Integrated wavelength monitor
    51.
    发明授权
    Integrated wavelength monitor 有权
    集成波长监视器

    公开(公告)号:US06639679B2

    公开(公告)日:2003-10-28

    申请号:US09756127

    申请日:2001-01-09

    申请人: Krister Fröjdh

    发明人: Krister Fröjdh

    IPC分类号: G01B902

    摘要: An integrated wavelength monitor and a method for obtaining such a device are disclosed. The device suitable for integration into a laser semiconductor laser module for fiber optic communication can be made in the following way: An interference filter is created directly onto a position sensitive photo detector by depositing a number of layers of different optical transparent materials forming an optical filter. The interference filter may also be created separately and subsequently mounted directly on top of the detector. The integrated position sensitive device (13) is mounted with an angle behind a laser in the same position as a normal power monitor detector. The electrically derived lateral position of light hitting the Position Sensitive Device provided with the interference filter will be dependent of the wavelength of the incident light and this derived position is used for the wavelength monitoring.

    摘要翻译: 公开了集成波长监视器和用于获得这种装置的方法。 适合于集成到用于光纤通信的激光半导体激光器模块中的装置可以以下列方式进行:通过沉积形成滤光器的不同光学透明材料的多个层,直接在位置敏感光电检测器上产生干涉滤光片 。 干涉滤波器也可以单独产生并随后直接安装在检测器的顶部。 集成位置敏感装置(13)以与正常功率监视器检测器相同的位置安装在激光后方的角度。 设置有干涉滤光器的位置敏感元件的光导电横向位置将取决于入射光的波长,并且该导出的位置用于波长监测。

    Avalanche photodetector
    52.
    发明申请
    Avalanche photodetector 失效
    雪崩光电探测器

    公开(公告)号:US20020074555A1

    公开(公告)日:2002-06-20

    申请号:US09927312

    申请日:2001-08-13

    IPC分类号: H01L027/15

    摘要: There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located between a collector layer and an emitter layer (top contact layer) stacked on a substrate. The photodetector further comprises multiple avalanche-gain layered structures consisting of a charge layer, a multiplication layer and a contact layer between the light absorption layer and said collector layer.

    摘要翻译: 公开了具有两个或多个雪崩增益分层结构和多端子的光电检测器。 雪崩光电检测器包括位于集电体层和层叠在基板上的发射极层(顶部接触层)之间的发射光吸收层结构。 光电检测器还包括多个雪崩增益分层结构,其由电荷层,倍增层和光吸收层与所述集电极层之间的接触层组成。

    Semiconductor photoreceiving device

    公开(公告)号:US06399968B2

    公开(公告)日:2002-06-04

    申请号:US09732728

    申请日:2000-12-11

    IPC分类号: H01L31072

    摘要: The present invention provides a photoreceiving device that is inexpensive and has good properties as a photoreceiving device for selectively receiving long wavelength light. This is a semiconductor photoreceiving device 10 for selectively receiving long wavelength light from multiplexed light including long wavelength light A and short wavelength light B. This photoreceiving device comprises a multilayered film 22 comprising alternately stacked layers of materials having mutually different indexes of refraction and the thicknesses and number of which are designed so as to transmit said long wavelength light and reflect said short wavelength light; and a first light-absorbing layer 14 composed of a material having a band gap wavelength longer than the wavelength of said long wavelength light.

    Laser scribe and break process
    55.
    发明授权
    Laser scribe and break process 失效
    激光划片和打破过程

    公开(公告)号:US5961852A

    公开(公告)日:1999-10-05

    申请号:US925979

    申请日:1997-09-09

    摘要: A method for effectuating scribe and break of coated glass microsheets for use with satellite solar cell covers. The method improves the consistency and edge quality of scribed solar cell covers, and also adds scribe and break capabilities not available with the conventional processes, resulting in various, even complex shapes and improved yields. The laser scribe method ensures that most of the laser energy is absorbed in a thin layer that is removed during the pulse, which further ensures that virtually no heat is left behind. This method also promotes a superior and consistent edge quality in satellite solar cell covers. The smoother edges eliminate points of weakness from where cracks may originate, as frequently experienced with the conventional diamond scribe techniques. A laser source such as a KrF excimer laser is utilized for scribing the microsheets. The absorption of the laser correlates with the particular properties of the coating contained on the surface of the microsheets and the particular properties of the microsheet itself. The microsheets are broken to their final size by applying a tensile force perpendicular to the scribe line.

    摘要翻译: 一种用于卫星太阳能电池盖的涂层玻璃微型薄片划线和断裂的方法。 该方法提高了划线太阳能电池盖的一致性和边缘质量,并且还增加了常规工艺不可用的划线和断裂能力,从而形成各种甚至复杂的形状和提高的产量。 激光划片方法确保大部分激光能量被吸收在脉冲期间被去除的薄层中,这进一步确保实际上不会留下热量。 这种方法还促进了卫星太阳能电池盖的优越和一致的边缘质量。 平滑的边缘消除了可能产生裂缝的弱点,这与传统的金刚石雕刻技术经常遇到的一样。 使用诸如KrF准分子激光器的激光源来划刻微片。 激光的吸收与微片表面上包含的涂层的特定性质和微片本身的特定性质相关。 通过施加垂直于划线的拉伸力将微型薄片破碎成最终尺寸。

    Extrinsic semiconductor optical filter
    56.
    发明授权
    Extrinsic semiconductor optical filter 失效
    外部半导体光滤波器

    公开(公告)号:US5463494A

    公开(公告)日:1995-10-31

    申请号:US174573

    申请日:1993-12-23

    申请人: Lowell M. Hobrock

    发明人: Lowell M. Hobrock

    摘要: An optical filter (18) includes a first layer (22) of material having a bandgap and being doped with an impurity having an energy level in the bandgap such that the first layer absorbs optical energy below a first wavelength and transmits optical energy thereabove. The filter further includes a second layer of optical material (26) disposed on said first layer (22) which transmits optical energy at a second wavelength, above the first wavelength, and reflects optical energy at a third wavelength above the second wavelength. The first and second layers in combination provide a filter (18) with high transmission in-band, low transmission out-of-band and a sharp cutoff therebetween.

    摘要翻译: 光学滤波器(18)包括具有带隙的材料的第一层(22),并掺杂有在带隙中具有能级的杂质,使得第一层吸收低于第一波长的光能并在其上方透射光能。 滤光器还包括设置在所述第一层(22)上的第二层光学材料(26),其透射高于第一波长的第二波长的光能,并且反射高于第二波长的第三波长的光能。 组合的第一和第二层提供具有高传输带内,低透射带外的滤波器(18)和它们之间的尖锐截止。

    Forming sol-gel dichroic color filters
    57.
    发明授权
    Forming sol-gel dichroic color filters 失效
    形成溶胶 - 凝胶二向色彩过滤器

    公开(公告)号:US5294288A

    公开(公告)日:1994-03-15

    申请号:US794687

    申请日:1991-11-18

    摘要: A process of forming dichroic color filters on substrates, particularly image sensors, includes using a spin-on-glass process to form low and high refractive index layers. A mixture of titania and silica partially hydrolyzed and condensed sol-gel polymer suspension in the high refractive index layer and in the low refractive index layer has a partially hydrolyzed and condensed silica sol-gel polymer suspension are processed and to cause titania to phase change.

    摘要翻译: 在基板上,特别是图像传感器上形成二向色滤色器的过程包括使用旋涂工艺形成低折射率层和高折射率层。 在高折射率层和低折射率层中的二氧化钛和二氧化硅部分水解和缩合的溶胶 - 凝胶聚合物悬浮液的混合物被处理并使二氧化钛发生相变。

    Narrow band algan filter
    58.
    发明授权
    Narrow band algan filter 失效
    窄带混合过滤器

    公开(公告)号:US5182670A

    公开(公告)日:1993-01-26

    申请号:US755510

    申请日:1991-08-30

    摘要: The invention is a filter device of at least two layers, the first layer of Al.sub.x Ga.sub.(1-x) N and the second layer of Al.sub.y Ga.sub.(1-y) N wherein x and y may have any value from 0 to 1. The invention may be used as a fixed wavelength or tunable wavelength filter or in ultraviolet detectors and laser devices, among other systems. Applications for the invention include detection of UV radiation in environments having a high level of incident infrared and visible radiation, as well as applications requiring detection of UV emission when no other radiation is present.

    摘要翻译: 本发明是至少两层的滤光器器件,Al x Ga(1-x)N的第一层和AllyGa(1-y)N的第二层,其中x和y可以具有0至1的任何值。本发明 可以用作固定波长或可调波长滤波器,或者用作紫外检测器和激光装置等系统。 本发明的应用包括在具有高入射红外线和可见光辐射的环境中的UV辐射的检测,以及当不存在其它辐射时需要检测UV发射的应用。

    PHOTO-DETECTING DEVICE
    59.
    发明公开

    公开(公告)号:US20240290902A1

    公开(公告)日:2024-08-29

    申请号:US18584699

    申请日:2024-02-22

    摘要: A light-detecting device includes a base, a first absorption layer, a second absorption layer and a first semiconductor layer. The first absorption layer is located on the base and has a first band gap. The second absorption layer is located between the first absorption layer and the base and has a second band gap and a first dopant. The first semiconductor layer is located between the first absorption layer and the second absorption layer and has a third band gap. The second band gap is equal to or greater than the first band gap, and a third band gap greater than the first band gap and the second band gap. The first absorption layer does not include the first dopant.