利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

76 条记录 (耗时 0.036 秒)

    Quantum tunneling cantilever accelerometer
    51.
    发明授权
    Quantum tunneling cantilever accelerometer 失效
    量子隧道悬臂加速度计

    公开(公告)号：US4638669A

    公开(公告)日：1987-01-27

    申请号：US731715

    申请日：1985-05-07

    申请人： Stephen Y. Chou

    发明人： Stephen Y. Chou

    IPC分类号： G01P15/08

    CPC分类号： G01P15/0894

    摘要： A highly sensitive accelerometer is disclosed in which the current is measured across a pair of electrodes resulting from voltage pulses from a pulse generator. The electrodes are located within a vacuum chamber. One of the electrodes is cantilevered and has its free end suspended over the other fixed electrode. The amount of current through the vacuum gap between the electrodes is determinative of acceleration since the current is an exponential function of the distance between the electrodes and the distance between the electrodes changes linearly with acceleration.

    摘要翻译： 公开了一种高灵敏度的加速度计，其中由脉冲发生器的电压脉冲产生的一对电极上测量电流。 电极位于真空室内。 其中一个电极是悬臂的，其自由端悬挂在另一个固定电极上。 通过电极之间的真空间隙的电流量是加速度的决定因素，因为电流是电极之间的距离的指数函数，并且电极之间的距离随加速度而线性变化。

    Lithographic method for forming a pattern
    52.
    发明授权
    Lithographic method for forming a pattern 有权
    用于形成图案的平版印刷方法

    公开(公告)号：US08728380B2

    公开(公告)日：2014-05-20

    申请号：US11932924

    申请日：2007-10-31

    申请人： Stephen Y. Chou

    发明人： Stephen Y. Chou

    IPC分类号： B29C59/02

    CPC分类号： B29C59/022 ,  B29C59/026 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： A lithographic method for forming a pattern within a surface on a substrate includes providing a substrate with a degradable material, molding the material to imprint a pattern thereon, depositing a layer of a second material over the imprinted pattern, removing portions of the layer of the second material to expose portions of the imprinted pattern of degradable material and removing portions of the exposed degradable material to leave an open pattern in the layer of second material.

    摘要翻译： 用于在衬底表面内形成图案的光刻方法包括：提供具有可降解材料的衬底，模制该材料以在其上印刷图案，在该压印图案上沉积一层第二材料， 第二材料暴露可压缩材料的压印图案的部分并去除暴露的可降解材料的部分以在第二材料层中留下开放图案。

    Process for adjusting the size and shape of nanostructures
    53.
    发明授权
    Process for adjusting the size and shape of nanostructures 有权
    调整纳米结构尺寸和形状的工艺

    公开(公告)号：US08163656B2

    公开(公告)日：2012-04-24

    申请号：US12419881

    申请日：2009-04-07

    申请人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    发明人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    IPC分类号： H01L21/477

    CPC分类号： H01L21/0272 ,  B81C1/00031 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/0273 ,  Y10S977/888 ,  Y10S977/90

    摘要： In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    摘要翻译： 根据本发明，通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下，软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。

    Release surfaces, particularly for use in nanoimprint lithography
    54.
    发明授权
    Release surfaces, particularly for use in nanoimprint lithography 有权
    释放表面，特别适用于纳米压印光刻

    公开(公告)号：US08128856B2

    公开(公告)日：2012-03-06

    申请号：US11773719

    申请日：2007-07-05

    申请人： Stephen Y. Chou

    发明人： Stephen Y. Chou

    IPC分类号： B29C33/64

    CPC分类号： B29C59/022 ,  B29C33/60 ,  B29C33/64 ,  B29C37/0053 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： A method to forming a pattern on a surface of a substrate, including the steps of providing a mold having a molding surface comprised of one or more protruding features and one or more recessed features for imprinting a pattern. The pattern comprising at least one feature having a lateral dimension of about 2000 nanometer or less. Providing a monomolecular anti-adhesive layer on the mold which is either continuous or discontinuous, prior to depositing a hardenable, flowable material onto the mold and recessed features. The mold and substrate are pressed together, while the flowable material hardens and adheres to the moldable material and the substrate. Upon separation of the mold and the substrate, the hardened material remains on the substrate.

    摘要翻译： 一种在基板的表面上形成图案的方法，包括以下步骤：提供具有由一个或多个突出特征构成的成型表面的模具和用于印刷图案的一个或多个凹陷特征。 所述图案包括具有约2000纳米或更小的横向尺寸的至少一个特征。 在将可硬化的可流动材料沉积到模具和凹陷特征之前，在模具上提供连续或不连续的单分子防粘层。 将模具和基材压在一起，同时可流动的材料硬化并粘附到可模制的材料和基材上。 在分离模具和基材时，硬化的材料保留在基材上。

    METHODS FOR FABRICATING LARGE AREA NANOIMPRINT MOLDS
    56.
    发明申请
    METHODS FOR FABRICATING LARGE AREA NANOIMPRINT MOLDS 有权
    用于制作大面积纳米薄膜的方法

    公开(公告)号：US20100078855A1

    公开(公告)日：2010-04-01

    申请号：US12473115

    申请日：2009-05-27

    申请人： Stephen Y. Chou ,  Peng Can ,  Wendi Li ,  Shufung Bai

    发明人： Stephen Y. Chou ,  Peng Can ,  Wendi Li ,  Shufung Bai

    IPC分类号： B29C59/02

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  Y10S977/887

    摘要： This invention relates to the fabrication of large area nanoimprint molds having complex patterns with minimal or no use of direct-writing, such as electron beam lithography, ion, laser beam, or mechanical beam lithography. This can be accomplished by forming a pattern of simple nanoscale features and converting the simple features into more complex nanoscale features by a process comprising shadow deposition. The process may also include steps of uniform deposition, etching and smoothing depending on the shape of the complex features.

    摘要翻译： 本发明涉及具有复杂图案的大面积纳米压印模具的制造，其具有最少或不使用直接写入，例如电子束光刻，离子，激光束或机械光束光刻。 这可以通过形成简单的纳米尺度特征的图案并通过包括阴影沉积的方法将简单特征转换成更复杂的纳米尺度特征来实现。 该方法还可以包括根据复杂特征的形状的均匀沉积，蚀刻和平滑的步骤。

    Process for Adjusting the Size and Shape of Nanostructures
    57.
    发明申请
    Process for Adjusting the Size and Shape of Nanostructures 有权
    调整纳米结构尺寸和形状的工艺

    公开(公告)号：US20100009541A1

    公开(公告)日：2010-01-14

    申请号：US12419881

    申请日：2009-04-07

    申请人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    发明人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    IPC分类号： H01L21/306 ,  B29C59/02 ,  B44C1/22 ,  G03F1/00 ,  H01L21/312

    CPC分类号： H01L21/0272 ,  B81C1/00031 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/0273 ,  Y10S977/888 ,  Y10S977/90

    摘要： In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    摘要翻译： 根据本发明，通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下，软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。

    MICROSCALE PATTERNING AND ARTICLES FORMED THEREBY
    59.
    发明申请
    MICROSCALE PATTERNING AND ARTICLES FORMED THEREBY 审中-公开
    MICROSCALE PATTERNING和文章形成

    公开(公告)号：US20090084492A1

    公开(公告)日：2009-04-02

    申请号：US12136964

    申请日：2008-06-11

    申请人： Stephen Y. Chou ,  Lei Zhuang

    发明人： Stephen Y. Chou ,  Lei Zhuang

    IPC分类号： B32B37/04

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T156/1002 ,  Y10T428/1157 ,  Y10T428/268

    摘要： The present invention is directed to a lithographic method and apparatus for creating micrometer sub-micrometer patterns in a thin film coated on a substrate. The invention utilizes the self-formation of periodic, supramolecular pillar arrays (49) in a melt to form the patterns. The self-formation is induced by placing a plate or mask (35) a distance above the polymer films (33). The pillars bridge the plate and the mask, having a height equal to the plate-mask separation and preferably 2-7 times that of the film's initial thickness. If the surface of the mask has a protruding pattern, the pillar array is formed with the edge of the pillar array aligned to the boundary of the mask pattern.

    摘要翻译： 本发明涉及一种用于在涂覆在基底上的薄膜中产生微米亚微米图案的光刻方法和装置。 本发明利用周期性超分子柱阵列（49）在熔体中的自形成以形成图案。 通过将板或掩模（35）放置在聚合物膜（33）上方一段距离来诱导自形成。 柱子桥接板和面具，其高度等于平板掩模分离，优选为膜初始厚度的2-7倍。 如果掩模的表面具有突出图案，则柱阵列形成为与阵列图案的边界对准的柱阵列的边缘。

    RELEASE SURFACES, PARTICULARLY FOR USE IN NANOIMPRINT LITHOGRAPHY
    60.
    发明申请
    RELEASE SURFACES, PARTICULARLY FOR USE IN NANOIMPRINT LITHOGRAPHY 审中-公开

    公开(公告)号：US20080217813A1

    公开(公告)日：2008-09-11

    申请号：US11932772

    申请日：2007-10-31

    申请人： Stephen Y. Chou

    发明人： Stephen Y. Chou

    IPC分类号： B29C59/00

    CPC分类号： B29C33/62 ,  B29C43/003 ,  B29C43/021 ,  B29C43/222 ,  B29C43/52 ,  B29C2043/025 ,  B29C2043/3211 ,  B29C2043/568 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： The addition of thin coatings (less than and approaching monomolecular coatings) of persistent release materials comprising preferred compounds of the formula: RELEASE-M(X)n-1— RELEASE-M(X)n-m-1Qm, Or RELEASE-M(OR)n-1—, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal atom, semiconductor atom, or semimetal atom; X is a halogen or cyano, especially Cl, F, or Br; Q is hydrogen or alkyl group; M is the number Q represents R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and N is the valence −1 of M, and n-m-1 is at least 1 provides good release properties. The coated substrates are particularly good for a lithographic method and apparatus for creating ultra-fine (sub-25 nm) patters in a thin film coated on a substrate is provided, in which a mold having at least one protruding feature is pressed into a thin film carried on a substrate. The protruding feature in the mold creates a recess of the thin film. The mold is removed from the film. The thin film then is processed such that the thin film in the recess is removed exposing the underlying substrate. Thus, the patterns in the mold is replaced in the thin film, completing the lithography. The patterns in the thin film will be, in subsequent process, reproduced in the substrate or in another material which is added onto the substrate.