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83 条记录 (耗时 0.034 秒)

    Lead plating method for GMR head manufacture
    51.
    发明授权
    Lead plating method for GMR head manufacture 失效
    GMR头制造的铅电镀方法

    公开(公告)号：US06973712B2

    公开(公告)日：2005-12-13

    申请号：US10093106

    申请日：2002-03-07

    申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

    发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

    IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  H04R31/00

    CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

    摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

    摘要翻译： GMR结构的Lead Overlay设计中的一个主要问题是磁性读取磁道宽度比物理读取磁道宽度宽。 这是由于引线和GMR层之间的高界面电阻，这是现有技术方法的不可避免的副作用。 本发明使用在湿蚀刻之前的电镀来制造引线。 该方法仅需要在GMR层上的薄保护层，以确保接口电阻最小。 使用湿表面清洁可以避免溅射缺陷，电镀与此相容，因此清洁表面被保留只需要一个光刻步骤来定义轨道，因为没有重新沉积。

    Self-alignment scheme for enhancement of CPP-GMR
    52.
    发明申请
    Self-alignment scheme for enhancement of CPP-GMR 失效
    用于增强CPP-GMR的自对准方案

    公开(公告)号：US20050111143A1

    公开(公告)日：2005-05-26

    申请号：US10718372

    申请日：2003-11-20

    申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/1278 ,  Y10T29/49052

    摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

    摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

    Etching process to selectively remove copper plating seed layer
    56.
    发明授权
    Etching process to selectively remove copper plating seed layer 失效
    蚀刻工艺选择性去除镀铜种子层

    公开(公告)号：US06428719B1

    公开(公告)日：2002-08-06

    申请号：US09487454

    申请日：2000-01-19

    申请人： Xuehua Wu ,  Wensen Li ,  Si-Tuan Lam ,  Henry C. Chang ,  Kochan Ju ,  Jei-Wei Chang

    发明人： Xuehua Wu ,  Wensen Li ,  Si-Tuan Lam ,  Henry C. Chang ,  Kochan Ju ,  Jei-Wei Chang

    IPC分类号： C23F100

    CPC分类号： F16B7/025 ,  C23F1/18 ,  G11B5/17 ,  G11B5/313 ,  G11B5/3163 ,  H05K1/056 ,  H05K3/067 ,  Y10T403/7069

    摘要： Write head coils for magnetic disk systems are commonly formed through electroplating onto a seed layer in the presence of a photoresist mask. It is then necessary to remove the seed layer everywhere except under the coil itself. The present invention achieves this through etching in a solution of ammonium persulfate to which has been added the complexing agent 1,4,8,11 tetraazundecane. This suppresses the reduction of Cu++ to Cu, thereby increasing the dissolution rate of copper while decreasing that of nickel-iron. Two ways of implementing this are described—adding the complexing agent directly to the ammonium persulfate and introducing the 1,4,8,11 tetraazundecane through a dipping process that precedes conventional etching in the ammonium persulfate.

    摘要翻译： 用于磁盘系统的写头线圈通常在光致抗蚀剂掩模的存在下通过电镀到种子层上形成。 因此，除了线圈本身以外，还需要除去种子层。 本发明通过在已加入络合剂1,4,8,11四氮十烷的过硫酸铵溶液中进行蚀刻来实现。 这抑制了Cu ++还原为Cu，从而提高了铜的溶解速度，同时降低了镍铁的溶解速度。 描述了实现这一点的两种方法 - 将络合剂直接加入到过硫酸铵中，并通过在过硫酸铵中常规蚀刻之前的浸渍方法引入1,4,8,11四氮杂十一烷。

    Corrosion inhibitor of NiCu for high performance writers
    57.
    发明授权
    Corrosion inhibitor of NiCu for high performance writers 失效
    NiCu防腐剂用于高性能作者

    公开(公告)号：US06395458B2

    公开(公告)日：2002-05-28

    申请号：US09756015

    申请日：2001-01-08

    申请人： Xuehua Wu ,  Yi-Chun Liu ,  Jei-Wei Chang ,  Kochan Ju

    发明人： Xuehua Wu ,  Yi-Chun Liu ,  Jei-Wei Chang ,  Kochan Ju

    IPC分类号： G03F732

    CPC分类号： G03F7/322 ,  C23F1/02 ,  G11B5/3163 ,  H05K3/064

    摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.

    摘要翻译： 通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。 描述实现这一点的两种方式。 在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。 在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA溶液中，随后立即施加光刻胶并进行处理，包括正常进行。 对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

    Corrosion inhibitor for NiCu for high performance writers
    58.
    发明授权
    Corrosion inhibitor for NiCu for high performance writers 失效
    NiCu用于高性能作者的防腐蚀剂

    公开(公告)号：US06207350B1

    公开(公告)日：2001-03-27

    申请号：US09483931

    申请日：2000-01-18

    申请人： Xuehua Wu ,  Yi-Chun Liu ,  Jei-Wei Chang ,  Kochan Ju

    发明人： Xuehua Wu ,  Yi-Chun Liu ,  Jei-Wei Chang ,  Kochan Ju

    IPC分类号： G03F732

    CPC分类号： G03F7/322 ,  C23F1/02 ,  G11B5/3163 ,  H05K3/064

    摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.

    摘要翻译： 通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。 描述实现这一点的两种方式。 在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。 在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA的溶液中，随后立即施加光致抗蚀剂，并且包括显影在内的处理正常进行。 对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

    Ozone-assisted lithography process with image enhancement for CPP head manufacturing
    59.
    发明授权
    Ozone-assisted lithography process with image enhancement for CPP head manufacturing 有权
    用于CPP头制造的图像增强的臭氧辅助光刻工艺

    公开(公告)号：US07781152B2

    公开(公告)日：2010-08-24

    申请号：US10900942

    申请日：2004-07-28

    申请人： Chao-Peng Chen ,  Rina Kaji ,  Jei-Wei Chang

    发明人： Chao-Peng Chen ,  Rina Kaji ,  Jei-Wei Chang

    IPC分类号： G03F7/00

    CPC分类号： G03F7/094 ,  G03F7/203 ,  G03F7/36 ,  G03F7/405

    摘要： A method for forming a bi-layer lift-off mask, including a hardened photoresistive stencil layer on a PMGI layer, for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns and TMJ MRAM devices of similar critical dimensions. The stencil portion of the mask includes a narrow portion with sharply defined edge and corners which are formed, without rounding or extreme undercut, by a photolithographic process which includes the formation, in a first development process, of auxiliary pattern pieces over the corners of the stencil and a subsequent oxidation in ozone for removing those auxiliary pattern pieces and obtaining sharply defined edge and corners and a controlled dissolution of the PMGI layer.

    摘要翻译： 一种用于形成双层剥离掩模的方法，包括在PMGI层上的硬化的光致抗蚀剂蜡纸层，用于制造具有小于0.1微米的轨道宽度的GMR读取头传感器和具有相似关键尺寸的TMJ MRAM装置。 掩模的模版部分包括具有明显限定的边缘的窄部分和通过光刻工艺形成的没有圆形或极端底切的拐角，其包括在第一显影过程中形成辅助图案片 蜡纸和随后的臭氧中的氧化，以去除这些辅助图案片并获得锐利定义的边缘和角部以及受控的PMGI层的溶解。

    Ozone-assisted lithography process with image enhancement for CPP head manufacturing
    60.
    发明申请
    Ozone-assisted lithography process with image enhancement for CPP head manufacturing 有权
    用于CPP头制造的图像增强的臭氧辅助光刻工艺

    公开(公告)号：US20060024618A1

    公开(公告)日：2006-02-02

    申请号：US10900942

    申请日：2004-07-28

    申请人： Chao-Peng Chen ,  Rina Kaji ,  Jei-Wei Chang

    发明人： Chao-Peng Chen ,  Rina Kaji ,  Jei-Wei Chang

    IPC分类号： G03F7/00

    CPC分类号： G03F7/094 ,  G03F7/203 ,  G03F7/36 ,  G03F7/405

    摘要： A method for forming a bi-layer lift-off mask, including a hardened photoresistive stencil layer on a PMGI layer, for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns and TMJ MRAM devices of similar critical dimensions. The stencil portion of the mask includes a narrow portion with sharply defined edge and corners which are formed, without rounding or extreme undercut, by a photolithographic process which includes the formation, in a first development process, of auxiliary pattern pieces over the corners of the stencil and a subsequent oxidation in ozone for removing those auxiliary pattern pieces and obtaining sharply defined edge and corners and a controlled dissolution of the PMGI layer.

    摘要翻译： 一种用于形成双层剥离掩模的方法，包括在PMGI层上的硬化的光致抗蚀剂蜡纸层，用于制造具有小于0.1微米的轨道宽度的GMR读取头传感器和具有相似关键尺寸的TMJ MRAM装置。 掩模的模版部分包括具有明显限定的边缘的窄部分和通过光刻工艺形成的没有圆形或极端底切的拐角，其包括在第一显影过程中形成辅助图案片 蜡纸和随后的臭氧中的氧化，以去除这些辅助图案片并获得锐利定义的边缘和角部以及受控的PMGI层的溶解。