公开(公告)号：US07319045B2

公开(公告)日：2008-01-15

申请号：US11428405

申请日：2006-07-03

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

摘要翻译： 提供了一种用于制造GaN基LED的方法。 该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。 该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩展金属层。 由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光 在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

公开(公告)号：US07279347B2

公开(公告)日：2007-10-09

申请号：US10720063

申请日：2003-11-25

申请人： Schang-Jing Hon ,  Jenn-Bin Huang

发明人： Schang-Jing Hon ,  Jenn-Bin Huang

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

摘要： A method for manufacturing a light-emitting structure of a light-emitting device (LED) is disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode, and a p-type metal electrode.

摘要翻译： 公开了一种用于制造发光器件（LED）的发光结构的方法。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

公开(公告)号：US07154163B2

公开(公告)日：2006-12-26

申请号：US10838186

申请日：2004-05-05

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L29/201 ,  H01L31/0304

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/2003

摘要： An epitaxial structure of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitride is formed on the first buffer layer at a second temperature. The second temperature increases up to a third temperature, during which precursors including In(CH3)3 and NH3 are used for surface treatment. A high-temperature gallium nitride is formed at the third temperature. The buffer layer and the way to form such a buffer layer allow improved crystal configuration and lowered defect density, thereby increasing the performance and service life of a semiconductor device.

摘要翻译： 描述了氮化镓系半导体器件的外延结构及其形成工艺。 在第一温度下在衬底上外延形成氮化镓的第一缓冲层。 在第二温度下，在第一缓冲层上形成氮化铟镓的第二缓冲层。 第二温度增加到第三温度，在此期间，使用包括In（CH 3 3 3）3 N 3和NH 3的前体进行表面处理。 在第三温度下形成高温氮化镓。 缓冲层和形成这种缓冲层的方式允许改善晶体结构并降低缺陷密度，从而提高半导体器件的性能和使用寿命。

公开(公告)号：US20060267027A1

公开(公告)日：2006-11-30

申请号：US11485263

申请日：2006-07-13

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Jenn-Bin Huang ,  Chi-Feng Chan ,  Hsueh-Feng Sun ,  Shi-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Jenn-Bin Huang ,  Chi-Feng Chan ,  Hsueh-Feng Sun ,  Shi-Ming Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/32

摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

摘要翻译： 一种具有高光提取效率的发光氮化镓基III-V族化合物半导体器件，其特征在于具有凹和/或凸表面的基底，纹理表面层和透明导电窗层。 因此，工作电压降低，光提取效率提高。

公开(公告)号：US07119374B2

公开(公告)日：2006-10-10

申请号：US10781766

申请日：2004-02-20

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/32

摘要： A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

公开(公告)号：US07001824B2

公开(公告)日：2006-02-21

申请号：US10781769

申请日：2004-02-20

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L33/0079

摘要： A gallium nitride (GaN) vertical light emitting diode (LED) structure and a method of separating a substrate and a thin film thereon in the GaN vertical LED are described. The structure has a metal reflective layer for reflecting light. The method provides a laser array over the substrate. A laser light emitted by the laser array is least partially be transparent to the substrate and its energy may be absorbed by the thin film. The thin film is irradiated through the substrate. The substrate is then separated from the thin film.

摘要翻译： 描述了氮化镓（GaN）垂直发光二极管（LED）结构以及在GaN垂直LED中分离衬底和薄膜的方法。 该结构具有用于反射光的金属反射层。 该方法在衬底上提供激光阵列。 由激光器阵列发射的激光对于衬底至少部分是透明的，并且其能量可被薄膜吸收。 通过基板照射薄膜。 然后将基底与薄膜分离。

公开(公告)号：US20050161689A1

公开(公告)日：2005-07-28

申请号：US11005505

申请日：2004-12-06

申请人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chen ,  Hong Choi ,  John Fan

发明人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chen ,  Hong Choi ,  John Fan

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/10 ,  H01S5/34 ,  H01S5/343 ,  H01L29/225 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/106 ,  H01S5/3425 ,  H01S5/34333

摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

摘要翻译： 一种光电器件，例如LED或激光器，其通过在由III族氮化物的量子阱层中的横向厚度变化形成的量子限制区域中的载流子（电子和空穴）的复合产生自发发射。

公开(公告)号：US06812502B1

公开(公告)日：2004-11-02

申请号：US09434318

申请日：1999-11-04

申请人： Fen-Ren Chien ,  Schang-Jing Hon

发明人： Fen-Ren Chien ,  Schang-Jing Hon

IPC分类号： H01L3300

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L2224/16245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265

摘要： The present invention discloses a flip-chip light-emitting device that has improved light-emitting efficiency. The device according to the present invention has an electrode with good reflectivity of light, such that the light directed to the base can be reflected by the electrode to the outside, and thus substantially increase the light-emitting efficiency. In addition, said electrode of the present invention also provide better current spreading effect, and thus further increase the light-emitting efficiency of the light-emitting diode.

摘要翻译： 本发明公开了一种具有提高的发光效率的倒装芯片发光器件。 根据本发明的装置具有具有良好的光反射率的电极，使得被引导到基座的光可以被电极反射到外部，从而大大提高发光效率。 此外，本发明的电极还提供更好的电流扩散效果，从而进一步提高发光二极管的发光效率。

公开(公告)号：US07675077B2

公开(公告)日：2010-03-09

申请号：US11627013

申请日：2007-01-25

申请人： Shih-Chang Shei ,  Schang-Jing Hon ,  Shih-Chen Wei ,  Juh-Yuh Su

发明人： Shih-Chang Shei ,  Schang-Jing Hon ,  Shih-Chen Wei ,  Juh-Yuh Su

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/387 ,  H01L2933/0016

摘要： A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a metal bonding layer deposed on the first surface of the conductive substrate; a reflective metal layer deposed on the metal bonding layer; an N-type semiconductor layer deposed on the reflective metal layer; an active layer deposed on the N-type semiconductor layer; a P-type semiconductor layer deposed on the active layer; a window layer deposed on the P-type semiconductor layer, wherein a thickness of the window layer is substantially at least 50 μm, and the window layer is composed of a transparent conductive material; and a P-type electrode deposed on the window layer.

摘要翻译： 对发光二极管（LED）及其制造方法进行说明。 发光二极管包括：导电基板，包括第一表面和与第一表面相对的第二表面; 金属接合层，其设置在所述导电性基板的第一面上; 反射金属层，其设置在金属接合层上; 放置在反射金属层上的N型半导体层; 位于N型半导体层上的有源层; 位于有源层上的P型半导体层; 窗口层位于P型半导体层上，其中窗口层的厚度基本上至少为50μm，窗口层由透明导电材料构成; 以及放置在窗口层上的P型电极。

公开(公告)号：US20060267038A1

公开(公告)日：2006-11-30

申请号：US11496547

申请日：2006-08-01

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A manufacturing method and device for white light emitting comprise at least two light emitting layers capable of emitting the light with the wavelengths of λ1 and λ2. Upon absorbing the light with the wavelength of one light emitting layer by at least one kind of fluorescent material, the light with the wavelength of λ3 is emitted and then mixed together with the light with the other wavelength so as to output the white light for use. Then, the fluorescent material formed on the light emitting layer of the light emitting device is packed together with said light emitting device, and then the assembly is the white light emitting device with high color rendering index of this invention.

摘要翻译： 用于白光发射的制造方法和装置包括能够发射波长为λ1和λ2的光的至少两个发光层。 在通过至少一种荧光材料吸收一个发光层的波长的光时，发射波长λ3的光，然后与另一个波长的光一起混合，以输出白光用于 。 然后，将形成在发光器件的发光层上的荧光材料与所述发光器件一起包装，然后组装为本发明的高显色指数的白色发光器件。