公开(公告)号：US06903353B2

公开(公告)日：2005-06-07

申请号：US10125439

申请日：2002-04-19

申请人： Masato Muraki ,  Yasunari Sohda ,  Shinichi Hashimoto

发明人： Masato Muraki ,  Yasunari Sohda ,  Shinichi Hashimoto

IPC分类号： G03F7/20 ,  H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/153

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/31774

摘要： A high-precision multi-charged-particle-beam exposure apparatus has a charged particle source (ES) that emits a charged particle beam. An aperture array (AA) having plural apertures divides the charged particle beam from the charged particle source (ES) into plural charged particle beams and a lens array (LA) having plural electron lens forms plural intermediate images of the charged particle source (ES) on substantially one plane with the plural charged particle beams from the aperture array (AA). A blanker array (BA) located on the plane where the plurality of intermediate images are to be formed has plural blankers, and a reduction electron optical system that reduces and projects the images of the charged particle source (ES) onto a substrate.

摘要翻译： 高精度多带电粒子束曝光装置具有发射带电粒子束的带电粒子源（ES）。 具有多个孔的孔径阵列（AA）将带电粒子束从带电粒子源（ES）分割成多个带电粒子束，并且具有多个电子透镜的透镜阵列（LA）形成带电粒子源（ES）的多个中间图像， 在基本上一个平面上具有来自孔径阵列（AA）的多个带电粒子束。 位于要形成多个中间图像的平面上的消隐阵列（BA）具有多个消隐器，以及还原电子光学系统，其将带电粒子源（ES）的图像减少并投影到基板上。

公开(公告)号：US06667486B2

公开(公告)日：2003-12-23

申请号：US10219769

申请日：2002-08-16

申请人： Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin'ichi Hashimoto

发明人： Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin'ichi Hashimoto

IPC分类号： H01J3708

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/304 ,  H01J37/3177

摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.

摘要翻译： 本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。 在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使 由多个电子束中的每一个形成的图案的图案数据的位置。

公开(公告)号：US06573520B1

公开(公告)日：2003-06-03

申请号：US09534301

申请日：2000-03-23

申请人： Hidetoshi Satoh ,  Hiroshi Tsuji ,  Kunio Harada ,  Yasunari Sohda

发明人： Hidetoshi Satoh ,  Hiroshi Tsuji ,  Kunio Harada ,  Yasunari Sohda

IPC分类号： H01L2130

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/18 ,  H01J37/20 ,  H01J37/3174 ,  H01J2237/204

摘要： An electron beam lithography system to conduct drawing on a sample with an electron beam within a first chamber. A second chamber is provided which is separated from the first chamber and has a volume smaller than that of the first chamber. A member is provided which is capable of placing the sample on a part separable from an X-Y stage within the first chamber and moving the separable part with the sample thereon to a position for drawing on the sample with the electron beam within the first chamber. A loading arrangement is provided for removing the separable part and the sample from the X-Y stage and moving the separated part to the second chamber from the first chamber. The separable part of the X-Y stage is independently removable from the sample and from the second chamber to outside of the second chamber.

摘要翻译： 一种电子束光刻系统，用于在第一室内用电子束对样品进行拉伸。 设置有与第一室分离的第二室，其容积小于第一室的体积。 提供一种能够将样品放置在与第一室内的X-Y平台分离的部分上并将其上的样品移动到具有电子束在第一室内的样品的位置的位置的构件。 提供了一种装载装置，用于从X-Y平台移除可分离部分和样本，并将分离部分从第一室移动到第二室。 X-Y平台的可分离部分可独立从样品中移除，并从第二腔室分离到第二腔室外部。

公开(公告)号：US06555833B2

公开(公告)日：2003-04-29

申请号：US10194003

申请日：2002-07-15

申请人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

发明人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

IPC分类号： H01J37304

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which greatly increases a pattern projection speed, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

公开(公告)号：US5650631A

公开(公告)日：1997-07-22

申请号：US470592

申请日：1995-06-07

申请人： Yasunari Sohda ,  Masahide Okumura ,  Yasuhiro Someda ,  Hidetoshi Satoh ,  Yoshinori Nakayama ,  Norio Saitou

发明人： Yasunari Sohda ,  Masahide Okumura ,  Yasuhiro Someda ,  Hidetoshi Satoh ,  Yoshinori Nakayama ,  Norio Saitou

IPC分类号： G21K5/04 ,  G03F7/20 ,  H01J37/04 ,  H01J37/09 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027 ,  H01J37/30

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0435 ,  H01J2237/31774 ,  H01J2237/31776

摘要： A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes. The deflected beam portions are blocked by a downstream aperture that permits the non-deflected electron beam portions to pass through for forming the patterns to be written.

摘要翻译： 消隐阵列用于控制电子束写入系统中的电子束。 阵列中的电极平行地形成，并且彼此正交的两组平行电极被用于将电子束分成多个单独的曝光区域。 这些平行电极组可以通过丝网形成一个阵列，或者可以在不同的焦点位置处彼此间隔开或更远的两个分离的阵列中形成。 电极被设置成延伸穿过诸如正方形或三角形孔的孔。 对于三角形孔，电极与三角形的斜边平行。 通过组合曝光区域形成书写图案。 通过对相邻的电极施加相反极性的电压来实现对每个曝光区域的控制，以便偏转通过相邻电极的光束的部分。 偏转的光束部分被允许非偏转的电子束部分通过以形成待写入的图案的下游孔阻挡。

公开(公告)号：US5387799A

公开(公告)日：1995-02-07

申请号：US885608

申请日：1992-05-19

申请人： Yasunari Sohda ,  Hideo Todokoro ,  Hiroyuki Itoh ,  Shinichi Kato

发明人： Yasunari Sohda ,  Hideo Todokoro ,  Hiroyuki Itoh ,  Shinichi Kato

IPC分类号： H01J37/21 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  G21K1/093

CPC分类号： H01J37/3007 ,  H01J2237/04924 ,  H01J2237/30461 ,  H01J2237/3175

摘要： An electron beam writing system which permits a relatively low voltage to be applied to perform high speed focus correction with high accuracy. The electron beam writing system includes a focus corrector arranged inside a lens which provides the largest product of the magnification factors of the lens and all succeeding lenses and the optical path length of the lens at issue. Thus, the electron beam provides high sensitivity and a small change in the magnification ratio due to the correction.

摘要翻译： 一种允许施加相对较低电压以高精度执行高速聚焦校正的电子束写入系统。 电子束写入系统包括布置在透镜内部的聚焦校正器，其提供透镜的放大系数和所有后续透镜的最大乘积以及所涉及的透镜的光路长度。 因此，由于校正，电子束提供高灵敏度和放大率的小的变化。

公开(公告)号：US08263929B2

公开(公告)日：2012-09-11

申请号：US13057235

申请日：2009-07-31

申请人： Yoshinori Nakayama ,  Yasunari Sohda ,  Keiichiro Hitomi

发明人： Yoshinori Nakayama ,  Yasunari Sohda ,  Keiichiro Hitomi

IPC分类号： G01J1/10

CPC分类号： H01J37/28 ,  B82Y15/00 ,  H01J2237/2826

摘要： Disclosed is a standard specimen, used with an electron microscope to correct the magnification with high precision. A standard member used for correction corrects a scanning electron microscope that measures a pattern within an observation region based on information about the secondary electrons generated by scanning incident electron lines on the observation region on a measurement specimen, or information about the reflected electron intensity. The standard member has a first pattern region that corrects the magnification and that comprises a concavo-convex pattern (line/space pattern) in the cross section of a multilayer film that has been laminated, and a second pattern region near the first pattern at almost the same height that does not contain a pattern with the same periodicity as the pattern pitch size of the first region and that is used for beam adjustment.

摘要翻译： 公开了一种标准样品，与电子显微镜一起使用以高精度校正放大率。 用于校正的标准构件基于通过扫描测量样本上的观察区域上的入射电子线扫描产生的二次电子信息或关于反射电子强度的信息来校正观察区域内的图案的扫描电子显微镜。 标准构件具有第一图案区域，该第一图案区域校正放大率，并且在层压的多层膜的横截面中包括凹凸图案（线/空间图案），以及在第一图案附近的第二图案区域 相同的高度不包含与第一区域的图案间距尺寸相同的周期性的图案，并且用于光束调节。

公开(公告)号：US20110133065A1

公开(公告)日：2011-06-09

申请号：US13057235

申请日：2009-07-31

申请人： Yoshinori Nakayama ,  Yasunari Sohda ,  Keiichiro Hitomi

发明人： Yoshinori Nakayama ,  Yasunari Sohda ,  Keiichiro Hitomi

IPC分类号： G01D18/00 ,  G01N23/00 ,  G01N23/225

CPC分类号： H01J37/28 ,  B82Y15/00 ,  H01J2237/2826

摘要： Disclosed is a standard specimen, used with an electron microscope to correct the magnification with high precision. A standard member used for correction corrects a scanning electron microscope that measures a pattern within an observation region based on information about the secondary electrons generated by scanning incident electron lines on the observation region on a measurement specimen, or information about the reflected electron intensity. The standard member has a first pattern region that corrects the magnification and that comprises a concavo-convex pattern (line/space pattern) in the cross section of a multilayer film that has been laminated, and a second pattern region near the first pattern at almost the same height that does not contain a pattern with the same periodicity as the pattern pitch size of the first region and that is used for beam adjustment.

摘要翻译： 公开了一种标准样品，与电子显微镜一起使用以高精度校正放大率。 用于校正的标准构件基于通过扫描测量样本上的观察区域上的入射电子线扫描产生的二次电子信息或关于反射电子强度的信息来校正观察区域内的图案的扫描电子显微镜。 标准构件具有第一图案区域，该第一图案区域校正放大率，并且在层压的多层膜的横截面中包括凹凸图案（线/空间图案），以及在第一图案附近的第二图案区域 相同的高度不包含与第一区域的图案间距尺寸相同的周期性的图案，并且用于光束调节。

公开(公告)号：US07875850B2

公开(公告)日：2011-01-25

申请号：US12078516

申请日：2008-04-01

申请人： Yoshinori Nakayama ,  Yasunari Sohda ,  Keiichiro Hitomi

发明人： Yoshinori Nakayama ,  Yasunari Sohda ,  Keiichiro Hitomi

IPC分类号： H01J37/28 ,  G01N1/28 ,  G01D18/00

CPC分类号： G01N23/225 ,  H01J37/28 ,  H01J2237/20 ,  H01J2237/2826 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides a standard component for calibration that enables a calibration position to be easily specified in order to calibrate accurately a scale factor in the electron-beam system, and provides an electron-beam system using it. The standard component for calibration is one that calibrates a scale factor of an electron-beam system based on a signal of secondary charged particles detected by irradiation of a primary electron beam on a substrate having a cross section of a superlattice of a multi-layer structure in which different materials are deposited alternately. The substrate has linear patterns on the substrate surface parallel to the multi-layers and are arranged at a fixed interval in a direction crossing the cross section of the superlattice pattern, and the cross sections of the linear patterns are on substantially the same plane of the superlattice cross section, so that the linear patterns enable a position of the superlattice pattern to be identified.

摘要翻译： 本发明提供了一种用于校准的标准组件，其使得能够容易地指定校准位置，以便准确地校准电子束系统中的比例因子，并提供使用该电子束系统的电子束系统。 用于校准的标准组件是基于通过在具有多层结构的超晶格的横截面的基板上照射一次电子束而检测的二次带电粒子的信号来校准电子束系统的比例因子的标准组件 其中不同的材料交替沉积。 衬底在平行于多层的衬底表面上具有线性图案，并且在与超晶格图案的横截面交叉的方向上以固定的间隔布置，并且线状图案的横截面在 超晶格截面，使得线性图案能够识别超晶格图案的位置。

公开(公告)号：US20070172967A1

公开(公告)日：2007-07-26

申请号：US11626402

申请日：2007-01-24

申请人： Souichi Katagiri ,  Yasunari Sohda ,  Masahiko Ogino

发明人： Souichi Katagiri ,  Yasunari Sohda ,  Masahiko Ogino

IPC分类号： H01L21/66

CPC分类号： G03F9/7049 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/703 ,  G03F9/7084 ,  G03F9/7088

摘要： Method of forming a pattern by a nanoimprint technique starts with preparing a mold with nanostructures on its surface. The mold is pressed against a substrate or plate coated with a resin film. The positions of alignment marks formed on the rear surface of the plate coated with the resin film are detected. Thus, a relative alignment between the mold and the plate coated with the resin film is performed.

摘要翻译： 通过纳米压印技术形成图案的方法开始于在其表面上制备具有纳米结构的模具。 将模具压在涂有树脂膜的基板或板上。 检测在涂覆有树脂膜的板的后表面上形成的对准标记的位置。 因此，执行模具和涂覆有树脂膜的板之间的相对对准。