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    Process for manufacture of micro electromechanical devices having high electrical isolation
    51.
    发明授权
    Process for manufacture of micro electromechanical devices having high electrical isolation 有权
    具有高电绝缘性的微机电装置的制造方法

    公开(公告)号：US06617657B1

    公开(公告)日：2003-09-09

    申请号：US09710326

    申请日：2000-11-09

    Applicant: Jun J. Yao ,  Robert J. Anderson

    Inventor： Jun J. Yao ,  Robert J. Anderson

    IPC: H01L2982

    CPC classification number: B81C1/00484 ,  B81B2203/0118 ,  B81C2201/0108 ,  B81C2201/014 ,  B81C2201/019

    Abstract: The present invention relates to a fabrication process relating to a fabrication process for manufacture of micro-electromechanical (MEM) devices such as cantilever supported beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate as the carrier substrate and single crystal silicon as the MEM component material. The process further includes deposition of an optional layer of insulating material such as silicon dioxide on top of a layer of doped silicon grown on a silicon substrate. The silicon dioxide is epoxy bonded to the glass substrate to create a silicon-silicon dioxide-epoxy-glass structure. The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer and an oxygen plasma etch is performed to undercut the epoxy film and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material in selected areas mechanically supports the MEM component.

    Abstract translation: 本发明涉及涉及用于制造诸如悬臂支撑梁的微机电（MEM）装置的制造工艺的制造工艺。 该制造工艺仅需要两个光刻掩模步骤，并提供具有高电绝缘性的可移动机电装置。 该方法的优选实施方案使用电绝缘玻璃基材作为载体基材，将单晶硅用作MEM组分材料。 该方法还包括在硅衬底上生长的掺杂硅层上沉积绝缘材料如二氧化硅的任选层。 二氧化硅是环氧键合到玻璃基底上以产生硅 - 二氧化硅 - 环氧玻璃结构。 使用各向异性等离子体干蚀刻技术将硅图案化。 然后进行第二图案化以对二氧化硅层进行图案化，并且执行氧等离子体蚀刻以切割环氧树脂膜并释放硅MEM组分。 该双掩模工艺提供具有电隔离的MEM组分的单晶硅MEM。 在选定区域保持二氧化硅绝缘材料机械地支撑MEM部件。

    Microelectronic mechanical system and methods
    52.
    发明申请
    Microelectronic mechanical system and methods 有权
    微电子机械系统及方法

    公开(公告)号：US20030138986A1

    公开(公告)日：2003-07-24

    申请号：US10268257

    申请日：2002-10-09

    Inventor： Mike Bruner

    IPC: H01L021/00

    CPC classification number: B81C1/00484 ,  B81B2201/0271 ,  B81B2203/0136 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0136 ,  B81C2203/0735

    Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein NgnullXe, Kr or Ar: and where xnull1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

    Abstract translation: 本发明提供了包封的释放结构，其中间体及其制备方法。 多层结构具有覆盖层，其优选地包括氧化硅和/或氮化硅，并且其形成在耐蚀刻衬底上。 优选地包括氮化硅的图案化器件层嵌入牺牲材料中，优选地包括多晶硅，并且设置在耐蚀刻衬底和覆盖层之间。 进入沟槽或孔形成在覆盖层中，并且牺牲材料通过进入沟槽被选择性地蚀刻，使得器件层的部分从牺牲材料释放。 蚀刻剂优选包含惰性气体氟化物NGF2x（其中Ng = Xe，Kr或Ar：其中x = 1,2或3）。 在蚀刻该牺牲材料之后，进入沟槽被密封以将器件层的释放部分封装在耐蚀刻衬底和覆盖层之间。 本发明对于制造具有多个释放特征的MEMS器件，多腔器件和器件特别有用。

    SILICON PRESSURE MICRO-SENSING DEVICE AND THE FABRICATION PROCESS
    53.
    发明申请
    SILICON PRESSURE MICRO-SENSING DEVICE AND THE FABRICATION PROCESS 失效
    硅压敏感测装置及制造工艺

    公开(公告)号：US20030068838A1

    公开(公告)日：2003-04-10

    申请号：US09975125

    申请日：2001-10-09

    Inventor： Jin-shown Shie ,  Ji-cheng Lin ,  Chune-te Lin ,  Chih-tang Peng ,  Shih-han Yu ,  Kuo-ning Chiang

    IPC: H01L021/00 ,  H01L029/82

    CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/014 ,  B81C2201/016 ,  G01L9/0054

    Abstract: The invention is a silicon pressure micro-sensing device and the fabrication process thereof. The silicon pressure micro-sensing device includes a pressure chamber, and is constituted of a P-type substrate with a taper chamber and an N-type epitaxial layer thereon. On the N-type epitaxial layer are a plurality of piezo-resistance sensing units which sense deformation caused by pressure. The fabrication pressure of the silicon pressure micro-sensing device includes a step of first making a plurality of holes on the N-type epitaxial layer to reach the P-type substrate beneath. Then, by an anisotropic etching stop technique, in which etchant pass through the holes, a taper chamber is formed in the P-type substrate. Finally, an insulating material is applied to seal the holes, thus attaining the silicon pressure micro-sensing device that is able to sense pressure differences between two ends thereof.

    Abstract translation: 本发明是一种硅压力微型感测装置及其制造方法。 硅压力微型感测装置包括压力室，由具有锥形室的P型衬底和其上的N型外延层构成。 在N型外延层上是感测由压力引起的变形的多个压电感测单元。 硅压力微型感测装置的制造压力包括首先在N型外延层上制造多个孔以到达下面的P型衬底的步骤。 然后，通过各向异性蚀刻停止技术，其中蚀刻剂穿过孔，在P型衬底中形成锥形室。 最后，施加绝缘材料以密封孔，从而获得能够感测其两端之间的压力差的硅压力微检测装置。

    Method for improved die release of a semiconductor device from a wafer
    54.
    发明授权
    Method for improved die release of a semiconductor device from a wafer 失效
    用于从晶片改进半导体器件脱模的方法

    公开(公告)号：US06544898B2

    公开(公告)日：2003-04-08

    申请号：US09891105

    申请日：2001-06-25

    Applicant: Bruce Polson ,  Nan Zhang ,  Howard P. Wilson

    Inventor： Bruce Polson ,  Nan Zhang ,  Howard P. Wilson

    IPC: H01L2100

    CPC classification number: B81C1/00873 ,  B81C2201/014

    Abstract: A microelectromechanical (MEMS) device and a method of fabricating a MEMS device are provided. The method of fabricating the MEMS device includes the steps of: etching a die release trench in a primary handle layer of a wafer having the handle layer, an etch-stop layer disposed on the primary handle layer, and a device layer disposed on the etch-stop layer; patterning a release trench in the device layer that is aligned with the release trench in the primary handle layer; temporarily attaching an additional handle layer to the primary handle layer; etching the device layer to define a structure in the device layer; removing the etch-stop layer; and removing the additional handle layer to release the die.

    Abstract translation: 提供了一种微机电（MEMS）器件和MEMS器件的制造方法。 制造MEMS器件的方法包括以下步骤：蚀刻具有手柄层的晶片的主手柄层中的裸片释放沟槽，设置在主手柄层上的蚀刻停止层以及设置在蚀刻上的器件层 停留层 图案化在与主手柄层中的释放沟槽对准的器件层中的释放沟槽; 临时附加手柄层到主手柄层; 蚀刻器件层以限定器件层中的结构; 去除蚀刻停止层; 并移除附加手柄层以释放模具。

    Thin film resonators fabricated on membranes created by front side releasing
    57.
    发明授权
    Thin film resonators fabricated on membranes created by front side releasing 有权
    薄膜谐振器制造在由前端释放产生的膜上

    公开(公告)号：US06355498B1

    公开(公告)日：2002-03-12

    申请号：US09637069

    申请日：2000-08-11

    Applicant: Edward Chan ,  Harold Alexis Huggins ,  Jungsang Kim ,  Hyongsok Soh

    Inventor： Edward Chan ,  Harold Alexis Huggins ,  Jungsang Kim ,  Hyongsok Soh

    IPC: H01L2100

    CPC classification number: H03H9/173 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/014 ,  H03H3/02 ,  H03H2003/021

    Abstract: A new bulk resonator may be fabricated by a process that is readily incorporated in the traditional fabrication techniques used in the fabrication of monolithic integrated circuits on a wafer. The resonator is decoupled from the wafer by a cavity etched under the resonator using selective etching through front openings (vias) in a resonator membrane. In a typical structure the resonator is formed over a silicon wafer by first forming a first electrode, coating a piezoelectric layer over both the electrode and the wafer surface and forming a second electrode opposite the first on the surface of the piezoelectric layer. After this structure is complete, a number of vias are etched in the piezoelectric layer exposing the surface under the piezoelectric layer to a selective etching process that selectively attacks the surface below the piezoelectric layer creating a cavity under the resonator.

    Abstract translation: 新的体谐振器可以通过容易地结合在晶片上制造单片集成电路中的传统制造技术中的工艺来制造。 谐振器通过使用谐振膜内的前开口（通孔）进行选择性蚀刻而在谐振器下方蚀刻的腔体与晶片分离。 在典型的结构中，谐振器通过首先形成第一电极而在硅晶片上形成，在电极和晶片表面上涂覆压电层，并形成与压电层表面上的第一电极相对的第二电极。 在该结构完成之后，在将压电层下方的表面暴露的压电层中蚀刻多个通孔至选择性蚀刻工艺，该选择性蚀刻工艺选择性地攻击压电层下方的表面，从而在谐振器下形成空腔。

    Method for forming suspended micromechanical structures
    60.
    发明授权
    Method for forming suspended micromechanical structures 有权
    形成悬浮微机械结构的方法

    公开(公告)号：US6020272A

    公开(公告)日：2000-02-01

    申请号：US169307

    申请日：1998-10-08

    Applicant: James G. Fleming

    Inventor： James G. Fleming

    IPC: B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  H01L21/00

    CPC classification number: B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  B81C2201/053

    Abstract: A micromachining method is disclosed for forming a suspended micromechanical structure from {111} crystalline silicon. The micromachining method is based on the use of anisotropic dry etching to define lateral features of the structure which are etched down into a {111}-silicon substrate to a first etch depth, thereby forming sidewalls of the structure. The sidewalls are then coated with a protection layer, and the substrate is dry etched to a second etch depth to define a spacing of the structure from the substrate. A selective anisotropic wet etchant (e.g. KOH, EDP, TMAH, NaOH or CsOH) is used to laterally undercut the structure between the first and second etch depths, thereby forming a substantially planar lower surface of the structure along a {111} crystal plane that is parallel to an upper surface of the structure. The lateral extent of undercutting by the wet etchant is controlled and effectively terminated by either timing the etching, by the location of angled {111}-silicon planes or by the locations of preformed etch-stops. This present method allows the formation of suspended micromechanical structures having large vertical dimensions and large masses while allowing for detailed lateral features which can be provided by dry etch definition. Additionally, the method of the present invention is compatible with the formation of electronic circuitry on the substrate.

    Abstract translation: 公开了一种从{111}结晶硅形成悬浮微机械结构的微加工方法。 微加工方法基于使用各向异性干蚀刻来限定结构的侧向特征，其被蚀刻成{111} - 硅基底到第一蚀刻深度，从而形成该结构的侧壁。 然后用保护层涂覆侧壁，并且将基底干蚀刻至第二蚀刻深度以限定结构与基底的间隔。 使用选择性各向异性湿蚀刻剂（例如KOH，EDP，TMAH，NaOH或CsOH）横向地削去第一和第二蚀刻深度之间的结构，由此沿{111}晶面形成基本上平面的该结构的下表面， 平行于结构的上表面。 通过湿蚀刻剂的底切的横向范围通过定时蚀刻，倾斜的{111} - 硅面的位置或预先形成的蚀刻停止点的位置来控制和有效地终止。 该本方法允许形成具有大垂直尺寸和大质量的悬浮微机械结构，同时允许可通过干蚀刻定义提供的详细横向特征。 另外，本发明的方法与基板上的电子电路的形成兼容。

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