公开(公告)号：US5964941A

公开(公告)日：1999-10-12

申请号：US929670

申请日：1997-09-15

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/30 ,  C30B29/06

CPC分类号： C30B15/30 ,  Y10S117/911 ,  Y10T117/1032

摘要： A method and an apparatus for pulling a single crystal are disclosed. A neck portion, a corrugated portion, and a single crystal are formed below a seed crystal held by a seed chuck. When the corrugated portion is raised to a predetermined position (where lifting jig can hold the corrugated portion) by the seed chuck, the rising speed Va of the seed chuck is reduced, and a slider that supports a seed chuck lifting mechanism is raised at a speed Vb in order to maintain a constant pulling speed of the single crystal. Eventually, the pulling by the seed chuck is switched to the pulling by the slider. Subsequently, the lifting jig provided on the slider is raised slightly by a moving mechanism so that the crystal holding portions of the lifting jig are brought into contact with the corrugated portion and 1-50% of the weight of the crystal is shifted to the lifting jig. This enables safe and accurate growth of a heavy single crystal in accordance with, for example, the CZ method.

摘要翻译： 公开了一种拉制单晶的方法和装置。 在由种子卡盘保持的晶种的下方形成颈部，波纹状部分和单晶。 当波纹部分通过种子卡盘升高到预定位置（其中提升夹具可以保持波纹部分）时，种子卡盘的上升速度Va降低，并且支撑种子卡盘提升机构的滑块在 速度Vb以保持单晶的恒定牵引速度。 最终，种子卡盘的拉动被切换到由滑块拉动。 随后，设置在滑块上的提升夹具通过移动机构稍微升高，使得提升夹具的晶体保持部分与波纹部分接触，并且晶体重量的1-50％转移到提升 夹具 这使得可以根据例如CZ方法安全且准确地生长重单晶。

公开(公告)号：US5071223A

公开(公告)日：1991-12-10

申请号：US538113

申请日：1990-06-14

申请人： Masao Gotoh ,  Makoto Iida ,  Kenichi Waragai ,  Yonezo Yanokura ,  Masaki Sato

发明人： Masao Gotoh ,  Makoto Iida ,  Kenichi Waragai ,  Yonezo Yanokura ,  Masaki Sato

IPC分类号： H05K7/06 ,  B29C45/14 ,  B29L31/34 ,  H05K1/00 ,  H05K1/02 ,  H05K3/00 ,  H05K3/20 ,  H05K7/14

CPC分类号： H05K3/202 ,  H05K1/0274 ,  H05K1/0284 ,  H05K1/0263 ,  H05K2201/09118 ,  H05K2201/0999 ,  H05K2203/302 ,  H05K3/0014

摘要： A unitary circuit structure has an electric and/or optical transmission medium. The structure includes at least one of an optical signal transmission medium (22), an electric signal transmission medium (1, 8, 21, 41), and an electric power transmission medium (23) which are insert-molded in a plastic which forms a housing (7, 24) for electronic and electric devices and parts. The circuit structure serves as both conductive circuits and housing so that the electronic and electric devices and parts can be wired and mounted at high density.

公开(公告)号：US4409341A

公开(公告)日：1983-10-11

申请号：US336323

申请日：1981-12-31

申请人： Yasuo Hira ,  Susumu Tsuzuku ,  Makoto Iida ,  Masao Gotoh ,  Hitoshi Yokono ,  Yoshikazu Kimura ,  Kazumi Iijima

发明人： Yasuo Hira ,  Susumu Tsuzuku ,  Makoto Iida ,  Masao Gotoh ,  Hitoshi Yokono ,  Yoshikazu Kimura ,  Kazumi Iijima

IPC分类号： C08G18/00 ,  C08G18/50 ,  C08G18/54 ,  C08G18/76 ,  C08G18/79 ,  C08K5/521 ,  C08G18/14 ,  C08G18/32 ,  C08G18/77

CPC分类号： C08G18/797 ,  C08G18/5033 ,  C08G18/546 ,  C08G18/7664 ,  C08K5/521 ,  C08G2101/0025 ,  C08G2101/0033 ,  C08G2101/0083 ,  C08G2120/00 ,  Y10S521/901 ,  Y10S521/906

摘要： A composition for polyurethane foam comprising (a) polyols containing at least one of alkylene oxide adducts of aniline-formaldehyde condensates and alkylene oxide adducts of reduced compounds of nitrated toluenes in an amount of 30 to 70% by weight of the polyols, (b) at least one isocyanate of the formula: ##STR1## a fire retardant, together with one or more conventional catalysts, foam stabilizers, blowing agents and the like additives, can give fire retardant, high impact and heat resistant urethane foams.

摘要翻译： 一种聚氨酯泡沫的组合物，其包含（a）多元醇，其含有苯胺 - 甲醛缩合物的烯化氧加合物和硝化甲苯的还原化合物的烯化氧加合物中的至少一种，其含量为多元醇的30至70重量％，（b） 至少一种下式的异氰酸酯：阻燃剂与一种或多种常规催化剂，泡沫稳定剂，发泡剂等添加剂一起可以提供阻燃，高冲击和耐热的聚氨酯泡沫塑料 。

公开(公告)号：US07582159B2

公开(公告)日：2009-09-01

申请号：US10553754

申请日：2004-04-26

申请人： Makoto Iida

发明人： Makoto Iida

IPC分类号： C30B15/10 ,  C30B15/20

CPC分类号： C30B15/203 ,  C30B29/06 ,  Y10S117/911

摘要： A method for producing a single crystal by Czochralski method with pulling a seed crystal from a raw material melt, wherein in which a range of a pulling rate of pulling a single crystal, a temperature gradient at a solid-liquid interface and a highest temperature at an interface between a crucible and a raw material melt are defined. The single crystal is pulled with controlling the pulling rate and/or the temperature gradient at a solid-liquid interface within the determined range. The method produces a single crystal in which a desired defect region and/or a desired defect-free region can be determined more precisely and a single crystal with desired quality can be more surely pulled.

摘要翻译： 一种通过Czochralski法从原料熔体中拉籽晶来制造单晶的方法，其中拉伸单晶的拉伸速度的范围，固液界面处的温度梯度和最高温度 定义坩埚和原料熔体之间的界面。 通过控制在所确定的范围内的固 - 液界面处的拉伸速率和/或温度梯度来拉伸单晶。 该方法产生可以更准确地确定期望的缺陷区域和/或期望的无缺陷区域的单晶体，并且可以更可靠地拉伸具有期望质量的单晶体。

公开(公告)号：US07571641B2

公开(公告)日：2009-08-11

申请号：US11760867

申请日：2007-06-11

申请人： Masayuki Kozawa ,  Makoto Iida

发明人： Masayuki Kozawa ,  Makoto Iida

IPC分类号： G01M15/00

CPC分类号： G01F1/684 ,  B29C45/0025 ,  B29C45/0046 ,  B29C2045/0027 ,  B29L2031/737 ,  G01F1/6842 ,  G01F15/00 ,  G01F15/14 ,  G01F15/18 ,  G01F15/185

摘要： A laminarization lattice of thin plastic and a gate are provided in a body at respective positions so that a distance between the laminarization lattice and the gate is not less than a half of an entire length of the body, and the laminarization lattice and the body are integrally molded. That is, a configuration of the invention enables a hesitation occurring in the lattice of thin plastic to be suppressed, and a resin to be injected at single stroke of a short time to form the lattice of thin plastic.

摘要翻译： 薄片和栅极的层状晶格在各自的位置处设置在体内，使得层状晶格和栅极之间的距离不小于身体整体长度的一半，层状晶格和体是 整体模制 也就是说，本发明的结构能够抑制在薄塑料的格子中产生的犹豫，并且在短时间内单次注入的树脂形成薄塑料的格子。

公开(公告)号：US07384477B2

公开(公告)日：2008-06-10

申请号：US10560581

申请日：2004-05-28

申请人： Masahiro Sakurada ,  Makoto Iida ,  Nobuaki Mitamura ,  Atsushi Ozaki

发明人： Masahiro Sakurada ,  Makoto Iida ,  Nobuaki Mitamura ,  Atsushi Ozaki

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/203

摘要： The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.

摘要翻译： 本发明是一种通过CZ法从室内的原料熔融物中拉出单晶的单晶的制造方法，其中，当生长单晶时，拉伸速度定义为V，晶体的温度梯度 在生长单晶时被定义为G，晶体的温度梯度G通过改变至少两个或更多个拉伸条件来控制。 因此，提供了一种单晶的制造方法，其中当通过CZ法生长单晶时，可以在不降低拉伸速度V的情况下控制V / G，从而可以产生包括所需缺陷区的单晶 有效地在短时间内。

公开(公告)号：US20080124564A1

公开(公告)日：2008-05-29

申请号：US11795388

申请日：2006-01-30

申请人： Yasuhito Kinpara ,  Makoto Iida

发明人： Yasuhito Kinpara ,  Makoto Iida

IPC分类号： B32B27/28

CPC分类号： H05K3/0047 ,  H05K2201/0133 ,  H05K2201/0209 ,  H05K2203/0214 ,  Y10T428/24917 ,  Y10T428/249951 ,  Y10T428/249953 ,  Y10T428/31938

摘要： A workpiece boring/cutting operation aiding plate material comprising a rubber-containing styrene resin composition and an inorganic filler, wherein these are compounded in a weight ratio of 80:20 to 40:60; and a molding making use of the same.

摘要翻译： 一种包含含橡胶的苯乙烯树脂组合物和无机填料的工件镗/切割操作辅助板材料，其中以80:20至40:60的重量比混合; 和使用其的模制品。

公开(公告)号：US20070295068A1

公开(公告)日：2007-12-27

申请号：US11760867

申请日：2007-06-11

申请人： Masayuki Kozawa ,  Makoto Iida

发明人： Masayuki Kozawa ,  Makoto Iida

IPC分类号： G01M19/00

CPC分类号： G01F1/684 ,  B29C45/0025 ,  B29C45/0046 ,  B29C2045/0027 ,  B29L2031/737 ,  G01F1/6842 ,  G01F15/00 ,  G01F15/14 ,  G01F15/18 ,  G01F15/185

摘要： A laminarization lattice of thin plastic and a gate are provided in a body at respective positions so that a distance between the laminarization lattice and the gate is not less than a half of an entire length of the body, and the laminarization lattice and the body are integrally molded. That is, a configuration of the invention enables a hesitation occurring in the lattice of thin plastic to be suppressed, and a resin to be injected at single stroke of a short time to form the lattice of thin plastic.

摘要翻译： 薄片和栅极的层状晶格在各自的位置处设置在体内，使得层状晶格和栅极之间的距离不小于身体整体长度的一半，层状晶格和体是 整体模制 也就是说，本发明的结构能够抑制在薄塑料的格子中产生的犹豫，并且在短时间内单次注入的树脂形成薄塑料的格子。

公开(公告)号：US20070163487A1

公开(公告)日：2007-07-19

申请号：US10565760

申请日：2004-06-02

申请人： Makoto Iida

发明人： Makoto Iida

IPC分类号： C30B11/00 ,  C30B17/00 ,  C30B9/00 ,  C30B21/02 ,  C30B28/06

CPC分类号： C30B15/14 ,  C30B29/06

摘要： The present invention is a method for producing a single crystal by Czochralski method with pulling the single crystal from raw material melt in a crucible heated and melted by a heater, wherein the single crystal occupied by N region over an entire plane in a radial direction is produced with setting an inside diameter of the heater to be 1.26 or more times longer than an inside diameter of the crucible, and an apparatus for producing a single crystal by Czochralski method, at least, comprising a crucible for containing raw material melt, a heater surrounding the crucible so as to heat and melt the raw material melt in the crucible, and a pulling means for pulling the single crystal from the raw material melt in the crucible, wherein an inside diameter of the heater is 1.26 or more times longer than an inside diameter of the crucible. There is provided a method and an apparatus for producing a single crystal in which a pulling rate of producing a low-oxygen crystal occupied by N region can be increased, thereby productivity can be improved.

摘要翻译： 本发明是一种通过Czochralski法制造单晶的方法，其中通过在加热器加热熔化的坩埚中从原料熔体中拉出单晶，其中N区域沿径向整个平面占据的单晶为 将加热器的内径设定为坩埚的内径的1.26倍以上的方法制造，以及通过切克劳斯斯基法制造单晶的装置，至少包括用于容纳原料熔体的坩埚，加热器 包围坩埚以使坩埚中的原料熔体加热和熔化，以及用于从坩埚中的原料熔体中拉出单晶的拉动装置，其中加热器的内径比1.60或更长于 坩埚的内径。 提供了一种用于制造单晶的方法和装置，其中可以提高由N区占据的低氧晶体的产生的拉伸速率，从而可以提高生产率。

公开(公告)号：US20070000429A1

公开(公告)日：2007-01-04

申请号：US10553754

申请日：2004-04-26

申请人： Makoto Iida

发明人： Makoto Iida

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/203 ,  C30B29/06 ,  Y10S117/911

摘要： The present invention is a method for producing a single crystal by Czochralski method with pulling a seed crystal from a raw material melt, wherein when a pulling rate of pulling a single crystal is defined as V (mm/min), a temperature gradient at a solid-liquid interface is defined as G (K/mm) and a highest temperature at an interface between a crucible and a raw material melt is defined as Tmax (° C.), at least, a range of a value of V/G (mm2/K·min) including a desired defect region and/or a desired defect-free region is determined according to the Tmax (° C.), and the single crystal is pulled with controlling a value of V/G (mm2/K·min) within the determined range. There can be provided a method for producing a single crystal in which when a single crystal is pulled with controlling a value of V/G, a value of V/G including a desired defect region and/or a desired defect-free region can be determined more precisely and a single crystal with desired quality can be more surely pulled.

摘要翻译： 本发明是一种通过Czochralski法从原料熔融物中拉籽晶来制造单晶的方法，其中当拉单晶的拉伸速度定义为V（mm / min）时，在 固 - 液界面被定义为G（K / mm），在坩埚和原料熔体之间的界面处的最高温度被定义为Tmax（℃），至少V / G值的范围 根据Tmax（℃）确定包含期望的缺陷区域和/或期望的无缺陷区域（mm 2 / K·min）的单晶，并控制单晶 值（V / G（mm 2 / K·min））。 可以提供一种制造单晶的方法，其中当通过控制V / G的值拉取单晶时，包括期望的缺陷区域和/或期望的无缺陷区域的V / G的值可以是 更准确地确定，并且可以更确切地拉出具有期望质量的单晶。