公开(公告)号：US4861552A

公开(公告)日：1989-08-29

申请号：US851878

申请日：1986-04-11

申请人： Nobuhito Masuda ,  Shigeru Nagatomo ,  Hajime Makiuchi ,  Yukio Yasuda

发明人： Nobuhito Masuda ,  Shigeru Nagatomo ,  Hajime Makiuchi ,  Yukio Yasuda

IPC分类号： G01N33/52 ,  C12M1/00 ,  G01N33/543 ,  G01N33/78 ,  C12Q1/00 ,  G01N33/548

CPC分类号： G01N33/78 ,  G01N33/54386 ,  Y10S435/805 ,  Y10S436/81

摘要： A biological reaction layer of a dry analytical element in the form of a composite porous layer in which a particulate material carrying a biologically active material fixed thereon is dispersed in a fibrous porous matrix, characterized in that the dry weight ratio of said particulate material to said fibrous material contained in said composite porous layer ranges from 1:20 to 1:0.3 and said particulate material is contained therein in the range of 1 to 60 g/m.sup.2.

摘要翻译： 复合多孔层形式的干燥分析元件的生物反应层，其中载有固定在其上的生物活性材料的颗粒材料分散在纤维多孔基质中，其特征在于，所述颗粒材料与所述 所述复合多孔层中含有的纤维状物质的含量为1:20〜1:0.3，所述粒状物质的含量为1〜60g / m 2。

公开(公告)号：US08648531B2

公开(公告)日：2014-02-11

申请号：US12926067

申请日：2010-10-25

申请人： Toshio Yokota ,  Yukio Yasuda ,  Hiroyuki Daido ,  Hiromitsu Kiriyama ,  Hajime Okada ,  Masayuki Suzuki ,  Izuru Daito

发明人： Toshio Yokota ,  Yukio Yasuda ,  Hiroyuki Daido ,  Hiromitsu Kiriyama ,  Hajime Okada ,  Masayuki Suzuki ,  Izuru Daito

IPC分类号： H01J17/18

CPC分类号： H01J61/368 ,  H01J9/326 ,  H01J61/86

摘要： A high pressure discharge lamp has a sealing portion that is made of glass and a sealing metal piece. In a method of manufacturing the high pressure discharge lamp, the sealing metal piece is irradiated with laser beam whose pulse width is 1×10−9 seconds or less, so as to carry out a surface treatment of the sealing metal piece. The sealing metal piece may have a groove that is 120 to 600 nm in depth and 450 to 1,200 nm in width.

摘要翻译： 高压放电灯具有由玻璃和密封金属片制成的密封部分。 在制造高压放电灯的方法中，用脉冲宽度为1×10-9秒以下的激光束照射密封金属片，以进行密封金属片的表面处理。 密封金属片可以具有深度为120至600nm且宽度为450至1,200nm的凹槽。

公开(公告)号：US08182127B2

公开(公告)日：2012-05-22

申请号：US12646007

申请日：2009-12-23

申请人： Yukio Yasuda ,  Taku Sumitomo ,  Masaki Kato

发明人： Yukio Yasuda ,  Taku Sumitomo ,  Masaki Kato

IPC分类号： H01S3/00 ,  F21V9/16

CPC分类号： H01J65/042 ,  G03F7/70016 ,  H01J61/025

摘要： A light source is provided. The light source includes: an elliptical reflection mirror having first and second focal points; a discharge chamber in which a luminescent substance is enclosed and which is disposed on the first focal point; a laser light generator which emits the laser light; and a laser light guide which guides the laser light from an opening side of the elliptical reflection mirror into the discharge chamber. The luminescent substance is excited by providing the laser light to the luminescent substance so as to emit light, and the light is reflected by the elliptical reflection mirror. The laser light guide is disposed in a shade area in which the light reflected by the elliptical reflection mirror is blocked by the discharge chamber.

摘要翻译： 提供光源。 光源包括：具有第一和第二焦点的椭圆反射镜; 放电室，其中发光物质被包围并设置在第一焦点上; 发射激光的激光发生器; 以及将激光从椭圆反射镜的开口侧引导到放电室的激光导向器。 通过向发光物质提供激光以发光，激发光发光物质，并且光被椭圆反射镜反射。 激光导光体设置在阴影区域中，由阴离子反射镜反射的光被排出室阻挡。

公开(公告)号：US20110134581A1

公开(公告)日：2011-06-09

申请号：US12877348

申请日：2010-09-08

申请人： Shinsuke GODO ,  Yukio Yasuda ,  Atsunobu Kawamoto

发明人： Shinsuke GODO ,  Yukio Yasuda ,  Atsunobu Kawamoto

IPC分类号： F23Q3/00

CPC分类号： F02P3/0554 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature.

摘要翻译： 一种用于点火器的功率半导体器件包括：半导体开关器件，其使电流流过点火线圈的初级侧或切断流过点火线圈的初级侧的电流; 驱动和控制半导体开关器件的集成电路; 以及温度感测元件感测半导体开关器件的温度，其中集成电路包括过热保护电路，其在正常操作期间将通过半导体开关器件的电流限制在低于通过半导体开关器件的电流的值，当温度由 温度感测元件超过预定温度。

公开(公告)号：US07030000B2

公开(公告)日：2006-04-18

申请号：US10807235

申请日：2004-03-24

申请人： Akira Sakai ,  Yukio Yasuda ,  Shigeaki Zaima ,  Mitsuo Sakashita ,  Hiroki Kondo ,  Shinsuke Sakashita

发明人： Akira Sakai ,  Yukio Yasuda ,  Shigeaki Zaima ,  Mitsuo Sakashita ,  Hiroki Kondo ,  Shinsuke Sakashita

IPC分类号： H01L21/31 ,  H01L29/772

CPC分类号： H01L21/3247 ,  C30B29/16 ,  C30B33/02 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.

摘要翻译： 给定的金属氧化物膜在衬底上外延生长。 然后，对基板和金属氧化物膜进行热处理以将基板的构成元件与金属氧化物膜的构成金属氧化物元件混合，并通过混合该金属氧化物膜而在基板上形成高介电常数的金属氧化物膜 构成要素。

公开(公告)号：US06921958B2

公开(公告)日：2005-07-26

申请号：US10689058

申请日：2003-10-21

申请人： Yukio Yasuda

发明人： Yukio Yasuda

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/07 ,  H01L27/088 ,  H01L29/78 ,  H01L31/0328 ,  H03K17/04 ,  H03K17/0812 ,  H01L27/95

CPC分类号： H01L27/0716 ,  H03K17/0406 ,  H03K17/08128

摘要： A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive signal of the IGBT (Z1), a Schottky barrier diode (D2) having an anode connected to the input terminal (P1) and a cathode connected to an input terminal (B11) of the control circuit (B1), and a p-channel MOSFET (T1) for shorting both ends of the Schottky barrier diode (D2) when the voltage of the drive signal input to the input terminal (P1) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.

摘要翻译： 通过使用结隔离技术，在同一半导体衬底上形成用于驱动IGBT（Z 1）的IGBT（Z 1）和控制电路（B 1）的半导体装置包括：输入端子（P1） IGBT（Z 1）的驱动信号，具有连接到输入端子（P 1）的阳极的肖特基势垒二极管（D 2）和连接到控制电路（B1）的输入端子（B11）的阴极， 以及当输入到输入端子（P1）的驱动信号的电压高于预定电压时，用于短路肖特基势垒二极管（D 2）两端的p沟道MOSFET（T 1） 防止寄生元件的上升，并且可以减小输入信号的传输损耗。

公开(公告)号：US20050104153A1

公开(公告)日：2005-05-19

申请号：US10853230

申请日：2004-05-26

申请人： Yukio Yasuda

发明人： Yukio Yasuda

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L29/739 ,  H01L29/78 ,  H01L29/8605 ,  H03K17/082 ,  H03K17/56 ,  H01L29/423

CPC分类号： H03K17/0828 ,  H01L29/7395 ,  H01L29/8605

摘要： In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.

摘要翻译： 在包括控制输入端子，GND端子和输出端子的半导体器件中，并且还具有IGBT和驱动IGBT的控制电路，接地电阻和温度补偿电阻在控制输入端彼此串联连接 端子和GND端子。 在设置有IGBT的半导体衬底中形成的绝缘膜上提供的多晶硅电阻用作接地电阻。 通过将杂质注入所述半导体衬底并进行扩散操作而获得的扩散电阻用作温度补偿电阻。

公开(公告)号：US20050087792A1

公开(公告)日：2005-04-28

申请号：US10925966

申请日：2004-08-26

申请人： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

发明人： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

IPC分类号： C01B33/027 ,  C30B1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792

CPC分类号： B82Y10/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/0262 ,  H01L29/40114 ,  H01L29/42332

摘要： A silicon oxide layer is formed at a surface region of a silicon substrate. Then, an amorphous silicon layer 13 is formed preferably in a thickness of 1 nm or below on the silicon substrate via the silicon oxide layer. Then, the amorphous silicon layer 13 is exposed to a silane gas preferably with heating the silicon substrate within a temperature range of 400-800° C. to form a high density and minute silicon nanocrystal.

摘要翻译： 在硅衬底的表面区域形成氧化硅层。 然后，通过硅氧化物层，在硅衬底上优选形成1nm以下的非晶硅层13。 然后，非晶硅层13优选在400-800℃的温度范围内加热硅衬底而暴露于硅烷气体，以形成高密度和微小的硅纳米晶体。

公开(公告)号：US06720731B2

公开(公告)日：2004-04-13

申请号：US10229003

申请日：2002-08-28

申请人： Yukio Yasuda ,  Yoshinoir Aiura

发明人： Yukio Yasuda ,  Yoshinoir Aiura

IPC分类号： H01J1720

CPC分类号： H01J61/0732 ,  G03F7/70016 ,  H01J61/20 ,  H01J61/86

摘要： A short arc mercury discharge lamp including an arc tube filled with at least mercury and a rare gas, a cathode and an anode positioned opposite to each other within the arc tube, the cathode having an tapered area which tapers in a direction towards the anode and a projection which protrudes from the tapered area in a direction towards the anode. The amount of mercury to be added in the arc tube is in a range of 0.2≦n≦52, where n is the weight (mg/cm3) of the mercury per unit of volume, and a pressure of the rare gas to be added in the arc tube is in a range of 0.1≦p≦800, where p is the pressure (kPa) of the rare gas at an ambient temperature of 25° C.

摘要翻译： 一种短弧汞灯放电灯，其包括在电弧管内至少填充有汞和稀有气体的电弧管，阴极和阳极，阴极具有朝向阳极的方向逐渐变细的锥形区域， 从朝向阳极的方向从锥形区域突出的突起。 添加在电弧管中的汞的量在0.2 <= n <52的范围内，其中n是每单位体积的汞的重量（mg / cm 3），以及 添加到电弧管中的稀有气体在0.1 <= p <= 800的范围内，其中p是在25℃的环境温度下稀有气体的压力（kPa）

公开(公告)号：US06218709B1

公开(公告)日：2001-04-17

申请号：US09326605

申请日：1999-06-07

申请人： Yukio Yasuda

发明人： Yukio Yasuda

IPC分类号： H01L2976

CPC分类号： H01L29/7395 ,  H01L29/7404

摘要： An inexpensive semiconductor device in which an insulated gate bipolar transistor and a terminal, capable of drawing out a limited current or voltage from a collector of the insulated gate bipolar transistor, are mounted on a semiconductor substrate, and a semiconductor circuit using the same. The semiconductor device comprising an insulated gate bipolar transistor having a gate formed through a gate insulator on an n-type semiconductor layer formed on a p-type semiconductor substrate, and a thyristor, the thyrister comprising a p-type region where a p-type impurity diffuses over a part of the n-type semiconductor layer, an n-type region where an n-type impurity diffuses over a part of the p-type region, an emitter electrode formed contiguously to the n-type region, a base electrode formed contiguously to the p-type region, and a collector electrode which is used in common with the insulated gate bipolar transistor.

摘要翻译： 一种廉价的半导体器件，其中能够从绝缘栅双极晶体管的集电极引出有限的电流或电压的绝缘栅双极晶体管和端子安装在半导体衬底上，并使用该半导体器件的半导体电路。 半导体器件包括绝缘栅双极晶体管，其具有通过形成在p型半导体衬底上的n型半导体层上的栅极绝缘体形成的栅极，以及晶闸管，所述可控硅包括p型区域，其中p型杂质 扩散到n型半导体层的一部分上，n型杂质在p型区域的一部分扩散的n型区域，与n型区域连续形成的发射极，形成的基极 邻接于p型区域，以及与绝缘栅双极晶体管共同使用的集电极。