公开(公告)号：US07456109B2

公开(公告)日：2008-11-25

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US07344754B2

公开(公告)日：2008-03-18

申请号：US11155575

申请日：2005-06-20

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

IPC分类号： C23C16/00 ,  B05D3/00

CPC分类号： C23C16/455 ,  C23C16/16 ,  H01L21/28556

摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.

摘要翻译： 公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。 执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

公开(公告)号：US20070134919A1

公开(公告)日：2007-06-14

申请号：US11608504

申请日：2006-12-08

申请人： Isao Gunji ,  Yumiko Kawano

发明人： Isao Gunji ,  Yumiko Kawano

IPC分类号： H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45534 ,  C23C16/45548 ,  C23C16/45557 ,  C23C16/46

摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.

摘要翻译： 一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。 通过重复上述处理，薄膜以层叠的方式形成在基板上。

公开(公告)号：US07067422B2

公开(公告)日：2006-06-27

申请号：US10830804

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  John J. Yurkas ,  Vijay Narayanan

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  John J. Yurkas ,  Vijay Narayanan

IPC分类号： H01L21/44

CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517

摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

摘要翻译： 一种通过在处理室中提供具有高k电介质层的衬底并在热化学气相沉积工艺中在高k电介质层上形成含钽层的方法来形成含钽栅电极结构的方法， 将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体， （CH 3）2））前体气体。 在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。 在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。 还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

公开(公告)号：US20060124151A1

公开(公告)日：2006-06-15

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： B08B6/00

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US20060068588A1

公开(公告)日：2006-03-30

申请号：US10953466

申请日：2004-09-30

申请人： Hideaki Yamasaki ,  Kenji Suzuki ,  Emmanuel Guidotti ,  Enrico Mosca ,  Gert Leusink ,  Yumiko Kawano ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Kenji Suzuki ,  Emmanuel Guidotti ,  Enrico Mosca ,  Gert Leusink ,  Yumiko Kawano ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76873

摘要： A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.

摘要翻译： 提出了一种用于在具有高沉积速率，低颗粒污染和在图案化衬底上良好的阶梯覆盖的衬底上沉积Ru和Re金属层的方法。 该方法包括在处理室中提供衬底，在处理室中引入工艺气体，其中处理气体包括载气和选自羰基钌羰基前体和铼羰基前体的金属前体。 该方法还包括通过热化学气相沉积工艺在小于约20mTorr的处理室压力下在衬底上沉积Ru或Re金属层。

公开(公告)号：US20050221002A1

公开(公告)日：2005-10-06

申请号：US10814768

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Cory Wajda ,  Enrico Mosca ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Kazuhito Nakamura ,  Cory Wajda ,  Enrico Mosca ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/16

摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.

摘要翻译： 一种在处理室中的陶瓷基板加热器上处理基板的方法。 该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。 该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

公开(公告)号：US06846711B2

公开(公告)日：2005-01-25

申请号：US09794046

申请日：2001-02-28

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242

CPC分类号： H01L21/7687 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  H01L28/90

摘要： A semiconductor device includes an interlevel insulating film, a contact plug, a barrier film, a first electrode, a capacitor insulating file, and a second electrode. The interlevel insulating film is formed on a semiconductor substrate. The contact plug extends through the interlevel insulating film and is formed from a conductive material. The barrier film is formed from a tungsten-based material on the upper surface of the contact plug. The first electrode is connected to the contact plug via the barrier film and formed from a metal material on the interlevel insulating film. The capacitor insulating film is formed from an insulating metal oxide on the first electrode. The second electrode is insulated by the capacitor insulating film and formed on the surface of the first electrode.

摘要翻译： 半导体器件包括层间绝缘膜，接触插塞，阻挡膜，第一电极，电容器绝缘件和第二电极。 层间绝缘膜形成在半导体基板上。 接触插塞延伸穿过层间绝缘膜，并由导电材料形成。 阻挡膜由接触塞的上表面上的钨基材料形成。 第一电极通过阻挡膜连接到接触塞，并由层间绝缘膜上的金属材料形成。 电容绝缘膜由第一电极上的绝缘金属氧化物形成。 第二电极被电容器绝缘膜绝缘并形成在第一电极的表面上。

公开(公告)号：US06548112B1

公开(公告)日：2003-04-15

申请号：US09442930

申请日：1999-11-18

申请人： Joseph T. Hillman ,  Tugrul Yasar ,  Kenichi Kubo ,  Vincent Vezin ,  Hideaki Yamasaki ,  Yasuhiko Kojima ,  Yumiko Kawano ,  Hideki Yoshikawa

发明人： Joseph T. Hillman ,  Tugrul Yasar ,  Kenichi Kubo ,  Vincent Vezin ,  Hideaki Yamasaki ,  Yasuhiko Kojima ,  Yumiko Kawano ,  Hideki Yoshikawa

IPC分类号： C23C1618

CPC分类号： C23C16/4486

摘要： A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

摘要翻译： CVD反应器设置有与反应器室一体地连接的前体输送系统。 优选在惰性吹扫气体的帮助下，诸如铜或其它金属 - 有机前体的液体前体在高流量蒸发器的入口处被雾化。 当处于不稳定的液体状态时，液体前体保持在室温或室温以下。 在蒸发器中，引入热量以均匀加热雾化的前体。 蒸发的前体进入扩散器，其将蒸气直接或通过喷头扩散到反应室中。

公开(公告)号：US06399484B1

公开(公告)日：2002-06-04

申请号：US09425971

申请日：1999-10-25

申请人： Hideaki Yamasaki ,  Satoshi Yonezawa ,  Susumu Arima ,  Yumiko Kawano ,  Mitsuhiro Tachibana ,  Keizo Hosoda

发明人： Hideaki Yamasaki ,  Satoshi Yonezawa ,  Susumu Arima ,  Yumiko Kawano ,  Mitsuhiro Tachibana ,  Keizo Hosoda

IPC分类号： H01L214763

CPC分类号： C23C16/45565 ,  C23C16/0281 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051

摘要： A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.

摘要翻译： 一种半导体器件制造方法，包括使含有钨原子的第一源气体与工件接触并且不会使含有氮原子的第二源气体与工件接触的制备方法，以及形成钨 通过使用第一和第二源气体在工件上形成氮化物膜，以制造半导体器件。 当氮化钨膜进行热处理时，半导体器件制造方法能够防止氮化钨膜从其下面的层剥离。