公开(公告)号：US07332781B2

公开(公告)日：2008-02-19

申请号：US10490491

申请日：2002-09-19

Applicant: Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

Inventor： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

IPC: H01L29/82 ,  H01L43/00

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226

Abstract: The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.

Abstract translation: 本发明涉及一种磁存储器，其中每个存储点由磁性隧道结（60）组成，包括：被称为俘获层（61）的磁性层，其中磁化是刚性的; 称为自由层（63）的磁性层，其磁化可以是反向的; 和绝缘层（62），介于所述自由层（73）和所述被俘获层（71）之间并分别与所述两层接触。 自由层（63）由基于稀土或过渡金属的无定形或纳米碳化合金制成，所述合金的磁顺序为铁磁型，所述自由层具有基本上平面的磁化强度。

公开(公告)号：US20070290282A1

公开(公告)日：2007-12-20

申请号：US11553421

申请日：2006-10-26

Applicant: Nickolai Belov ,  Peter David Ascanio ,  Donald Edward Adams

Inventor： Nickolai Belov ,  Peter David Ascanio ,  Donald Edward Adams

IPC: H01L43/00

CPC classification number: H01F7/066 ,  H01F7/122 ,  H01F2007/068 ,  H02K41/0354 ,  H02K2201/18

Abstract: An embodiment of a micro-mover in accordance with the present invention can include a movable plate hermetically sealed between a top cap wafer and a bottom cap wafer. A magnet disposed on one or both of the cap wafers. The movable plate can include current paths disposed within a magnetic field generated by the magnet, and coaxially with a surface of the movable plate. When current is applied to the current paths, the movable plate is urged some distance within a gap between the movable plate and a stationary portion disposed co-planar with the movable plate.

Abstract translation: 根据本发明的微型移动器的实施例可以包括气密地密封在顶盖晶片和底盖晶片之间的可移动板。 设置在一个或两个盖晶片上的磁体。 可移动板可以包括设置在由磁体产生的磁场内并与可动板的表面同轴的电流路径。 当电流施加到电流路径时，可移动板在可动板和与可动板共面设置的固定部分之间的间隙内被推动一定距离。

公开(公告)号：US20070176251A1

公开(公告)日：2007-08-02

申请号：US11614268

申请日：2006-12-21

Applicant: Se-Chung Oh ,  Jang-Eun Lee ,  Hyun-Jo Kim ,  Kyung-Tae Nam ,  Jun-Ho Jeong

Inventor： Se-Chung Oh ,  Jang-Eun Lee ,  Hyun-Jo Kim ,  Kyung-Tae Nam ,  Jun-Ho Jeong

IPC: H01L43/00

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11C11/16 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49044

Abstract: A magnetic memory device includes a pinning layer, a pinned layer, an insulation layer, which are sequentially stacked on a semiconductor substrate. The magnetic memory device further includes a free layer disposed on the insulation layer, a capping layer disposed on the free layer and an MR (magnetoresistance) enhancing layer interposed between the free layer and the capping layer. The MR enhancing layer is formed of at least one anti-ferromagnetic material.

Abstract translation: 磁存储器件包括顺序堆叠在半导体衬底上的钉扎层，钉扎层，绝缘层。 磁存储器件还包括设置在绝缘层上的自由层，设置在自由层上的覆盖层和插入在自由层和覆盖层之间的MR（磁阻）增强层。 MR增强层由至少一种反铁磁材料形成。

公开(公告)号：US07190611B2

公开(公告)日：2007-03-13

申请号：US10338148

申请日：2003-01-07

Applicant: Paul P. Nguyen ,  Yiming Huai

Inventor： Paul P. Nguyen ,  Yiming Huai

IPC: G11C11/00 ,  H01L43/00

CPC classification number: G11C11/15 ,  G11C11/5607

Abstract: A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer has at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an antiferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.

Abstract translation: 用于高密度存储器阵列的磁性元件包括可重置层和存储层。 可复位层具有通过至少一个外部产生的磁场在选定方向上设定的磁化。 当写入电流通过磁性元件时，存储层具有至少一个易磁化轴和基于自旋转移效应改变方向的磁化。 磁性元件的替代实施例包括由隧道势垒层，钉扎磁性层和反铁磁层形成的额外的多层结构，其在预定方向上钉住钉扎层的磁化。 磁性元件的另一替代实施例包括由隧道势垒层和具有与基本实施例的可重置层的磁矩不同的磁矩的第二可复位层形成的附加多层结构。

公开(公告)号：US20070045759A1

公开(公告)日：2007-03-01

申请号：US11217146

申请日：2005-08-31

Applicant: Young Chung ,  Robert Baird ,  Mark Durlam ,  Gregory Grynkewich ,  Eric Salter

Inventor： Young Chung ,  Robert Baird ,  Mark Durlam ,  Gregory Grynkewich ,  Eric Salter

IPC: H01L43/00

CPC classification number: H01L27/228

Abstract: An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a passive device (320) is formed in conjunction with the MRAM cell (316). The passive device (320) can be one or more resistors and one or more capacitor. The concurrent fabrication of the MRAM architecture (314) and the passive device (320) facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate (404, 504), resulting in three-dimensional integration.

公开(公告)号：US20070012952A1

公开(公告)日：2007-01-18

申请号：US11182255

申请日：2005-07-15

Applicant: Yimin Guo ,  Po-Kang Wang

Inventor： Yimin Guo ,  Po-Kang Wang

IPC: H01L43/00 ,  H01L21/00

CPC classification number: H01L27/222 ,  G11C11/1675 ,  G11C11/1695

Abstract: A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

Abstract translation: 在主屏蔽层下方的第二屏蔽层被添加到分段的MRAM阵列。 图案化附加屏蔽，以便每位片提供一个屏蔽。 在这些分段屏蔽的端部处放置纵向偏置突片确保每个分段屏蔽是单个磁畴，使其作为防止非常小的杂散场的屏蔽非常有效。

公开(公告)号：US20070007608A1

公开(公告)日：2007-01-11

申请号：US11179029

申请日：2005-07-11

Applicant: Guoqing Chen

Inventor： Guoqing Chen

IPC: H01L43/00

CPC classification number: H01L27/222

Abstract: An array of conductive lines for MRAM circuits wherein at least one set of mutually parallel conductive traces is tilted with respect to being perpendicular with a corresponding set of mutually parallel conductive traces wherein individual conductive traces within the sets intersect adjacent individual MRAM cells and wherein the tilting of the at least one set of conductive traces acts to induce both a vertical and horizontal component of a magnetic field such that the net vector addition of magnetic fields induced by the sets of conductive traces is greater than the untilted or perpendicular configuration so as to induce a greater net magnetic field to effect more reliable switching of the underlying MRAM cells. The tilted array also enables reducing the current supplied by the conductive traces while maintaining a comparable net magnetic field to the untilted configuration.

公开(公告)号：US20070001251A1

公开(公告)日：2007-01-04

申请号：US11475835

申请日：2006-06-27

Applicant: Akira Saito

Inventor： Akira Saito

IPC: G11C11/00 ,  H01L43/00 ,  H01L29/82

CPC classification number: H01L43/08 ,  G11C11/16

Abstract: A spin injection magnetization reversal element includes a ferromagnetic fixed layer, an isolation layer and a ferromagnetic free layer. The area of contact between the ferromagnetic fixed layer and the isolation layer is larger than an area of contact between the ferromagnetic free layer and the isolation layer. The ferromagnetic fixed layer may be divided into ferromagnetic first fixed layer and ferromagnetic second fixed layer, and the isolation layer may be divided into first isolation layer and second isolation layer. The ferromagnetic first fixed layer may be arranged on one of opposed principal surfaces of the ferromagnetic free layer with the first isolation layer in between, and the ferromagnetic second fixed layer may be arranged on the other of the opposed principal surfaces of the ferromagnetic free layer with the second isolation layer in between. The element holds recorded magnetization and can reverse magnetization with a small current density.

Abstract translation: 自旋注入磁化反转元件包括铁磁性固定层，隔离层和铁磁性自由层。 铁磁固定层和隔离层之间的接触面积大于铁磁性自由层与隔离层之间的接触面积。 铁磁固定层可分为铁磁第一固定层和铁磁第二固定层，隔离层可分为第一隔离层和第二隔离层。 铁磁第一固定层可以布置在铁磁自由层的相对的主表面之间，其间具有第一隔离层，铁磁第二固定层可以布置在铁磁自由层的另一个相对的主表面上， 其间的第二隔离层。 该元件保持记录的磁化，并可以以小的电流密度反转磁化。

公开(公告)号：US07151304B2

公开(公告)日：2006-12-19

申请号：US11037280

申请日：2005-01-18

Applicant: Denny D. Tang

Inventor： Denny D. Tang

IPC: H01L29/82 ,  H01L43/00

CPC classification number: G11C11/15

Abstract: In magnetic memories it is important to be able to switch the states of the memory elements using minimal power i.e. external fields of minimal intensity. This has been achieved by giving each memory element an easy axis whose direction parallels its minimum surface dimension. Then, when the magnetic state of the element is switched by rotating its direction of magnetization, said rotation is assisted, rather than being opposed, by the crystalline anisotropy. Consequently, relative to the prior art, a lower external field is required to switch the state of the element.

Abstract translation: 在磁存储器中，重要的是能够使用最小功率即最小强度的外部场来切换存储元件的状态。 这已经通过给每个存储元件一个方向平行于其最小表面尺寸的容易轴来实现。 然后，当通过旋转其磁化方向来切换元件的磁状态时，通过晶体各向异性来辅助而不是相反的旋转。 因此，相对于现有技术，需要较低的外部场来切换元件的状态。

公开(公告)号：US20060220781A1

公开(公告)日：2006-10-05

申请号：US11389065

申请日：2006-03-27

Applicant: Tetsuya Kuwashima ,  Naoki Ohta

Inventor： Tetsuya Kuwashima ,  Naoki Ohta

IPC: H01L43/00

CPC classification number: G01L1/005 ,  G01P15/0894 ,  G01P15/18 ,  H01L45/00

Abstract: This invention provides a tunneling effect element that has versatility and that does not receive the effects of drift due to differences in the thermal-expansion coefficient of the lower and upper electrodes, and is not easily affected by external magnetic fields. The disclosed tunneling effect element 1 comprises: an insulating layer 11 that forms a tunneling barrier, a lower electrode 12 that is conductive and is formed on the bottom surface of the insulating layer 11, an upper electrode 13 that is conductive and is formed on the top surface of the insulating layer 11, and a transmission member 5 that is formed around the insulating layer 11, lower electrode 12 and upper electrode 13, and transmits the behavior of the object to be detected to the insulating layer 11.

Abstract translation: 本发明提供了具有通用性的隧道效应元件，并且由于上下电极的热膨胀系数的差异而不会受到漂移的影响，并且不容易受到外部磁场的影响。 所公开的隧道效应元件1包括：形成隧道势垒的绝缘层11，导电并形成在绝缘层11的底表面上的下电极12，导电并形成在绝缘层11上的上电极13 绝缘层11的上表面和形成在绝缘层11，下电极12和上电极13周围的透射构件5，并将被检测物体的行为传递到绝缘层11。