摘要:
An integrated wavelength monitor and a method for obtaining such a device are disclosed. The device suitable for integration into a laser semiconductor laser module for fiber optic communication can be made in the following way: An interference filter is created directly onto a position sensitive photo detector by depositing a number of layers of different optical transparent materials forming an optical filter. The interference filter may also be created separately and subsequently mounted directly on top of the detector. The integrated position sensitive device (13) is mounted with an angle behind a laser in the same position as a normal power monitor detector. The electrically derived lateral position of light hitting the Position Sensitive Device provided with the interference filter will be dependent of the wavelength of the incident light and this derived position is used for the wavelength monitoring.
摘要:
There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located between a collector layer and an emitter layer (top contact layer) stacked on a substrate. The photodetector further comprises multiple avalanche-gain layered structures consisting of a charge layer, a multiplication layer and a contact layer between the light absorption layer and said collector layer.
摘要:
The present invention provides a photoreceiving device that is inexpensive and has good properties as a photoreceiving device for selectively receiving long wavelength light. This is a semiconductor photoreceiving device 10 for selectively receiving long wavelength light from multiplexed light including long wavelength light A and short wavelength light B. This photoreceiving device comprises a multilayered film 22 comprising alternately stacked layers of materials having mutually different indexes of refraction and the thicknesses and number of which are designed so as to transmit said long wavelength light and reflect said short wavelength light; and a first light-absorbing layer 14 composed of a material having a band gap wavelength longer than the wavelength of said long wavelength light.
摘要:
A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.
摘要:
A method for effectuating scribe and break of coated glass microsheets for use with satellite solar cell covers. The method improves the consistency and edge quality of scribed solar cell covers, and also adds scribe and break capabilities not available with the conventional processes, resulting in various, even complex shapes and improved yields. The laser scribe method ensures that most of the laser energy is absorbed in a thin layer that is removed during the pulse, which further ensures that virtually no heat is left behind. This method also promotes a superior and consistent edge quality in satellite solar cell covers. The smoother edges eliminate points of weakness from where cracks may originate, as frequently experienced with the conventional diamond scribe techniques. A laser source such as a KrF excimer laser is utilized for scribing the microsheets. The absorption of the laser correlates with the particular properties of the coating contained on the surface of the microsheets and the particular properties of the microsheet itself. The microsheets are broken to their final size by applying a tensile force perpendicular to the scribe line.
摘要:
An optical filter (18) includes a first layer (22) of material having a bandgap and being doped with an impurity having an energy level in the bandgap such that the first layer absorbs optical energy below a first wavelength and transmits optical energy thereabove. The filter further includes a second layer of optical material (26) disposed on said first layer (22) which transmits optical energy at a second wavelength, above the first wavelength, and reflects optical energy at a third wavelength above the second wavelength. The first and second layers in combination provide a filter (18) with high transmission in-band, low transmission out-of-band and a sharp cutoff therebetween.
摘要:
A process of forming dichroic color filters on substrates, particularly image sensors, includes using a spin-on-glass process to form low and high refractive index layers. A mixture of titania and silica partially hydrolyzed and condensed sol-gel polymer suspension in the high refractive index layer and in the low refractive index layer has a partially hydrolyzed and condensed silica sol-gel polymer suspension are processed and to cause titania to phase change.
摘要:
The invention is a filter device of at least two layers, the first layer of Al.sub.x Ga.sub.(1-x) N and the second layer of Al.sub.y Ga.sub.(1-y) N wherein x and y may have any value from 0 to 1. The invention may be used as a fixed wavelength or tunable wavelength filter or in ultraviolet detectors and laser devices, among other systems. Applications for the invention include detection of UV radiation in environments having a high level of incident infrared and visible radiation, as well as applications requiring detection of UV emission when no other radiation is present.
摘要翻译:本发明是至少两层的滤光器器件,Al x Ga(1-x)N的第一层和AllyGa(1-y)N的第二层,其中x和y可以具有0至1的任何值。本发明 可以用作固定波长或可调波长滤波器,或者用作紫外检测器和激光装置等系统。 本发明的应用包括在具有高入射红外线和可见光辐射的环境中的UV辐射的检测,以及当不存在其它辐射时需要检测UV发射的应用。
摘要:
A light-detecting device includes a base, a first absorption layer, a second absorption layer and a first semiconductor layer. The first absorption layer is located on the base and has a first band gap. The second absorption layer is located between the first absorption layer and the base and has a second band gap and a first dopant. The first semiconductor layer is located between the first absorption layer and the second absorption layer and has a third band gap. The second band gap is equal to or greater than the first band gap, and a third band gap greater than the first band gap and the second band gap. The first absorption layer does not include the first dopant.
摘要:
A light-receiving device having an electromagnetic interference removal function is provided. The light-receiving device includes a waveguide-shaped structure that extends in a traveling direction of photons and high-frequency electromagnetic waves incident on a light-receiving area and that surrounds the light-receiving area, and an insulating layer configured to fix the waveguide-shaped structure.