公开(公告)号：US5670728A

公开(公告)日：1997-09-23

申请号：US437619

申请日：1995-05-09

申请人： Yoichiro Ogai ,  Masahiro Shimizu

发明人： Yoichiro Ogai ,  Masahiro Shimizu

IPC分类号： G10H7/02 ,  G10H7/06 ,  G10H7/00

CPC分类号： G10H7/06

摘要： A pitch-asynchronous-type musical tone creating apparatus, provided for an electronic musical instrument, comprises at least a waveform memory, a low-pass filter and an interpolation section. Waveform samples, stored by the waveform memory, are sequentially read out, so that the interpolation section performs interpolation process on the waveform samples to create interpolation samples. Musical-tone parameters, such as a tone-color characteristic and an envelope characteristic, are imparted to the interpolation samples so as to create musical-tone samples. When performing reading operations on the waveform memory at a high speed which causes skipping of the reading operations, certain frequency components, which cause occurrence of folding noises, are incorporated into the interpolation samples. Those frequency components are removed from the waveform samples, read from the waveform memory, by the low-pass filter whose cut-off frequency is determined responsive to a frequency number. The frequency number is set responsive to a pitch designated for a musical tone to be produced. The low-pass filter is activated only when the frequency number is larger than a certain number so that skipping of the reading operations may occur. The musical-tone samples are accumulated with respect to a plurality of channels which operate in a time-division manner, so that musical tone signals, corresponding to musical tones to be produced, are created based on the musical-tone samples accumulated.

摘要翻译： 为电子乐器提供的音高异步音乐创作装置至少包括波形存储器，低通滤波器和插值部分。 由波形存储器存储的波形样本被顺序地读出，使得内插部分对波形样本进行插值处理以创建插值采样。 诸如音色特性和包络特性之类的音调参数被赋予内插样本，以便产生乐音样本。 当在波形存储器上以高速度进行读取操作时，导致读取操作跳动，导致出现折叠噪声的某些频率分量被并入插值样本中。 通过低通滤波器从波形存储器读取的波形样本中去除那些频率分量，该低通滤波器的截止频率是根据频率数量确定的。 响应于要产生的音调指定的音高而设定频率数。 低通滤波器仅在频率数大于特定数量时被激活，从而可能发生读取操作的跳过。 音乐样本相对于以时分方式操作的多个频道被累积，从而基于所累积的乐音样本来创建对应于要产生的乐音的乐音信号。

公开(公告)号：US5442127A

公开(公告)日：1995-08-15

申请号：US217608

申请日：1994-03-24

申请人： Masatada Wachi ,  Masahiro Shimizu

发明人： Masatada Wachi ,  Masahiro Shimizu

IPC分类号： G10H7/02 ,  G10H7/12

CPC分类号： G10H7/02 ,  G10H7/12 ,  G10H2250/571 ,  G10H2250/591 ,  G10H2250/621

摘要： A memory stores waveform sample data for plural sample points forming a given tone waveform, and one of the stored waveform sample data stored for every two adjacent sample points is expressed in PCM representation while the other is in difference value representation that is based on the PCM values stored for two sample points on both sides of the sample point of the other sample data. The number of bits in each address of the memory is greater than the number of bits in each of the PCM data, and each of the PCM data is stored at some bit positions of one address, while the difference value data is stored at the remaining bit positions of one or more addresses. The waveform sample data stored in the memory are read out at a readout rate corresponding to a designated pitch and in the order of the sample points, but when at least the waveform sample data expressed in the difference value is read out, the PCM data stored for two sample points adjacent thereto are also read out along with the difference value data. The read-out difference data is reproductively demodulated into PCM representation, using the PCM data read out along with the difference data.

摘要翻译： 存储器存储形成给定乐音波形的多个采样点的波形采样数据，并且对于每两个相邻采样点存储的存储的波形采样数据之一以PCM表示形式表示，而另一个是基于PCM的差值表示 存储在另一个样本数据的采样点两侧的两个采样点的值。 存储器的每个地址中的位数大于每个PCM数据中的位数，并且每个PCM数据被存储在一个地址的某个位位置，而差值数据被存储在剩余的 一个或多个地址的位位置。 存储在存储器中的波形采样数据以对应于指定音调的读出速率和采样点的顺序读出，但是当至少读出以差分值表示的波形采样数据时，PCM数据被存储 对于与其相邻的两个采样点也与差值数据一起读出。 读出的差分数据被再生解调成PCM表示，使用与差分数据一起读出的PCM数据。

公开(公告)号：US5413663A

公开(公告)日：1995-05-09

申请号：US74539

申请日：1993-06-11

申请人： Masahiro Shimizu ,  Takayuki Fukasawa ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Haruo Okano ,  Katsuya Okumura

发明人： Masahiro Shimizu ,  Takayuki Fukasawa ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Haruo Okano ,  Katsuya Okumura

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01L21/67069 ,  H01J37/3233

摘要： A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A semiconductor wafer is positioned flat and parallel to an electron introducing direction in the process chamber. Process gas is introduced into the process chamber and excited into plasma by the electron beam. The wafer is etched by this plasma. Magnetic field is formed at the entrance of the process chamber such that the electron beam is divided to both sides of its extended center line in a horizontal plane and compressed flat in a vertical plane. The magnetic field is also formed such that the electron beam is carried in the horizontal direction at a position where the wafer is arranged in the process chamber. A sheet-like plasma region having a higher density of ions and a more uniform distribution thereof can be thus formed all over the surface of the wafer.

摘要翻译： 晶片等离子体蚀刻装置包括电子发生，加速和处理室。 电子从在电子发生室中产生的等离子体中抽出，在加速室中被加速并且作为电子束引入到处理室中。 半导体晶片被定位成平行且平行于处理室中的电子引入方向。 工艺气体被引入处理室并通过电子束激发成等离子体。 通过该等离子体蚀刻晶片。 在处理室的入口处形成磁场，使得电子束在水平面被分割成其延伸的中心线的两侧，并在垂直平面中被压扁。 磁场也形成为使得电子束在晶片布置在处理室中的位置沿水平方向承载。 因此，可以在晶片的整个表面上形成具有较高的离子密度和更均匀分布的片状等离子体区域。

公开(公告)号：US5334683A

公开(公告)日：1994-08-02

申请号：US40010

申请日：1993-03-30

申请人： Takafumi Kawanaka ,  Takeshi Ohishi ,  Masahiro Shimizu

发明人： Takafumi Kawanaka ,  Takeshi Ohishi ,  Masahiro Shimizu

IPC分类号： C08F220/12 ,  C08F220/28 ,  C09K3/10 ,  C08F220/18 ,  C08F220/22 ,  C08F220/32 ,  C08F220/40

CPC分类号： C09K3/10 ,  C08F220/12 ,  C08F220/28 ,  C09K2200/0441 ,  C09K2200/0615 ,  C09K2200/0625 ,  C09K2200/0635

摘要： There are provided an acrylate polymer elastomer containing a particular acrylic ester unit as a constitutive component, and a vulcanizable composition comprising the elastomer and a vulcanizing agent.The acrylate polymer elastomer is obtained by copolymerizing(a) 45 to 89.9 wt. % of a monomer represented a by the formula ##STR1## wherein R.sup.1 represents an alkyl group having 1 to 8 carbon atoms, and/or a monomer represented by the formula ##STR2## wherein R.sup.2 represents an alkylene group having 1 to 8 carbon atoms and R.sup.3 represents an alkyl group having 1 to 8 carbon atoms,(b) 10 to 35 wt. % of a monomer represented by the formula t,0012 wherein R.sup.4 represents a hydrogen atom or a methyl group, R.sup.5 represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, and n represents an integer of 1 to 5,(c) 0.1 to 10 wt. % of crosslinkable monomer, and(d) 0 to 30 wt. % of a monoethylenic unsaturated monomer copolymerizable with the above(a) , (b) and (c) components.A vulcanizate obtained from the vulcanizable composition has improved low temperature resistance and oil resistance and is excellent in the balance of both natures.

摘要翻译： 提供了含有特定丙烯酸酯单元作为组成成分的丙烯酸酯聚合物弹性体和包含弹性体和硫化剂的可硫化组合物。 丙烯酸酯聚合物弹性体通过（a）45〜89.9重量％ ％的单体由式表示为a，其中R 1表示具有1至8个碳原子的烷基，和/或由下式表示的单体：其中R 2表示具有1至8个碳原子的亚烷基， R3表示碳原子数1〜8的烷基，（b）10〜35重量％ ％的由式t，0012表示的单体，其中R 4表示氢原子或甲基，R 5表示氢原子或具有1至4个碳原子的烃基，n表示1至5的整数，（c ）0.1〜10重量％ ％的可交联单体，和（d）0〜30wt。 ％的可与上述（a），（b）和（c）成分共聚的单烯属不饱和单体。 由可硫化组合物获得的硫化胶具有改善的耐低温性和耐油性，并且两者之间的平衡优异。

公开(公告)号：US5275960A

公开(公告)日：1994-01-04

申请号：US878387

申请日：1992-05-28

申请人： Takehisa Yamaguchi ,  Masahiro Shimizu

发明人： Takehisa Yamaguchi ,  Masahiro Shimizu

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/28 ,  H01L21/324 ,  H01L21/336 ,  H01L29/423 ,  H01L29/51 ,  H01L21/265

CPC分类号： H01L29/66606 ,  H01L21/28114 ,  H01L21/28167 ,  H01L29/42364 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/518

摘要： An MIS transistor includes insulating layers formed by the CVD method as gate insulating layers. The gate insulating layers by the CVD method are formed having a uniform film thickness on the channel region surface roughed by etching treatment or the like. The dielectric breakdown strength of the gate insulating layer is thus assured.

摘要翻译： MIS晶体管包括通过CVD法形成的绝缘层作为栅极绝缘层。 通过CVD法形成的栅极绝缘层在通过蚀刻处理等粗糙化的沟道区域表面上形成均匀的膜厚。 因此确保了栅极绝缘层的绝缘击穿强度。

公开(公告)号：US5217910A

公开(公告)日：1993-06-08

申请号：US779498

申请日：1991-10-24

申请人： Masahiro Shimizu ,  Katsuyoshi Mitsui ,  Yomiyuki Yama ,  Masatoshi Yasunaga

发明人： Masahiro Shimizu ,  Katsuyoshi Mitsui ,  Yomiyuki Yama ,  Masatoshi Yasunaga

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/78

CPC分类号： H01L29/6659 ,  H01L21/26586 ,  H01L21/823807 ,  H01L29/78

摘要： First, a low-concentration impurity layer is formed by obliquely implanting an n-type impurity at a prescribed angle with respect to the surface of a p-type semiconductor substrate, using a gate electrode formed on the semiconductor substrate as a mask. Thereafter a sidewall spacer is formed on the sidewall of the gate electrode, and then a medium-concentration impurity layer is formed by obliquely implanting an n-type impurity to the surface of the semiconductor substrate. Thereafter a high-concentration impurity layer is formed by substantially perpendicularly implanting an n-type impurity with respect to the surface of the semiconductor substrate. According to this method, the low-concentration impurity layer in source and drain regions having triple diffusion structures can be accurately overlapped with the gate electrode, with no requirement for heat treatment for thermal diffusion.

摘要翻译： 首先，使用形成在半导体衬底上的栅电极作为掩模，通过以相对于p型半导体衬底的表面以规定角度倾斜注入n型杂质来形成低浓度杂质层。 此后，在栅电极的侧壁上形成侧壁间隔物，然后通过向半导体衬底的表面倾斜注入n型杂质形成中等浓度杂质层。 此后，通过相对于半导体衬底的表面基本垂直地注入n型杂质来形成高浓度杂质层。 根据该方法，具有三重扩散结构的源极和漏极区域中的低浓度杂质层可以与栅电极精确重叠，而不需要热扩散热处理。

公开(公告)号：US4708904A

公开(公告)日：1987-11-24

申请号：US798639

申请日：1985-11-15

申请人： Masahiro Shimizu ,  Tatsuo Okamoto ,  Katsuhiro Tsukamoto

发明人： Masahiro Shimizu ,  Tatsuo Okamoto ,  Katsuhiro Tsukamoto

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L23/532 ,  H01L29/49 ,  B32B3/00 ,  B05D5/12 ,  B44C1/22 ,  C23C14/00

CPC分类号： H01L29/66575 ,  H01L21/32134 ,  H01L23/53257 ,  H01L29/4925 ,  H01L29/4933 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/24917

摘要： A semiconductor device and a method of manufacturing the same which comprises a semiconductor substrate and a conductive region formed thereon in multilayer structure of a film of refractory metal or refractory metal silicide inferior in corrosion resistance against a solution containing hydrofluoric acid and a film of refractory metal silicide excellent in corrosion resistance against the solution containing hydrofluorine acid and low electric resistance formed on the same.

摘要翻译： 一种半导体器件及其制造方法，包括半导体衬底和形成在其上的导电区域，所述导电区域形成在难熔金属或难熔金属硅化物的多层结构中，所述多层结构耐腐蚀性低于含有氢氟酸的溶液和难熔金属膜 对含有氢氟酸的溶液的耐腐蚀性优异的硅化物和在其上形成的低电阻。

公开(公告)号：US4208046A

公开(公告)日：1980-06-17

申请号：US942354

申请日：1978-09-14

申请人： Masahiro Shimizu

发明人： Masahiro Shimizu

IPC分类号： B65H3/06 ,  B65H3/46 ,  B65H3/52

CPC分类号： B65H3/5284 ,  B65H3/46 ,  B65H3/523

摘要： A sheet feeding assembly for separating and feeding sheet material one by one by means of a reversely rotatable separation roller or a stationary friction separation roller. There is further provided a sheet protective roller of which the dimension is substantially equal to that of the separation roller. The protective roller is rotatable freely from the separation roller so that the relative movement of the protective roller may remain unchanged with respect to the feed roller when in use.

摘要翻译： 用于通过反向旋转的分离辊或固定式摩擦分离辊逐张分离和输送片材的片材进给组件。 还提供了一个片材保护辊，其尺寸基本上等于分离辊的尺寸。 保护辊可以从分离辊自由旋转，使得当使用时保护辊的相对运动可相对于进给辊保持不变。

公开(公告)号：US08754316B2

公开(公告)日：2014-06-17

申请号：US13433044

申请日：2012-03-28

申请人： Masahiro Shimizu

发明人： Masahiro Shimizu

IPC分类号： G01P3/00 ,  G10H1/02 ,  G10H7/00

CPC分类号： G10H7/004 ,  G10H5/007 ,  G10H2210/271 ,  G10H2250/521

摘要： A string signal generator generates a string signal representing vibration of a string corresponding to a specified pitch in response to a note-on instruction such that the string signal rises and then attenuates in response to a note-off instruction. The string signal generator distributes the generated string signal to a plurality of loop circuits of a string resonance simulator. The plurality of the loop circuits correspond to a plurality of pitches and circulate resonant signals of the corresponding pitches, each loop circuit having a delay element for delaying the resonant signal by a time depending on the corresponding pitch, and an attenuation element for variably attenuating the resonant signal according to an attenuation coefficient. A controller respectively provides attenuation coefficients to the attenuation elements in the plurality of the loop circuits based on the note-on instruction, the note-off instruction, a damper-pedal-on instruction, and a damper-pedal-off instruction.

摘要翻译： 字符串信号发生器响应于音符开启指令产生表示对应于指定音调的弦的振动的弦信号，使得弦信号上升，然后响应于音符断开指令衰减。 串信号发生器将生成的串信号分配给串谐振模拟器的多个环路电路。 多个环路电路对应于多个间距并且循环相应间距的谐振信号，每个环路电路具有延迟元件，用于根据相应的间距延迟谐振信号一段时间;以及衰减元件，用于可变地衰减 谐振信号根据衰减系数。 控制器基于音符指示，音符关闭指令，风门踏板指令和阻尼器踏板关闭指令，分别向多个回路电路中的衰减元件提供衰减系数。

公开(公告)号：US08524510B2

公开(公告)日：2013-09-03

申请号：US13353004

申请日：2012-01-18

申请人： Kazuyuki Misumi ,  Masahiro Shimizu ,  Tsuyoshi Koga ,  Tatsuhiko Akiyama ,  Tomohiro Murakami

发明人： Kazuyuki Misumi ,  Masahiro Shimizu ,  Tsuyoshi Koga ,  Tatsuhiko Akiyama ,  Tomohiro Murakami

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L43/12 ,  H01L23/552 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L27/228 ,  H01L2224/05553 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 um or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.

摘要翻译： 一种制造磁存储器芯片器件的方法包括以下步骤：在形成在硅晶片上的多个磁存储器芯片中的每一个中写入信息; 在写入信息之后，在硅晶片的背面上粘附高磁导率板，高磁导率板具有比硅更高的磁导率并且具有50μm以上的厚度; 在粘附高磁导率板之后，将硅晶片切割成各自的磁存储芯片。