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    Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
    54.
    发明授权
    Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer 有权
    降低可聚合层与使用含氟层的基板之间的粘附性的方法

    公开(公告)号：US07452574B2

    公开(公告)日：2008-11-18

    申请号：US10375817

    申请日：2003-02-27

    申请人： Van N. Truskett ,  Christopher J. Mackay ,  B. Jin Choi

    发明人： Van N. Truskett ,  Christopher J. Mackay ,  B. Jin Choi

    IPC分类号： B05D3/02

    CPC分类号： B82Y10/00 ,  B05D5/083 ,  B81C99/008 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0755 ,  G03F7/11 ,  G03F7/165

    摘要： The present invention provides a method to reduce adhesion between a polymerizable layer and a substrate surface that selectively comes into contact with the polymerizable layer. The method features disposing a coating upon the surface from a composition having a perfluoro silane containing molecule. The perfluoro silane molecule is connected to bonding regions on the surface forming covalent bonding groups, as well as contact regions. The contact regions include fluorinated chains of molecules. The covalent bonding groups are positioned between the surface and the contact regions. The perfluoro silane containing molecule may be applied to the surface as a monomolecular layer from a di-functional perfluoro silane molecule. Exemplary molecules that may be employed as the perfluoro silane containing molecule includes molecules sold under the trade-names FLUOROSYL™ FSD 2500 and FLUOROSYL™ FSD 4500.

    摘要翻译： 本发明提供一种降低可聚合层与选择性地与可聚合层接触的基材表面之间粘合的方法。 该方法的特征是从具有全氟硅烷分子的组合物在表面上设置涂层。 全氟硅烷分子与形成共价键合基团的表面上的结合区以及接触区连接。 接触区域包括分子的氟化链。 共价键合基团位于表面和接触区域之间。 含全氟硅烷的分子可以作为单官能全氟硅烷分子的单分子层施加到表面。 可用作全氟硅烷分子的示例性分子包括以商品名FLUOROSYL TM FSD 2500和FLUOROSYL TM FSD 4500出售的分子。

    Composition for an etching mask comprising a silicon-containing material
    55.
    发明申请
    Composition for an etching mask comprising a silicon-containing material 有权
    包含含硅材料的蚀刻掩模的组合物

    公开(公告)号：US20080097065A1

    公开(公告)日：2008-04-24

    申请号：US11508765

    申请日：2006-08-23

    申请人： Frank Y. Xu ,  Michael N. Miller ,  Michael P.C. Watts

    发明人： Frank Y. Xu ,  Michael N. Miller ,  Michael P.C. Watts

    IPC分类号： C08G77/04

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.

    摘要翻译： 本发明包括用作下层的蚀刻掩模的含硅材料用组合物。 更具体地，含硅材料可以用作包括突起和凹陷的图案化印记层的蚀刻掩模。 为此，在本发明的一个实施方案中，组合物包括羟基官能的硅氧烷组分，交联组分，催化剂组分和溶剂。 该组合物允许含硅材料与图案化压印层的突起和段的叠加选择性地蚀刻，同时最小化与凹陷叠加的段的蚀刻，并且因此允许形成原位硬化的掩模 通过含硅材料，硬化的掩模和图案化的压印层形成基本平坦化的轮廓。

    METHOD FOR OBTAINING FORCE COMBINATIONS FOR TEMPLATE DEFORMATION USING NULLSPACE AND METHODS OPTIMIZATION TECHNIQUES
    56.
    发明申请
    METHOD FOR OBTAINING FORCE COMBINATIONS FOR TEMPLATE DEFORMATION USING NULLSPACE AND METHODS OPTIMIZATION TECHNIQUES 有权
    使用空位获取模板变形的力组合的方法和方法优化技术

    公开(公告)号：US20070287081A1

    公开(公告)日：2007-12-13

    申请号：US11695469

    申请日：2007-04-02

    申请人： Anshuman Cherala ,  Sidlgata Sreenivasan ,  Byung-Jin Choi ,  Ecron Thompson

    发明人： Anshuman Cherala ,  Sidlgata Sreenivasan ,  Byung-Jin Choi ,  Ecron Thompson

    IPC分类号： G03F9/00

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/703 ,  G03F7/70633 ,  G03F7/70783 ,  G03F9/7003 ,  G03F9/7092

    摘要： The present invention is directed towards a method for determining deformation parameters that a patterned device would undergo to minimize dimensional variations between a recorded pattern thereon and a reference pattern, the method including, inter alia, comparing spatial variation between features of the recorded pattern with respect to corresponding features of the reference pattern; and determining deformation forces to apply to the patterned device to attenuate the dimensional variations, with the forces having predetermined constraints, wherein a summation of a magnitude of the forces is substantially zero and a summation of moment of the forces is substantially zero.

    摘要翻译： 本发明涉及一种用于确定图案化装置将经历以使其上的记录图案与参考图案之间的尺寸变化最小化的变形参数的方法，该方法尤其包括将记录图案的特征与相对于 参考图案的相应特征; 以及确定施加到所述图案化装置上的变形力以衰减所述尺寸变化，其中所述力具有预定的约束，其中所述力的大小的总和基本上为零，并且所述力的力矩的总和基本上为零。

    Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features
    59.
    发明申请
    Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features 有权
    用于制造包含各种蚀刻特征的印记模板的自对准过程

    公开(公告)号：US20070243655A1

    公开(公告)日：2007-10-18

    申请号：US11693236

    申请日：2007-03-29

    申请人： Gerard M. Schmid ,  Nicholas A. Stacey ,  Douglas J. Resnick ,  Ronald D. Voisin ,  Lawrence J. Myron

    发明人： Gerard M. Schmid ,  Nicholas A. Stacey ,  Douglas J. Resnick ,  Ronald D. Voisin ,  Lawrence J. Myron

    IPC分类号： H01L21/467

    CPC分类号： G03F7/0005 ,  B82Y10/00 ,  B82Y40/00 ,  G02B3/0012 ,  G03F7/0002

    摘要： A process that enables coplanarization of the structures that have been created in multiple independent etch steps. The various etches are performed independently by selectively exposing only certain patterns to particular etching conditions. After these structures have been created, it is possible that the various structures will exist at different planes/elevations relative to the template surface. The elevations of the various structures may be adjusted independently by selectively exposing “higher” structures to an anisotropic etch that reduces the overall elevation of the structures, while preserving the structural topography.

    摘要翻译： 能够在多个独立蚀刻步骤中产生的结构共面化的工艺。 通过仅选择性地将某些图案暴露于特定的蚀刻条件来独立地执行各种蚀刻。 在这些结构已被创建之后，可能各种结构将相对于模板表面存在于不同的平面/高度处。 可以通过选择性地将“较高”结构暴露于各向异性蚀刻来独立地调节各种结构的高度，从而降低结构的整体高度，同时保留结构形貌。

    Scatterometry alignment for imprint lithography
    60.
    发明授权
    Scatterometry alignment for imprint lithography 有权
    刻印光刻的散射对准

    公开(公告)号：US07281921B2

    公开(公告)日：2007-10-16

    申请号：US11347198

    申请日：2006-02-03

    申请人： Michael P. C. Watts ,  Ian M. McMackin

    发明人： Michael P. C. Watts ,  Ian M. McMackin

    IPC分类号： B29C43/58 ,  B29C59/00 ,  G01B11/00

    CPC分类号： B29C35/0888 ,  B29C59/022 ,  B29C59/026 ,  B29C2035/0827 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/00

    摘要： Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.

    摘要翻译： 描述了通过压印光刻图案化衬底的方法。 压印光刻是将液体分配到基板上的过程。 使模板与液体接触并且液体被固化。 固化液体包括在模板中形成的任何图案的印记。 在一个实施例中，模板与衬底上预先形成的层的对准通过使用散射测量来实现。