公开(公告)号：US08575689B2

公开(公告)日：2013-11-05

申请号：US13330835

申请日：2011-12-20

申请人： Tomohiro Mimura ,  Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Tomohiro Mimura ,  Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7397

摘要： An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region.

摘要翻译： SiC半导体器件包括衬底，漂移层，基极区域，源极区域，沟槽，栅极氧化膜，栅电极，源电极和漏电极。 基板具有作为主表面的Si面。 源区具有Si面。 沟槽从源极区域的表面提供到比基部区域更深的部分并且在一个方向上纵向延伸并且具有Si面底部。 沟槽具有倒锥形形状，至少在与基部区域接触的部分处，入口部分处的宽度比底部宽。

公开(公告)号：US08492867B2

公开(公告)日：2013-07-23

申请号：US13164246

申请日：2011-06-20

申请人： Kensaku Yamamoto ,  Naohiro Suzuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Kensaku Yamamoto ,  Naohiro Suzuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L21/20

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/407 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8613

摘要： A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.

摘要翻译： 半导体器件包括半导体衬底和电场端子部分。 半导体衬底包括衬底，设置在衬底的表面上的漂移层和设置在漂移层的表面上的基底层。 半导体衬底被分成其中设置半导体元件的单元区域和围绕单元区域的外围区域。 基底区域具有位于整个电池区域和外围区域的同一平面上的底面，并且提供位于周边区域中的电场弛豫层。 电场端子部围绕电池区域和电场缓和层的一部分，从电场缓和层的表面向漂移层贯通电场缓和层。

公开(公告)号：US08454118B2

公开(公告)日：2013-06-04

申请号：US12896721

申请日：2010-10-01

申请人： Akira Kida ,  Masahiro Sugimoto ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Takeaki Nakano ,  Susumu Hirosawa

发明人： Akira Kida ,  Masahiro Sugimoto ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Takeaki Nakano ,  Susumu Hirosawa

IPC分类号： B41J2/165

CPC分类号： B41J2/16552 ,  B41J2/16585

摘要： A supply unit is provided to supply humidified gas near a nozzle array of a line-type recording head. The flow-rate distribution of the supplied humidified gas in a direction of the nozzle array is changeable in accordance with a conveying region where a sheet is conveyed while opposing the nozzle array.

摘要翻译： 提供供应单元以在线型记录头的喷嘴阵列附近提供加湿气体。 所供应的加湿气体在喷嘴阵列的方向上的流量分布根据与喷嘴阵列相对的输送片材的输送区域而变化。

公开(公告)号：US20120132927A1

公开(公告)日：2012-05-31

申请号：US13384850

申请日：2010-08-04

申请人： Akinori Seki ,  Masahiro Sugimoto ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

发明人： Akinori Seki ,  Masahiro Sugimoto ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

IPC分类号： H01L29/161 ,  H01L21/28

CPC分类号： H01L29/7802 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/78

摘要： An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1−x−y)Si(s)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35≦y≦0.5), an expression y=−1.120x+0.5200 (0.1667≦x≦0.375), an expression y=1.778(x−0.375)2+0.1 (0≦x≦0.375) and an expression y=−2.504x2−0.5828x+0.5 (0≦x≦0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.

摘要翻译： 用于p型SiC半导体的欧姆电极，以及形成欧姆电极的方法。 欧姆电极具有欧姆电极层，其具有非晶结构，其由组成比在组成范围内的Ti（1-x-y）Si（s）C（y）三元膜制成 由表达式x = 0（0.35＆nlE; y＆nlE; 0.5）表示的两条线和两条曲线包围，表达式y = -1.120x + 0.5200（0.1667＆nlE; x＆amp; nlE; 0.375），表达式y = 1.778（x-0.375 ）2 + 0.1（0＆nlE; x＆nlE; 0.375），并且表达式y = -2.504x2-0.5828x + 0.5（0＆nlE; x＆nlE; 0.1667），并且排除由表达式x = 0表示的行。 欧姆层直接层压在p型SiC半导体的表面上。

公开(公告)号：US20110287626A1

公开(公告)日：2011-11-24

申请号：US13146208

申请日：2010-01-29

申请人： Akinori Seki ,  Masahiro Sugimoto ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

发明人： Akinori Seki ,  Masahiro Sugimoto ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

IPC分类号： H01L21/283

CPC分类号： H01L29/45 ,  H01L21/0485 ,  H01L29/1608

摘要： The invention provides an ohmic electrode of a p-type SiC semiconductor element, which includes an ohmic electrode layer that is made of Ti3SiC2, and that is formed directly on a surface of a p-type SiC semiconductor. The invention also provides a method of forming an ohmic electrode of a p-type SiC semiconductor element. The ohmic electrode includes an ohmic electrode layer that is made of Ti3SiC2, and that is formed directly on a surface of a p-type SiC semiconductor. The method includes forming a ternary mixed film that includes Ti, Si, and C in a manner such that an atomic composition ratio, Ti:Si:C is 3:1:2, on a surface of a p-type SiC semiconductor to produce a laminated film; and annealing the produced laminated film under vacuum or under an inert gas atmosphere.

摘要翻译： 本发明提供了一种p型SiC半导体元件的欧姆电极，其包括由Ti 3 SiC 2制成的欧姆电极层，其直接形成在p型SiC半导体的表面上。 本发明还提供了形成p型SiC半导体元件的欧姆电极的方法。 欧姆电极包括由Ti 3 SiC 2制成并且直接形成在p型SiC半导体的表面上的欧姆电极层。 该方法包括以使得在p型SiC半导体的表面上的原子组成比Ti:Si:C为3:1:2的方式形成包括Ti，Si和C的三元混合膜，以产生 层压膜; 并在真空或惰性气体气氛下退火生产的层压膜。

公开(公告)号：US20110256561A1

公开(公告)日：2011-10-20

申请号：US13140713

申请日：2009-11-26

申请人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Masashi Honma ,  Takehito Yamamoto ,  Hiroshi Suzuki

发明人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Masashi Honma ,  Takehito Yamamoto ,  Hiroshi Suzuki

IPC分类号： G01N33/68 ,  C07D233/64 ,  C12M1/40 ,  C07D209/20 ,  G01N33/53 ,  C12Q1/02 ,  C07C229/26 ,  C07C229/36

CPC分类号： G01N33/487 ,  C07K5/0215 ,  G01N33/497 ,  G01N33/576 ,  G01N33/6812 ,  G01N33/6893 ,  G01N2800/08 ,  G01N2800/60

摘要： A normal person (i.e. a control) and liver diseases such as drug induced liver injury, an asymptomatic hepatitis B carrier, an asymptomatic hepatitis C carrier, chronic hepatitis B, chronic hepatitis C, liver cancer, a nonalcoholic fatty liver disease (NAFLD), nonalcoholic steatohepatitis (NASH), and simple steatosis (SS) are identified by measuring the concentrations of γ-Glu-X (X represents an amino acid or an amine) peptides or the levels of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value.

摘要翻译： 正常人（即对照）和肝脏疾病如药物诱发的肝损伤，无症状乙型肝炎携带者，无症状丙型肝炎携带者，慢性乙型肝炎，慢性丙型肝炎，肝癌，非酒精性脂肪性肝病（NAFLD） 通过测量血液中γ-Glu-X（X代表氨基酸或胺）肽的浓度或AST或ALT的水平，进行例如，通过测定非酒精性脂肪性肝炎（NASH）和简单脂肪变性（SS） ，基于测量值的多重逻辑回归。

公开(公告)号：US20090233435A1

公开(公告)日：2009-09-17

申请号：US12440939

申请日：2007-09-21

申请人： Akira Kawahashi ,  Masahiro Sugimoto ,  Akinori Seki ,  Masakatsu Maeda ,  Yasuo Takahashi

发明人： Akira Kawahashi ,  Masahiro Sugimoto ,  Akinori Seki ,  Masakatsu Maeda ,  Yasuo Takahashi

IPC分类号： H01L21/285

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/78 ,  Y10S438/931

摘要： A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al3Ti of the Al3Ti-layer to form a Ti3SiC2-layer on the surface of the SiC substrate.

摘要翻译： 阐述了在SiC半导体层上形成具有良好特性的欧姆电极的方法。 在该方法中，在SiC衬底的表面上形成Ti层和Al层。 具有Ti层和Al层的SiC衬底保持在高于或等于第一温度并低于第二温度的温度，直到Ti层中的所有Ti都与Al反应。 第一个温度是Ti与Al反应形成Al3Ti的温度区的最低温度，第二个温度是Al3Ti与SiC反应形成Ti3SiC2的温度区的最低温度。 由于这种维持温度步骤的结果，在SiC衬底的表面上形成Al 3 Ti层。 该方法还包括将具有Al 3 Ti层的SiC衬底进一步加热到高于第二温度的温度。 作为进一步加热的步骤的结果，SiC衬底与Al 3 Ti层的Al 3 Ti反应以在SiC衬底的表面上形成Ti 3 SiC 2层。

公开(公告)号：US20090190155A1

公开(公告)日：2009-07-30

申请号：US12321641

申请日：2009-01-23

申请人： Masahiro Sugimoto

发明人： Masahiro Sugimoto

IPC分类号： G06K15/00 ,  G06F3/12

CPC分类号： G06F3/1285 ,  G06F3/121 ,  G06F3/1229 ,  G06F3/1234 ,  G06F3/1259

摘要： A personal computer identifies a target of a printing error in a printer. At this time, the personal computer identifies the target of the printing error in the printer as a print file, based on an identification code obtained together with status information which represents error information. The personal computer waits for the printer to restore the error. The personal computer determines whether or not the printer has restored the error based on the status information obtained from the printer on a regular basis or when driven by some event. Next, the personal computer retransmits the print file thus identified to the printer. Alternatively, the printer re-receives the print file.

摘要翻译： 个人计算机识别打印机中打印错误的目标。 此时，个人计算机基于与表示错误信息的状态信息一起获得的识别码，将打印机中的打印错误的目标识别为打印文件。 个人电脑等待打印机恢复错误。 个人计算机基于从打印机定期获得的状态信息或当某些事件驱动时，确定打印机是否已经恢复了错误。 接下来，个人计算机将如此识别的打印文件重新发送到打印机。 或者，打印机重新接收打印文件。

公开(公告)号：US06568267B2

公开(公告)日：2003-05-27

申请号：US09838287

申请日：2001-04-20

申请人： Kazumi Chida ,  Masato Hashimoto ,  Masaru Nagao ,  Hidemi Senda ,  Norihisa Okayama ,  Keiko Neki ,  Masahiro Sugimoto

发明人： Kazumi Chida ,  Masato Hashimoto ,  Masaru Nagao ,  Hidemi Senda ,  Norihisa Okayama ,  Keiko Neki ,  Masahiro Sugimoto

IPC分类号： G01C1900

CPC分类号： G01C19/5719 ,  G01P2015/0814

摘要： A sensing device, such as an angular speed detecting device, includes a vibrator for improving detection precision. The vibrator is displaceably supported on a substrate and is vibrated in the direction of an X-axis by driving electrodes. Detecting electrodes detect vibrations of the vibrator in the direction of a Y-axis caused by a Coriolis' force resulting from the angular speed occurring about a Z-axis. Each of the driving and detecting electrodes includes a movable electrode that is connected to the vibrator and that is displaced together therewith on the substrate and a fixed electrode fixed onto the substrate in such a manner as to face the movable electrode. By equalizing conductors connected to fixed electrodes of the driving electrodes and conductors connected to fixed electrodes of the detecting electrodes in length, width, and thickness, respectively, one electrical characteristic is set for those of the wiring portions which function in the same manner.

摘要翻译： 诸如角速度检测装置的感测装置包括用于提高检测精度的振动器。 振动器被可移动地支撑在基板上，并且通过驱动电极在X轴的方向上振动。 检测电极通过由围绕Z轴的角速度产生的科里奥利力产生的Y轴方向检测振动器的振动。 每个驱动和检测电极都包括一个可动电极，它连接到振子上并与基板一起位移在一起，固定电极以面对可动电极的方式固定在基板上。 通过使连接到驱动电极的固定电极的导体和连接到检测电极的固定电极的导体的长度，宽度和厚度分别相等，为相同方式起作用的布线部分设置一个电特性。

公开(公告)号：US4891344A

公开(公告)日：1990-01-02

申请号：US943350

申请日：1986-12-19

申请人： Yasumasa Wakasugi ,  Masahiro Sugimoto

发明人： Yasumasa Wakasugi ,  Masahiro Sugimoto

IPC分类号： C04B35/18 ,  C04B35/195 ,  H01B3/12 ,  H01L23/15 ,  H05K1/03

CPC分类号： C04B35/18 ,  C04B35/195 ,  H01L23/15 ,  H01L2924/0002 ,  H05K1/0306

摘要： A low dielectric constant ceramic substrate comprised of 90 to 98% of mullite (3Al.sub.2 O.sub.3. 2SiO.sub.2) and 10 to 2% of a sintering promotor comprised of 0.5 to 3% of magnesia (MgO) and 1.5 to 7% of calcium oxide (CaO).

摘要翻译： 低介电常数陶瓷基体由90％〜98％的莫来石（3Al2O3·2SiO2）和10〜2％的由0.5〜3％的氧化镁（MgO）和1.5〜7％的氧化钙（CaO）构成的烧结促进剂组成， 。