烤，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上，然后干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。 其中，Ra1表示氢原子，卤素原子或可被卤素原子取代的C1〜C3饱和烃基; Ra2表示单键或二价有机基团; Ra3表示氢原子，可被羟基取代的C1〜C12饱和烃基等，Ra4表示C1〜C12饱和烃基。

    PROCESS FOR PRODUCING PHOTORESIST PATTERN
    58.
    发明申请
    PROCESS FOR PRODUCING PHOTORESIST PATTERN 审中-公开
    生产光电子图案的工艺

    公开(公告)号：US20110091818A1

    公开(公告)日：2011-04-21

    申请号：US12906522

    申请日：2010-10-18

    申请人： Mitsuhiro HATA ,  Kazuhiko Hashimoto

    发明人： Mitsuhiro HATA ,  Kazuhiko Hashimoto

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/40

    摘要： The present invention provides a process for producing a photoresist pattern comprising the following steps (1) to (11): (1) a step of applying the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, and an acid generator, on a substrate followed by conducting drying, thereby forming the first photoresist film, (2) a step of prebaking the first photoresist film, (3) a step of exposing the prebaked first photoresist film to radiation, (4) a step of baking the exposed first photoresist film, (5) a step of developing the baked first photoresist film with the first alkaline developer, thereby forming the first photoresist pattern, (6) a step of forming a coating layer on the first photoresist pattern, (7) a step of applying the second photoresist composition on the coating layer followed by conducting drying, thereby forming the second photoresist film, (8) a step of prebaking the second photoresist film, (9) a step of exposing the prebaked second photoresist film to radiation, (10) a step of baking the exposed second photoresist film, and (11) a step of developing the baked second photoresist film with the second alkaline developer, thereby forming the second photoresist pattern.

    摘要翻译： 本发明提供了一种制备光致抗蚀剂图案的方法，包括以下步骤（1）至（11）：（1）将包含具有酸不稳定基团的结构单元的树脂在其侧面上施加的第一光致抗蚀剂组合物的步骤 并且本身不溶于或难溶于碱性水溶液，但是通过酸和酸产生剂在碱性水溶液中溶解，然后进行干燥，从而形成第一光致抗蚀剂膜（2 ）预烘烤第一光致抗蚀剂膜的步骤，（3）将预焙蚀的第一光致抗蚀剂膜暴露于辐射的步骤，（4）烘烤曝光的第一光致抗蚀剂膜的步骤，（5） 与第一碱性显影剂，由此形成第一光致抗蚀剂图案，（6）在第一光致抗蚀剂图案上形成涂层的步骤，（7）将第二光致抗蚀剂组合物涂布在涂层上 然后进行干燥，从而形成第二光致抗蚀剂膜，（8）预烘烤第二光致抗蚀剂膜的步骤，（9）将预焙烧的第二光致抗蚀剂膜暴露于辐射的步骤，（10） 第二光致抗蚀剂膜，和（11）用第二碱性显影剂显影所焙烧的第二光致抗蚀剂膜的步骤，从而形成第二光致抗蚀剂图案。