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73 条记录 (耗时 0.037 秒)

    PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING
    52.
    发明申请
    PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING 失效
    ECP镀层选择生长膜的工艺

    公开(公告)号：US20090215264A1

    公开(公告)日：2009-08-27

    申请号：US12037578

    申请日：2008-02-26

    申请人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

    发明人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76879 ,  C25D5/02 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76862 ,  H01L21/76873

    摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.

    摘要翻译： 提供了在电镀工艺中控制金属在基片的场区上沉积的方法。 在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。 场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。 在另一方面，可以使用可以是金属的电阻层来代替电介质。 在另一方面，导电场区域的表面被修改以相对于开口的侧壁和底部改变其化学势。

    APPARATUS AND METHOD FOR DEPOSITING ELECTRICALLY CONDUCTIVE PASTING MATERIAL
    54.
    发明申请
    APPARATUS AND METHOD FOR DEPOSITING ELECTRICALLY CONDUCTIVE PASTING MATERIAL 有权
    用于沉积电导电材料的装置和方法

    公开(公告)号：US20090142512A1

    公开(公告)日：2009-06-04

    申请号：US11947459

    申请日：2007-11-29

    申请人： John FORSTER ,  Anantha Subramani ,  Wei D. Wang

    发明人： John FORSTER ,  Anantha Subramani ,  Wei D. Wang

    IPC分类号： H05H1/24 ,  B05B5/00

    CPC分类号： H01J37/32477 ,  C23C14/34 ,  H01J37/32495 ,  H01L21/02043 ,  H01L21/67005

    摘要： A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

    摘要翻译： 描述了一种用于减少等离子体处理室中的颗粒污染的方法和装置。 在一个实施例中，提供了一种粘贴盘，其包括高电阻率材料的盘形基底，其具有施加到基部的顶表面的导电粘贴材料层，使得粘贴材料层部分地覆盖基底的顶表面 基础。 溅射蚀刻粘贴盘以在等离子体处理室的内表面上的广泛区域上沉积导电粘贴材料，同时最小化用于在衬底处理期间优化溅射蚀刻工艺的介电部件上的沉积。

    METHOD AND APPARATUS FOR ELECTRIC MOTOR TORQUE MONITORING
    56.
    发明申请
    METHOD AND APPARATUS FOR ELECTRIC MOTOR TORQUE MONITORING 有权
    电动机扭矩监测方法与装置

    公开(公告)号：US20090066281A1

    公开(公告)日：2009-03-12

    申请号：US11853113

    申请日：2007-09-11

    申请人： Stephen T. West ,  Wei D. Wang ,  Sean E. Gleason

    发明人： Stephen T. West ,  Wei D. Wang ,  Sean E. Gleason

    IPC分类号： H02P7/00 ,  G08B21/00

    CPC分类号： B60L3/00 ,  B60L2210/20 ,  H02P29/032 ,  Y02T10/642 ,  Y02T10/725

    摘要： Methods and apparatus are provided for monitoring an achieved motor torque produced by an electric motor. The method includes determining the achieved motor torque based on a rotor position of the electric motor and a phase current of the electric motor when the motor speed is not greater than a first pre-determined threshold, determining the achieved motor torque based on a loss-compensated power supplied to the electric motor when the motor speed is greater than the first pre-determined threshold, comparing the achieved motor torque with the torque command, and indicating a fault when the achieved motor torque is not within a pre-determined margin of the torque command.

    摘要翻译： 提供了用于监测由电动机产生的实现的电动机转矩的方法和装置。 该方法包括：当电动机速度不大于第一预定阈值时，基于电动机的转子位置和电动机的相电流来确定实现的电动机转矩，基于损耗电流确定实现的电动机转矩， 当电动机速度大于第一预定阈值时，向电动机提供的补偿功率，将所获得的电动机转矩与转矩指令进行比较，并且当实现的电动机转矩不在预定阈值的预定余量内时，指示故障 扭矩指令。

    Diffusion enhanced ion plating for copper fill
    57.
    发明授权
    Diffusion enhanced ion plating for copper fill 失效
    扩散增强离子电镀铜填充

    公开(公告)号：US06884329B2

    公开(公告)日：2005-04-26

    申请号：US10340564

    申请日：2003-01-10

    申请人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

    发明人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

    IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768

    CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76877

    摘要： A method of filling copper into a high-aspect ratio via by a plasma sputter process and allowing the elimination of electrochemical plating. In one aspect of the invention, the sputtering is divided into a first step performed at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole, and a second step performed at a higher temperature, e.g., at least 200° C. and with at least portions of low wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma. In still another aspect, copper sputtering, even in the final fill phase, is performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter from the corners.

    摘要翻译： 一种通过等离子体溅射工艺将铜填充到高纵横比通孔并允许消除电化学电镀的方法。 在本发明的一个方面，溅射被分为在不超过100℃的低温下进行的第一步骤和至少部分高晶片偏压，从而填充孔的下半部分，并且第二步骤 步骤在较高的温度例如至少200℃进行，并且至少部分低晶片偏置以完成孔填充。 在本发明的另一方面，将扩散促进气体如氢气加入到铜溅射等离子体中。 在另一方面，即使在最终填充阶段，铜溅射也是通过多个低级和高级底座偏压循环进行的，以便在暴露的拐角上沉积铜并从拐角溅射。

    Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities
    58.
    发明授权
    Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities 失效
    磁约束金属等离子体溅射源，具有离子和中性密度的磁控制

    公开(公告)号：US06758949B2

    公开(公告)日：2004-07-06

    申请号：US10241114

    申请日：2002-09-10

    申请人： Wei D. Wang ,  Praburam Gopalraja ,  Jianming Fu

    发明人： Wei D. Wang ,  Praburam Gopalraja ,  Jianming Fu

    IPC分类号： C23C1435

    CPC分类号： C23C14/345 ,  C23C14/221 ,  C23C14/35 ,  C23C14/352 ,  H01J37/3266 ,  H01J37/3402

    摘要： A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D.C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.

    摘要翻译： 金属气相沉积反应器包括具有包括天花板和侧壁的主室外壳的初级反应室。 反应器还包括二次反应器室，该二次反应器室具有二次室外壳和在待沉积在所述半导体晶片上的金属物质形成的次级室内的金属源靶。 工艺气体入口将工艺气体提供到靠近所述金属源靶的工作表面的次级室的区域中。 连接在所述金属源靶和所述次室壳体的导电部分之间的直流电源具有足够的功率以支持在金属源靶的工作表面附近的工艺气体的离子化，从而形成等离子体，从而将金属离子和中性粒子从 金属源目标的工作面。

    System and method of measuring a sensor offset
    59.
    发明授权
    System and method of measuring a sensor offset 有权
    测量传感器偏移的系统和方法

    公开(公告)号：US08983788B2

    公开(公告)日：2015-03-17

    申请号：US12895924

    申请日：2010-10-01

    申请人： Wei D. Wang ,  Steven E. Schulz ,  Jeffrey David ,  Jackie L Cui ,  Andrew M. Zettel ,  Hanne Buur

    发明人： Wei D. Wang ,  Steven E. Schulz ,  Jeffrey David ,  Jackie L Cui ,  Andrew M. Zettel ,  Hanne Buur

    IPC分类号： G01D18/00

    CPC分类号： G01D18/006

    摘要： A method includes detecting a first event and executing a first procedure to identify a sensor offset in response to detecting the first event. The method further includes determining, via a computing device, whether the sensor offset was measured during the execution of the first procedure, scheduling a second procedure to execute in response to detecting a second event if the sensor offset was not measured during the first procedure, and scheduling the first procedure to execute in response to detecting a subsequent occurrence of the first event if the sensor offset was measured during the first procedure.

    摘要翻译： 一种方法包括检测第一事件并且执行第一过程以响应于检测到第一事件来识别传感器偏移。 该方法还包括经由计算设备确定在执行第一过程期间是否测量了传感器偏移量，如果在第一过程期间未测量传感器偏移量，则调度响应于检测到第二事件执行的第二过程， 以及如果在所述第一过程期间测量了所述传感器偏移量，则响应于检测到所述第一事件的后续出现来调度所述第一过程以执行。