公开(公告)号：US20040149988A1

公开(公告)日：2004-08-05

申请号：US10704642

申请日：2003-11-12

申请人： Canon Kabushiki Kaisha

发明人： Atsushi Shiozaki ,  Shuichiro Sugiyama

IPC分类号： H01L029/04

CPC分类号： H01L31/03685 ,  B32B17/10788 ,  H01L31/076 ,  Y02B10/12 ,  Y02E10/545 ,  Y02E10/548

摘要： A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.

摘要翻译： 提供了具有高转换效率，低成本可生产性，重量轻和具有透明保护构件的最终产品形式的良好整体特性的光电元件。 光电元件包括​​第一pin结，其包括i型非晶半导体，包括i型微晶半导体的第二pin结，以及包括从光入射侧按照上述顺序提供的i型微晶半导体的第三pin结 其特征在于，在所述第一pin结的光入射侧设置有至少透明保护部件和透明电极层，并且在所述多个引脚接合处产生的所述光电流中，在所述第三pin结处产生的光电流为最小 。

公开(公告)号：US06743974B2

公开(公告)日：2004-06-01

申请号：US10140640

申请日：2002-05-08

申请人： Kazumi Wada ,  Lionel C. Kimerling

发明人： Kazumi Wada ,  Lionel C. Kimerling

IPC分类号： H01L3106

CPC分类号： H01L31/0687 ,  H01L31/03685 ,  H01L31/078 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548

摘要： A multijunction solar cell comprising a silicon solar cell with a germanium solar cell formed on the backside of the silicon solar cell. The silicon solar cell and germanium solar cell are directly coupled via a p-p junction to inactivate interface dislocations. Preferably, the silicon solar cell comprises a p++ type silicon layer; an intrinsic silicon layer formed on the p++ type silicon layer; an n++ type silicon layer formed on the intrinsic type silicon layer; and a p-type silicon layer formed on the n++ type silicon layer. The germanium solar cell preferably comprises an n-type germanium layer; and a p-type germanium layer form on the n-type germanium layer. The p-type germanium layer is coupled to the p++ type silicon layer.

摘要翻译： 一种多结太阳能电池，包括形成在硅太阳能电池的背面上的锗太阳能电池的硅太阳能电池。 硅太阳能电池和锗太阳能电池通过p-p接头直接耦合以钝化界面位错。 优选地，硅太阳能电池包括p ++型硅层; 形成在p ++型硅层上的本征硅层; 形成在本征型硅层上的n ++型硅层; 以及形成在n ++型硅层上的p型硅层。 锗太阳能电池优选包括n型锗层; 和在n型锗层上形成p型锗层。 p型锗层与p ++型硅层耦合。

公开(公告)号：US20020134425A1

公开(公告)日：2002-09-26

申请号：US10041681

申请日：2002-01-10

发明人： Hiroshi Yamamoto ,  Kenji Wada

IPC分类号： H01L031/00

CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0547 ,  H01L31/0747 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548

摘要： A thin-film solar cell comprises a set of a transparent conductive layer and a photoelectric conversion layer laminated in this order on a substrate, wherein the photoelectric conversion layer is made of a p-i-n junction, the i-layer is made of a crystalline layer and the transparent conductive layer is provided with a plurality of holes at its surface of the side of the photoelectric conversion layer, each of said holes having irregularities formed on its surface.

摘要翻译： 薄膜太阳能电池包括在基板上依次层叠的一组透明导电层和光电转换层，其中光电转换层由pin结形成，i层由结晶层制成， 透明导电层在其光电转换层的一侧的表面设置有多个孔，每个所述孔在其表面上形成有凹凸。

公开(公告)号：US06337224B1

公开(公告)日：2002-01-08

申请号：US09554164

申请日：2000-05-10

申请人： Yoshifumi Okamoto ,  Masashi Yoshimi ,  Kenji Yamamoto

发明人： Yoshifumi Okamoto ,  Masashi Yoshimi ,  Kenji Yamamoto

IPC分类号： H01L2100

CPC分类号： H01L31/076 ,  H01L31/03685 ,  H01L31/077 ,  H01L31/182 ,  H01L31/206 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/935

摘要： In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlying film is at most 550° C.; a gas introduced into a plasma reaction chamber has a silane-based gas and a hydrogen gas where the flow rate of the hydrogen gas relative to the silane-based gas is at least 50 times; the pressure in the plasma reaction chamber is set to 3 Torr; and the deposition speed is 17 nm/min in the thickness-wise direction.

摘要翻译： 在制造硅基薄膜光电转换器的方法中，包括在光电转换器中的晶体光电转换层在以下条件下通过等离子体CVD沉积：底层膜的温度至多为550℃。 引入等离子体反应室的气体具有硅烷系气体和氢气，氢气相对于硅烷系气体的流量为50倍以上， 等离子体反应室中的压力设定为3乇; 并且沉积速度在厚度方向上为17nm / min。

公开(公告)号：US5288338A

公开(公告)日：1994-02-22

申请号：US928747

申请日：1992-08-13

申请人： Hiroaki Morikawa

发明人： Hiroaki Morikawa

IPC分类号： H01L31/0747 ,  H01L31/075 ,  H01L31/18 ,  H01L31/06

CPC分类号： H01L31/075 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell includes a first conductivity type silicon substrate, a second conductivity type layer of microcrystalline or amorphous silicon deposited on the substrate in a plasma process and consuming an oxide film no more than 2 nanometers thick formed on the substrate before depositing the second conductivity type layer, a transparent electrode layer disposed on the second conductivity type layer, a grid electrode disposed on the transparent electrode layer, and an electrode disposed on the substrate. A method for producing a solar cell includes forming a silicon oxide film on a first conductivity type silicon substrate to a thickness not exceeding 2 nanometers by immersing the substrate in heated nitric acid, depositing a second conductivity type layer of microcrystalline or amorphous silicon on the silicon oxide film in a plasma, the silicon oxide film being consumed during deposition of the second conductivity type layer, and forming respective electrodes on the substrate and the second conductivity type layer.

摘要翻译： 太阳能电池包括第一导电型硅衬底，在等离子体工艺中沉积在衬底上的第二导电类型的微晶或非晶硅层，并且在沉积第二导电类型之前消耗形成在衬底上的不超过2纳米厚的氧化膜 设置在第二导电类型层上的透明电极层，设置在透明电极层上的栅电极和设置在基板上的电极。 一种太阳能电池的制造方法，其特征在于，在所述第一导电型硅衬底上形成氧化硅膜，使其厚度不超过2纳米，将所述衬底浸渍在加热的硝酸中，在所述硅上沉积第二导电型微晶或非晶硅层 氧化膜在第二导电型层的沉积期间被消耗，并且在基板和第二导电类型层上形成各自的电极。

公开(公告)号：US5066340A

公开(公告)日：1991-11-19

申请号：US563567

申请日：1990-08-06

申请人： Masayuki Iwamoto ,  Kouji Minami ,  Toshihiko Yamaoki

发明人： Masayuki Iwamoto ,  Kouji Minami ,  Toshihiko Yamaoki

IPC分类号： H01L31/04 ,  H01L31/036 ,  H01L31/0368 ,  H01L31/072 ,  H01L31/20

CPC分类号： H01L31/0745 ,  H01L31/036 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device has a crystalline layer of a first conductivity type formed of crystalline silicon semiconductor material, an amorphous layer of an opposite conductivity type formed of amorphous silicon semiconductor material, and a microcrystalline layer formed of substantially intrinsic microcrystalline silicon semiconductor material provided between the crystalline layer and the amorphous layer.

摘要翻译： 光电器件具有由晶体硅半导体材料形成的第一导电类型的晶体层，由非晶硅半导体材料形成的相反导电类型的非晶层，以及由基本上本征的微晶硅半导体材料形成的微晶层， 层和非晶层。

公开(公告)号：US20240297262A1

公开(公告)日：2024-09-05

申请号：US18574689

申请日：2022-06-24

申请人： ANHUI HUASUN ENERGY CO., LTD.

发明人： Ke XIN ,  Su ZHOU ,  Daoren GONG ,  Wenjing WANG ,  Xiaohua XU ,  Zhigang MEI ,  Long YANG

IPC分类号： H01L31/0224 ,  H01L31/0203 ,  H01L31/0368 ,  H01L31/074 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03685 ,  H01L31/074 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/0203

摘要： A heterojunction solar cell and a preparation method therefor. The heterojunction solar cell comprises: a semiconductor substrate layer; and a back composite transparent conductive film located on one side of the semiconductor substrate layer. The back surface composite transparent conductive film comprises: a first back surface transparent conductive film; and a second back transparent conductive film located on the side surface of the first back transparent conductive film facing away from the semiconductor substrate layer. Both the first back transparent conductive film and the second back transparent conductive film are doped with group III heavy atoms, and the concentration of the group III heavy atoms in the second back transparent conductive film is less than that of the group III heavy atoms in the first back transparent conductive film.

公开(公告)号：US20240170588A1

公开(公告)日：2024-05-23

申请号：US18428217

申请日：2024-01-31

申请人： Jinko Green Energy (Shanghai) Management Co., LTD. ,  ZHEJIANG JINKO SOLAR CO., LTD.

发明人： Menglei XU ,  Jie YANG ,  Xinyu ZHANG ,  Hao JIN

IPC分类号： H01L31/0224 ,  H01L31/02 ,  H01L31/0368

CPC分类号： H01L31/022458 ,  H01L31/02021 ,  H01L31/03685

摘要： Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

公开(公告)号：US20240120424A1

公开(公告)日：2024-04-11

申请号：US18120578

申请日：2023-03-13

申请人： Golden Solar (Quanzhou) New Energy Technology Co., Ltd.

发明人： Kairui LIN

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02168 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/077 ,  H01L31/1824

摘要： The present disclosure pertains to the field of back contact heterojunction cell technologies, and particularly relates to a mask-layer-free hybrid passivation back contact cell and a fabrication method thereof; the method includes: S101: providing a silicon wafer substrate; S102: sequentially forming a first semiconductor layer and a mask layer on a back surface of the silicon wafer substrate, wherein the first semiconductor layer includes a tunneling oxide layer and a first doped polycrystalline layer; S103: performing first etching on the first semiconductor layer on the obtained back surface to form first opening regions W1; S104: forming a textured surface in the first opening region W1 on the back surface by texturing and cleaning; S105: removing the mask layer; S106: forming a second semiconductor layer on the obtained back surface; and S107: performing second etching on a polished region of the obtained back surface.

公开(公告)号：US11728446B2

公开(公告)日：2023-08-15

申请号：US17390857

申请日：2021-07-30

申请人： Jinko Green Energy (Shanghai) Management Co., LTD. ,  ZHEJIANG JINKO SOLAR CO., LTD.

发明人： Menglei Xu ,  Jie Yang ,  Xinyu Zhang ,  Hao Jin

IPC分类号： H01L31/0224 ,  H01L31/02 ,  H01L31/0368

CPC分类号： H01L31/022458 ,  H01L31/02021 ,  H01L31/03685

摘要： Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter disposed on part of the tunneling layer in the first region; and a second emitter disposed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode disposed in the first region and configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode disposed in the second region and configured to electrically connect with the second emitter.