公开(公告)号：US20130298364A1

公开(公告)日：2013-11-14

申请号：US13711226

申请日：2012-12-11

Applicant: UT-Battelle, LLC

Inventor： Enis Tuncer

IPC: H01G4/06

CPC classification number: H01G4/06 ,  H01G4/105 ,  H01G4/28 ,  H01G4/38 ,  Y10T29/417 ,  Y10T29/435

Abstract: A clad capacitor and method of manufacture includes assembling a preform comprising a ductile, electrically conductive fiber; a ductile, electrically insulating cladding positioned on the fiber; and a ductile, electrically conductive sleeve positioned over the cladding. One or more preforms are then bundled, heated and drawn along a longitudinal axis to decrease the diameter of the ductile components of the preform and fuse the preform into a unitized strand.

Abstract translation: 包覆电容器和制造方法包括组装包括延性导电纤维的预制件; 位于纤维上的延展的电绝缘包层; 以及位于包层上方的延性导电套筒。 然后将一个或多个预成型件沿着纵向轴线捆扎，加热和拉伸，以减小预成型件的延性部件的直径并将预成型件熔合成单元化的线。

公开(公告)号：US08542475B2

公开(公告)日：2013-09-24

申请号：US12900976

申请日：2010-10-08

Applicant: Michael Lanagan ,  Carlo Pantano ,  Hoi Kwan Lee ,  Ramakrishnan Rajagopalan ,  Nicholas Smith

Inventor： Michael Lanagan ,  Carlo Pantano ,  Hoi Kwan Lee ,  Ramakrishnan Rajagopalan ,  Nicholas Smith

IPC: H01G4/015 ,  H01G4/20

CPC classification number: H01G4/105

Abstract: A self healing high energy glass capacitor is provided. The capacitor can have a glass layer with a top surface and a bottom surface. A top sacrificial layer can extend across the top surface and a bottom sacrificial layer can extend across the bottom surface. In addition, a top electrode can extend across the top sacrificial layer and a bottom electrode can extend across the bottom sacrificial layer. In some instances the glass capacitor has an energy breakdown of at least 6 joules per cubic centimeter.

Abstract translation: 提供自愈高能玻璃电容器。 电容器可以具有顶表面和底表面的玻璃层。 顶部牺牲层可以跨越顶部表面延伸，并且底部牺牲层可延伸穿过底部表面。 此外，顶部电极可以跨越顶部牺牲层延伸，并且底部电极可延伸穿过底部牺牲层。 在一些情况下，玻璃电容器具有至少6焦耳/立方厘米的能量击穿。

公开(公告)号：US08331076B2

公开(公告)日：2012-12-11

申请号：US12838070

申请日：2010-07-16

Applicant: Enis Tuncer

Inventor： Enis Tuncer

IPC: H01G4/30

CPC classification number: H01G4/06 ,  H01G4/105 ,  H01G4/28 ,  H01G4/38 ,  Y10T29/417 ,  Y10T29/435

Abstract: A clad capacitor and method of manufacture includes assembling a preform comprising a ductile, electrically conductive fiber; a ductile, electrically insulating cladding positioned on the fiber; and a ductile, electrically conductive sleeve positioned over the cladding. One or more preforms are then bundled, heated and drawn along a longitudinal axis to decrease the diameter of the ductile components of the preform and fuse the preform into a unitized strand.

Abstract translation: 包覆电容器和制造方法包括组装包括延性导电纤维的预制件; 位于纤维上的延展的电绝缘包层; 以及位于包层上方的延性导电套筒。 然后将一个或多个预成型件沿着纵向轴线捆扎，加热和拉伸，以减小预成型件的延性部件的直径并将预成型件熔合成单元化的线。

公开(公告)号：US08102223B2

公开(公告)日：2012-01-24

申请号：US12453422

申请日：2009-05-11

Applicant: Shusaku Umemoto ,  Takashi Suzuki ,  Kouichi Kakuda ,  Hiroshi Momoi ,  Masaki Takahashi ,  Shinichi Kondo

Inventor： Shusaku Umemoto ,  Takashi Suzuki ,  Kouichi Kakuda ,  Hiroshi Momoi ,  Masaki Takahashi ,  Shinichi Kondo

IPC: H03H7/00 ,  C03C14/00 ,  C04B35/00 ,  H01F5/00 ,  H01G4/06

CPC classification number: C04B35/18 ,  C04B35/20 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/365 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/77 ,  C04B2235/785 ,  H01F5/003 ,  H01F17/0013 ,  H01F2017/0066 ,  H01F2017/0093 ,  H01G4/10 ,  H01G4/105 ,  H01G4/12 ,  H01G4/1209 ,  H03H7/0115 ,  H03H7/427 ,  H03H2001/0085 ,  H05K1/0306

Abstract: A dielectric ceramic composition comprises as a main component, Cu oxide, Si oxide and one selected from the group consisting of Zn oxide alone and a combination of Mg oxide and Zn oxide, as a subcomponent, a glass component including B oxide and at least one selected from the group consisting of Si oxide, Ba oxide, Ca oxide, Sr oxide, Li oxide and Zn oxide, and having a glass softening point is 750° C. or less, wherein a content of said glass component is 1.5 to 15 wt % with respect to 100 wt % of said main component. According to the present invention, a dielectric ceramic composition can be provided which is available to be sintered at low temperature (for example, 950° C. or lower) while comparatively decreasing contents of a glass component, which shows good properties (specific permittivity, loss Q value and insulation resistance), and which is available to perform cofiring different materials.

Abstract translation: 电介质陶瓷组合物作为主要成分包含Cu氧化物，Si氧化物和选自单独的Zn氧化物和Mg氧化物和Zn氧化物的组合的一种作为副成分，包括B氧化物的玻璃成分和至少一种 选自由Si氧化物，Ba氧化物，CaO 2，Sr氧化物，Li氧化物和Zn氧化物组成的组，玻璃软化点为750℃以下，其中，所述玻璃成分的含量为1.5〜15重量％ 相对于100重量％的所述主要成分。 根据本发明，可以提供一种电介质陶瓷组合物，其可以在低温（例如950℃或更低）下烧结，同时相对降低玻璃组分的含量，其显示出良好的性能（比介电常数， 损耗Q值和绝缘电阻），并且可用于执行不同材料的共烧。

公开(公告)号：US20110317329A1

公开(公告)日：2011-12-29

申请号：US13205832

申请日：2011-08-09

Applicant: Martin Letz ,  Hans-Heinrich Gundelach ,  Holger Wegener

Inventor： Martin Letz ,  Hans-Heinrich Gundelach ,  Holger Wegener

IPC: H01G4/06 ,  B32B38/18

CPC classification number: H01G4/08 ,  B32B37/14 ,  C03B17/06 ,  C03B23/0006 ,  C03B33/0215 ,  C03B33/091 ,  C03B33/093 ,  C03C3/091 ,  C03C4/16 ,  H01G4/105 ,  H01G13/00 ,  H01G13/02 ,  Y10T156/1031

Abstract: A capacitor having a dielectric consisting of a glass layer with an alkali metal oxide content of at most 2 wt % and a thickness of at most 50 μm is provided. The capacitor includes at least two metal layers which are separated by the glass layer. The glass layer is preferably produced by a down-draw method or by an overflow down-draw fusion method.

Abstract translation: 提供具有由碱金属氧化物含量为2重量％以下且厚度为50μm以下的玻璃层构成的电介质的电容器。 电容器包括由玻璃层分离的至少两个金属层。 玻璃层优选通过下拉法或通过溢流下拉熔化法制造。

公开(公告)号：US20110252629A1

公开(公告)日：2011-10-20

申请号：US13167751

申请日：2011-06-24

Applicant: Tatsuo KUNISHI ,  Junichi SAITO ,  Yoshinori UEDA ,  Akihiro MOTOKI

Inventor： Tatsuo KUNISHI ,  Junichi SAITO ,  Yoshinori UEDA ,  Akihiro MOTOKI

IPC: H05K13/00

CPC classification number: H01G4/105 ,  H01G4/1209 ,  H01G4/30 ,  H01L41/273 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49002

Abstract: Provided is a method for producing a ceramic body, which is capable of preventing the ingress of moisture into a void between a conductor and the ceramic body more effectively in the ceramic body including the conductor therein. Ingress of a supercritical fluid containing an oxide sol precursor is achieved into a void between an internal electrode layer and a ceramic laminate. After that, the oxide sol is turned into a gel, and subjected to a heat treatment, thereby filling the void between the internal electrode layer and the ceramic laminate with an oxide.

Abstract translation: 提供一种陶瓷体的制造方法，其能够防止在包含导体的陶瓷体中更有效地将水分进入导体和陶瓷体之间的空隙。 含有氧化物溶胶前体的超临界流体的入口被实现为内部电极层和陶瓷层压体之间的空隙。 之后，将氧化物溶胶变成凝胶，进行热处理，从而用氧化物填充内部电极层和陶瓷层叠体之间的空隙。

公开(公告)号：US07943858B2

公开(公告)日：2011-05-17

申请号：US12076989

申请日：2008-03-26

Applicant: Seung Eun Lee ,  Yul Kyo Chung ,  Jung Won Lee ,  In Hyung Lee ,  Byung Ik Song

Inventor： Seung Eun Lee ,  Yul Kyo Chung ,  Jung Won Lee ,  In Hyung Lee ,  Byung Ik Song

IPC: H05K1/16

CPC classification number: H05K1/162 ,  H01G4/105 ,  H01G4/33 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/435

Abstract: There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

Abstract translation: 提供了薄膜电容器和电容器嵌入式印刷电路板，改善了漏电流特性。 电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成，而不在高温下进行热处理，并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。 此外，可以形成具有不同金属相铋含量的另一介质层。 所述薄膜电容器包括：第一电极; 介电层，包括形成在所述第一电极上的第一电介质膜，所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极，其中所述BiZnNb基非晶态金属氧化物含有金属相铋。

公开(公告)号：US07830644B2

公开(公告)日：2010-11-09

申请号：US11713783

申请日：2007-03-05

Applicant: Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

Inventor： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

IPC: H01G4/06 ,  H01G4/005

CPC classification number: C01G23/002 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3281 ,  H01G4/105 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/306

Abstract: Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

Abstract translation: 公开了生产多晶和单晶电介质的方法，包括包含CaCu 3 Ti 4 O 12或La 3 Ga 5 SiO 4的电介质。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善的结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器

公开(公告)号：US20100172065A1

公开(公告)日：2010-07-08

申请号：US12399020

申请日：2009-03-06

Applicant: Tsai-Yu Huang ,  Shin-Yu Nieh ,  Hui-Lan Chang

Inventor： Tsai-Yu Huang ,  Shin-Yu Nieh ,  Hui-Lan Chang

IPC: H01G4/20

CPC classification number: H01G4/10 ,  H01G4/105 ,  H01G4/33 ,  H01L28/40

Abstract: A capacitor structure includes: a top electrode, a bottom electrode, a first capacitor dielectric layer positioned between the top electrode and the bottom electrode and a second capacitor dielectric layer positioned between the top electrode and the bottom electrode. The first capacitor dielectric layer is selected from the group consisting HfO2, ZrO2, and TiO2. The second capacitor dielectric layer is selected from the group consisting of lanthanide oxide series and rare earth oxide series.

Abstract translation: 电容器结构包括：顶电极，底电极，位于顶电极和底电极之间的第一电容器电介质层和位于顶电极和底电极之间的第二电容介电层。 第一电容器介电层选自HfO 2，ZrO 2和TiO 2。 第二电容器电介质层选自镧系元素氧化物系列和稀土氧化物系列。

公开(公告)号：US20100165540A1

公开(公告)日：2010-07-01

申请号：US12646642

申请日：2009-12-23

Applicant: Chul-Jin Yoon

Inventor： Chul-Jin Yoon

IPC: H01G4/002

CPC classification number: H01G4/33 ,  H01G4/105 ,  H01L28/60 ,  Y10T29/435

Abstract: A capacitor and method of fabricating a capacitor. A method of fabricating a capacitor may include forming a device isolation film on and/or over a semiconductor substrate, forming a polysilicon pattern on and/or over a device isolation film, forming a silicide on and/or over an upper portion of a polysilicon pattern, forming a capacitor insulating film covering a silicide, forming a pre-metal-dielectric (PMD) on and/or over a semiconductor substrate having a capacitor insulating film, and/or forming an upper metal electrode on and/or over a hole on and/or over a PMD, which may expose an insulating film opposite a region of a silicide.

Abstract translation: 一种制造电容器的电容器和方法。 制造电容器的方法可以包括在半导体衬底上和/或之上形成器件隔离膜，在器件隔离膜上和/或器件隔离膜上形成多晶硅图案，在多晶硅上部和/或上方形成硅化物 形成覆盖硅化物的电容器绝缘膜，在具有电容器绝缘膜的半导体衬底上和/或上方形成预金属电介质（PMD），和/或在孔上和/或上方形成上金属电极 在PMD上和/或之上，其可以暴露与硅化物的区域相对的绝缘膜。