摘要:
A composition for polyurethane foam comprising (a) polyols containing at least one of alkylene oxide adducts of aniline-formaldehyde condensates and alkylene oxide adducts of reduced compounds of nitrated toluenes in an amount of 30 to 70% by weight of the polyols, (b) at least one isocyanate of the formula: ##STR1## a fire retardant, together with one or more conventional catalysts, foam stabilizers, blowing agents and the like additives, can give fire retardant, high impact and heat resistant urethane foams.
摘要:
An electromagnetic wave interference shield structure molded from an electroconductive resin composition for molding, which comprises columnar pellets of a specific length, made of a bundle of iron-based metal fibers as an essential component and at least one bundle of at least another kind of electroconductive fibers of different material in a different diameter than that of the iron-based metal fibers as independent electroconductive fiber-cores, coated with a thermoplastic resin having a specific range of heat distortion temperature continuously in the longitudinal direction has a stable and distinguished shield effect for a prolonged time.
摘要:
A unitary circuit structure has an electric and/or optical transmission medium. The structure includes at least one of an optical signal transmission medium (22), an electric signal transmission medium (1, 8, 21, 41), and an electric power transmission medium (23) which are insert-molded in a plastic which forms a housing (7, 24) for electronic and electric devices and parts. The circuit structure serves as both conductive circuits and housing so that the electronic and electric devices and parts can be wired and mounted at high density.
摘要:
A method of manufacturing a circuit structure where the electric and/or optical transmission medium or media include at least one of an optical signal transmission medium, an electric signal transmission medium, and an electric power transmission medium. The transmission media are insert-molded in plastics which is a housing for electronic and electric devices and parts. The circuit structure serves both for conductive circuits and housing so that the electronic and electric devices and parts can be wired and mounted at high density.
摘要:
The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material in a crucible with a heater; maturing the melt by keeping the melt at a high temperature; growing a single crystal after dipping a seed crystal into the matured melt, wherein the heater and the crucible are relatively moved up and down in the step of maturing. As a result, there is provided a single-crystal manufacturing method that enables the generation of dislocation to be effectively suppressed and a high quality single crystal to be manufactured at good yield, particularly in case of pulling the single crystal having a large diameter, in manufacture of the single crystal.
摘要:
A workpiece boring/cutting operation aiding plate material comprising a rubber-containing styrene resin composition and an inorganic filler, wherein these are compounded in a weight ratio of 80:20 to 40:60; and a molding making use of the same.
摘要:
The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in the subsequent batch. As a result, there can be provided the system for manufacturing a silicon single crystal that can more assuredly obtain a silicon single crystal having a desired crystal quality and improve productivity or a yield and a method for manufacturing a silicon single crystal using this system.
摘要:
A bit stream which is a data string including coded data of a multiplicity of channels is output from a tuner section 22, and a recording channel selection section 23 selects coded data of a desired channel from the bit stream and output by configuring the data string. The data string output from the recording channel selection section 23 is recorded to and reproduced from a magnetic tape of a recording and reproducing section 24 by a rotary head. The coded data of the data string reproduced from the recording and reproducing section 24 is discompression-encoded by an MPEG2 decoder 25 and a video signal is output.
摘要:
In a method for producing a silicon single crystal wafer, a silicon single crystal ingot in which nitrogen is doped is grown by a Czochralski method, sliced to provide a silicon single crystal wafer, and then subjected to heat treatment to out-diffuse nitrogen on the surface of the wafer. According to a further method, a silicon single crystal ingot is grown in which nitrogen is doped by a Czochralski method, with controlling nitrogen concentration, oxygen concentration and cooling rate, and then the silicon single crystal ingot is sliced to provide a wafer. A silicon single crystal wafer is obtained by slicing a silicon single crystal ingot grown by a Czochralski method with doping nitrogen, wherein the depth of a denuded zone after gettering heat treatment or device fabricating heat treatment is 2 to 12 &mgr;m, and the bulk micro-defect density after gettering heat treatment or device fabricating heat treatment is 1×108 to 2×1010 number/cm3. A CZ silicon wafer is provided, wherein generation of crystal defects on the surface of the wafer, and oxygen precipitation, is accelerated in the bulk portion of the wafer. The controllable range of the depth of the denuded zone and the bulk micro-defect density can be enlarged.
摘要:
In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface.+-. 5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree. C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree. C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.